• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.403-403
• /
• 2010

The Pt-Ni alloy is an electro-catalyst of interest in the low temperature direct methanol fuel cells(DMFCs). It has been already reported that the Pt-Ni alloy catalysts may even have enhanced activity compared to pure platinum catalyst, depending on how the surfaces are prepared. The order-disorder transition in bimetallic alloy such as $\beta$-CuZn, Cu3Au, and CuAu have been investigated greatly by x-ray diffraction. After annealing the bimetallic alloy, the crystal structure changes as observed in the order-disorder transition of Cu3Au which changes from the face centered cubic to a simple cubic structure. Pt-Ni bimetallic alloy has been already reported to have the face centered cubic structure. However, in nano-scale Pt-Ni bimetallic alloy crystals the crystal structures changes to a simple cubic structure. In this experiment, we have studied the order-disorder transition in Pt-Ni bimetallic nanocrystals. Pt/Ni thin films were deposited on sapphire(0001) substrates by e-beam evaporator and then Pt-Ni alloy were formed by RTA at 500, 600, and $700^{\circ}C$ in a vacuum environment and Pt-Ni nano particles were formed by RTA at $1059^{\circ}C$ in a vacuum environment. We measured the structure of Pt-Ni bimetallic alloy films using synchrotron x-ray diffraction and SEM.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.453-453
• /
• 2010

In this study, zinc germanate ($Zn_2GeO_4$) thin films has been synthesized by using radio frequency magnetron sputtering and the divalent manganese-activated luminescence was characterized. X-ray diffraction patterns of the as-deposited $Zn_2GeO_4$:Mn films showed only a broad feature, indicative of an amorphous structure. Scanning electron microscopy images revealed that the as-deposited $Zn_2GeO_4$:Mn has a smooth surface morphology. The $Zn_2GeO_4$:Mn films were found to be crystallized by annealing in air ambient at temperatures as low as $700^{\circ}C$. The annealed $Zn_2GeO_4$:Mn possessed a rhombohedral polycrystalline structure. The broad-band photoluminescent emission spectrum from 470 to 650nm was obtained at room temperature from the $Zn_2GeO_4$:Mn films. The emission peak was centered at around 535nm in the green range, which originates from the intrashell transition of manganese $3d^5$ electrons from $^4T_1$ excited-state level to the $^6A_1$ ground state. The PL emission spectrum had an asymmetric line shape, which results from the $^3d_5$ electron transitions of divalent manganese ions located at different sites of the zinc germanate host crystal lattice. Electroluminescent devices were fabricated using $Zn_2GeO_4$:Mn as an emission layer. The fabricated devices showed a green EL emission similar to the PL emission. The CIE chromaticity color coordinates of the EL emission were determined to be x=0.308 and y=0.657.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
• /
• pp.75.2-75.2
• /
• 2013

Atomic layer deposition (ALD), utilizing self-limiting surface reactions, could offer promising perspectives for future efficient energy conversion devices. The capabilities of ALD for surface/interface modification and construction of novel architectures with sub-nanometer precision and exceptional conformality over high aspect ratio make it more valuable than any other deposition methods in nanoscale science and technology. In the context, a variety of researches on fabrication of active materials for energy conversion applications by ALD are emerging. Among those materials, one-dimensional nanotubular titanium dioxide, providing not only high specific surface area but also efficient carrier transport pathway, is a class of the most intensively explored materials for energy conversion systems, such as photovoltaic cells and photo/electrochemical devices. The monodisperse, stoichiometric, anatase, TiO2 nanotubes with smooth surface morphology and controlled wall thickness were fabricated via low-temperature template-directed ALD followed by subsequent annealing. The ALD-grown, anatase, TiO2 nanotubes in alumina template show unusual crystal growth behavior which allows to form remarkably large grains along axial direction over certain wall thickness. We also fabricated dye-sensitized solar cells (DSCs) introducing our anatase TiO2 nanotubes as photoanodes, and studied the effect of blocking layer, TiO2 thin films formed by ALD, on overall device efficiency. The photon convertsion efficiency ~7% were measured for our TiO2 nanotubebased DSCs with blocking layers, which is ~1% higher than ones without blocking layer. We also performed open circuit voltage decay measurement to estimate recombination rate in our cells, which is 3 times longer than conventional nanoparticulate photoanodes. The high efficiency of our ALD-grown, anatase, TiO2 nanotube-based DSCs may be attributed to both enhanced charge transport property of our TiO2 nanotubes photoanode and the suppression of recombination at the interface between transparent conducting electrode and iodine electrolytes by blocking layer.

• 한국재료학회지
• /
• 제19권1호
• /
• pp.33-36
• /
• 2009

Inorganic-organic composite thin-film-transistors (TFTs) of ZnO nanowire/Poly(3-hexylthiophene) (P3HT) were investigated by changing the nanowire densities inside the composites. Crystalline ZnO nanowires were synthesized via an aqueous solution method at a low temperature, and the nanowire densities inside the composites were controlled by changing the ultrasonifiaction time. The channel layers were prepared with composites by spin-coating at 2000 rpm, which was followed by annealing in a vacuum at $100^{\circ}C$ for 10 hours. Au/inorganic-organic composite layer/$SiO_2$ structures were fabricated and the mobility, $I_{on}/I_{off}$ ratio, and threshold voltage were then measured to analyze the electrical characteristics of the channel layer. Compared with a P3HT TFT, the electrical properties of TFT were found to be improved after increasing the nanowire density inside the composites. The mobility of the P3HT TFT was approximately $10^{-4}cm^2/V{\cdot}s$. However, the mobility of the ZnO nanowire/P3HT composite TFT was increased by two orders compared to that of the P3HT TFT. In terms of the $I_{on}/I_{off}$ ratio, the composite device showed a two-fold increase compared to that of the P3HT TFT.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2010년도 제39회 하계학술대회 초록집
• /
• pp.145-145
• /
• 2010

In this paper, we report that the effects of hydrogen doping on the electrical and optical properties of typical transparent conducting oxide films such as ZnO and $SnO_2$ prepared by magnetron sputtering. Recently, density functional theory (DFT) calculations have shown strong evidence that hydrogen acts as a source of n-type conductivity in ZnO. In this work, the beneficial effect of hydrogen incorporation on Ga-doped ZnO thin films was demonstrated. It was found that hydrogen doping results a noticeable improvement of the conductivity mainly due to the increases in carrier concentration. Extent of the improvement was found to be quite dependent on the deposition temperature. A low resistivity of $4.0{\times}10^{-4}\;{\Omega}{\cdot}cm$ was obtained for the film grown at $160^{\circ}C$ with $H_2$ 10% in sputtering gas. However, the beneficial effect of hydrogen doping was not observed for the films deposited at $270^{\circ}C$. Variations of the electrical transport properties upon vacuum annealing showed that the difference is attributed to the thermal stability of interstitial hydrogen atoms in the films. Theoretical calculations also suggested that hydrogen forms a shallow-donor state in $SnO_2$, even though no experimental determination has yet been performed. We prepared undoped $SnO_2$ thin films by RF magnetron sputtering under various hydrogen contents in sputtering ambient and then exposed them to H-plasma. Our results clearly showed that the hydrogen incorporation in $SnO_2$ leads to the increase in carrier concentration. Our experimental observation supports the fact that hydrogen acting as a shallow donor seems to be a general feature of the TCOs.

• 마이크로전자및패키징학회지
• /
• 제26권3호
• /
• pp.59-62
• /
• 2019

본 논문은 용액공정용 불소 도핑된 인듈 갈륨 징크 산화물 반도체를 연구하였으며, 박막 트랜지스터 적용 가능성을 확인하였다. 용액형 산화물 반도체를 형성하기 위해, 금속염 전구체 기반 용액을 제조하였으며, 추가적인 불소 도핑을 유도하기 위해 화학적 첨가제로서 암모늄 플로라이드를 이용하였다. 열처리 온도 및 불소 도핑양에 따른 전기적 물성을 고찰함으로서, 300도 저온 열처리를 통해 제조된 산화물 반도체층의 전기적 특성을 향상시켰다. 20 mol% 불소를 도핑하는 경우, $1.2cm^2/V{\cdot}sec$의 이동도 및 $7{\times}10^6$의 점멸비 특성이 발현 가능함을 확인하였다.

• Corrosion Science and Technology
• /
• 제20권4호
• /
• pp.183-188
• /
• 2021

The increasing demand for energy storage in mobile electronic devices and electric vehicles has emphasized the importance of electrochemical energy storage devices such as Li-ion batteries (LIBs) and supercapacitors. For reversible Li storage, alternative anode materials are actively being developed. In this study, we designed and fabricated an Nb₂O₅-Li₃VO₄ composite for use as an anode material in LIBs and hybrid supercapacitors. Nb₂O₅ powders were dissolved into a solution and the precursors were precipitated onto Li₃VO₄ through a simple, low-temperature hydrothermal reaction. The annealing process yielded an Nb₂O₅-Li₃VO₄ composite that was characterized by X-ray diffraction, electron microscopy, and X-ray photoelectron spectroscopy. Electrochemical tests revealed that the Nb₂O₅-Li₃VO₄ composite electrode demonstrated increased capacities of approximately 350 and 140 mAh g^-1 at 0.1 and 5 C, respectively, were maintained up to 1000 cycles. The reversible capacity and rate capability of the composite electrode were enhanced compared to those of pure Nb₂O₅-based electrodes. These results can be attributed to the microstructure design of the synthesized composite material.

• 한국물환경학회지
• /
• 제27권1호
• /
• pp.98-103
• /
• 2011

Photocatalysis using UV light and catalysts is an attractive low temperature and non-energy- intensive method for remediation of a wide range of chemical contaminants like chloroform (CF). Recently development of environmental friendly and sustainable catalytic systems is needed before such catalysts can be routinely applied to large-scale remediation or drinking water treatment. Titanium dioxide is a candidate material, since it is stable, highly reactive, and inexpensive. Diatoms are photosynthetic, single-celled algae that make a microscale silica shell with nano scale features. These diatoms have an ability to biologically fabricate $TiO_2$ nanoparticles into this shell in a process that parallels nanoscale silica mineralization. We cultivated diatoms, metabolically deposited titanium into the shell by using a two-stage photobioreactor and used this biogenic $TiO_2$ to this study. In this study we evaluated how effectively biogenic $TiO_2$ nanoparticles transform CF compared with chemically-synthesized $TiO_2$ nanoparticlesthe and effect of pretreatment of diatom-produced $TiO_2$ nanoparticles on photocatalytic transformation of CF. The rate of CF transformation by diatom-$TiO_2$ particles is a factor of 3 slower than chemically-synthesized one and chloride ion production was also co-related with CF transformation, and 79~91% of CF mineralization was observed in two $TiO_2$ particles. And the period of sonication and mass transfer due to particle size, evaluated by difference of oxygen tention does not affect on the CF transformation. Based on the XRD analysis we conclude that slower CF transformation by diatom-$TiO_2$ might be due to incomplete annealing to the anatase form.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
• /
• pp.20-20
• /
• 2003

We developed 30 ㎽-AlInGaN based violet laser diodes. The fabrication procedures of the laser diodes are described as follows. Firstly, GaN layers having very low defect density were grown on sapphire substrates by lateral epitaxial overgrowth method. The typical dislocation density was about 1-3$\times$10$^{6}$ /$\textrm{cm}^2$ at the wing region. Secondly, AlInGaN laser structures were grown on LEO-GaN/sapphire substrates by MOCVD. UV activation method, instead of conventional annealing, was conducted to achieve good p-type conduction. Thirdly, ridge stripe laser structures were fabricated. The cavity mirrors were formed by cleaving method. Three pairs of SiO$_2$ and TiO$_2$ layers were deposited on the rear facet for mirror coating. Lastly, laser diode chips were mounted on AlN submount wafers by epi-down bonding method. The lifetime of the laser diodes was over 10,000 hrs at room temperature under automatic power controlled condition. We expect the performance of the LDs to be improved by the optimization of the growth and fabrication process. The detailed characteristics and important issues of the laser diodes will be discussed at the conference.

• 한국분말재료학회지
• /
• 제30권5호
• /
• pp.431-435
• /
• 2023

An irradiation hardening of Inconel 718 produced by selective laser melting (SLM) was studied based on the microstructural observation and mechanical behavior. Ion irradiation for emulating neutron irradiation has been proposed owing to advantages such as low radiation emission and short experimental periods. To prevent softening caused by the dissolution of γ' and γ" precipitates due to irradiation, only solution annealing (SA) was performed. SLM SA Inconel 718 specimen was ion irradiated to demonstrate the difference in microstructure and mechanical properties between the irradiated and non-irradiated specimens. After exposing specimens to Fe³⁺ ions irradiation up to 100 dpa (displacement per atom) at an ambient temperature, the hardness of irradiated specimens was measured by nano-indentation as a function of depth. The depth distribution profile of Fe³⁺ and dpa were calculated by the Monte Carlo SRIM (Stopping and Range of Ions in Matter)-2013 code under the assumption of the displacement threshold energy of 40 eV. A transmission electron microscope was utilized to observe the formation of irradiation defects such as dislocation loops. This study reveals that the Frank partial dislocation loops induce irradiation hardening of SLM SA Inconel 718 specimens.