• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.248-248
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• 2012

Synthesis graphene on Cu substrate by plasma-enhanced chemical vapor deposition (PE-CVD) is investigated and its quality's affection factors are discussed in this work. Compared with the graphene synthesized at high temperature in chemical vapor deposition (CVD), the low-temperature graphene film by PE-CVD has relatively low quality with many defects. However, the advantage of low-temperature is also obvious that low melting point materials will be available to synthesize graphene as substrate. In this study, the temperature will be kept constant in $400^{\circ}C$ and the graphene was grown in plasma environment with changing the plasma power, the flow rate of precursors, and the distance between plasma generator coil and substrates. Then, we investigate the effect of temperature and the influence of process variables to graphene film's quality and characterize the film properties with Raman spectroscopy and sheet resistance and optical emission spectroscopy.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.1082-1086
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• 2004

Since the sheet forming of Mg alloy has many difficulties due to the low formability, many forming conditions need to be selected properly. Especially, the process variables should be investigated to increase the formability, such as, forming temperature. In this paper, the effects of forming process variables has been investigated using the bending and deep drawing process. A simple U-bending designed for mobile part could be formed in room temperature and springback amounts are surveyed. On the other hand, square cup part couldn't be formed in room temperature due to the low formability. Therefore, the effects of forming temperature are investigated in deep drawing process for square cup part. As a experimental and FEM results, the optimum forming temperature is presence and formability in a higher temperature is less than that of lower temperature. Above experimental results are compared with the FEM analysis and well coincided with the experimental results. Therefore, more detail investigations could be progressed to select more appropriate process conditions by the FEA.

• Transactions of Materials Processing
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• v.18 no.2
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• pp.166-171
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• 2009

In this paper, a basic study on micro cutting process with SM20C at low temperature environment was performed. In macro cutting fields, the cryogenic cutting process has been applied to cut the refractory metal but, the serious problem may be generated in micro cutting fields by the cryogenic environment. However, if the proper low temperature is applied to micro cutting area, the cooling effect of cutting heat is expected. Such effect can make the reduction of tool wear and burr formation. For verifying this possibility, the micro cutting experiment at low temperature was performed and SEM images were analyzed.

• Current Applied Physics
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• v.18 no.11
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• pp.1436-1440
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• 2018

SiN and SiCN film production using plasma-enhanced atomic layer deposition (PE-ALD) is investigated in this study. A developed high-power and high-density multiple inductively coupled plasma (multi-ICP) source is used for a low temperature PE-ALD process. High plasma density and good uniformity are obtained by high power $N_2$ plasma discharge. Silicon nitride films are deposited on a 300-mm wafer using the PE-ALD method at low temperature. To analyze the quality of the SiN and SiCN films, the wet etch rate, refractive index, and growth rate of the thin films are measured. Experiments are performed by changing the applied power and the process temperature ($300-500^{\circ}C$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.54-58
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• 1994

H$_2$ bake and GeH$_4$ clean are used as a in-situ pre-clean method in low temperature Si based epitaxial growth technology using rapid thermal processing chemical vapor deposition (RTPCVD). In this paper, the H$_2$ bake and GeH$_4$ clean processes are optimized for low surface defect density using Taguchi method. In H$_2$ bake process, the epitaxial growth temperature affects dominantly on the surface defect density, and the next affecting factors are H$_2$ bake temperature and rinse time in de-ionised water. In GeH$_4$ clean process, GeH$_4$ clean temperature affects most strongly on the surface defect density, and the minor factor is GeH$_4$flow rate. The optimum process conditions predicted fly Taguchi method agree well with tile experimental data in both in-situ clean processes.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.303-306
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• 2005

We report the self-aligned low temperature poly silicon (LTPS) TFT process using simple doping process. In conventional LTPS-TFT, the Lightly Doped Drain (LDD) doping and source/drain doping are processed separately by aligning the gate with the source and drain during the gate lithography step. This ne w process not only fabricates fully self-aligned low temperature poly silicon TFTs with symmetric LDD structure but also simplifies the process flow with combined source/drain doping and LDD doping in one step. LDD doping process can be achieved using only source/drain doping process according to the new structure. In this paper, the TFT characteristics of NMOS and PMOS using the new doping process will be discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.289.1-289.1
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• 2016

Germanium (Ge) with higher carrier mobility and a lower crystallization temperature has been considered as the channel material of thin-film transistors for display applications. Various methods were studied for crystallizaion of poly-Ge from amorphous Ge at low temperature. Especially Metal induced crystalliazation (MIC) process was widely studied because low process cost. In this paper, we investigate copper diffusion process of different thick (70 nm, 350 nm) poly-Ge film obtained by MIC process at various temperatures (250, 300, and $350^{\circ}C$) through atomic force microscopy (AFM), Raman spectroscopy, and secondary ion mass spectroscopy (SIMS) measurement. Crystallization completeness and grain size was similar in all the conditions. Copper diffusion profile of 370 nm poly-Ge film show simirly results regardless of process temperature. However, copper diffusion profile of 70 nm poly-Ge film show different results by process temperature.

• Clean Technology
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• v.20 no.4
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• pp.359-366
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• 2014

Attrition characteristics of PKM1-SU particles, $CO_2$ absorbents for pre-combustion $CO_2$ capture process, and FCC particles, catalytic particles for hydro cracking of crude oil, were investigated at high temperature and high pressure conditions. Particle attrition tests were executed at various kinds of temperature ($0-400^{\circ}C$) and pressure (0-20 bar) conditions in a cylinder type bubbling fluidized bed with 15.1 cm diameter, 120 cm height and 1 mm orifice-sparger tube. Attrited particles before and after tests were analyzed by BET, optical microscopy, and particle size analyzer. Effects of bed material height (solid inventory) and steam injection were also verified by using ASTM D5757-95, conventional attrition test method.

• Journal of the Korean Applied Science and Technology
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• v.38 no.6
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• pp.1561-1567
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• 2021

In this study, we have studied synthesis of zirconia-alumina composite coating materials via a low-temperature sol-gel process. The zirconia-alumina composites were prepared by coating zirconia precursor, alumina precursor, and organosilane mixture on a polyethylene terephthalate substrate through three steps: sol-gel process, low-temperature photocuring process, and heat treatment process. The structural properties and element analysis of the composites were confirmed by FT-IR and XPS. The coated composite showed a transmittance of 96% or more in the visible light region with a wavelength of 420 nm or more and pencil hardness of 9H or more. In case of the composite of the molar ratio of zirconia and alumina of 1:4, the highest nanoindentation hardness was measured with 1.212 GPa.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.5
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• pp.486-491
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• 2008

The plasma processing is applied to many industrial fields as thin film deposition or surface treatment technique. In this study, we investigated large-area uniformed surface treatment of PET film at low temperature by using Scanning Plasma Method(SPM). Then, we measured difference and distribution of temperature on film's surface by setting up a thermometer. We studied the condition of plasma for surface treatment by examining intensity of irradiation of uniformed plasma. And we compared contact angles of treated PET film by using Ar and $O_2$ plasma based low temperature. In our result, surface temperature of 3-point of treating is low temperature about $22^{\circ}C$, in other hands, there is scarcely any variation of temperature on film's surface. And by using Ar plasma treatment, contact angle is lower than untreatment or $O_2$ plasma treatment. In case of PET film having thermal weak point, low temperature processing using SPM is undamaged method in film's surface and uniformly treated film's surface. As a result, Ar plasma surface treatment using SPM is suitable surface treatment method of PET film.