• 제목/요약/키워드: Low-power laser

검색결과 370건 처리시간 0.025초

누설 변압기를 이용한 반파 AC 주파수 제어형 $CO_2$ 레이저의 전원장치 개발 (The development on Power supply for Pulsed $CO_2$ laser using half-rectified AC frequency control and leakage transformer)

  • 정현주;김도완;이동훈;이유수;김희제;조정수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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    • pp.82-85
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    • 2000
  • We introduce pulsed $CO_2$ laser power supply excited by half-wave rectified 60Hz AC discharge some advantage of cost and size compared to a typical pulsed power supply. AC frequency is adjusted from 10Hz to 60Hz to control laser output. In this laser, a low voltage open loop control for high voltage AC discharge circuits is employed to avoid the HV sampling or switching. The control is achieved by using a ZCS circuit and a PIC one-chip microprocessor that control the gate signal of SCR precisely. The pulse repetition rate is limited by 60Hz due to a high leakage inductance. The maximum laser output was obtained about 20W at the condition of total pressure, 18Torr and pulse repetition rate,60Hz.

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고리형 Enhancement Cavity 를 이용한 저출력 반도체 레이저의 제2조화파 발생 (Second Harmonic Generation of Low Power Laser Diode Using a Ring Enhancement Cavity)

  • 오차환
    • 한국광학회지
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    • 제4권2호
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    • pp.206-211
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    • 1993
  • $LilO_3$ 결정에서 최대 출력 30mW의 저출력 CW 반도체레이저에 대한 제2조화파 발생 실험을 실시하였다. 두개의 오목 거울과 두개의 평면 거울로 이루어진 고리형 enhancement 공진기를 이용하여 제2조화파 변환 효율을 증가시켰다. 사용된 오목 거울의 곡률 반경은 50mm 이었고, $LilO_3$ 결정은 길이 5mm와 10mm의 두 개를 사용하였다. 펌핑 출력에 따른 제2조화파의 출력을 측정하고 이론값과 비교 하였다. 794nm의 펌프출력이 28mW 일 때 10mm의 $LilO_3$ 결정에서 $6.6{\mu}W$의 397 nm 출력을 얻을 수 있었다.

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광섬유 패브리-페로 파장가변 필터의 공진특성에 기반한 고속 파장가변 모드잠김 레이저의 제작 (Construction of High-Speed Wavelength Swept Mode-Locked Laser Based on Oscillation Characteristics of Fiber Fabry-Perot Tunable Filter)

  • 이응제;김용평
    • 전기학회논문지
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    • 제58권7호
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    • pp.1393-1397
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    • 2009
  • A high-speed wavelength swept laser, which is based on oscillation characteristics of a fiber Fabry-Perot tunable filter, is described. The laser is constructed by using a semiconductor optical amplifier, a fiber Fabry-Perot tunable filter, and 3.348 km fiber ring cavity. The wavelength sweeps are repeatatively generated with the repetition period of 61 kHz which is the first parallel oscillation frequency of the Fabry-Perot tunable filter for the low power consumption. Mode-locking is implemented by 3.348 km fiber ring cavity for matching the fundamental of cavity roundtrip time to the sweep period. The wavelength tuning range of the laser is 87 nm(FWHM) and the average output power is 1.284 mW.

Bronze를 이용한 쾌속조형제조에 대한 연구 (A Study on the Manufacturing Rapid Prototype Using Bronze)

  • 전병철;김재도
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 1995년도 추계학술대회 논문집
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    • pp.204-209
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    • 1995
  • The implementation of rapid prototyping technologies has been developed for automotive engineering by utilizing concurrent engineering principes integrated with slective laser sintering. The Selective Laser Sintering, in which a part is generated in layers form powder using a computer-controlled laser scanning apparatus and power feed system. An over view of the basic principles of SLS Machine operation is given. Binding mechanisms are described for power which becomes thermally activated bye the scanning laser beam; viscous flow and melting of a low-melting-point phase in powder. The production of parts from metal is described, including post processing to improve structural integrity and induce a transformation.

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Design and Simulation of an 808 nm InAlAs/AlGaAs GRIN-SCH Quantum Dot Laser Diode

  • Chan, Trevor;Son, Sung-Hun;Kim, Kyoung-Chan;Kim, Tae-Geun
    • Journal of the Optical Society of Korea
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    • 제15권2호
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    • pp.124-127
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    • 2011
  • Quantum dots were designed within a GRIN-SCH(Graded index - Separate confinement Heterostructure) heterostructure to create a high power InAlAs/AlGaAs laser diode. 808 nm light emission was with a quantum dot composition of In0.665Al0.335As and wetting layer composition of Al0.2Ga0.8As by LASTIP simulation software. Typical characteristics of GRIN structures such as high confinement ratios and Gaussian beam profiles were shown to still apply when quantum dots are used as the active media. With a dot density of 1.0x1011 dots/cm2, two quantum dot layers were found to be good enough for low threshold, high-power laser applications.

레이저 유도에칭을 이용한 티타늄 미세채널 제조 (Fabrication of Titanium Microchannels by using Ar+ Laser-assited Wet Etching)

  • 손승우;이민규;정성호
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2004년도 추계학술대회 논문집
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    • pp.709-713
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    • 2004
  • Characteristics of laser-assisted wet etching of titanium in phosphoric acid were investigated to examine the feasibility of this method for fabrication of high aspect ratio microchannels. Laser power, number of scans, etchant concentration, position of beam waist and scanning speed were taken into consideration as the major process parameters exerting the temperature distribution and the cross sectional profile of etched channels. Experimental results indicated that laser power influences on both etch width and depth while number of scans and scanning speed mainly affect on the etch depth. At a low etchant concentration, the cross sectional profile of an etched channel becomes a U-shape but it gradually turns into a V-shape as the concentration increases. On the other hand, surface of the laser beam focus with respect to the sample surface is found to be a key factor determining the bubble dynamics and thus the process stability. It is demonstrated that metallic microchannels with different cross sectional profiles can be fabricated by properly controlling the process parameters. Microchannels of aspect ratio up to 8 with the width and depth ranges of 8∼32 m and 50∼300 m, respectively, were fabricated.

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Effective Annealing and Crystallization of Si Film for Advanced TFT System

  • Noguchi, Takashi
    • Journal of Information Display
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    • 제11권1호
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    • pp.12-16
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    • 2010
  • The effect of the crystallization and activated annealing of Si films using an excimer laser and the new CW blue laser are described and compared with furnace annealing for application in advanced TFTs and for future applications. Pulsed excimer laser annealing (ELA) is currently being used extensively as a low-temperature poly-silicon (LTPS) process on glass substrates as its efficiency is high in the ultra-violet (UV) region for thin Si films with thickness of 40-60 nm. ELA enables extremely low resistivity relating to high crystallinity for both the n- and p-type Si films. On the other hand, CW blue laser diode annealing (BLDA) enables the smooth Si surface to have arbitral crystal grains from micro-grains to an anisotropic huge grain structure only by controlling its power density. Both annealing techniques are expected to be applied in the future advanced TFT systems.

저융점 금속분말 재료의 레이저 예열 선택적 용침 (Laser-assisted Selective Infiltration of tow Melting-point Metal Powders)

  • H. Sohn;Lee, J. H.;J. Suh;D. Y. Yang
    • 한국레이저가공학회지
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    • 제7권1호
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    • pp.37-47
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    • 2004
  • Laser-assisted selective infiltration is a new method of building metal layers to make metal parts layer by layer, in which superheated microscopic metal droplets are infiltrated into a laser-preheated layer of microscopic metal powders. In this work, the selective infiltration of a low melting-point metal, Sn-37Pb wt%, was conducted to investigate the effects of such dominant parameters as superheating temperature, Nd:YAG laser power for preheating, substrate temperature, etc. The optimal conditions for successful selective infiltration of a single layer of microscopic metal powder were experimentally obtained

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Novel Design of Ultrashort Pulse Excimer Laser Amplifier System II (Temporal Gain Control and Phase Distortion/ASE Characteristics)

  • Lee, Young-Woo
    • Journal of information and communication convergence engineering
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    • 제1권4호
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    • pp.228-232
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    • 2003
  • The previous design work for very large final amplifier pumped by electron beam module was described from the point of view of energy characteristics. In this work, the design problems for phase front distortion, ASE, and gain control in large aperture amplifier are presented in detail.

펄스형 Nd:YAG 레이저의 교번 충.방전 방식에 의한 고반복 동작특성 (The high repetition operating characteristics of pulsed Nd:YAG laser by alternating charge-discharge system)

  • 김휘영;박구렬;김병균;홍정환;강욱;김희제
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 E
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    • pp.2204-2206
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    • 1999
  • Pulsed Nd:YAC laser is used widely for materials processing and instrumentation. It is very important to control the laser energy density in materials processing by a pulsed Nd:YAG laser. A pulse repetition rate and a pulse width are regarded as the most dominant factors to control the energy density of laser beam. In this study, the alternating charge-discharge system was designed to adjust a pulse repetition rate. This system is controlled by one chip microprocessor and allows to replace an expensive condenser for high frequency to a cheap condenser for low frequency. In addition. we have investigated the current pulse shape of flashlamp and the operating characteristics of a pulsed Nd:YAG laser. As a result, it is found that the laser output of the power supply using the alternating charge-discharge system is not less than that of typical power supply. As the pulse repetition rate rises from 30pps to 120pps by the step of 30pps at 1200V, it is found that the laser efficiency decreases but the laser output power increases about 6W at each step.

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