• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.67-71
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• 2001

Optical investigation on Zn-doped InGaN grown by MOCVD was performed by using the photoluminescence. Two different spectra related to Zn-acceptor-like centers occurred at room temperature, with broad emissions peaking at 2.81, and 2.60 eV, Specially, emissions interacted with phonon were observed at 2.81 eV where phonon energy was 92.5 meV From temperature dependent blue-band emissions of InGaN, we observe that the intensity in high energy region was quickly decreased more than that in low energy region with increased temperature, and the peak position at 2.81 eV was blue shift of about 18 meV, The blue-band emmissions would be originated from the transition related to the localized Zn complex centers.

• Korean Journal of Materials Research
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• v.21 no.5
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• pp.268-272
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• 2011

Due to their novel properties, GaN based semiconductors and their nanostructures are promising components in a wide range of nanoscale device applications. In this work, the gallium nitride is deposited on c-axis oriented sapphire and porous SWCNT substrates by molecular beam epitaxy using a novel single source precursor of $Me_2Ga(N_3)NH_2C(CH_3)_3$ with ammonia as an additional source of nitrogen. The advantage of using a single molecular precursor is possible deposition at low substrate temperature with good crystal quality. The deposition is carried out in a substrate temperature range of 600-750$^{\circ}C$. The microstructural, structural, and optical properties of the samples were analyzed by scanning electron microscopy, X-ray diffraction, Raman spectroscopy, and photoluminescence. The results show that substrate oriented columnar-like morphology is obtained on the sapphire substrate while sword-like GaN nanorods are obtained on porous SWCNT substrates with rough facets. The crystallinity and surface morphology of the deposited GaN were influenced significantly by deposition temperature and the nature of the substrate used. The growth mechanism of GaN on sapphire as well as porous SWCNT substrates is discussed briefly.

• Journal of Sensor Science and Technology
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• v.12 no.2
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• pp.66-71
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• 2003

Pt/AlGaN Schottky-type UV photodetectors were designed and fabricated. A low-temperature AlGaN interlayer buffer was grown between the AlGaN and GaN film in the diode structure epitaxy to obtain crack-free AlGaN active layers. A comparison was then made of the structural, electrical, and optical characteristics of two different diodes: one with an AlGaN($0.5\;{\mu}m$)/n+-GaN(2 nm) structure (type 1) and the other with an AlGaN($0.5\;{\mu}m$)/AlGaN interlayer($150\;{\AA}$)/n+-GaN($3\;{\mu}m$) structure(type 2). A crack-free AlGaN film was obtained by the insertion of a low-temperature AlGaN interlayer with an aluminum mole fraction of 26% into the $Al_xGa_{1-x}N$ layer. The fabricated Pt/$Al_{0.33}Ga_{0.67}N$ photodetector had a leakage current of 1 nA for the type 1 diode and $0.1\;{\mu}A$ for the type 2 diode at a reverse bias of -5 V. For the photoresponse measurement, the type 2 diode exhibited a cut-off wavelength of 300 nm, prominent responsivity of 0.15 A/W at 280 nm, and UV-visible extinction ratio of $1.5{\times}10^4$. Accordingly, the Pt/$Al_{0.33}Ga_{0.67}N$ Schottky-type ultraviolet photodetector with an AlGaN interlayer exhibited superior electrical and optical characteristics and improved UV detecting properties.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.2
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• pp.91-97
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• 2013

Self-heating effects during operation of high current AlGaN/GaN power transistors degrade the current-voltage characteristics. In particular, this problem becomes serious when a low thermal conductivity Si substrate is used. In this work, AlGaN/GaN-on-Si devices were fabricated with various channel widths and Si substrate thicknesses in which the structure dependent self-heating effects were investigated by temperature dependent measurements as well as thermal simulation. Accordingly, a device structure that can effectively dissipate the heat was proposed in order to achieve the maximum current in a multi-channel, large area device. Employing via-holes and common electrodes with a 100 ${\mu}m$ Si substrate thickness improved the current level by 75% reducing the channel temperature by 68%.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.174-174
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• 2010

Gallium Nitride(GaN) attracts great attention due to their wide band gap energy (3.4eV), high thermal stability to the solid state lighting devices like LED, Laser diode, UV photo detector, spintronic devices, solar cells, sensors etc. Recently, researchers are interested in synthesis of polycrystalline and amorphous GaN which has also attracted towards optoelectronic device applications significantly. One of the alternatives to deposit GaN at low temperature is to use Single Source Molecular Percursor (SSP) which provides preformed Ga-N bonding. Moreover, our group succeeds in hybridization of SSP synthesized GaN with Single wall carbon nanotube which could be applicable in field emitting devices, hybrid LEDs and sensors. In this work, the GaN thin films were deposited on c-axis oriented sapphire substrate by MBE (Molecular Beam Epitaxy) using novel single source precursor of dimethyl gallium azido-tert-butylamine($Me_2Ga(N_3)NH_2C(CH_3)_3$) with additional source of ammonia. The surface morphology, structural and optical properties of GaN thin films were analyzed for the deposition in the temperature range of $600^{\circ}C$ to $750^{\circ}C$. Electrical properties of deposited thin films were carried out by four point probe technique and home made Hall effect measurement. The effect of ammonia on the crystallinity, microstructure and optical properties of as-deposited thin films are discussed briefly. The crystalline quality of GaN thin film was improved with substrate temperature as indicated by XRD rocking curve measurement. Photoluminescence measurement shows broad emission around 350nm-650nm which could be related to impurities or defects.

• Journal of the Korean Vacuum Society
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• v.11 no.4
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• pp.207-211
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• 2002

Band gap tuning by quantum well disordering in $In_{0.53}Ga_{0.47}As/InGaAsP(Q1.25)$ quantum well structure has been investigated using photoluminescence. The threshold temperature for the blue shift was about $750^{\circ}C$ , and the blue shift became larger as the annealing temperature increased. $SiO_2$ showed saturation as the annealing temperature increased. $SiN_x$caused larger blue shift than $SiO_2$, which is considered to be related to the low growth temperature of $SiN_x$. The diffusion of P and Ga are thought to be responsible for the blue shift of the $SiN_x$ and $SiO_2$capped quantum well disordering , respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.124-124
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• 2010

Much interest has been focused on InGaN-based materials and their quantum structures due to their optoelectronics applications such as light emitting diode (LED) and photovoltaic devices, because of its high thermal conductivity, high optical efficiency, and direct wide band gap, in spite of their high density of threading dislocations. Build-in internal field-induced quantum-confined Stark effect in InGaN/GaN quantum well LED structures results in a spatial separation of electrons and holes, which leads to a reduction of radiative recombination rate. Therefore, many growth techniques have been developed by utilizing lateral over-growth mode or by inserting additional layers such as patterned layer and superlattices for reducing threading dislocations and internal fields. In this work, we investigated various characteristics of InGaN multiple quantum wells (MQWs) LED structures grown on selectively wet-etched porous (SWEP) GaN template layer and compared with those grown on non-porous GaN template layer over c-plane sapphire substrates. From the surface morphology measured by atomic force microscope, high resolution X-ray diffraction analysis, low temperature photoluminescence (PL) and PL excitation measurements, good structural and optical properties were observed on both LED structures. However, InGaN MQWs LED structures grown on SWEP GaN template layer show relatively low In composition, thin well width, and blue shift of PL spectra on MQW emission. These results were explained by rough surface of template layer, reduction of residual compressive stress, and less piezoelectric field on MQWs by utilizing SWEP GaN template layer. Better electrical properties were also observed for InGaN MQWs on SWEP GaN template layer, specially at reverse operating condition for I-V measurements.

• Journal of the Korean Vacuum Society
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• v.18 no.1
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• pp.37-43
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• 2009

Temperature and injection current dependence of electroluminescence(EL) spectral intensity of the $In_xGa_{1-x}N$/GaN multi-quantum wells(MQW) have been studied over a wide temperature range and as a function of injection current level. It is found that a temperature-dependent variation pattern of the EL efficiency under very low and high injection currents shows a drastic difference. This unique EL efficiency variation pattern with temperature and current can be explained field effects due to the driving forward bias in presence of internal(piezo and spontaneous polarization) fields. Increase of the indium content in $In_xGa_{1-x}N$/GaN multiple quantum wells gives rise to a redshift of 80 meV and 22 meV for green and blue MQW, respectively. It can be explained by carrier localization by potential fluctuation of multiple quantum well and MQW structures also shows a keen difference owing to the different indium content in InGaN/GaN MQW.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.281-281
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• 2014

The field emission properties of GaN are reported in the present study. To be a good field emitter, it requires a low work function, high aspect ratio, and strong mechanical stability. In the case of GaN, it has a quite low work function (4.1eV) and strong chemical/mechanical/thermal stabilities. However, so far, it was difficult to fabricate vertical GaN nanostructures with a high aspect ratio. In this study, we successfully achieved vertically well aligned GaN nanostructures with chemical vapor-phase etching methods [1] (Fig. 1). In this method, we chemically etched the GaN film using hydrogen chloride and ammonia gases at high temperature around $900^{\circ}C$. This process effectively forms vertical nanostructures without patterning procedure. This favorable shape of GaN nanostructures for electron emitting results in excellent field emission properties such as a low turn-on field and long term stability. In addition, we observed a uniform fluorescence image from a phosphor film attached at the anode part. The turn-on field for the GaN nanostructures is found to be about $0.8V/{\mu}m$ at current density of $20{\mu}A$/cm^2. This value is even lower than that of typical carbon nanotubes ($1V/{\mu}m$). Moreover, threshold field is $1.8V/{\mu}m$ at current density of $1mA$/cm^2. The GaN nanostructures achieved a high current density within a small applied field range. We believe that our chemically etched vertical nanostructures are the promising structures for various field emitting devices.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.3
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• pp.81-85
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• 2000

The effects of $NH_3$ flow rate and reactor pressure on Al composition and the interface of AlGaN/GaN heterostructure were studied. Equilibrium partial pressure of Ga and Al over AiGaN alloy was calculated as a function of growth pressure, $NH_3$flow rate and temperature. It was found equilbrium vapor pressure of Al is significantly lower than that of Ga, thus, the alloy composition mainly controlled by Ga partial pressure. We believe that more decomposition of Ga occur at lower $NH_3$ flow rate and higher growth pressure leads to preferred Al incorporation into AlGaN. The alloy composition gradient became larger at AlGaN/GaN heterointerface at higher reactor pressures, higher Al composition and low $NH_3$ flow rate. This composition gradient lowered sheet carrier concentration and electron mobility as well. We obtained an AlGaN/GaN heterostructure with sheet carrier density of ${\sim}2{\times}10^{13}cm^{-2}$ and mobility of 1250 and 5000 $cm^2$/Vs at 300 K and 100 K, respectively.