• Textile Coloration and Finishing
• /
• v.7 no.1
• /
• pp.1-9
• /
• 1995

In order to improve dyeability of poly(ethylene terephthalate)(PET) micro filament fabrics, the effect of the prior oxygen low temperature plasma on the subsequent dyeing(deep dyeing, printing) was examined in various conditions. The apparent concentration of dyed PET micro filament fabrics was increased by $O_{2}$plasma treatment. Higher discharge power levels and higher reactor pressure values created more significant effect. The wettability was significantly increased by $O_{2}$ plasma treatment. Therefore, it is predicted that introducing hydrophilic group on the surface of material can improve the apparent concentration of PET micro filament fabrics.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.51 no.3
• /
• pp.111-114
• /
• 2002

Using the plasma that we developed to generate a low-temperature plasma at atmospheric pressure, we have investigated the etching possibility of an air-exposed zinc oxide(ZnO) thin films. Hydrogen and methane radicals generated from the plasma were observed and their intensity was found to be dependent on the isomer of butyl acetate by an analysis with optical emission spectrosxopy. The etching ability of this plasma was evaluated by an emission intensity, etching time, rf power.

• Journal of Microbiology
• /
• v.44 no.4
• /
• pp.466-471
• /
• 2006

In this study, we attempted to characterize the biomolecular effects of an atmospheric-pressure cold plasma (APCP) system which utilizes helium/oxygen $(He/O_2)$. APCP using $He/O_2$ generates a low level of UV while generating reactive oxygen radicals which probably serve as the primary factor in sterilization; these reactive oxygen radicals have the advantage of being capable to access the interiors of the structures of microbial cells. The damaging effects of plasma exposure on polypeptides, DNA, and enzyme proteins in the cell were assessed using biochemical methods.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.91-91
• /
• 2005

Electron energy distribution functions and plasma parameters such as electron temperature ($T_e$) and electron density ($n_e$) in low-pressure Cl-based plasmas have been measured. As the $Cl_2/A4$ gas mixing ratio, the $BCl_3$ gas addition and the process pressure increases, the electron energy probability and the electron temperature decreases. In case of source power increases, electron energy probability increases, whereas the electron temperature was not related.

• Analytical Science and Technology
• /
• v.6 no.4
• /
• pp.369-374
• /
• 1993

Plasma oscillation has been observed during the development of the glow discharge as detector for gas chromatography. The variation of oscillation frequency shows the better stability and detection limits than the changes in the dischange curent. To investigate the range of useful operating conditions and to gain insight into the mechanism, the effect of experimental parameters on plasma oscillation have been studied. This study includes the variation of discharge current, pressure and discharge gap. Frequency ranges of 10KHz to 10MHz have been observed with the various shapes of oscillation. Two kinds of mode for oscillation are observed with the variation of electrode gap at low pressure and low voltage.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.213-213
• /
• 2010

Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is one of the best semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. For the realization of high density MRAM, the etching of MTJ stack with good properties is one of a key process. Recently, there has been great interest in the MTJ stack using MgO as barrier layer for its huge room temperature MR ratio. The use of MgO barrier layer will undoubtedly accelerate the development of MTJ stack for MRAM. In this study, high-density plasma reactive ion etching of MgO films was investigated in an inductively coupled plasma of $Cl_2$/Ar gas mixes. The etch rate, etch selectivity and etch profile of this magnetic film were examined on vary gas concentration. As the $Cl_2$ gas concentration increased, the etch rate of MgO monotonously decreased and etch slop was slanted. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of MgO thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of MgO displayed better etch profiles. Finally, the clean and vertical etch sidewall of MgO films was achieved using $Cl_2$/Ar plasma at the optimized etch conditions.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.250.2-250.2
• /
• 2014

Currently, teeth whitening method which is applicable to dental surgery is that physician expertises give medical treatment to teeth directly dealed with a high concentration of hydrogen peroxide and carbamide peroxide. If hydrogen peroxide concentration is too high for treatment of maximized teeth whitening effect [1], it is harmful to the human body [2]. To the maximum effective and no harmful teeth whitening effect in a short period of time at home, we have observed the whitening effect using carbamide peroxide (15%) and a low-temperature atmospheric pressure plasma jet which is regulated by the Food and Drug Administration. The gas supplied conditions of the non-thermal atmospheric pressure plasma jet was with the humidified (0.6%) gas in nitrogen or air at gas flow rate of 1000 sccm. Also, the measurement of chemical species from the jet was carried out using the optical emission spectroscopy (OES), the evidence of increased reactive oxygen species compared to non-humidified plasma jet. We have found that the whitening effect of the plasma is very excellent through this experiment, when bovine teeth are treated in carbamide peroxide (15%) and water vapor (0.2 to 1%). The brightness of whitening teeth was increased up to 2 times longer in the CIE chromaticity coordinates. The colorimetric spectrometer (CM-3500d) can measure color degree of whitening effect.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.27 no.6
• /
• pp.95-99
• /
• 2013

Furnace is currently the most important doping process using POCl3 in solar cell. However furnace need an expensive equipment cost and it has to purge a poisonous gas. Moreover, furnace typically difficult appling for selective emitters. In this study, we developed a new atmospheric pressure plasma source, in this procedure, we research the atmospheric pressure plasma doping that dopant is phosphoric acid($H_3PO_4$). Metal tube injected Ar gas was inputted 5 kV of a low frequency(scores of kHz) induced inverter, so plasma discharged at metal tube. We used the P type silicon wafer of solar cell. We regulated phosphoric acid($H_3PO_4$) concentration on 10% and plasma treatment time is 90 s, 150 s, we experiment that plasma current is 70 mA. We check the doping depth that 287 nm at 90 s and 621 nm at 150 s. We analysis and measurement the doping profile by using SIMS(Secondary Ion Mass Spectroscopy). We calculate and grasp the sheet resistance using conventional sheet resistance formula, so there are 240 Ohm/sq at 90 s and 212 Ohm/sq at 150 s. We analysis oxygen and nitrogen profile of concentration compared with furnace to check the doped defect of atmosphere.

• Journal of the Korean Applied Science and Technology
• /
• v.40 no.1
• /
• pp.71-80
• /
• 2023

Silver paste is a valuable electrode material for electronic device applications because it is easy to handle with relatively low heat treatment. This study treated the electrode surface using an atmospheric-pressure plasma jet on the silver-paste electrode. This plasma jet was generated in an argon atmosphere using a high voltage of 5.5 to 6.5 kV with an operating frequency of 11.5 kHz. Plasma-jet may be more beneficial to the printing process by performing it at atmospheric pressure. The electrode surface becomes hydrophilic quickly and contact angle variation is observed on the electrode surface as a function of plasma treatment time, applied voltage, and gas flow rate. Also, there was no deviation in the contact angle after the plasma treatment in the large-area sample, that means a uniform result could be obtained regardless of the substrate size. The outcomes of this study are expected to be very useful in forming a stacked structure in the manufacture of large-area electronic devices and future applications.

• Proceedings of the IEEK Conference
• /
• 1998.06a
• /
• pp.339-342
• /
• 1998

Plasma etching of photoresist needs high etch rate, good uniformity and rae, good uniformity and low damage in low cost. ICP asher is expected to satisfy these requriement for next eneration semiconductor devices. ICPsimulator has been used to design the ashing chamber to redcue the development time and cost, and its results have been verified by QMS, OES and langmuir probe measurments. Plasma characteristics are monitored in terms of RF power and chamber pressure.