• 한국전기전자재료학회논문지
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• 제32권3호
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• pp.201-206
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• 2019

This report constitutes the first demonstration in Korea of single-crystal lateral gallium oxide ($Ga_2O_3$) as a metal-oxide-semiconductor field-effect-transistor (MOSFET), with a breakdown voltage in excess of 480 V. A Si-doped channel layer was grown on a Fe-doped semi-insulating ${\beta}-Ga_2O_3$ (010) substrate by molecular beam epitaxy. The single-crystal substrate was grown by the edge-defined film-fed growth method and wafered to a size of $10{\times}15mm^2$. Although we fabricated several types of power devices using the same process, we only report the characterization of a finger-type MOSFET with a gate length ($L_g$) of $2{\mu}m$ and a gate-drain spacing ($L_{gd}$) of $5{\mu}m$. The MOSFET showed a favorable drain current modulation according to the gate voltage swing. A complete drain current pinch-off feature was also obtained for $V_{gs}<-6V$, and the three-terminal off-state breakdown voltage was over 482 V in a $L_{gd}=5{\mu}m$ device measured in Fluorinert ambient at $V_{gs}=-10V$. A low drain leakage current of 4.7 nA at the off-state led to a high on/off drain current ratio of approximately $5.3{\times}10^5$. These device characteristics indicate the promising potential of $Ga_2O_3$-based electrical devices for next-generation high-power device applications, such as electrical autonomous vehicles, railroads, photovoltaics, renewable energy, and industry.

• 한국산업보건학회지
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• 제25권3호
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• pp.294-300
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• 2015

Objectives: The aim of this study is to identify physicochemical properties such as chemical composition, size, shape and crystal structure of powder byproducts generated from a metallization process and its 1st scrubber in the semiconductor industry. Methods: Powder samples were collected from inner chambers during maintenance of the W-plug process equipment (using tungsten hexafluoride as a precursor material) and its 1st scrubber. The chemical composition, size and shape of the powder particles were determined by field emission scanning electron microscopy (SEM) and transmission electron microscopy (TEM) equipped with an energy dispersive spectroscope (EDS). The crystal structure of the powders was analyzed by X-ray diffraction (XRD). Results: From the SEM-EDS and TEM-EDS analyses, O and W were mainly detected, which indicates the powder byproducts are tungsten trioxide ($WO_3$), whereas Al, F and Ti were detected as low peaks. The powder particles were spherical and nearly spherical, and the particle size collected from the process equipment and its 1st scrubber showed 10-20 nm (agglomerates: 55-90 nm) and 16-20 nm (agglomerates: 80-120 nm) as primary particles, respectively. The XRD patterns of the yellow powder byproducts exhibit five peaks at $23.8^{\circ}$ $33.9^{\circ}$ $41.74^{\circ}$ $48.86^{\circ}$ and $54.78^{\circ}$ which correspond to the (200), (220), (222), (400), and (420) planes of cubic $WO_3$. Conclusions: We elucidated the physicochemical characteristics of the powder byproducts collected from W-plug process equipment and its 1st scrubber. This study should provide useful information for the development of alternative strategies to improve the working environment and workers' health.

• 한국재료학회지
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• 제21권8호
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• pp.439-443
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• 2011

The crystal structure and magnetic properties of a new solid solution type ferrite $(Fe_2O_3)_5-(Al_2O_3)_{3.4}-(Ga_2O_3)_{0.6}-SiO$ were investigated using X-ray diffraction and M$\"{o}$ssbauer spectroscopy. The results of the X-ray diffraction pattern indicated that the crystal structure of the sample appears to be a cubic spinel type structure. The lattice constant (a = 8.317 ${\AA}$) decreases slightly with the substitution of $Ga_2O_3$ even though the ionic radii of the Ga ions are larger than that of the Al ions. The results can be attributed to a higher degree of covalency in the Ga-O bonds than in the Al-O and Fe-O bonds, which can also be explained using the observed M$\"{o}$ssbauer parameters, which are the magnetic hyperfine field, isomer shift, and quadrupole splitting. The drastic change in the magnetic structure according to the Ga ion substitution in the $ (Fe_2O_3)_5(Al_2O_3)_{4-x}(Ga_2O_3)_xSiO$ system and the low temperature variation have been studied through a M$\"{o}$ssbauer spectroscopy. The M$\"{o}$ssbauer spectrum at room temperature shows the superpositions of two Zeeman patterns and a strong doublet. It shows significant departures from the prototypical ferrite and is comparable with the diluted ferrite. The doublet of spectrum at room temperature appears to originate from superparamagnetic clusters and also the asymmetry of the doublet appears to be caused by the preferred orientation of the crystallites. The M$\"{o}$ssbauer spectra below room temperature show various complicated patterns, which can be explained by the freezing of the superparamagnetic clusters. On cooling, the magnetic states of the sample were various and multi critical.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.48-48
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• 2011

We have developed a chemically-driven top-down approach using vapor phase HCl to form various GaN nanostructures and successfully demonstrated dislocation-free and strain-relaxed GaN nanostructures without etching damage formed by a selective dissociation method. Our approach overcomes many limitations encountered in previous approaches. There is no need to make a pattern, complicated process, and expensive equipment, but it produces a high-quality nanostructure over a large area at low cost. As far as we know, this is the first time that various types of high-quality GaN nanostructures, such as dot, cone, and rod, could be formed by a chemical method without the use of a mask or pattern, especially on the Ga-polar GaN. It is well known that the Ga-polar GaN is difficult to etch by the common chemical wet etching method because of the chemical stability of GaN. Our chemically driven GaN nanostructures show excellent structure and optical properties. The formed nanostructure had various facets depending on the etching conditions and showed a high crystal quality due to the removal of defects, such as dislocations. These structure properties derived excellent optical performance of the GaN nanostructure. The GaN nanostructure had increased internal and external quantum efficiency due to increased light extraction, reduced strain, and improved crystal quality. The chemically driven GaN nanostructure shows promise in applications such as efficient light-emitting diodes, field emitters, and sensors.

• Journal of the Optical Society of Korea
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• 제18권3호
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• pp.207-216
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• 2014

In this work, we report detailed numerical analysis of the near-elliptic core index-guiding triangular-lattice and square-lattice photonic crystal fiber (PCFs); where we numerically characterize the birefringence, single mode, cut-off behavior and group velocity dispersion and effective area properties. By varying geometry and examining the modal field profile we find that for the same relative values of $d/{\Lambda}$, triangular-lattice PCFs show higher birefringence whereas the square-lattice PCFs show a wider range of single-mode operation. Square-lattice PCF was found to be endlessly single-mode for higher air-filling fraction ($d/{\Lambda}$). Dispersion comparison between the two structures reveal that we need smaller lengths of triangular-lattice PCF for dispersion compensation whereas PCFs with square-lattice with nearer relative dispersion slope (RDS) can better compensate the broadband dispersion. Square-lattice PCFs show zero dispersion wavelength (ZDW) red-shifted, making it preferable for mid-IR supercontinuum generation (SCG) with highly non-linear chalcogenide material. Square-lattice PCFs show higher dispersion slope that leads to compression of the broadband, thus accumulating more power in the pulse. On the other hand, triangular-lattice PCF with flat dispersion profile can generate broader SCG. Square-lattice PCF with low Group Velocity Dispersion (GVD) at the anomalous dispersion corresponds to higher dispersion length ($L_D$) and higher degree of solitonic interaction. The effective area of square-lattice PCF is always greater than its triangular-lattice counterpart making it better suited for high power applications. We have also performed a comparison of the dispersion properties of between the symmetric-core and asymmetric-core triangular-lattice PCF. While we need smaller length of symmetric-core PCF for dispersion compensation, broadband dispersion compensation can be performed with asymmetric-core PCF. Mid-Infrared (IR) SCG can be better performed with asymmetric core PCF with compressed and high power pulse, while wider range of SCG can be performed with symmetric core PCF. Thus, this study will be extremely useful for designing/realizing fiber towards a custom application around these characteristics.

• 한국자기학회지
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• 제2권3호
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• pp.228-232
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• 1992

고온초전도체 $Y_1Ba_2Cu_3O_{7-y}$의 grain을 높은 자기장에서 정렬시켜 여러가지 자기적 특성을 조사하였다. Grain이 정렬된 초전도체는 단결정과 같이 Cu-O layer에 수직, 수평 방향에 대해 자기이방성을 가진다. 2~77 K의 온도영역에서 측정한 lower critical field$(H_{c1})$은 온도가 증가하면서 선형적으로 감소하였는데, Cu-O layer에 대하여 외부 자기장이 수직인 경우가 더욱 급격히 감소하였다. 온도변화에 따른 자율화$(4{\pi}\;X)$의 측정으로부터 극저온의 자화율이 -1에 가까운 값을 가진다는 것을 알 수 있었다. 또한 이 자화 곡선을 London의 공식과 two-fluid model을 이용해 최소자승법으로 fitting하여 절대 영도에서 침투깊이$({\lambda}_0)$를 구하였다. 또한 2 K에서 외부 자기장에 따른 자화곡선을 측정하였으며, Bean의 critical state model을 이용한 임계전류밀도$(J_c)$의 계산으로부터 grain내부는 단결정 수준의 높은 $(J_c)$를 가지고 있음을 알 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.252.2-252.2
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• 2013

ZnO nanostructures have a lot of interest for decades due to its varied applications such as light-emitting devices, power generators, solar cells, and sensing devices etc. To get the high performance of these devices, the factors of nanostructure geometry, spacing, and alignment are important. So, Patterning of vertically- aligned ZnO nanowires are currently attractive. However, many of ZnO nanowire or nanorod fabrication methods are needs high temperature, such vapor phase transport process, metal-organic chemical vapor deposition (MOCVD), metal-organic vapor phase epitaxy, thermal evaporation, pulse laser deposition and thermal chemical vapor deposition. While hydrothermal process has great advantages-low temperature (less than $100^{\circ}C$), simple steps, short time consuming, without catalyst, and relatively ease to control than as mentioned various methods. In this work, we investigate the dependence of ZnO nanowire alignment and morphology on si substrate using of nanosphere template with various precursor concentration and components via hydrothermal process. The brief experimental scheme is as follow. First synthesized ZnO seed solution was spun coated on to cleaned Si substrate, and then annealed $350^{\circ}C$ for 1h in the furnace. Second, 200nm sized close-packed nanospheres were formed on the seed layer-coated substrate by using of gas-liquid-solid interfacial self-assembly method and drying in vaccum desicator for about a day to enhance the adhesion between seed layer and nanospheres. After that, zinc oxide nanowires were synthesized using a low temperature hydrothermal method based on alkali solution. The specimens were immersed upside down in the autoclave bath to prevent some precipitates which formed and covered on the surface. The hydrothermal conditions such as growth temperature, growth time, solution concentration, and additives are variously performed to optimize the morphologies of nanowire. To characterize the crystal structure of seed layer and nanowires, morphology, and optical properties, X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, and photoluminescence (PL) studies were investigated.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.1265-1268
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• 2005

In this study, the synthesis and semiconducting properties of cation and defect-doped $KTaO_3$ film is reported. $KTaO_3$ is an important material for optoelectronic and tunable microwave applications. It is an incipient ferroelectric with a cubic structure that becomes ferroelectric when doped with Nb. While numerous studies have investigated the thin-film growth of semiconducting perovskites, little is reported about semiconducting $KTaO_3$ thin films. In this work, the films were grown on (001) MgO single crystal substrates using pulsed-laser deposition. Semiconducting behavior is achieved by inducing oxygen vacancies in the $KTaO_3$ lattice via growth in a hydrogen atmosphere. The resistivity of semiconducting $KTaO_3:Ca$ films was as low as 10cm, and n-type semiconducting behavior was indicated. Hall mobility and carrier concentration were $0.27cm^2/Vs$ and $3.21018cm^{-3}$, respectively. Crystallinity and microstructure of the $KTaO_3:Ca$ films were examined using X-ray diffraction and field-emission scanning microscopy.

• 한국생산제조학회지
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• 제9권5호
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• pp.105-111
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• 2000

Micronization of sensor is a trend of the silicon sensor development with regard to a piezoresistive silicon pressure sensor, the size of the pressure sensor diaphragm have become smaller year by year, and a microaccelerometer with a size less than 200~300${\mu}{\textrm}{m}$ has been realized. Over the past four or five years, numerical modeling of microsensors and microstructures has gradually been developed as a field of microelectromechanical system(MEMS) design process. In this paper, we study some of the micromachining processes of single crystal silicon(SCS) for the microaccelerometer, and their subsequent processes which might affect thermal and mechanical loads. The finite element method(FEM) has been a standard numerical modeling technique extensively utilized in structural engineering discipline for component design of microaccelerometer. Temperature rise sufficiently low at the suspended beams. Instead, larger temperature gradient can be seen at the bottom of paddle part. The center of paddle part becomes about 5~2$0^{\circ}C$ higher than the corner of paddle and suspended beam edges.

• 한국안전학회지
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• 제19권2호
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• pp.6-10
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• 2004

The magnetic polishing is the useful method to finish using magnetic power of magnet. This method is one of precision polishing techniques and has an aim of the clean technology using for the pure of gas and inside of the clean pipe for transportation. The magnetic abrasive polishing method is not so common for machine that it tis not spreaded widely. There are rarely researcher in this field because of non-effectiveness of magnetic abrasive. Therefore, in ths paper deals with development of the magnetic abrasive using sludge. In this development, abrasive grain WA and GC used to resin bond fabricated low temperature. And magnetic material was fabricated from the sludge which were crused into 200 mesh and average diameter ${\o}$1.2mm ball type. The XRD analysis result show that only WA and GC abrasive and sludge crystal peaks detected which explains resin bond was not any more chemical reaction. From SEM analysis it tis found that WA and GC abrasive and sludge were stron bonding with each other by bond.