• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.453-453
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• 2010

In this study, zinc germanate ($Zn_2GeO_4$) thin films has been synthesized by using radio frequency magnetron sputtering and the divalent manganese-activated luminescence was characterized. X-ray diffraction patterns of the as-deposited $Zn_2GeO_4$:Mn films showed only a broad feature, indicative of an amorphous structure. Scanning electron microscopy images revealed that the as-deposited $Zn_2GeO_4$:Mn has a smooth surface morphology. The $Zn_2GeO_4$:Mn films were found to be crystallized by annealing in air ambient at temperatures as low as $700^{\circ}C$. The annealed $Zn_2GeO_4$:Mn possessed a rhombohedral polycrystalline structure. The broad-band photoluminescent emission spectrum from 470 to 650nm was obtained at room temperature from the $Zn_2GeO_4$:Mn films. The emission peak was centered at around 535nm in the green range, which originates from the intrashell transition of manganese $3d^5$ electrons from $^4T_1$ excited-state level to the $^6A_1$ ground state. The PL emission spectrum had an asymmetric line shape, which results from the $^3d_5$ electron transitions of divalent manganese ions located at different sites of the zinc germanate host crystal lattice. Electroluminescent devices were fabricated using $Zn_2GeO_4$:Mn as an emission layer. The fabricated devices showed a green EL emission similar to the PL emission. The CIE chromaticity color coordinates of the EL emission were determined to be x=0.308 and y=0.657.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.75.2-75.2
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• 2013

Atomic layer deposition (ALD), utilizing self-limiting surface reactions, could offer promising perspectives for future efficient energy conversion devices. The capabilities of ALD for surface/interface modification and construction of novel architectures with sub-nanometer precision and exceptional conformality over high aspect ratio make it more valuable than any other deposition methods in nanoscale science and technology. In the context, a variety of researches on fabrication of active materials for energy conversion applications by ALD are emerging. Among those materials, one-dimensional nanotubular titanium dioxide, providing not only high specific surface area but also efficient carrier transport pathway, is a class of the most intensively explored materials for energy conversion systems, such as photovoltaic cells and photo/electrochemical devices. The monodisperse, stoichiometric, anatase, TiO2 nanotubes with smooth surface morphology and controlled wall thickness were fabricated via low-temperature template-directed ALD followed by subsequent annealing. The ALD-grown, anatase, TiO2 nanotubes in alumina template show unusual crystal growth behavior which allows to form remarkably large grains along axial direction over certain wall thickness. We also fabricated dye-sensitized solar cells (DSCs) introducing our anatase TiO2 nanotubes as photoanodes, and studied the effect of blocking layer, TiO2 thin films formed by ALD, on overall device efficiency. The photon convertsion efficiency ~7% were measured for our TiO2 nanotubebased DSCs with blocking layers, which is ~1% higher than ones without blocking layer. We also performed open circuit voltage decay measurement to estimate recombination rate in our cells, which is 3 times longer than conventional nanoparticulate photoanodes. The high efficiency of our ALD-grown, anatase, TiO2 nanotube-based DSCs may be attributed to both enhanced charge transport property of our TiO2 nanotubes photoanode and the suppression of recombination at the interface between transparent conducting electrode and iodine electrolytes by blocking layer.

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.33-36
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• 2009

Inorganic-organic composite thin-film-transistors (TFTs) of ZnO nanowire/Poly(3-hexylthiophene) (P3HT) were investigated by changing the nanowire densities inside the composites. Crystalline ZnO nanowires were synthesized via an aqueous solution method at a low temperature, and the nanowire densities inside the composites were controlled by changing the ultrasonifiaction time. The channel layers were prepared with composites by spin-coating at 2000 rpm, which was followed by annealing in a vacuum at $100^{\circ}C$ for 10 hours. Au/inorganic-organic composite layer/$SiO_2$ structures were fabricated and the mobility, $I_{on}/I_{off}$ ratio, and threshold voltage were then measured to analyze the electrical characteristics of the channel layer. Compared with a P3HT TFT, the electrical properties of TFT were found to be improved after increasing the nanowire density inside the composites. The mobility of the P3HT TFT was approximately $10^{-4}cm^2/V{\cdot}s$. However, the mobility of the ZnO nanowire/P3HT composite TFT was increased by two orders compared to that of the P3HT TFT. In terms of the $I_{on}/I_{off}$ ratio, the composite device showed a two-fold increase compared to that of the P3HT TFT.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.145-145
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• 2010

In this paper, we report that the effects of hydrogen doping on the electrical and optical properties of typical transparent conducting oxide films such as ZnO and $SnO_2$ prepared by magnetron sputtering. Recently, density functional theory (DFT) calculations have shown strong evidence that hydrogen acts as a source of n-type conductivity in ZnO. In this work, the beneficial effect of hydrogen incorporation on Ga-doped ZnO thin films was demonstrated. It was found that hydrogen doping results a noticeable improvement of the conductivity mainly due to the increases in carrier concentration. Extent of the improvement was found to be quite dependent on the deposition temperature. A low resistivity of $4.0{\times}10^{-4}\;{\Omega}{\cdot}cm$ was obtained for the film grown at $160^{\circ}C$ with $H_2$ 10% in sputtering gas. However, the beneficial effect of hydrogen doping was not observed for the films deposited at $270^{\circ}C$. Variations of the electrical transport properties upon vacuum annealing showed that the difference is attributed to the thermal stability of interstitial hydrogen atoms in the films. Theoretical calculations also suggested that hydrogen forms a shallow-donor state in $SnO_2$, even though no experimental determination has yet been performed. We prepared undoped $SnO_2$ thin films by RF magnetron sputtering under various hydrogen contents in sputtering ambient and then exposed them to H-plasma. Our results clearly showed that the hydrogen incorporation in $SnO_2$ leads to the increase in carrier concentration. Our experimental observation supports the fact that hydrogen acting as a shallow donor seems to be a general feature of the TCOs.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.3
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• pp.59-62
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• 2019

In this study, we have developed solution-processed, F-doped In-Ga-Zn-O semiconductors and investigated their applications to thin-film transistors. In order for forming the appropriate channel layer, precursor solutions were formulated by dissolving the metal salts in the designated solvent and an additive, ammonium fluoride, was incorporated additionally as a chemical modifier. We have studied thermal and chemical contributions by a thermal annealing and an incorporation of chemical modifier, from which it was revealed that electrical performances of the thin-film transistors comprising the channel layer annealed at a low temperature can be improved significantly along with an addition of ammonium fluoride. As a result, when the 20 mol% fluorine was incorporated into the semiconductor layer, electrical characteristics were accomplished with a field-effect mobility of $1.2cm^2/V{\cdot}sec$ and an $I_{on}/_{off}$ of $7{\times}10^6$.

• Corrosion Science and Technology
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• v.20 no.4
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• pp.183-188
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• 2021

The increasing demand for energy storage in mobile electronic devices and electric vehicles has emphasized the importance of electrochemical energy storage devices such as Li-ion batteries (LIBs) and supercapacitors. For reversible Li storage, alternative anode materials are actively being developed. In this study, we designed and fabricated an Nb₂O₅-Li₃VO₄ composite for use as an anode material in LIBs and hybrid supercapacitors. Nb₂O₅ powders were dissolved into a solution and the precursors were precipitated onto Li₃VO₄ through a simple, low-temperature hydrothermal reaction. The annealing process yielded an Nb₂O₅-Li₃VO₄ composite that was characterized by X-ray diffraction, electron microscopy, and X-ray photoelectron spectroscopy. Electrochemical tests revealed that the Nb₂O₅-Li₃VO₄ composite electrode demonstrated increased capacities of approximately 350 and 140 mAh g^-1 at 0.1 and 5 C, respectively, were maintained up to 1000 cycles. The reversible capacity and rate capability of the composite electrode were enhanced compared to those of pure Nb₂O₅-based electrodes. These results can be attributed to the microstructure design of the synthesized composite material.

• Journal of Korean Society on Water Environment
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• v.27 no.1
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• pp.98-103
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• 2011

Photocatalysis using UV light and catalysts is an attractive low temperature and non-energy- intensive method for remediation of a wide range of chemical contaminants like chloroform (CF). Recently development of environmental friendly and sustainable catalytic systems is needed before such catalysts can be routinely applied to large-scale remediation or drinking water treatment. Titanium dioxide is a candidate material, since it is stable, highly reactive, and inexpensive. Diatoms are photosynthetic, single-celled algae that make a microscale silica shell with nano scale features. These diatoms have an ability to biologically fabricate $TiO_2$ nanoparticles into this shell in a process that parallels nanoscale silica mineralization. We cultivated diatoms, metabolically deposited titanium into the shell by using a two-stage photobioreactor and used this biogenic $TiO_2$ to this study. In this study we evaluated how effectively biogenic $TiO_2$ nanoparticles transform CF compared with chemically-synthesized $TiO_2$ nanoparticlesthe and effect of pretreatment of diatom-produced $TiO_2$ nanoparticles on photocatalytic transformation of CF. The rate of CF transformation by diatom-$TiO_2$ particles is a factor of 3 slower than chemically-synthesized one and chloride ion production was also co-related with CF transformation, and 79~91% of CF mineralization was observed in two $TiO_2$ particles. And the period of sonication and mass transfer due to particle size, evaluated by difference of oxygen tention does not affect on the CF transformation. Based on the XRD analysis we conclude that slower CF transformation by diatom-$TiO_2$ might be due to incomplete annealing to the anatase form.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.20-20
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• 2003

We developed 30 ㎽-AlInGaN based violet laser diodes. The fabrication procedures of the laser diodes are described as follows. Firstly, GaN layers having very low defect density were grown on sapphire substrates by lateral epitaxial overgrowth method. The typical dislocation density was about 1-3$\times$10$^{6}$ /$\textrm{cm}^2$ at the wing region. Secondly, AlInGaN laser structures were grown on LEO-GaN/sapphire substrates by MOCVD. UV activation method, instead of conventional annealing, was conducted to achieve good p-type conduction. Thirdly, ridge stripe laser structures were fabricated. The cavity mirrors were formed by cleaving method. Three pairs of SiO$_2$ and TiO$_2$ layers were deposited on the rear facet for mirror coating. Lastly, laser diode chips were mounted on AlN submount wafers by epi-down bonding method. The lifetime of the laser diodes was over 10,000 hrs at room temperature under automatic power controlled condition. We expect the performance of the LDs to be improved by the optimization of the growth and fabrication process. The detailed characteristics and important issues of the laser diodes will be discussed at the conference.

• Journal of Powder Materials
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• v.30 no.5
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• pp.431-435
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• 2023

An irradiation hardening of Inconel 718 produced by selective laser melting (SLM) was studied based on the microstructural observation and mechanical behavior. Ion irradiation for emulating neutron irradiation has been proposed owing to advantages such as low radiation emission and short experimental periods. To prevent softening caused by the dissolution of γ' and γ" precipitates due to irradiation, only solution annealing (SA) was performed. SLM SA Inconel 718 specimen was ion irradiated to demonstrate the difference in microstructure and mechanical properties between the irradiated and non-irradiated specimens. After exposing specimens to Fe³⁺ ions irradiation up to 100 dpa (displacement per atom) at an ambient temperature, the hardness of irradiated specimens was measured by nano-indentation as a function of depth. The depth distribution profile of Fe³⁺ and dpa were calculated by the Monte Carlo SRIM (Stopping and Range of Ions in Matter)-2013 code under the assumption of the displacement threshold energy of 40 eV. A transmission electron microscope was utilized to observe the formation of irradiation defects such as dislocation loops. This study reveals that the Frank partial dislocation loops induce irradiation hardening of SLM SA Inconel 718 specimens.

• Journal of the Korean Magnetics Society
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• v.1 no.1
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• pp.17-24
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• 1991

Laves phases of $NdFe_2$, $Nd{(Fe_{0.5})}_2$, $SmCo_2$ and $Sm{(Fe_{0.5}Co_{0.5})}_2$ stoichiometry were prepared using a rapid solidification technology. Low temperature magnetic properties show ferromagnetic behaviors for the $Nd{(Fe_{0.5}Co_{0.5})}_2$, $SmCo_2$ and $Sm{(Fe_{0.5}Co_{0.5})}_2$Nd(Feo,Coo,) Laves compounds while a sort of spin reorientation has been suggested for the supposed composition of $NdFe_2$ alloy. This rapidly solidified $NdFe_2$ alloy is believed to consist of metastable rhombohedral $NdFe_7$ phase plus fine particles of Nd-rich phase. Some evidence of phase transition from the mixture of unstable $NdFe_7$ compound plus Nd-rich to $Nd_2Fe_{17}$ plus Fe-Nd-O phase was obtained after annealing the $NdFe_2$, alloy. The pseudo-binary Laves compound, $Sm{(Fe_{0.5}Co_{0.5})}_2$ exhibits a high coercivityof 4 kOe at room temperature with Curie temperature of $400^{\circ}C$ while the $Nd{(Fe_{0.5}Co_{0.5})}_2$ compound shows a magnetic moment of $2.8\;{\mu}_B/f.u.$.