• Transactions of Materials Processing
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• v.33 no.3
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• pp.185-192
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• 2024

This study examined how varying tempering temperatures affect the susceptibility of Cr-Mo low alloy steels to hydrogen embrittlement. A slow strain-rate test (SSRT) was carried out on the steels electrochemically pre-charged with hydrogen in order to examine the hydrogen embrittlement behavior. The results showed that the hydrogen embrittlement resistance of the Cr-Mo low alloy steels improved with increasing tempering temperature. Thermal desorption analysis (TDA) revealed that diffusible hydrogen content decreased with increasing tempering temperature, accompanied by a slight increase in the peak temperature. This decrease in hydrogen content was likely due to a reduction in dislocation density which served as reversible hydrogen trap sites. These findings underline the significant role of tempering temperature in enhancing the hydrogen embrittlement resistance of Cr-Mo low alloy steels.

• Journal of the Korean Society for Heat Treatment
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• v.26 no.1
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• pp.1-6
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• 2013

The B2-ordered NiAl has attracted much attention as one of the candidates as a next generation high temperature material, because it has a high melting temperature, a low specific gravity and an excellent high temperature oxidation resistance. However, the application of NiAl to structural materials needs the improvement of its brittleness at room temperature. The study was carried out on the relation between several properties of NiAl and some variation of Ni content within NiAl phase, which means deviations from the stoichiometric composition. The main results were as follows; (i) Good ductility was obtained at the testing temperature more than 1073 K irrespective of Ni content. (ii) Increasing Ni content offered preferable tensile properties. (iii) Every NiAl with varying Ni contents showed the superior oxidation resistance.

• Korean Journal of Materials Research
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• v.18 no.9
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• pp.497-502
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• 2008

BGA test sockets failed earlier than the expected life-time due to abnormal signal delay, shown especially at the low temperature ($-50^{\circ}C$). Analysis of failed sockets was conducted by EDX, AES, and XRD. A SnO layer contaminated with C was found to form on the surface of socket pins. The formation of SnO layer was attributed to the repeated Sn transfer from BGA balls to pin surface and instant oxidation of fresh Sn. As a result, contact resistance increased, inducing signal delay. Abnormal signal delay at the low temperature was attributed to the increasing resistivity of Sn oxide with decreasing temperature, as manifested by the resistance measurement of $SnO_2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.196-197
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• 2006

In this study, low temperature sintering multilayer piezoelectric transformer for DC-DC converter were manufactured using (PbCaSr)Ti(MnSb)$O_3$ ceramics and thin their electrical properties were investigated according to the vanation of frequency and load resistance. The voltage step-up ratio of multilayer piezoelectric transformer showed the maximum value m the vicinity of 1.3MHz and increased according to the increase of load resistance. When the output impedance coincided with the load resistance, the piezoelectric transformer showed the temperature rise of about $21^{\circ}C$ under the output power of 6W.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.352-356
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• 2007

The Ni/Cr/Al/Cu (51/41/4/4 wt%) thin films were deposited by using DC magnetron sputtering method for the application of the resistors having low TCR (temperature coefficients of resistance) and high resistivity from the former printed-results[3]. The TCR values measured on the as-deposited thin film resistors were less than ${\pm}10\;ppm/^{\circ}C$ and $-6{\sim}+1\;ppm/^{\circ}C$ after annealing and packaging process. The TCR values were $-3{\sim}1\;ppm/^{\circ}C$ (ratio of variation : about 0.02 %) and $-30{\sim}20\;ppm/^{\circ}C$ (ratio of variation : about $0.5{\sim}1\;%$) for the thermal cycling and PCT (pressure cooker test), respectively. It was confirmed that the reliability properties of the thin film resistor were good for electronic components.

• Journal of Ocean Engineering and Technology
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• v.14 no.1
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• pp.23-28
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• 2000

The fatigue crack growth behavior of the cold-rolled STS 304 steel developed for membrane material of LNG storage tank was examined experimentally at 293K, 153K and 111K. The fatigue crack growth rate(do/dN) tends to increase as the stress ratio (R) increases over the testing temperature when compared at the same stress intensity factor range($\Delta$K). The effect of R on do/dN is more explicit at low temperatures than at room temperature. The resistance of fatigue crack growth at low temperatures is higher compared with that at room temperature which is attributed to the extent of strain-induced martensitic transformation at the crack tip. The temperature dependence of fatigue crack growth resistance is gradually vanished with an increase in $\Delta$K which correlates with a decreasing fracture toughness with decreasing temperature. Fractographic examinations reveal that the differences of the fatigue crack growth characteristics between room and low temperature are mainly explained by the crack closure and the strengthening due to the martensitic transformation.

• Journal of the Korean Ceramic Society
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• v.28 no.6
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• pp.451-456
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• 1991

Electrical properties of 0.15 mol% Y2O3 doped semiconducting BaTiO3 ceramics have been investigated as functions of Pb5Ge3O11 contents (from 0.25 mol% to 2.5 mol%) and sintering temperatures (from 1150$^{\circ}C$ to 1300$^{\circ}C$). The low-temperature sintered BaTiO3 ceramics above 1150$^{\circ}C$ show increase of Curie temperature due to the diffusion of Pb+2 ions, and their PTCR effects decrease. As the sintering temperature increases the room temperature resistance decreases due to the growth of the grain, but the room temperature resistance increases with the increase of the Pb5Ge3O11 contents by the formation of thick insulating layers at the grain boundary.

• Journal of the Korean Ceramic Society
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• v.31 no.4
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• pp.381-388
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• 1994

A new process which co-fires the low-firing-substrate and copper conductor was studied to achieve good bond strength and low sheet resistance of conductor. Cupric oxide is used as the precursor of conductive material in the new method and the firing atmosphere of the new process is changed sequently in air H2N2. The addition of cupric oxide and variations of firing atmosphere permited complete binder-burnout in comparison with the conventional method and contributed to the improvement of resistance and bonding behaviors. The potimum conditions of this experiment to obtain the satisfactory resistance and bond strength are as follows (binder-burnout temperature in air; 55$0^{\circ}C$, reducing temperature in H2; 40$0^{\circ}C$ for 30 min, ratio of copper and cupric oxide; 60:40~30:70 wt%). The bonding mechanism between the substrate and metal was explained by metal diffusion layer in the interface and the bond strength mainly depended on the stress caused by the difference of shrinkage and thermal expansion coefficient between the substrate and metal.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.261-261
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• 1999

We observed leveling-off of the resistance in granular In/InO$_x$ thin films in the zero-temperature limit. The temperature T$_b$ at which the leveling-off appears gets larger as the sheet resistance R$_n$ increases. This is consistent with the concept that the leveling-off of the resistance is due to the dissipation of the bosonic phase and that the dissipation is enhanced as the resistance increases. The magnetic field dependence of the saturated resistance R$_b$ at low temperatures fits the modified square-root cusp-like form R$_b$/R$_n$=α exp[-b(B/B$_c$-1)$^{-1/2}$] for the magnetic field in the range B$_c$$_f$ where B$_c$ is the onset magnetic field of the resistance leveling-off. α and b are constants of order 1. For B>B$_f$ tansport properties are described by the theory of the fermi insulator. From the results, we attribute the leveling-off to the dissipative quantum tunneling of vortices, which supports the models predicting the vortex-motion-induced insulating phase related with the concept like"dirty boson" [1]l and "hose metal" [2].

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.263-266
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• 2002

Rises of temperature and resistance are observed in HTS tapes under over current condition. In this paper, we measured HTS tapes properties under low-over current condition with a little temperature rise as well as high-over current condition with a large temperature rise. According to the results of measurement, rises of temperature and resistance strongly depend on insulation level and duration of over current condition.