• Journal of the Korean institute of surface engineering
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• v.39 no.3
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• pp.137-141
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• 2006

Process window for infinite etch selectivity of silicon nitride $(Si_3N_4)$ layers to ArF photoresist (PR) was investigated in dual frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters such as low frequency power $(P_{LF})$, $CH_2F_2$ and $H_2$ flow rate in $CH_2F_2/H_2/Ar$ plasma. It was found that infinite etch selectivities of $Si_3N_4$ layers to the ArF PR on both blanket and patterned wafers can be obtained for certain gas flow conditions. The etch selectivity was increased to the infinite values as the $CH_2F_2$ flow rate increases, while it was decreased from the infinite etch selectivity as the $H_2$ flow rate increased. The preferential chemical reaction of the hydrogen with the carbon in the polymer film and the nitrogen on the $Si_3N_4$ surface leading to the formation of HCN etch by-products results in a thinner steady-state polymer and, in turn, to continuous $Si_3N_4$ etching, due to enhanced $SiF_4$ formation, while the polymer was deposited on the ArF photoresist surface.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.172-172
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• 2016

The International Maritime Organization(IMO) adopted the International Convention for the Control and Management of Ships' Ballast Water and Sediments in 2004 to prevent the transfer of aquatic organisms via ballast water. Forty ballast water treatment systems were granted final approval. A variety of techniques have been developed for ballast water treatment including UV treatment, indirect or direct electrolysis, ozone treatment, chemical compounds and plasma-arc method. In particular, using plasma and ozone nano-bubble treatments have been attracted in the fields. However, these treatment systems have a problem such as remained toxic substance, demand for high power source, low efficiency, ets. In this paper, we present our strilization results obtained from membrane type electrolytic-reduction treatment system The core of an electrolysis unit is an electrochemical cell, which is filled with pure water and has two electrodes connected with an external power supply. At a certain voltage, which is called critical voltage, between both electrodes, the electrodes start to produce hydrogen gas at the negatively biased electrode and oxygen gas at the positively biased electrode. The amount of gases produced per unit time is directly related to the current that passes through the electrochemical cell. From the results, we could confirm the sterilization effect of bacteria such as S. aureus, E. Coli and demonstrate the mechanism of sterilization phenomena by electrolytic-reduction treatment system.

• Korean Journal of Food Science and Technology
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• v.33 no.1
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• pp.7-11
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• 2001

The influence of temperature and calcium concentration on the gelation kinetics of purified Aigeok system has been investigated by small deformation oscillatory measurement. DE(degree of esterification) of the present sample was indicated of low methoxyl Aigeok polysaccharide by FT-IR. The calcium induced gelation of Aigeok has been studied. Both moduli reached the saturation value during the period of experiments. Rate constant increased with increasing calcium concentration, however above 4.08 mM calcium chloride caused a sudden drop in gel strength. The experimental result that the decrease in gel strength at high calcium concentration was seems to be phase separation or competitive inhibition between calcium ions. The storage and loss shear moduli decreased with increasing temperature. The rate constant of Aigeok system remarkably dropped above $35^{\circ}C$. Thus hydrogen bonding is prior to hydrophobic interaction for Aigeok molecule.

• ETRI Journal
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• v.31 no.6
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• pp.660-666
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• 2009

We investigate the effects of interfacial dielectric layers (IDLs) on the electrical properties of top-gate In-Ga-Zn-oxide (IGZO) thin film transistors (TFTs) fabricated at low temperatures below $200^{\circ}C$, using a target composition of In:Ga:Zn = 2:1:2 (atomic ratio). Using four types of TFT structures combined with such dielectric materials as $Si_3N_4$ and $Al_2O_3$, the electrical properties are analyzed. After post-annealing at $200^{\circ}C$ for 1 hour in an $O_2$ ambient, the sub-threshold swing is improved in all TFT types, which indicates a reduction of the interfacial trap sites. During negative-bias stress tests on TFTs with a $Si_3N_4$ IDL, the degradation sources are closely related to unstable bond states, such as Si-based broken bonds and hydrogen-based bonds. From constant-current stress tests of $I_d$ = 3 ${\mu}A$, an IGZO-TFT with heat-treated $Si_3N_4$ IDL shows a good stability performance, which is attributed to the compensation effect of the original charge-injection and electron-trapping behavior.

• Journal of the Korean Institute of Gas
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• v.21 no.6
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• pp.30-38
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• 2017

Established in the 1960s, high pressure underground pipelines in Ulsan and Yeosu industrial estate are underground as toxic gas as well as combustible gas that is heavier than city gas and low combustion range. Especially, industrial pipelines occupy more than 20 years old pipes. In this way, the industrial estate pipeline was installed before the introduction of the supervision of construction, However, unlike the city gas pipeline, the pipeline is managed without any legal obligation. In this study, the safety management status of high pressure underground pipelines and urban gas underground pipelines in the industrial estate is analyzed and comparison of laws, extent of damage impact, using the pipe inspection model for pipe inspection of high pressure piping system with the existing piping system. it is intended to cuntribute to improving the safety of industrial estate are underground pipeline.

• Publications of The Korean Astronomical Society
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• v.30 no.2
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• pp.405-407
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• 2015

We describe a survey of quasars in the early universe, beyond z ~ 5, which is one of the main science goals of the Infrared Medium-deep Survey (IMS) conducted by the Center for the Exploration of the Origin of the Universe (CEOU). We use multi-wavelength archival data from SDSS, CFHTLS, UKIDSS, WISE, and SWIRE, which provide deep images over wide areas suitable for searching for high redshift quasars. In addition, we carried out a J-band imaging survey at the United Kingdom InfraRed Telescope with a depth of ~23 AB mag and survey area of ${\sim}120deg^2$, which makes IMS a suitable survey for finding faint, high redshift quasars at z ~ 7. In addition, for the quasar candidates at z ~ 5.5, we are conducting observations with the Camera for QUasars in EArly uNiverse (CQUEAN) on the 2.1m telescope at McDonald Observatory, which has a custom-designed filter set installed to enhance the efficiency of selecting robust quasar candidate samples in this redshift range. We used various color-color diagrams suitable for the specific redshift ranges, which can reduce contaminating sources such as M/L/T dwarfs, low redshift galaxies, and instrumental defects. The high redshift quasars we are confirming can provide us with clues to the growth of supermassive black holes since z ~ 7. By expanding the quasar sample at 5 < z < 7, the final stage of the hydrogen reionization in the intergalactic medium (IGM) can also be fully understood. Moreover, we can make useful constraints on the quasar luminosity function to study the contribution of quasars to the IGM reionization.

• Journal of Radiation Protection and Research
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• v.28 no.2
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• pp.127-135
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• 2003

The primary contributors to the total occupational radiation exposure in operating nuclear power plants are operation and maintenance activities doting refueling outages. The Advanced Power Reactor 1400 (APR1400) includes a number of design improvements and plans to utilize advanced maintenance methods and robotics to minimize the annual collective dose. The major radiation exposure reduction features implemented in APR1400 are a permanent refueling pool seal, quick opening transfer tube blind flange, improved hydrogen peroxide injection at shutdown, improved permanent steam generator work platforms, and more effective temporary shielding. The estimated average annual occupational radiation exposure for APR1400 based on the reference plant experience and an engineering judgment is determined to be in the order of 0.4 man-Sv, which is well within the design goal of 1 man-Sv. The basis of this average annual occupational radiation exposure estimation is an eighteen (18) month fuel cycle with maintenance performed to steam generators and reactor coolant pumps during refueling outage. The outage duration is assumed to be 28 days. The outage work is to be performed on a 24 hour per day basis, seven (7) days a week with overlapping twelve (12) hour work shifts. The occupational radiation exposure for APR1400 is also determined by an alternate method which consists of estimating radiation exposures expected for the major activities during the refueling outage. The major outage activities that cause the majority of the total radiation exposure during refueling outage such as fuel handling, reactor coolant pump maintenance, steam generator inspection and maintenance, reactor vessel head area maintenance, decontamination, and ICI & instrumentation maintenance activities are evaluated at a task level. The calculated value using this method is in close agreement with the value of 0.4 man-Sv, that has been determined based on the experience aid engineering judgement. Therefore, with the As Low As Reasonably Achievable (ALARA) advanced design features incorporated in the design, APR1400 design is to meet its design goal with sufficient margin, that is, more than a factor of two (2), if operated on art eighteen (18) month fuel cycle.

• Korean Chemical Engineering Research
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• v.48 no.2
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• pp.232-243
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• 2010

Gas hydrates are crystalline solids composed of water and gas molecules. Water molecules are linked through hydrogen bonding and create cavities(host lattice) that can capture a large variety of guest molecules under appropriate conditions, generally high pressure and low temperature. Recently, many researchers try to apply gas hydrates to industrial processes to capture greenhouse gases due to the facts that the process is eco-friendly and target gas molecules can be preferentially captured. In this paper, we introduced recent studies on $CO_2$ and $CO_2-N_2$ mixture hydrates to evaluate the feasibility of industrial application of gas hydrate technology to $CO_2$ capture process. Specifically, we put emphasis on the technical feasibility of $CO_2$ separation in steel industry using gas hydrate formation principles.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.9
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• pp.2251-2258
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• 2014

In this paper, an integrated control system for removable welfare equipment disinfection is implemented. The integrated control system consisted of a hydrogen peroxide vapor supply control circuit, a sterilization chamber control circuit using low vacuum, and a washing control circuit using microbubble. A Smart-phone based remote control and monitoring system is implemented to monitor the operating status and communication status for the integrated control system. An experiment is set up to evaluate the performance of the integrated control system. The experiment result confirms that signal and operation status can transmit and receive within the control circuit. The integrated control system shows good performance in terms of sensor interface, communication state and control. In future research, the proposed control system should deploy to an actual system for trial test to prove its performance.

• Electrical & Electronic Materials
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• v.9 no.1
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• pp.30-37
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• 1996

Previously, crystallization of a-Si:H films on glass substrates were limited to anneal temperature below 600.deg. C, over 10 hours to avoid glass shrinkage. Our study indicates that the crystallization is strongly influenced by anneal temperature and weakly affected by anneal duration time. Because of the high temperature process and nonconducting substrate requirements for poly-Si TFTs, the employed substrates were limited to quartz, sapphire, and oxidized Si wafer. We report on poly-Si TFT's using high temperature anneal on a Si:H/Mo structures. The metal Mo substrate was stable enough to allow 1000.deg. C anneal. A novel TFT fabrication was achieved by using part of the Mo substrate as drain and source ohmic contact electrode. The as-grown a-Si:H TFT was compared to anneal treated poly-Si TFT'S. Defect induced trap states of TFT's were examined using the thermally stimulated current (TSC) method. In some case, the poly-Si grain boundaries were passivated by hydrogen. A-SI:H and poly-Si TFT characteristics were investigated using an inverted staggered type TFT. The poly -Si films were achieved by various anneal techniques; isothermal, RTA, and excimer laser anneal. The TFT on as grown a-Si:H exhibited a low field effect mobility, transconductance, and high gate threshold voltage. Some films were annealed at temperatures from 200 to >$1000^{\circ}C$ The TFT on poly-Si showed an improved $I_on$$I_off$ ratio of $10_6$, reduced gate threshold voltage, and increased field effect mobility by three orders. Inverter operation was examined to verify logic circuit application using the poly Si TFTs.