• Journal of IKEEE
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• v.12 no.2
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• pp.81-86
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• 2008

In wireless communication system using 2.4GHz radio link, data rate varies with time due to interferences, which causes the performance degradation. Therefore, effective transmission methods are required to obtain better performance according to varying data rate. This paper proposes a novel method that increases the data rate, as well as the influence of different loop-filter bandwidths on the performance of the PLL. Experimental results show that the proposed method is effective because it can achieve higher throughput in various data rate.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.2
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• pp.194-201
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• 2015

A frequency modulated ultra-wideband (FM-UWB) transmitter with a high-robust relaxation oscillator for subcarrier generation and a dual-path Ring VCO for RF FM is proposed, featuring low power and low complexity. A prototype 3.65-4.25 GHz FM-UWB transceiver employing the presented transmitter is fabricated in $0.18{\mu}m$ CMOS for short-range wireless data transmission. Experimental results show a bit error rate (BER) of $10^{-6}$ at a data rate of 12.5 kb/s with a communication distance of 60 cm is achieved and the power dissipation of 4.3 mW for the proposed transmitter is observed from a 1.8 V supply.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1382-1384
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• 1995

In order to study the structure of RF glow discharge driven at 13.56MHz in argon, the discharge voltage, current and phase shift between them will be measured over a wide range of discharge parameters(gas pressure between 1mTorr and 50mTorr with discharge power between 20mW and 200W). In this paper, the dc glow discharge characteristics and plasma parameters of both FTS and CPMS systems are studied experimentally. It is found that for CPMS system discharge is stablized under wider ranges of magnetic field and pressure than for FTS system. The plasma density and electron temperature of the plasma for these two systems are in the range of $10^{10}{\sim}7{\times}10^{11}[cm^{-3}]$ and $3.5{\sim}6.5$[eV], respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.292-292
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• 2014

Wide band gap semiconductors, such as III-nitrides (GaN, AlN, InN, and their alloys), SiC, and diamond are expected to play an important role in the next-generation electronic devices. Specifically, GaN-based high electron mobility transistors (HEMTs) have been targeted for high power, high frequency, and high temperature operation electronic devices for mobile communication systems, radars, and power electronics because of their high critical breakdown fields, high saturation velocities, and high thermal conductivities. For the stable operation, high power, high frequency and high breakdown voltage and high current density, the fabrication methods have to be optimized with considerable attention. In this study, low ohmic contact resistance and smooth surface morphology to AlGaN/GaN on 2 inch c-plane sapphire substrate has been obtained with stepwise annealing at three different temperatures. The metallization was performed under deposition of a composite metal layer of Ti/Al/Ni/Au with thickness. After multi-layer metal stacking, rapid thermal annealing (RTA) process was applied with stepwise annealing temperature program profile. As results, we obtained a minimum specific contact resistance of $1.6{\times}10^{-7}{\Omega}cm2$.

• Nuclear Engineering and Technology
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• v.56 no.2
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• pp.568-574
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• 2024

The development of radiation-tolerant radio-frequency (RF) systems can be a solution for applications in extreme radiation environments, such as nuclear power plant monitoring and space exploration. Among the crucial components within an RF system, the low noise amplifier (LNA) stands out due to its vulnerability to TID effects, mainly relying on transistors as its main devices. In this study, the TID effects in the LNA using standard 0.18 ㎛ complementary metal oxide semiconductors (CMOS) technology are estimated and analyzed. The results show that the LNA can withstand absorbed radiation up to 100 kGy. The S₂₁, S₁₁, noise figure (NF), stability (K), and linearity of the third input intercept point (IIP3) slightly shifted from the initial values of 0.8312 dB, 0.793 dB, 0.00381 dB, 1.34406, and 2.36066 dBm, respectively which are still comparable to the typical performances. Moreover, the standard 0.18 ㎛ technology has demonstrated its radiation tolerance, as it exhibits negligible performance degradation in the conventional LNA even when exposed to radiation levels up to 100 kGy. In this context, simulation approach offers a means to predict the TID effects and estimate the radiation exposure limit for electronic devices, particularly when transistors are used as the primary RF components.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1133-1136
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• 2002

We designed and fabricated a low local oscillation (LO) power V-band CPW mixer module using a CPW-to-waveguide transition technology for the application of millimeter-wave wireless communication systems. The mixer was designed using a unique gate mixing architecture to achieve simultaneously a low LO input power, a high conversion gain, and good LO-RF isolation characteristics. The fabricated mixer exhibited a high conversion gain of 2 dB at a low LO power of 0 dBm. For data transmission of the 60 ㎓ wireless LNA systems, we fabricated a CPW-to-waveguide converter module of WR-15 type and mounted the fabricated mixer in the converter module. The fabricated V-band mixer exhibited a higher conversion gain and a lower LO input power than other reported V-band mixers.

• Journal of electromagnetic engineering and science
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• v.14 no.2
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• pp.61-67
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• 2014

This paper presents a zero-IF CMOS RF receiver, which supports three channel bandwidths of 5/10/40MHz for LTE-Advanced systems. The receiver operates at IMT-band of 2,500 to 2,690MHz. The simulated noise figure of the overall receiver is 1.6 dB at 7MHz (7.5 dB at 7.5 kHz). The receiver is composed of two parts: an RF front-end and a baseband circuit. In the RF front-end, a RF input signal is amplified by a low noise amplifier and $G_m$ with configurable gain steps (41/35/29/23 dB) with optimized noise and linearity performances for a wide dynamic range. The proposed baseband circuit provides a -1 dB cutoff frequency of up to 40MHz using a proposed wideband OP-amp, which has a phase margin of $77^{\circ}$ and an unit-gain bandwidth of 2.04 GHz. The proposed zero-IF CMOS RF receiver has been implemented in $0.13-{\mu}m$ CMOS technology and consumes 116 (for high gain mode)/106 (for low gain mode) mA from a 1.2 V supply voltage. The measurement of a fabricated chip for a 10-MHz 3G LTE input signal with 16-QAM shows more than 8.3 dB of minimum signal-to-noise ratio, while receiving the input channel power from -88 to -12 dBm.

• 제어로봇시스템학회:학술대회논문집
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• 2005.06a
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• pp.1826-1829
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• 2005

Recent advancement in wireless communications and electronics has enabled the development of low power sensor network. Wireless sensor network are often used in remote monitoring control applications, health care, security and environmental monitoring. Wireless sensor networks are an emerging technology consisting of small, low-power, and low-cost devices that integrate limited computation, sensing, and radio communication capabilities. Sensor network platform for health care has been designed, fabricated and tested. This system consists of an embedded micro-controller, Radio Frequency (RF) transceiver, power management, I/O expansion, and serial communication (RS-232). The hardware platform uses Atmel ATmega128L 8-bit ultra low power RISC processor with 128KB flash memory as the program memory and 4KB SRAM as the data memory. The radio transceiver (Chipcon CC1000) operates in the ISM band at 433MHz or 916MHz with a maximum data rate of 76.8kbps. Also, the indoor radio range is approximately 20-30m. When many sensors have to communicate with the controller, standard communication interfaces such as Serial Peripheral Interface (SPI) or Integrated Circuit ($I^{2}C$) allow sharing a single communication bus. With its low power, the smallest and low cost design, the wireless sensor network system and wireless sensing electronics to collect health-related information of human vitality and main physiological parameters (ECG, Temperature, Perspiration, Blood Pressure and some more vitality parameters, etc.)

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.166-176
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• 2007

Radio frequency (RF) microelectromechanical systems (MEMS) have been pursued for more than a decade as a solution of high-performance on-chip fixed, tunable and reconfigurable circuits. This paper reviews our research work on RF MEMS switches and switching circuits in the past five years. The research work first concentrates on the development of lateral DC-contact switches and capacitive shunt switches. Low insertion loss, high isolation and wide frequency band have been achieved for the two types of switches; then the switches have been integrated with transmission lines to achieve different switching circuits, such as single-pole-multi-throw (SPMT) switching circuits, tunable band-pass filter, tunable band-stop filter and reconfigurable filter circuits. Substrate transfer process and surface planarization process are used to fabricate the above mentioned devices and circuits. The advantages of these two fabrication processes provide great flexibility in developing different types of RF MEMS switches and circuits. The ultimate target is to produce more powerful and sophisticated wireless appliances operating in handsets, base stations, and satellites with low power consumption and cost.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.41 no.6
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• pp.689-697
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• 2016

In this paper, we design and implement SPA (Switched Parasitic Antenna) antenna which can control its beampattern using multiple parasitic elements. By applying SPA antenna to wireless communication system and implementing beamforming scheme, we show that SPA antenna can be used to improve the performance of wireless communication systems. SPA antenna consists of a single active antenna and multiple parasitic elements around the active one, and can control its beampattern by switching the parasitic elements. Using this characteristic of the SPA antenna, it is possible to impelemtent beamforming technique with single RF chain, which enables to design low cost, low complexity and low power wireless communication systems. In order to verify the beamforming gain, we measure and analyze the system level performance, such as SNR, PER, and throughput.