• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.371-374
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• 2004

In this paper, Ni Germane-silicide formed on undoped $Si_{0.8}Ge_{0.2}$ as well as source/drain dopants doped $Si_{0.8}Ge_{0.2}$ was characterized by the four-point probe for sheet resistance. x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and field emission scanning electron microscope (FESEM). Low resistive NiSiGe is formed by one step RTP (Rapid thermal processing) with temperature range at $500{\~}700^{\circ}C$. To enhance the thermal stability of Ni Germane-silicide, Ni/Co/TiN structure with different Co concentration were studied in this work. Low sheet resistance was obtained by Ni/Co/TiN structure with high Co concentration using 2-step RTP and it almost keeps the same low sheet resistance even after furnace annealing at $650^{\circ}C$ for 30 min.

• Current Photovoltaic Research
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• v.5 no.1
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• pp.15-19
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• 2017

The fossil fuel power consumption generates $CO_2$, which causes the problems such as global warming. Also, the increase in energy consumption has accelerated the depletion of the fossil fuels, and renewable energy is attracting attention. Among the renewable energies, the solar energy gets a lot of attention as the infinite clean energy source. But, the supply level of solar cell is insignificant due to high cost of generation of electric power in comparison with fossil fuels. Thus several researchers are recently doing the research on ultra-low-cost solar cells. Also, $Cu_2O$ is one of the applied materials as an absorption layer in ultra-low-cost solar cells. Cuprous oxide ($Cu_2O$) is highly desirable semiconductor oxide for use in solar energy conversion due to its direct band gap ($E_g={\sim}2.1eV$) and a high absorption coefficient that absorbs visible light of wavelengths up to 650 nm. In addition, $Cu_2O$ has several advantages such as non-toxicity, low cost and can be prepared with simple and cheap methods on large scale. In this work, we fabricated the $Cu_2O$ thin films by reactive sputtering method. The films were deposited with a Cu target with variable parameters such as substrate temperature, rf-power, and annealing condition. Finally, we confirmed the structural properties of thin films by XRD and SEM.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.6
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• pp.44-51
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• 1999

The electrical conduction mechanism of high dielectric $(Ba,Sr)TiO_3$ (BST) thin film capacitor, which is the promising cell capacitor for high density DRAM, was investigated in low field region (<0.2MV/cm). It is known that the current in the low field region consists of dielectric relaxation current and leakage current. The current-time (I-t) measurement technique under the constant voltage was used for extracting successfully each current component. The conduction mechanism of the BST capacitor was deduced from the dependency of the current on the measurement temperature, strength of electric field, the polarity of applied electric field and post annealing process. From these results, it was suggested that the dielectric relaxation current and the leakage current are originated from the redistribution of internally trapped electron by hopping process and Pool-Frenkel conduction mechanism, respectively. It was also concluded that traps causing these two current components are due to oxygen vacancies within the BST film.

• Current Photovoltaic Research
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• v.3 no.3
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• pp.85-90
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• 2015

Two-step processes for preparing $Cu(In,Ga)Se_2$ absorber layers consist of precursor layer formation and subsequent annealing in a Se-containing atmosphere. Among the various deposition methods for precursor layer, the nonvacuum (wet) processes have been spotlighted as alternatives to vacuum-based methods due to their potential to realize low-cost, scalable PV devices. However, due to its porous nature, the precursor layer deposited on Mo substrate by nonvacuum methods often suffers from thick $MoSe_2$ formation during selenization under a high Se vapor pressure. On the contrary, selenization under a low Se pressure to avoid $MoSe_2$ formation typically leads to low crystal quality of absorber films. Although TiN has been reported as a diffusion barrier against Se, the additional sputtering to deposit TiN layer may induce the complexity of fabrication process and nullify the advantages of nonvacuum deposition of absorber film. In this work, Mo oxide layers via thermal oxidation of Mo substrate have been explored as an alternative diffusion barrier. The morphology and phase evolution was examined as a function of oxidation temperature. The resulting Mo/Mo oxides double layers were employed as a back contact electrode for $CuInSe_2$ solar cells and were found to effectively suppress the formation of $MoSe_2$ layer.

• Korean Journal of Materials Research
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• v.5 no.7
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• pp.835-841
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• 1995

The deposition properties of Si$_3$N$_4$ deposited by low pressure chemical vapor deposition were studied to evaluate Si$_3$N$_4$as part of multi-layer coatings for anti-oxidation and anti-wear coating of graphite in the propellant-burning environment. Si$_3$N$_4$was deposited on the pack-SiC coated graphite and the tendencies of deposition rate and surface morphology changes with temperatures and reaction gas ratios were investigated. In low deposition temperatures the deposition rate increased tilth increasing temperature but in high temperatures the deposition rate decreased with increasing temperature. The grain size of Si$_3$N$_4$decreased with increasing temperature. In condition that the range of reaction gas ratios is 20$\leq$NH$_3$/SiH$_4$$\leq$40, the deposition rate and surface morphology did not change. The Si$_3$N$_4$deposited at 800~130$0^{\circ}C$ was amorphous, and by post-annealing at 130$0^{\circ}C$ in a $N_2$ambient, the Si$_3$N$_4$crystalized.

• Journal of Magnetics
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• v.9 no.1
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• pp.17-22
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• 2004

We studied the magnetotransport properties of tunnel junctions with AlO and AlN barriers fabricated using microwave-excited plasma. The plasma nitridation process provided wider controllability than the plasma oxidization for the formation of MTJs with ultra-thin insulating layer, because of the slow nitriding rate of metal Al layers, comparing with the oxidizing rate of them. High tunnel magnetoresistance (TMR) ratios of 49 and 44% with respective resistance-area product $(R{\times}A) of 3 {\times} 10^4 and 6 {\times} 10^3 {\Omega}{\mu}m^2$ were obtained in the Co-Fe/Al-N/Co-Fe MTJs. We conclude that AlN is a hopeful barrier material to realize MTJs with high TMR ratio and low $R{\times}A$ for high performance MRAM cells. In addition, in order to clarify the annealing temperature dependence of TMR, the local transport properties were measured for Ta $50{\AA} /Cu 200 {\AA}/Ta 50 {\AA}/Ni_{76}Fe_{24} 20 {\AA}/Cu 50 {\AA}/Mn_{75}Ir_{25} 100 {\AA}/Co_{71}Fe_{29} 40 {\AA}/Al-O$ junction with $d_{Al}= 8 {\AA} and P_{O2}{\times}t_{0X}/ = 8.4 {\times} 10^4$ at various temperatures. The current histogram statistically calculated from the electrical current image was well in accord with the fitting result considering the Gaussian distribution and Fowler-Nordheim equation. After annealing at $340^{\circ}C$, where the TMR ratio of the corresponding MTJ had the maximum value of 44%, the average barrier height increased to 1.12 eV and its standard deviation decreased to 0.1 eV. The increase of TMR ratio after annealing could be well explained by the enhancement of the average barrier height and the reduction of its fluctuation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.5
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• pp.329-337
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• 2001

It has been known that the leakage current in the low field region consists of the dielectric relaxation current and intrinsic leakage current, which cause the charge loss in dynamic random access memory (DRAM) storage capacitor using (Ba,Sr)TiO$_{3}$ (BST) thin film. Especially, the dielectric relaxation current should be seriously considered since its magnitude is much larger than that of the intrinsic leakage current in giga-bit DRAM operation voltage (~IY). In this study, thermally stimulated current (TSC) measurement was at first applied to investigate the activation energy of traps and relative evaluation of the density of traps according to process change. And, through comparing TSC to early methods of I-V or I-t measurement and analyzing, we identify the origin of the dielectric relaxation current and investigate the reliability of TSC measurement. First, the polarization condition such as electric field, time, temperature and heating rate was investigated for reliable TSC measurement. From the TSC measurement, the energy level of traps in the BST thin film has been investigated and evaluated to be 0.20($\pm$0.01) eV and 0.45($\pm$0.02) eV. Based on the TSC measurement results before and after rapid thermal annealing (RTA) process, oxygen vacancy is concluded to be the origin of the traps. TSC characteristics with thermal annealing in the MIM BST capacitor have shown the same trends with the current-voltage (I-V) and current-time (I-t) characteristics. This means that the TSC measurement is one of the effective methods to characterize the traps in the BST thin film.

• Journal of the Korean Magnetics Society
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• v.10 no.5
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• pp.237-245
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• 2000

Effects of B addition and heat treatment on the magnetic and magnetostrictive properties of amorphous SmFe$_2$ thin films are investigated. A significant improvement in the magnetostrictive properties at low magnetic fields is observed with the addition of B. This improvement, however, is achieved at a heavy cost of intrinsic properties such as saturation magnetostriction. For example, at a magnetic field of 30 Oe, magnetostriction of a thin film with a B content of 9.9 at.% is increased from 190 to 333 ppm, but saturation magnetostriction is decreased by more than 50 %. This result is in accord with the deterioration (reduction) of saturation magnetization and the improvement (reduction) of coercive force at this B content. The magnetostrictive properties are also improved by annealing and optimum annealing temperature is found to be in the range 300-400 $^{\circ}C$. The main reason for the improvement is mainly considered to be due to the reduction of coercive force caused by stress relief, not due to the ultrafine SmFe$_2$ precipitates which were originally expected to form by annealing.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.2
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• pp.14-19
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• 2011

We have fabricated GaN Schottky barrier diode (SBD) for high-voltage applications on Si substrate. The leakage current and the electrical characteristics of GaN SBD are investigated by annealing metal-semiconductor junctions. Ohmic junctions of Ti/Al/Mo/Au and Schottky junctions of Ni/Au are used in the fabrication. A test structure is proposed to measured buffer leakage current through a mesa structure. When annealing temperature is increased from $700^{\circ}C$ to $800^{\circ}C$, measured buffer leakage current is also increased from 87 nA to 780 nA at the width of 100 ${\mu}m$. The diffusion of Au, Ti, Mo, O into GaN buffer layer increases the leakage current and that is verified by Auger electron spectroscopy. Experimental results show that the low leakage current and the high breakdown voltage of GaN SBD are achieved by annealing metal-semiconductor junctions.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.11
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• pp.35-43
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• 1995

To obtain high quality of $Ta_{2}O_{5}$ film, two dielectric layers of $Si_{3}N_{4}$ and $Ta_{2}O_{5}$ were subsequently formed on Si wafer. Silicon nitride films were thermally grown in 10 Torr ammonia ambient by R.F induced heating system. The thickness of thermally grown $Si_{3}N_{4}$ film was able to be controlled in the range of tens $\AA$ due to the self-limited growth property. $Ta_{2}O_{5}$ film of 200$\AA$ thickness was then deposited on the as-grown $Si_{3}N_{4}$ film about 25$\AA$ thickness by sputtering method and annealed at $900^{\circ}C$in $O_{2}$ ambient for 1hr. Stoichiometry film was prepared by the annealing in oxygen ambient. Despite the high temperature anneal process, silicon oxide layer was not grown at the interface of the layered films because of the oxidation barrier effect of Si$_{3}$N$_{4}$ film. The fabricated $Ta_{2}O_{5}$/$Si_{3}N_{4}$ film showed low leakage current less than several nA and high dielectric breakdown strength.