• Proceedings of the KSRS Conference
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• 1999.11a
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• pp.208-213
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• 1999

Space Physics Sensor (SPS) on-board the KOMPSAT-1 consists of the High Energy Particle Detector (HEPD) and the Ionospheric Measurement Sensor (IMS). The HEPD is to characterize the low altitude high energy particle environment and the effects on the microelectronics due to these high energy Particles. It is composed of four sensors: Proton and Electron Spectrometer(PES), Linear Energy Transfer Spectrometer (LET), Total Dose Monitor (TDM), and Single Event Monitor(SEM). 35MeV proton beam from the medical KCCH cyclotron, at Korea Cancer Center Hospital in Seoul, is used to calibrate the PES. Primary proton beam of 35MeV scattered by polypropylene target is converted to various energy Protons according to the elastic collision kinematics. In this calibration, the threshold level of the proton in the PES can be determined and the energy ranges of PES channels are also calibrated.

• Nuclear Engineering and Technology
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• v.54 no.2
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• pp.701-708
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• 2022

The mass attenuation coefficients (μ_m) of polyethylene glycol (PEG) of different molecular weights (1000-200,000) were measured using single-beam photon transmission. The X-ray fluorescent (XRF) photons from Zinc (Zn), Zirconium (Zr), Molybdenum (Mo), Silver (Ag) and Cadmium (Cd) targets were used to determine the attenuation of gamma radiation of energy range between 8.67 and 23.19 keV in PEG samples. The results were compared to theoretical values using XCOM and Monte Carlo simulation using Geant4 toolkit which was developed to validate the experiment at those certain energies. The mass attenuation coefficients were then used to compute the effective atomic numbers, electron density and half value layers for the studied samples. The outcomes showed good agreement between experimental and simulated results with those calculated theoretically by XCOM within 5% deviation. The PEG 1000 sample showed slightly higher μ_m value compared with the other samples. The dependence of the photon energy and PEG composition on the values of μ_m and HVL were investigated and discussed. In addition, the values of Z_eff and N_eff for all PEG samples behaved similarly in the given photon energy range, and they decreased as the photon energy increased.

• Korean Journal of Materials Research
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• v.17 no.10
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• pp.509-515
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• 2007

In order to fabricate adhesiveless 2-layer flexible copper clad laminate (FCCL) used for COF (chip on film) with high peel strength, polyimide (PI; Kapton-EN, $38\;{\mu}m$) surface was modified by reactive $O_2^+$ and $N_2O^+$ ion beam irradiation. 300 mm-long linear electron-Hall drift ion source was used for ion irradiation with ion current density (J) higher than $0.5\;mA/cm^2$ and energy lower than 200 eV. By vacuum web coating process, PI surface was modified by linear ion source and then 10-20 nm thick Ni-Cr and 200 nm thick Cu film were in-situ sputtered as a tie layer and seed layer, respectively. Above this sputtered layer, another $8-9{\mu}m$ thick Cu layer was grown by electroplating and subsequently acid and base resistance and thermal stability were tested for examining the change of peel strength. Peel strength for the FCCLs treated by both $O_2^+$ and $N_2O^+$ ion irradiation showed similar magnitudes and increased as the thickness of tie layer increased. FCCL with Cu (200 nm)/Ni-Cr (20 nm)/PI structure irradiated with $N_2O^+$ at $1{\times}10^{16}/cm^2$ ion fluence was proved to have a strong peel strength of 0.73 kgf/cm for as-received and 0.34 kgf/cm after thermal test.

• Korean Journal of Materials Research
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• v.21 no.10
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• pp.563-567
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• 2011

We report the structural characterization of $Bi_xZn_{1-x}O$ thin films grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. By increasing the Bi flux during the growth process, $Bi_xZn_{1-x}O$ thin films with various Bi contents (x = 0~13.17 atomic %) were prepared. X-ray diffraction (XRD) measurements revealed the formation of Bi-oxide phase in (Bi)ZnO after increasing the Bi content. However, it was impossible to determine whether the formed Bi-oxide phase was the monoclinic structure ${\alpha}-Bi_2O_3$ or the tetragonal structure ${\beta}-Bi_2O_3$ by means of XRD ${\theta}-2{\theta}$ measurements, as the observed diffraction peaks of the $2{\theta}$ value at ~28 were very close to reflection of the (012) plane for the monoclinic structure ${\alpha}-Bi_2O_3$ at 28.064 and the reflection of the (201) plane for the tetragonal structure ${\beta}-Bi_2O_3$ at 27.946. By means of transmission electron microscopy (TEM) using a diffraction pattern analysis and a high-resolution lattice image, it was finally determined as the monoclinic structure ${\alpha}-Bi_2O_3$ phase. To investigate the distribution of the Bi and Bi-oxide phases in BiZnO films, elemental mapping using energy dispersive spectroscopy equipped with TEM was performed. Considering both the XRD and the elemental mapping results, it was concluded that hexagonal-structure wurtzite $Bi_xZn_{1-x}O$ thin films were grown at a low Bi content (x = ~2.37 atomic %) without the formation of ${\alpha}-Bi_2O_3$. However, the increased Bi content (x = 4.63~13.17 atomic %) resulted in the formation of the ${\alpha}-Bi_2O_3$ phase in the wurtzite (Bi)ZnO matrix.

• Journal of the Korean Vacuum Society
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• v.11 no.2
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• pp.108-112
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• 2002

We investigated the secondary electron emission characteristics of MgO layer used as the protecting material in a.c. plasma display panel(a.c.-PDPs) using a pulsed ion beam technique, where the surface charging can be effectively suppressed during the measurement. The measurement of the secondary electron emission coefficients ($\gamma$) on the surface of $SiO_2$ was carried out and then, it was found that the yields were dependent on incident ion energies. In addition, it was clearly demonstrated that the sputtering on MgO surface leads to lower yields, which suggests that the surface plays a key role on the operating conditions, such as life time, fast response, and etc.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.157-157
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• 2015

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}g/m^2day$. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2day$) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study NBAS process was introduced to deposit enhanced film density single gas barrier layer with a low WVTR. Fig. 1. shows a schematic illustration of the NBAS apparatus. The NBAS process was used for the $Al_2O_3$ nano-crystal structure films deposition, as shown in Fig. 1. The NBAS system is based on the conventional RF magnetron sputtering and it has the electron cyclotron resonance (ECR) plasma source and metal reflector. $Ar^+$ ion in the ECR plasma can be accelerated into the plasma sheath between the plasma and metal reflector, which are then neutralized mainly by Auger neutralization. The neutral beam energy is controlled by the metal reflector bias. The controllable neutral beam energy can continuously change crystalline structures from an amorphous phase to nanocrystal phase of various grain sizes. The $Al_2O_3$ films can be high film density by controllable Auger neutral beam energy. we developed $Al_2O_3$ high dense barrier layer using NBAS process. We can verified that NBAS process effect can lead to formation of high density nano-crystal structure barrier layer. As a result, Fig. 2. shows that the NBAS processed $Al_2O_3$ high dense barrier layer shows excellent WVTR property as a under $2{\times}10^{-5}g/m^2day$ in the single barrier layer of 100nm thickness. Therefore, the NBAS processed $Al_2O_3$ high dense barrier layer is very suitable in the high efficiency OLED application.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.9
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• pp.96-103
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• 1994

The GaAs epilayer was grown at low temperature (LT. 250.deg. C) by molecular beam epitaxy. The properties of the LTT GaAs, before and after Rapid Thermal Annealing(RTA), were analyzed by Reflection of High Energy Electron Diffraction (RHEED), Double Crystal X-ray(DCX), Raman spectroscopy, PL and Photo-Induced Current Transient Spectroscopy (PICTS). The LT GaAs before RTA, was analyzed by RHEED and DCX, with a result of an improved surface morphology under a relatively As-rich(As/Ga ratio :28) condition, and of an increased lattics parameter of 1.1 1.7% in comparison with a GaAs substrate. However DCX and Raman spectroscopy revealed that the expanded lattics parameter and the crystallinity of LT GaAs could be recovered after RTA. On the other hand, PL spectra indicated that LT GaAs after RTA showed low optical sensitivity unlike High Temperature(HT) GaAs, and that its surface morphology and crystallinity were corresponded with those of HT GaAs. Finally PICTS spectra proved the fact that low sensitivity of LT GaAs was due to the deep level defects (Ec-0.85eV) which were strogly formed by raising RTA temperature to 750.deg. C.

• The Journal of Korean Society for Radiation Therapy
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• v.8 no.1
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• pp.41-54
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• 1996

The secondary electrons developed by interaction between primary beam and a tray mounted for blocks in Megavoltage irradiation result in excess soft radiation dose to the surface layer. To reduce this electron contamination, electron filters have been used to be attached under a tray. Various filters with Cu and Al plates in six different thickness and Cu/Al combined plates in 3 different thickness were tested to measure the reduction rate of secondary electron contamination to the surface layer. The measurement to find optimal filter was performed on 6MV linear accelerator in $10 cm{\times}10 cm$ field size and fixed 78.5cm source to measurement points distance from surface to maximum build up point in 2mm intervals. The result was analyzed as the ratio of measured doses with using filters, to standard doses of measured open beam. The result of this study was fellowing : 1. The contaminated low energy radiation were mainly produced by blocking tray. 2. The surface absorbed dose was slowly increased by increasing irradiation field size but rapidly increased at field size above $15cm{\times}15cm$. 3. Al plate upto 2.5mm thickness used as a filter was found to be inadequate due to the failure of reduction of the surface absorbed dose below doses of the under surface upto the maximal build up. Cu 0.5mm plate and Cu 0.28mm/A1 1.5mm compound plate were found to be optimal filters. 4. By using these 2 filters, the absorbed dose to the surface were effectively reduced $5.5\%$ in field size $4cm{\times}4cm,\;11.3\%$ in field size $10cm{\times}10cm,\;22.3\%$ in field size $25cm{\times}25cm$. 5. In field size $10cm{\times}10cm$, the absorbed dose to the surface of irradiation was reduced by setting TSD 20cm at least,. but effective and enough dose reduction could be achieved by setting TSD 30cm as 2 optimal filters used. 6. More surface dose absorbed at TSD less than 7.4cm with a tray and filters together indicated that soft radiation was also developed by filters. 7. The variation of PDD by the different size of irradiation field was minimal as 2 optimal filters used. There was also not different in variation of PDD according to using any of two different filters. 8. PDD was not effected either by various TSD or by using the different filter among two.

• Nuclear Engineering and Technology
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• v.14 no.2
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• pp.70-77
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• 1982

The crosslinking reaction and oxidative stability of low-density polyethylene were studied in the presence of trifunctional monomers and antioxidants with electron beam. The trifunctional monomers used in this study are Trimethylolpropane triacrylate(TMPTA), Trimethylolpropane trimethacrylate(TMPTM) and Triallyl cyanurate(TAC). And the antioxidants are Irganox 1010 (Pentaerythritoltetrakis[3-(3,5-di-t-butyl-4-hydroxyphenyl)-propionatel]), Santo-nox R(4,4'-Thio-bis(3-methyl-6-t-butylphenol)), Nocrac D(N-phenyl-$\beta$-naphthylamine) and Bis-phenol A(4,4'-Isopropylidene bisphenol). Among the monomers, TMPTA is the best crosslinking agent and prvides polyethylene with oxidative stability. Among the antioxidants, Nocrac D is the best antioxidant for polyethylene.

• Journal of the Korean Society of Food Science and Nutrition
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• v.42 no.11
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• pp.1857-1863
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• 2013

Bulgogi sauces containing electron beam-irradiated garlic powder (1%, 3%, and 5%) were used to compare their irradiation status before and after pasteurization ($85^{\circ}C$, 30 min), using a thermoluminescence (TL) analysis by two different laboratories. The sauces with non-irradiated ingredient only provided a background TL glow curve with a maximum peak after $300^{\circ}C$. However, the presence of irradiated ingredient (1 and 10 kGy) was evident through the typical TL glow curves in a temperature range of 150 to $250^{\circ}C$. The concentration of irradiated ingredients showed a greater impact on identification characteristics than their radiation doses. TL ratios ($TL_1/TL_2$) were not able to confirm the results showing evidence of irradiation through the TL glow curve shapes. Pasteurization showed a negligible effect on the key identification parameters and did not change the shape or temperature range of radiation-specific TL glow peak, but reduced TL glow curve intensity. TL glow curve shape with the maximum peak in a temperature range of $150{\sim}250^{\circ}C$ was the most useful characteristic providing information required for confirming the irradiation status.