• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.265-265
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• 2007

In the present work, we have studied low temperature sintering and microwave dielectric properties of $ZnAl_2O_4$-zinc borosilicate (ZBS, 65ZnO-$25B_2O_3-10SiO_2$) glass composites. The focus of this paper was on the improvement of sinterability, low dielectric constant, and on the theoretical proof regarding of microwave dielectric properties in $ZnAl_2O_4$-ZBS glass composites, respectively. The $ZnAl_2O_4$ with 60 vo1% ZBS glass ensured successful sintering below $900^{\circ}C$. It is considered that the non-reactive liquid phase sintering (NPLS) occurred. In addition, $ZnAl_2O_4$ was observed in the $ZnAl_2O_4$-(x)ZBS composites, indicating that there were no reactions between $ZnAl_2O_4$ and ZBS glass. $ZnB_2O_4\;and\;Zn_2SiO_4$ with the willemite structure as the secondary phase was observed in the all $ZnAl_2O_4$-(x)ZBScomposites. In terms of dielectric properties, the application of the $ZnAl_2O_4$-(x)ZBS composites sintered at $900^{\circ}C$ to LTCC substrate were shown to be appropriate; $ZnAl_2O_4$-60ZBS (${\varepsilon}_r$= 6.7, $Q{\times}f$ value= 13,000 GHz, ${\tau}_f$= -30 ppm/$^{\circ}C$). Also, in this work was possible theoretical proof regarding of microwave dielectric properties in $ZnAl_2O_4$-(x)ZBS composites.

• Journal of the Korean Ceramic Society
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• v.55 no.6
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• pp.576-580
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• 2018

In this study, a small amount of CoO was added to commercial Gd-doped $CeO_2$ (GDC) powder. The CoO addition greatly enhanced sinterability at low temperatures, i.e., more than 98% of relative density was achieved at $1,000^{\circ}C$. When GDC/8YSZ (8 mol% yttrium stabilized zirconia) bilayers were sintered, Co-doped GDC showed excellent adhesion to the YSZ electrolyte. Transmission electron microscope (TEM) analysis showed that there were no traces of liquid films at the grain boundaries of GDC, whereas liquid films were observed in the Co-doped GDC sample. Because liquid films facilitate particle rearrangement and migration during sintering, mechanical stresses at the interface of a bilayer, which are developed based on different densification rates between the layers, might be reduced. In spite of $Co^{2+}$ doping in GDC, the electrical conductivity was not significantly changed, relative to GDC.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.32-33
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• 2006

In this study, in order to develop multilayer ceramic actuator for ultrasonic nozzle and ultrasonic vibrator, PMN-PNN-PZT ceramics were fabricated using $Li_2CO_3$. $Na_2CO_3$ and ZnO as sintering aids. And then, their piezoelectric and dielectric properties according to the amount of ZnO addition were investigated. The addition of ZnO improved density, dielectric constant, electromechanical coupling factor, mechanical quality factor and piezoelectric d constant of PMN-PNN-PZT ceramics due to the increase of sinterability and accepter doping effect. Electromechanical coupling factor and mechanical quality factor of PMN-PNN-PZT ceramics increased with ZnO amount up to 0.4wt% and then decreased. At the sintering temperature of $900^{\circ}C$ and 0.4wt% ZnO addition, density, dielectric constant, electromechanical coupling factor, mechanical quality factor and piezoelectric d constant showed the optimum value of 7.876g/$cm^2$, 1299, 0.612, 1151 and 369pC/N, respectively.

• The Korean Journal of Ceramics
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• v.5 no.3
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• pp.255-259
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• 1999

The effects of $SiO_2$ and MnO addition on the sinterability and the electrical properties of 0.4mol% Nb-doped SrTiO3 varistor were investigated. The $SiO_2$ content was fixed at 0.3mol% and the MnO content varied from 0 to 1.0mol%. With 0.3 mol% $SiO_2$ and 0.3 mol% MnO addition, optimum density was obtained by sintering at $1200^{\circ}C$ without excess liquid phase. Impedance spectroscopy was performed on the sintered specimens with 0.3 mol% $SiO_2$ and various MnO contents. It was found that the resistivities of grains was increased with increasing MnO content. The dielectric constant was measured to be above 50000 in the specimen with 0.3~1.0mol% Mn content. The non-linear coefficient increased substantially with MnO addition, and it varied from 1 to 9 depending on the MnO content.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.181-182
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• 2005

In this study, in order to develop multilayer piezoelectric transformer, PMN-PZT ceramics were fabricated according to PFW substitution using $Li_2CO_3-CaCO_3$ as sintering aids and their dielectric and piezoelectric characteristics were investigated. As increasing the amount of PFW substitution, density was slightly increased due to the increased sinterability. At the 1[mol%] PFW substituted PMN-PZT ceramic sintered at 950[$^{\circ}C$], density, dielectric constant $\varepsilon_r$, electromechanical coupling factor kp, mechanical quality factor Qm and piezoelectric $d_{33}$ constant showed the optimum value of 7.761[$g/cm^3$], 1251, 0.479, 1425 and 282[pC/N], respectively.

• Journal of the Korean Ceramic Society
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• v.42 no.12 s.283
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• pp.816-820
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• 2005

The doped-ceria is a strong candidate material for an intermediate temperature SOFC. However, the mechanical strength and the magnitude of electrical conductivity need to be increased at low sintering temperature. In this study, to improve both properties, $1at\% $ of Mg, Ca, Cr, Fe, Co, Ni, Cu, Ga, and Zr were added to the GDC20 ($20at\%$ Gd-doped Ceria) and sintered at $1350^{\circ}C$ that is $250^{\circ}C$ lower than $1600^{\circ}C$. With addition, the relative density of the sintered sample increased. Fe, Co, Ni, Cu, Ga doped-GDC20 showed high relative density over $92\%$. Among them, Ga doped-GDC20 showed the most improved sinterability. The conductivity of doped­GDC20 increased by $\~10$ times at $300\~700^{\circ}C$.

• Journal of Powder Materials
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• v.25 no.5
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• pp.402-407
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• 2018

Molybdenum silicide has gained interest for high temperature structural applications. However, poor fracture toughness at room temperatures and low creep resistance at elevated temperatures have hindered its practical applications. This study uses a novel powder metallurgical approach applied to uniformly mixed molybdenum silicide-based composites with silicon carbide. The degree of powder mixing with different ball milling time is also demonstrated by Voronoi diagrams. Core-shell composite powder with Mo nanoparticles as the shell and ${\beta}-SiC$ as the core is prepared via chemical vapor transport. Using this prepared core-shell composite powder, the molybdenum silicide-based composites with uniformly dispersed ${\beta}-SiC$ are fabricated using pressureless sintering. The relative density of the specimens sintered at $1500^{\circ}C$ for 10 h is 97.1%, which is similar to pressure sintering owing to improved sinterability using Mo nanoparticles.

• Journal of the Korean Ceramic Society
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• v.34 no.7
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• pp.685-692
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• 1997

Effects of sintering temperature and time on the phase formation, the characteristics of sintering and electrical behaviors of NASICON compounds with Na3Zr2Si2PO12 and Na3.2Zr1.3Si2.2P0.8O10.5 compositions synthesized by solid state reaction were investigated. Maximum relative densities of 96% and 91% were obtained for Na3Zr2Si2PO12 and Na3.2Zr1.3Si2.2P0.8O10.5 compounds, respectively. Complex impedance analysis in a frequency range below 4 MHz was performed to measure the ionic conductivity and migration barrier height of the compounds at RT-30$0^{\circ}C$. The maximum ionic conductivity and the minimum migration barrier height were 0.45 ohm-1cm-1 and 0.07 eV, respectively. The migration barrier height of the high temperature form (space group : R3c) is about 30-40% of that of the low temperature form (space group : C2/c) in two NASICON compounds. Ionic conductivity increases with increasing sinterability, and the presence of glass phase in Na3.2Zr1.3Si2.2P0.8O10.5 compounds lowers significantly ionic conductivity at temperatures above 14$0^{\circ}C$.

• Journal of Powder Materials
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• v.10 no.4
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• pp.270-274
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• 2003

Recently, the fabrication process of W-Cu nanocomposite powders has been researched to improve the sinterability by mechanochemical process (MCP), which consists of ball milling and hydrogen-reduction with W- and Cu-oxide mixture. However, there are many control variables in this process because the W oxides are hydrogen-reduced via several reduction stages at high temperature over 80$0^{\circ}C$ with susceptive reduction conditions. In this experiment, the W-15 wt%Cu nanocomposite powder was fabricated with the ball-milling and hydrogen-reduction process using W and CuO powder. The microstructure of the fabricated W-Cu nanocomposite powder was homogeneously composed of the fine W particles embedded in the Cu matrix. In the sintering process, the solid state sintering was certainly observed around 85$0^{\circ}C$ at the heating rate of 1$0^{\circ}C$/min. It is considered that the solid state sintering at low temperature range should occur as a result of the sintering of Cu phase between aggregates. The specimen was fully densified over 98% for theoretical density at 120$0^{\circ}C$ for 1 h with the heating rate of 1$0^{\circ}C$/min.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.313-314
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• 2006

$BiNbO_4$ ceramics were sintered under the presence of zinc-borosilicate(ZBS) glass and resultant microwave dielectric properties were investigated with a view to applying the composition to LTCC technology. The addition of 5~20 wt% ZBS glass ensured successful sintering below $900^{\circ}C$. In general, increased addition of ZBS glass increased sinterability and temperature coefficient of resonant frequency(${\tau}_f$), but it decreased the dielectric constant(${\varepsilon}_r$) and quality factor($Q{\times}f_0$) significantly due to the formation of an excessive liquid. The sintered $BiNbO_4$ ceramics at $900^{\circ}C$ with 15 wt% ZBS glass demonstrated 25 in dielectric constant(${\varepsilon}_r$), 3,700 in quality factor($Q{\times}f_0$), and -32 $ppm/{\circ}C$ in temperature coefficient of resonant frequency(${\tau}_f$).