• Korean Journal of Materials Research
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• v.4 no.8
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• pp.855-860
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• 1994

Ta-silicide films in polycide structure were prepared by rapid thermal annealing of sputtered Ta film on poly-Si and doped poly-Si. Effects of phosphorus on Ta-silicide formation were investigated. Independent of the ion dose($1 \times 10^{13}\to 5 \times 10^{15}$/ions/$\textrm{cm}^2$), Ta-silicide phases were formed at $800^{\circ}C$ and stabilized above $1000^{\circ}C$. From the result of XRD at $800^{\circ}C$ and $900^{\circ}C$, however, it was indicated that the more the doping concentration the weaker the intensity of Ta-silicide phases. Furthermore, the observation of SEM revealed that the increase of the doping concentration retarded silicidation. As the temperature increased, the dopant effect was weakened gradually and almost disappeared at $1000^{\circ}C$. Therefore the variation of the ion dose from ($1 \times 10^{13}\to 5 \times 10^{15}$/ions/$\textrm{cm}^2$) did not greatly affect the formation of Ta-silicide at high temperatures but retarded slightly the silicidation at low temperatures.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.4
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• pp.169-175
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• 2014

Digital ink-jet printing system has many advantages such as fast and fine printing of various images, high efficiency and low cost process. Generally digital ink-jet printing requires ceramic pigments of cyan, magenta, yellow and black with thermal and glaze stability above $1000^{\circ}C$ for the application of porcelain product design. In this study, pink-red colored $CaO-SnO_2-Cr_2O_3-SiO_2$ pigment was synthesized using solid state reaction. The synthesis conditions of $Ca(Cr,Sn)SiO_5$ pigment such as annealing temperature, amount of mineralizer and non-stoichiometric composition were optimized. Crystal structure and morphology of the obtained $Ca(Cr,Sn)SiO_5$ pigment were analyzed using XRD, SEM, PSA, FT-IR and effect of Cr substitution on the pigment color was analyzed using Uv-vis. spectrophotometer and CIE $L^*a^*b^*$ measurement.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.129-129
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• 2016

Graphene, as a single layer of $sp^2$-bonded carbon atoms packed into a 2D honeycomb crystal lattice, has attracted much attention due to its outstanding properties. In order to synthesize high quality graphene, transition metals, such as nickel and copper, have been widely employed as catalysts, which needs transfer to desired substrates for various applications. However, the transfer steps are not only complicated but also inevitably induce defects, impurities, wrinkles, and cracks of graphene. Furthermore, the direct synthesis of graphene on dielectric surfaces has still been a premature field for practical applications. Therefore, cost effective and concise methods for transfer-free graphene are essentially required for commercialization. Here, we report a facile transfer-free graphene synthesis method through nickel and carbon co-deposited layer. In order to fabricate 100 nm thick NiC layer on the top of $SiO_2/Si$ substrates, DC reactive magnetron sputtering was performed at a gas pressure of 2 mTorr with various Ar : $CH_4$ gas flow ratio and the 200 W DC input power was applied to a Ni target at room temperature. Then, the sample was annealed under 200 sccm Ar flow and pressure of 1 Torr at $1000^{\circ}C$ for 4 min employing a rapid thermal annealing (RTA) equipment. During the RTA process, the carbon atoms diffused through the NiC layer and deposited on both sides of the NiC layer to form graphene upon cooling. The remained NiC layer was removed by using a 0.5 M $FeCl_3$ aqueous solution, and graphene was then directly obtained on $SiO_2/Si$ without any transfer process. In order to confirm the quality of resulted graphene layer, Raman spectroscopy was implemented. Raman mapping revealed that the resulted graphene was at high quality with low degree of $sp^3$-type structural defects. Additionally, sheet resistance and transmittance of the produced graphene were analyzed by a four-point probe method and UV-vis spectroscopy, respectively. This facile non-transfer process would consequently facilitate the future graphene research and industrial applications.

• Research in Plant Disease
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• v.26 no.3
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• pp.170-178
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• 2020

Most strawberry viruses exist relatively low titers in tissues, and strawberry tissues include high levels of contamination by polysaccharides and phenolic compounds. These traits make the efficiency of strawberry diagnosis difficult. In this study, we tested different commercially available kits and reagents to secure optimal RNA extraction methods to determine virus detection from strawberry leaves. Total RNA was isolated from leaves of strawberry mottle virus (SMoV)-infected strawberry cultivar 'Mihong'. The efficiency of total RNA for virus diagnosis was confirmed through SMoV detection by one-step or two-step reverse transcription and polymerase chain reaction (RT-PCR). Among those, the RNeasy plant RNA kit was best to isolate RNA and the isolated RNA was good enough for further applications. To ensure a reliable detection for strawberry viruses, synthetic diagnosis clones for major seven strawberry viruses such as strawberry mild yellow edge virus, SMoV, strawberry latent ring spot virus, strawberry crinkle virus, strawberry pallidosis associated virus, strawberry vein banding virus and strawberry necrotic spot virus have been constructed. Based on the synthetic genes in each clone, primer sets for seven strawberry viruses were designed and tested an RT-PCR condition through a simultaneous application of the same annealing temperature that allowed to achieve an efficient and convenient diagnosis.

• Korean Journal of Materials Research
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• v.21 no.2
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• pp.111-114
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• 2011

As a growth-template of ZnO nanorods (NR), a hexagonal $\beta-Ni(OH)_2$ nanosheet (NS) was synthesized with the low temperature hydrothermal process and its microstructure was investigated using a high resolution scanning electron microscope and transmission electron microscope. Zinc nitrate hexahydrate was hydrolyzed by hexamethylenetetramine with the same mole ratio and various temperatures, growth times and total concentrations. The optimum hydrothermal processing condition for the best crystallinity of hexagonal $\beta-Ni(OH)_2$ NS was determined to be with 3.5 mM at $95^{\circ}C$ for 2 h. The prepared $Ni(OH)_2$ NSs were two dimensionally arrayed on a substrate using an air-water interface tapping method, and the quality of the array was evaluated using an X-ray diffractometer. Because of the similarity of the lattice parameter of the (0001) plane between ZnO (wurzite a = 0.325 nm, c = 0.521 nm) and hexagonal $\beta-Ni(OH)_2$ (brucite a = 0.313 nm, c = 0.461 nm) on the synthesized hexagonal $\beta-Ni(OH)_2$ NS, ZnO NRs were successfully grown without seeds. At 35 mM of divalent Zn ion, the entire hexagonal $\beta-Ni(OH)_2$ NSs were covered with ZnO NRs, and this result implies the possibility that ZnO NR can be grown epitaxially on hexagonal $\beta-Ni(OH)_2$ NS by a soluble process. After the thermal annealing process, $\beta-Ni(OH)_2$ changed into NiO, which has the property of a p-type semiconductor, and then ZnO and NiO formed a p-n junction for a large area light emitting diode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.398-402
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• 2012

Synthesis of $Li_2MnSiO_4$ was attempted by the conventional solid-state reaction method, and the phase formation behavior according to the change of the calcination condition was investigated. When the mixture of the three source materials, $Li_2O$, MnO and $SiO_2$ powders, were used for calcination in air, it was difficult to develop the $Li_2MnSiO_4$ phase because the oxidation number of $Mn^{2+}$ could not be maintained. Therefore, two-step calcination was applied: $Li_2SiO_3$ was made from $Li_2O$ and $SiO_2$ at the first step, and $Li_2MnSiO_4$ was synthesized from $Li_2SiO_3$ and MnO at the second step. It was easy to make $Li_2MnSiO_3$ from $Li_2O$ and $SiO_2$. $Li_2MnSiO_4$ single phase was developed by the calcination at $900^{\circ}C$ for 24 hr in Ar atmosphere as the oxidation of $Mn^{2+}$ was prevented. However, the $Li_2MnSiO_4$ was ${\gamma}-Li_2MnSiO_4$, one of the polymorph of $Li_2MnSiO_4$, which could not be used as the cathode materials in Li-ion batteries. By applying the additional low temperature annealing at $400^{\circ}C$, the single phase ${\beta}-Li_2MnSiO_4$ powder was synthesized successfully through the phase transition from ${\gamma}$ to ${\beta}$ phase.

• Journal of the Korean Magnetics Society
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• v.14 no.1
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• pp.7-12
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• 2004

The annealing-temperature dependence of magnetic properties in compressed powder cores being composed of ball-milled F $e_{73.5}$C $u_1$N $b_3$S $i_{15.5}$ $B_{7}$ alloy powders (size 250∼850${\mu}{\textrm}{m}$) and 5 wt% of ceramic insulators has been investigated. When annealed at 5$50^{\circ}C$ for 1 h and so transformed to $\alpha$-Fe phase nanocrystalline structure with the grain size of 11 nm (electrical resistivity : 110 $\mu$Ω$.$cm), the highest effective permeability of 125 and quality factor of 53 were obtained, and the permeability persisted up to about 500 KHz. Further the core loss measured at the frequency of 50 KHz and the induction amplitude of 0.1 T was very low (230 mW/㎤). However the dc bias characteristics was not satisfactory as compared to that of conventional powder core materials(MPP, Sendust etc.). The inferior dc bias property of F $e_{73.5}$C $u_1$N $b_3$S $i_{15.5}$ $B_{7}$ alloy powder cores was attributed to the fact that the size of powder was too large for obtaining the same permeability with that of conventional materials.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.10
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• pp.111-121
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• 2012

In this paper, a poly-Si thin film transistor with ${\sim}0.5{\mu}m$ gate length was fabricated and its electrical characteristics are optimized. From the results, it was verified that making active region with larger grain size using low temperature annealing is an efficient way to enhance the subthreshold swing, drain-induced barrier lowering and on-current characteristics. A SONOS flash memory was fabricated using this poly-Si channel process and its performances are analyzed. It was necessary to optimize O/N/O thickness for the reduction of electron back tunneling and the enhancement of its memory operation. The optimized device showed 2.24 V of threshold voltage memory windows which coincided with a well operating flash memory.

• Korean Journal of Materials Research
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• v.12 no.12
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• pp.962-966
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• 2002

The $SrBi_2$$Nb_2$$O_{9}$ (SBN) thin films were deposited with $SrNb_2$$O_{6}$ / (SNO) and $Bi_2$$O_3$ targets by co-sputtering method. For the growth of SBN thin films, we adopted the various power ratios of two targets; the power ratios of the SNO target to $Bi_2$$O_3$ target were 100 W : 20 W, 100 W : 25 W, and 100 W : 30 W during sputtering the SBN films. We found that the electrical properties of SBN films were greatly dependent on Bi content in films. The $Bi_2$Pt and $Bi_2$$O_3$ phase as second phases occurred at the films with excess Bi content greater than 2.4, resulting in poor ferroelectric properties. The best growth condition of the SBN films was obtained at the power ratio of 100 W : 25 W for the two targets. At this condition, the crystallinity and electrical properties of the films were improved at even low annealing temperature as $700^{\circ}C$ for 1h in oxygen ambient and the Sr, Bi and Nb component in the SBN films were about 0.9, 2.4, and 1.8 respectively. From the P-E and I-V curves for the specimen, the remnant polarization value ($2P_{r}$) of the SBN films was obtained about 6 $\mu$C/c $m^2$ at 250 kV/cm and the leakage current density of this thin film was $2.45$\times$10^{-7}$ $A/cm^2$ at an applied voltage of 3 V.V.

• Korean Journal of Microbiology
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• v.44 no.4
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• pp.293-298
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• 2008

HCV is transmitted via various plasma derived products. Current methods to detect hepatitis C virus (HCV) are based on its antibody detection in the donated blood and plasma. Viral contamination can potentially escape such detection during the window period of infection, when no antibody is present or the level of antibody is too low to detect. It is trying to application of nucleic acid amplification tests (NAT) for the direct detection of HCV. The objective of this study was to develop a reliable NAT for the HCV RNA detection from plasma-derived products. The most useful primers was selected for NAT among 5 sets of primers. We have also found that QIAamp viral RNA isolation kit was the most efficient for HCV RNA isolation. The highest sensitivity and specificity was appeared in $48^{\circ}C$ annealing temperature and 30 pmol of primers. With a spiking of HCV to albumin, immunoglobulins and coagulation factors, NAT can detect up to 100 IU/ml. Meanwhile, COBAS amplicor HCV 2.0 afforded a lower sensitivity in high concentrated intramuscular immunoglobulins to below 500 IU/ml. Our results suggested that NAT appears to be a highly sensitive and specific method for HCV RNA detection in plasma-derived products.