• Journal of KIISE:Computer Systems and Theory
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• v.35 no.1
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• pp.18-29
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• 2008

NAND Flash memory has been growing popular storage device for the last years because of its low power consumption, fast access speed, shock resistance and light weight properties. However, it has the distinct characteristics such as erase-before-write architecture, asymmetric read/write/erase speed, and the limitation on the number of erasure per block. Due to these limitations, various Flash Translation Layers (FTLs) have been proposed to effectively use NAND flash memory. The systems that adopted the conventional FTL may result in severe performance degradation by the hot data which are frequently requested data for overwrite in the same logical address. In this paper, we propose a novel FTL algorithm called Adaptive Flash Translation Layer (AFTL) which uses sector mapping method for hot data and log-based block mapping method for cold data. Our system removes the redundant write operations and the erase operations by the separating hot data from cold data. Moreover, the read performance is enhanced according to sector translation that tends to use a few read operations. A series of experiments was organized to inspect the performance of the proposed method, and they show very impressive results.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.1
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• pp.585-591
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• 2017

Turbocharging is widely used in diesel and gasoline engines as an effective way to reduce fuel consumption. But turbochargers have turbo-lag due to mechanical friction losses. Bearing friction losses are a major cause of mechanical friction losses and are particularly intensified in the lower speed range of the engine. Current turbochargers mostly use oil bearings (two journal bearings and one thrust bearing). In this study, we focus on the bearing friction in the lower speed range. Experimental equipment was made using a drive motor, load cell, magnetic coupling, and oil control system. We measured the friction losses of the turbocharger while considering the influence of the rotation speed, oil temperature, and pressure. The friction power losses increased exponentially when the turbocharger speed increased.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.8
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• pp.74-85
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• 2015

PCI Express is a well-known and widely used de-facto system bus standard for connecting among a processor and IO devices. PCI Express is originated from old PCI standard, and its most of applications are limited to be used within a PC or server system. But, because of its fast speed, low power consumption, and good protocol efficiency, it is considered as one of a good candidate for an alternate system interconnect for many years. In this paper, we present design, implementation and early evaluation of an alternate system interconnect by utilizing PCI Express. The developed alternate system interconnect using PCI Express (named PCIeLINK) utilizes non-transparent bridging (NTB) technic which generally used in fail-over system in PCI and PCI Express. By using NTB technic, PCI Express device can be extended to outside of a system without electrical and logical problems arising during system boot and enumeration. To build up an alternate system interconnect, we designed and implemented a network interface card having multiple PCI Express ${\times}4$ connections (theoretically 20 Gbps) and tested, The early test results revealed that an ${\times}4$ port in the card showed 8.6 Gbps peak performance for bulk transmission and 5.1 Gbps peak for normal TCP/IP transfer.

• Korean Journal of Materials Research
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• v.30 no.10
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• pp.509-514
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• 2020

The two key variables of an Si solar cell, i.e., emitter (n-type window layer) and base (p-type substrate) doping levels or concentrations, are studied using Medici, a 2-dimensional semiconductor device simulation tool. The substrate is p-type and 150 ㎛ thick, the pn junction is 2 ㎛ from the front surface, and the cell is lit on the front surface. The doping concentration ranges from 1 × 10¹⁰ cm^-3 to 1 × 10²⁰ cm^-3 for both emitter and base, resulting in a matrix of 11 by 11 or a total of 121 data points. With respect to increasing donor concentration (Nd) in the emitter, the open-circuit voltage (Voc) is little affected throughout, and the short-circuit current (Isc) is affected only at a very high levels of Nd, exceeding 1 × 10¹⁹ cm^-3, dropping abruptly by about 12%, i.e., from Isc = 6.05 × 10^-9 A·㎛^-1, at Nd = 1 × 10¹⁹ cm^-3 to Isc = 5.35 × 10^-9 A·㎛^-1 at Nd = 1 × 10²⁰ cm^-3, likely due to minority-carrier, or hole, recombination at the very high doping level. With respect to increasing acceptor concentration (Na) in the base, Isc is little affected throughout, but Voc increases steadily, i.e, from Voc = 0.29 V at Na = 1 × 10¹² cm^-3 to 0.69 V at Na = 1 × 10¹⁸ cm^-3. On average, with an order increase in Na, Voc increases by about 0.07 V, likely due to narrowing of the depletion layer and lowering of the carrier recombination at the pn junction. At the maximum output power (Pmax), a peak value of 3.25 × 10^-2 W·cm^-2 or 32.5 mW·cm^-2 is observed at the doping combination of Nd = 1 × 10¹⁹ cm^-3, a level at which Si is degenerate (being metal-like), and Na = 1 × 10¹⁷ cm^-3, and minimum values of near zero are observed at very low levels of Nd ≤ 1 × 10¹³ cm^-3. This wide variation in Pmax, even within a given kind of solar cell, indicates that selecting an optimal combination of donor and acceptor doping concentrations is likely most important in solar cell engineering.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.148-148
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• 2011

Recently, there have been many research activities to develop the large-area plasma source, which is able to generate the high-density plasma with relatively good uniformity, for the plasma processing in the thin-film solar cell and display panel industries. The large-area CCP sources have been applied to the PECVD process as well as the etching. Especially, the PECVD processes for the depositions of various films such as a-Si:H, ${\mu}c$-Si:H, Si3N4, and SiO2 take a significant portion of processes. In order to achieve higher deposition rate (DR), good uniformity in large-area reactor, and good film quality (low defect density, high film strength, etc.), the application of VHF (>40 MHz) CCP is indispensible. However, the electromagnetic wave effect in the VHF CCP becomes an issue to resolve for the achievement of good uniformity of plasma and film. Here, we propose a new electrode as part of a method to resolve the standing wave effect in the large-area VHF CCP. The electrode is split up a series of strip-type electrodes and the strip-type electrodes and the ground ones are arranged by turns. The standing wave effect in the longitudinal direction of the strip-type electrode is reduced by using the multi-feeding method of VHF power and the uniformity in the transverse direction of the electrodes is achieved by controlling the gas flow and the gap length between the powered electrodes and the substrate. Also, we provide the process results for the growths of the a-Si:H and the ${\mu}c$-Si:H films. The high DR (2.4 nm/s for a-Si:H film and 1.5 nm/s for the ${\mu}c$-Si:H film), the controllable crystallinity (~70%) for the ${\mu}c$-Si:H film, and the relatively good uniformity (1% for a-Si:H film and 7% for the ${\mu}c$-Si:H film) can be obtained at the high frequency of 40 MHz in the large-area discharge (280 mm${\times}$540 mm). Finally, we will discuss the issues in expanding the multi-electrode to the 8G class large-area plasma processing (2.2 m${\times}$2.4 m) and in improving the process efficiency.

• Journal of Sensor Science and Technology
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• v.8 no.2
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• pp.115-123
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• 1999

A micro-gas sensor with heater and sensing electrode on the same plane was fabricated on phosphosilicate glass(PSG, 800nm)/$Si_3N_4$ (150nm) dielectric membrane. PSG film was provided by atmospheric pressure chemical vapor deposition(APCVD), and $Si_3N_4$ film by low pressure chemical vapor deposition (LPCVD). Total area of the fabricated device was $3.78{\times}3.78mm^2$. The area of diaphragm was $1.5{\times}1.5mm^2$, and that of the sensing layer was $0.24{\times}0.24mm^2$. Finite-element simulation was employed to estimate temperature distribution for a square-shaped diaphragm. The power consumption of Pt heater was about 85mW at $350^{\circ}C$. Tin thin films were deposited on the silicon substrate by thermal evaporation at room temperature and $232^{\circ}C$, and tin oxide films($SnO_2$) were prepared by thermal oxidation of the metallic tin films at $650^{\circ}C$ for 3 hours in oxygen ambient. The film analyses were carried out by SEM and XRD techniques. Effects of humidity and ambient temperature on the resistance of the sensing layer were found to be negligible. The fabricated micro-gas sensor exhibited high sensitivity to butane gas.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.12
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• pp.2857-2863
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• 2014

IR-UWB has been developed as a standard of indoor ranging technology, because it has robust and good transmission characteristics in indoor environments and it can be operated with low power. In this paper, a IR-UWB packet analyzer is designed and implemented based on IEEE 802.15.4a, which is useful in developing IR-UWB real time location system with resolution of a few ten centimeters. A sniffer device of the packet analyzer monitors IR-UWB wireless networks, captures MAC packet frames, and transmits packet frames to the packet analyzing computer. The packet analyzing program in a computer analyzes received MAC packet frames and displays parsed packet information for developing engineers. Developed packet analyzer is used to analyze IEEE 802.15.4a MAC protocol, and also it can be used in other IEEE 802 series MAC protocol by modifying some functions.

• The KIPS Transactions:PartD
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• v.15D no.6
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• pp.755-766
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• 2008

Recently, NAND flash memory is becoming into the spotlight as a next-generation storage device because of its small size, fast speed, low power consumption, and etc. compared to the hard disk. However, due to the distinct characteristics such as erase-before-write architecture, asymmetric operation speed and unit, disk-based systems and applications may result in severe performance degradation when directly implementing them on NAND flash memory. Especially when a B-tree is implemented on NAND flash memory, intensive overwrite operations may be caused by record inserting, deleting, and reorganizing. These may result in severe performance degradation. Although ${\mu}$-tree has been proposed in order to overcome this problem, it suffers from frequent node split and rapid increment of its height. In this paper, we propose Log-Structured B-Tree(LSB-Tree) where the corresponding log node to a leaf node is allocated for update operation and then the modified data in the log node is stored at only one write operation. LSB-tree reduces additional write operations by deferring the change of parent nodes. Also, it reduces the write operation by switching a log node to a new leaf node when inserting the data sequentially by the key order. Finally, we show that LSB-tree yields a better performance on NAND flash memory by comparing it to ${\mu}$-tree through various experiments.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.48 no.4
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• pp.47-53
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• 2011

The Electric Multiple Unit (EMU) has many types of door system such as sliding door, plug door etc.al. according to customer's requirements. The sliding door is widely used in Korea but has weak point in the noise problem. In the low operation speed, the noise coming from outer side of the EMU is not an important factor. As the speed is higher than before, noise is increased and make a problem. The main cause of noise is the imperfect air tightness in the EMU. The plug door system has advantages for the noise reduction characteristic in the high speed area. We have been developing electric plug-in door. The door is controlled by Door Control Unit(DCU) following the order of Automatic Train Protection (ATP) that is a kind of train signalling system. DCU has to simultaneously open and close the doors and the operation of it is related to the passengers safety. So DCU is a safety device that is important to reliability and safety. DCU is composed of several devices of control, motor driving, Input/Output, communication and power. In this paper, we will describe the functions, characteristic, requirement, subsystem and test results of DCU used for the electric plug-in door.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.207-214
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• 2005

This paper presents a channel structure for promising high performance pseudomorphic high electron mobility transistor(pHEMT) switching device for design and fabricating of microwave control circuits, such as switches, phase shifters, attenuators, limiters, for application in personal mobile communication systems. Using the designed epitaxial channel layer structure and ETRI's $0.5\mu$m pHEMT switch process, single pole double throw (SPDT) Tx/Rx monolithic microwave integrated circuit (MMIC) switch was fabricated for 2.4 GHz and 5 GHz band wireless local area network (WLAN) systems. The SPDT switch exhibits a low insertion loss of 0.849 dB, high isolation of 32.638 dB, return loss of 11.006 dB, power transfer capability of 25dBm, and 3rd order intercept point of 42dBm at frequency of 5.8GHz and control voltage of 0/-3V These performances are enough for an application to 5 GHz band WLAN systems.