• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2010년도 하계학술대회 논문집
• /
• pp.7-7
• /
• 2010

Indium tin oxide (ITO) - SWNT nano crystalline composites was synthesized at low temperature(${\sim}250^{\circ}C$)using Nano Cluster Deposition technique by Metal Orhoganic Chemical Vapor Deposition method. XRD patterns of ITO- SWNT composite shows pure cubic phases without any secondary phase. I-V measurement gives resistance of 12 ohms for Sn doped (3 wt %) indium oxide-SWNT composites. The electrical conductivity of the nano composites is significantly enhanced compared to the SWNT.

• Transactions on Electrical and Electronic Materials
• /
• 제10권4호
• /
• pp.131-134
• /
• 2009

The electrical properties and the microstructure of nitrogen-doped poly 3C-SiC films used for micro thermal sensors were studied according to different thicknesses. Poly 3C-SiC films were deposited by LPCVD (low pressure chemical vapor deposition) at $900^{\circ}C$ with a pressure of 4 torr using $SiH_2Cl_2$ (100%, 35 sccm) and $C_2H_2$ (5% in $H_2$, 180 sccm) as the Si and C precursors, and $NH_3$ (5% in $H_2$, 64 sccm) as the dopant source gas. The resistivity of the poly SiC films with a 1,530 ${\AA}$ thickness was 32.7 ${\Omega}-cm$ and decreased to 0.0129 ${\Omega}-cm$ at 16,963 ${\AA}$. The measurement of the resistance variations at different thicknesses were carried out within the $25^{\circ}C$ to $350^{\circ}C$ temperature range. While the size of the resistance variation decreased when the films thickness increased, the linearity of the resistance variation improved. Micro heaters and RTD sensors were fabricated on a $Si_3N_4$ membrane by using poly 3C-SiC with a 1um thickness using a surface MEMS process. The heating temperature of the SiC micro heater, fabricated on 250 ${\mu}m$${\times}$250 ${\mu}m$ $Si_3N_4$ membrane was $410^{\circ}C$ at an 80 mW input power. These 3C-SiC heaters and RTD sensors, fabricated by surface MEMS, have a low power consumption and deliver a good long term stability for the various thermal sensors requiring thermal stability.

• ETRI Journal
• /
• 제31권5호
• /
• pp.576-584
• /
• 2009

A novel tunable transconductor is presented. Input transistors operate in the triode region to achieve programmable voltage-to-current conversion. These transistors are kept in the triode region by a novel negative feedback loop which features simplicity, low voltage requirements, and high output resistance. A linearity analysis is carried out which demonstrates how the proposed transconductance tuning scheme leads to high linearity in a wide transconductance range. Measurement results for a 0.5 ${\mu}m$ CMOS implementation of the transconductor show a transconductance tuning range of more than a decade (15 ${\mu}A/V$ to 165 ${\mu}A/V$) and a total harmonic distortion of -67 dB at 1 MHz for an input of 1 Vpp and a supply voltage of 1.8 V.

• 한국세라믹학회지
• /
• 제44권12호
• /
• pp.727-732
• /
• 2007

In order to fabricate a highly performing cathode for low-temperature type solid oxide fuel cells working at below $700^{\circ}C$, electrode microstructure control and electrode polarization measurement were performed with an electronic conductor, $La_{0.8}Sr_{0.2}MnO_3$ (LSM) and a mixed conductor, $La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_3$(LSCF). For both cathode materials, when $Sm_{0.2}Ce_{0.8}O_2$ (SDC) buffer layer was formed between the cathode and yttria-stabilized zirconia (YSZ) electrolyte, interfacial reaction products were effectively prevented at the high temperature of cathode sintering and the electrode polarization was also reduced. Moreover, cathode polarization was greatly reduced by applying the SDC sol-gel coating on the cathode pore surface, which can increase triple phase boundary from the electrolyte interface to the electrode surface. For the LSCF cathode with the SDC buffer layer and modified by the SDC sol-gel coating on the cathode pore surface, the cathode resistance was as low as 0.11 ${\Omega}{\cdot}cm^2$ measured at $700^{\circ}C$ in air atmosphere.

• 전기학회논문지
• /
• 제66권7호
• /
• pp.1141-1148
• /
• 2017

Generally, a thermistor made by sintering a metal oxide is widely used to measure the ambient temperature. This thermistor is widely used not only for industrial use but also for medical use because of its excellent sensitivity, durability, temperature change characteristics and low cost. In particular, the normal body temperature is 36.9 degrees relative to the armpit temperature, and it is most closely related to the circulating blood flow. Previous studies have shown that body temperature changes during biomechanical changes and body temperature changes by anomalous signs or illnesses. Therefore, in this study, we propose a Lock-In-Amp design to detect minute temperature changes of clothing and thermistor wired by a preacher as a method to regularly measure body temperature in daily life. Especially, it is designed to measure the minute resistance change of the thermistor according to body temperature change even in a low-cost microprocessor environment by using a micro-processor-based Lock-In-Amp, and a jacquard and the thermistor is arranged so as to be close to the side, so that the reference body temperature can be easily measured. The temperature was measured and stored in real time using short-range wireless communication for non - restraint temperature monitoring. A baby vest was made to verify its performance through temperature experiments for infants. The measurement of infant body temperature through the existing skin sensor or thermometer has limitations in monitoring infant body temperature for a long time without restriction. However, it can be overcome by using the embroidery fabric based micro temperature monitoring wireless monitoring device proposed in this study.

• 전기화학회지
• /
• 제18권3호
• /
• pp.130-135
• /
• 2015

흑연 분말을 프탈로시아닌 또는 구리 프탈로시아닌과 함께 비활성 분위기에서 각각 열처리하여 표면처리를 진행하였고, 이의 속도특성과 저온 작동특성을 조사하였다. 표면처리 후 흑연 분말의 표면에 비정질 탄소와 구리의 코팅 층이 균일하게 형성되었다. 표면처리를 통하여 흑연 전극의 속도특성이 개선되는 것을 확인하였는데, 특히 구리 프탈로시아닌으로 처리한 경우 속도특성의 향상이 두드러졌다. 흑연 전극의 저항을 교류 임피던스와 펄스 저항측정법을 활용하여 조사하였는데, 구리 프탈로시아닌으로 처리된 흑연 전극의 경우가 저항이 가장 작았다. 프탈로시아닌으로 부터 유도된 비정질 탄소 층이 리튬이온의 확산을 용이하게 하고, 구리 프탈로시아닌으로부터 유도된 금속상태의 구리는 전자 전도도를 증가시키기 때문에 저항을 감소시키는 것으로 판단된다.

• 전기화학회지
• /
• 제13권2호
• /
• pp.96-102
• /
• 2010

본 연구에서는 균일부식이 발생하는 저합금강의 노출면적에 따른 부식속도의 변화를 관찰하고 이에 대한 원인을 규명하고자 하였다. 다양한 표면적을 지닌 동일한 저합금강 시편의 부식속도를 전기 화학적 임피던스 분광법, 직선분극저항 측정법, 동전위 분극 시험법을 이용하여 산출하였다. 또한 전자주사현미경, X선 광전자 분광법 및 X선 전자탐침 미량분석을 이용하여 표면분석을 실시하였다. 전기화학적 시험 결과 모든 시험법에서 시편의 크기가 증가할수록 부식속도가 높게 산출되었으며, 표면분석을 통해 망간과 황으로 구성된 화합물이 존재하는 영역에서 우선적으로 부식이 발생하며, 이 화합물과 철 또는 구리 산화물이 소양극-대음극의 미세 갈바닉 셀을 구성함을 확인하였다. 이러한 효과는 시편 크기에 비례하여 증가하였으며, 국부적인 부식이 우선적으로 발생한 후, 부식생성물이 표면을 덮게 되어 점차 균일부식의 형태로 전환하게 된다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
• /
• pp.181.2-181.2
• /
• 2015

Sputtering is one of the most popular physical deposition methods due to their versatility and reproducibility. Synthesis of Cr thin films by DC magnetron sputtering using glancing angle deposition (GLAD) has been reported. Chromium thin films have been prepared at two different working pressure($2.0{\times}10-2$, 30, $3.3{\times}10-3torr$) on Si-wafer substrate using magnetron sputtering with glancing angle deposition (GLAD) technique. The thickness of Cr thin films on the substrate was adjusted about 1 mm. The electrical property was measured by four-point probe method. For the measurement of density in the films, an X-ray reflectivity (XRR) was carried out. The sheet resistance and column angle increased with the increase of glancing angle. However, nanohardness and density of Cr thin films decreased as the glancing angle increased. The measured density for the Cr thin films decreased from 6.1 to 3.8 g/cc as the glancing angle increased from $0^{\circ}$ to $90^{\circ}$ degree. The low density of Cr thin films is resulted from the isolated columnar structure of samples. The evolution of the isolated columnar structure was enhanced at the conditions of low sputter pressure and high glancing angle. This GLAD technique can be potentially applied to the synthesis of thin films requiring porous and uniform coating such as thin film catalysts or gas sensors.

• 전기학회논문지
• /
• 제65권10호
• /
• pp.1780-1785
• /
• 2016

This paper presents few case studies of state diagnosis of XLPE cables using very low frequency techniques. The power cables of 22.9kV which have installation fault were assessed using VLF technique in addition to other techniques like insulation resistance and DC voltage withstand test. From the experimental results, The dielectric loss($tan{\delta}$) values of degradation of the cable(joint, knife, needle) at $U_0$ were 5.839, 5.526 and 6.251, respectively and all values were "further study advised". VLF PD measurement was also found defective portion. These method was effective in defect to fault in the degradation of the cable. However, the breakdown did not occur in the degradation of the cable because of properties of XLPE insulation. Few case studies of using VLF $tan{\delta}$ diagnosis for fault are measured and analyzed. The $tan{\delta}$ values at $U_0$ were "further study advised" or "action required".

• 전기학회논문지
• /
• 제65권9호
• /
• pp.1626-1631
• /
• 2016

Generally, the low-voltage customer has been used with a linear load and nonlinear load in the 3-phase 4-wire distribution system. Linear load has usually configured the resistance and inductance, current phase is slower than the voltage phase, so power factor is low. It is required for the power factor correction device prior to the phase of the current than the voltage. The capacitor is connected in parallel to the load in order to ensure a low power factor. Power converter such as an inverter is a typical non-linear load. Non-linear load generates harmonic currents in the energy conversion process. Many electrical equipment may be adversely affected by the harmonic current. There, passive or active filter have been used to reduce these harmonics current. Passive filter consisting of inductor and capacitor generates a reactive power. According to the combination of filter inductor and capacitor, reactive power can be adjusted. In this paper, we analyzed how the combination of inductor and capacitor affects the overall power factor by simulation and measurement.