• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.224-227
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• 1995

The micro-patterning by a Bow energy FIB whish has been conventionally utilized far mask-repairing was investigated. Amorphous Se$\_$75/Gee$\_$25/ resist irradiated by 9[keV]-defocused Ga$\^$+/ ion beam(∼10$\^$15/[ions/$\textrm{cm}^2$]) resulted in increasing the optical absorption, which was also observed also in the film exposed by an optical dose of 4.5${\times}$10$\^$20/[photons/$\textrm{cm}^2$]. The ∼0.3[eV] edge shift for ion-irradiated film was about twice to that obtained for photo-exposed. These large shift could be estimated as due to an increase in disorder from the decrease in the sloop of the Urbach tail. For Ga$\^$+/ FIB irradiation with a relatively low energy, 30[keV] and above the amount of dose of 1.4${\times}$10$\^$16/[ions/$\textrm{cm}^2$], the irradiated region in a-Se$\_$75/Ge$\_$25/ resist was perfectly etched in acid solution for 10[sec], which is relatively a short development time. A contrast was about 2.5. In spite of the relatively low incident energy,∼0.225[$\mu\textrm{m}$] pattern was clearly obtained by the irradiation of a dose 6.5${\times}$10$\^$16/[ions/$\textrm{cm}^2$] and a scan diameter 0.2[$\mu\textrm{m}$], from which excellent results were expected fur incident energies above 50[keV] which was conventionally used in FIBL.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.189-189
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• 2015

Plasmonics, sensor, field effect transistors, solar cells 등 다양한 적용분야를 가지는 실리콘 구조체는 제작공정에 의해 전기적 및 광학적 특성이 달라지기 때문에 적합한 나노구조 제작방법이 요구되고 있다. 나노구조체 제작방법으로는 Photo lithography, Extreme ultraviolet lithography (EUV), Nano imprinting lithography (NIL), Block copolymer (BCP) 방식의 방법들이 연구되고 있으며, 특히 BCP는 direct self-assembly 특성을 가지고 있으며 가격적인 면에서도 큰 장점을 가진다. 하지만 BCP를 mask로 사용하여 식각공정을 진행할 경우 BCP가 버티지 못하고 변형되어 mask로서의 역할을 하지 못한다. 이러한 문제를 해결하기 위하여 본 논문에서는 BCP와 질화막을 이용한 double mask 방법을 사용하였다. 기판 위에 BCP를 self-assembly 시키고 mask로 사용하여 hole 부분으로 노출된 기판을 Ion gun을 통해 질화 시킨 후에 BCP를 제거한다. 기판 위에 hole 모양의 질화막 표면은 BCP와 다르게 etching 공정 중 변형되지 않는다. 이러한 질화막 표면을 mask로 사용하여 pillar pattern의 실리콘 나노구조체를 제작하였다. 질화막 mask로 사용되는 template은 PS와 PMMA로 구성된 BCP를 사용하였다. 140kg/mol의 polystyrene과 65kg/mol의 PMMA를 톨루엔으로 용해시키고 실리콘 표면 위에 spin coating으로 도포하였다. Spin coat 후 230도에서 40시간 동안 열처리를 진행하여 40nm의 직경을 가진 PS-b-PMMA self-assembled hole morphology를 형성하였다. 질화막 형성 및 etching을 위한 장비로 low-energy Ion beam system을 사용하였다. Reactive Ion beam은 ICP와 3-grid system으로 구성된 Ion gun으로부터 형성된다. Ion gun에 13.56 MHz의 frequency를 갖는 200W 전력을 인가하였다. Plasma로부터 나오는 Ion은 $2{\Phi}$의 직경의 hole을 가지는 3-grid hole로 추출된다. 10~70 voltage 범위의 전위를 plasma source 바로 아래의 1st gird에 인가하고, 플럭스 조절을 위해 -150V의 전위를 2nd grid에 인가한다. 그리고 3rd grid는 접지를 시켰다. chamber내의 질화 및 식각가스 공급은 2mTorr로 유지시켰다. 그리고 기판의 온도는 냉각칠러를 이용하여 -20도로 냉각을 진행하였다. 이와 같은 공정 결과로 100 nm 이상의 높이를 갖는 40 nm직경의 균일한 Silicon pillar pattern을 형성 할 수 있었다.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1114-1117
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• 2004

We investigated the liquid crystal (LC) alignment phenomena using hydrogenated amorphous carbon (a-C:H) thin films. For LC alignment, the surface of a-C:H thin films is treated with low energy ion beam. We investigated the relationship between the properties of a-C:H thin films and LC alignment phenomena.

• Vacuum Magazine
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• v.4 no.1
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• pp.4-11
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• 2017

The Rare Isotope Science Project (RISP) has been launched for developing a superconducting heavy-ion linear accelerator, which produces various rare isotopes for low energy nuclear science and applied sciences. This superconducting linac is designed to achieve a very high beam current (200Mev/u with 400 kW beam power) of heavy ions including Uranium. For the high current accelerator, the requirement of ultra high-vacuum level is considered as one of the of important factors. Vacuum calculations have been carried out to verify the vacuum system design satisfied the requirements. In this paper, an overview of RISP and vacuum calculation methods for several interesting sections of the superconducting linear accelerator.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.81-83
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• 2000

Tin-doped indium oxide(ITO) thin films were deposited on polyethylene terephthalate(PET) at room temperature by oxygen ion beam assisted evaporator system and the effects of oxygen gas flow rate on the properties of room temperature ITO thin films were investigated. Plasma characteristics of the ion gun such as oxygen ions and atomic oxygen radicals as a function of oxygen flow rate were investigated using optical emission spectroscopy(OES). Faraday cup also used to measure oxygen ion density. The increase of oxygen flow rate to the ion gun generally increase the optical transmittance of the deposited ITO up to 6sccm of $O_2$ and the further increase of oxygen flow rate appears to saturate the optical transmittance. In the case of electrical property, the resistivity showed a minimum at 6 sccm of $O_2$ with the increase of oxygen flow rate. Therefore, the improved ITO properties at 6 sccm of $O_2$ appear to be more related to the incorporation of low energy oxygen radicals to deposited ITO film rather than the irradiation of high energy oxygen ions to the substrate. At an optimal deposition condition, ITO thin films deposited on PET substrates showed the resistivity of $6.6{\times}10^{-4}$ ${\Omega}$ cm and optical transmittance of above 90%.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.333-333
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• 2011

We studied the H/D exchange kinetics of pure and acid dopped water-ice film by using the techniques of reactive ions scattering (RIS) and low energy sputtering (LES) with low kinetic energy cesium ion beam (<35 eV). From RIS, neutral water isotopomers were detected in the form of cesium-molecule ion clusters, $CsX^+$ (X= $H_2O$, HDO, $D_2O$). Ionic species, like $H_3O^+$, $DH_2O^+$, $D_2HO^+$, $D_3O^+$, adsorbed on the surface were ejected via LES process. Those techniques allowed us to trace the isotopomeric populations of water-ice film. To show the catalytic effect of excess proton in the H/D exchange reaction, our study was conducted with two types of water-ice films. In film 1, about 0.5 BL of $H_2O$ was adsorbed on HCl (0.1 ML) dopped $D_2O$ (8 BL) film. In film 2, similar amount of $H_2O$ used in film 1 was adsorbed on pure $D_2O$ film. Kinetic data were obtained from each film type for 90-110 K (film 1) and 110-130 K (film 2) and fitted with numerically integrated lines. Through the Arrhenius plot of kinetic coefficient deduced from fitting of the H/D exchange reaction, the activation energy of film 1 and 2 were estimated to be $10{\pm}3kJmol^{-1}$ and $17{\pm}4kJmol^{-1}$. This activation barrier difference could be understood from detailed pictures of H/D exchange. In film 2, both the formation of ion pair, $H_3O^+$ and OH. and proton transfer were needed for the H/D exchange. However, in film 1, only proton transfer was necessary but ion pair formation was not, so this might reduce the activation energy.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.188.1-188.1
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• 2014

Aluminum is widely used as a material for electrode on silicon based devices. Especially, aluminum films are used as backside and front-side electrodes in silicon quantum dot (QD) solar cells. In this point, the diffusion of aluminum is very important for the enhancement of power conversion efficiency by improvement of contact property. Aluminum was deposited on a Si (100) wafer and a Si QD layer by ion beam sputter system with a DC ion gun. The Si QD layer was fabricated by $1100^{\circ}C$ annealing of the $SiO_2/SiO_1$ multilayer film grown by ion beam sputtering deposition. Cs ion beam with a low energy and a grazing incidence angle was used in SIMS depth profiling analysis to obtain high depth resolution. Diffusion behavior of aluminum in the Al/Si and Al/Si QD interfaces was investigated by secondary ion mass spectrometry (SIMS) as a function of heat treatment temperature. It was found that aluminum is diffused into Si substrate at $450^{\circ}C$. In this presentation, the effect of heat treatment temperature and Si nitride diffusion barrier on the diffusion of Al will be discussed.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• v.47 no.4
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• pp.315-320
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• 2021

Carbon-ion radiotherapy (CIRT) is on the rise as a treatment choice for malignant tumor. Compared to conventional radiotherapy, particle beams have different physical and biological properties. Particle beam provides a low entry dose, deposits most of the energy at the endpoint of the flight path, and forms an asymptotic dose peak (the "Bragg peak"). Compared to protons, carbon with its larger mass decreases beam scattering, resulting in a sharper dose distribution border. We report a 50-year-old male who underwent CIRT without surgical resection on osteosarcoma of the mandible. After CIRT, the patient's pain was gone, and the malignant mass remained stable with accompanying necrosis. Nine months later, however, magnetic resonance imaging demonstrated progression of the left mandibular osteosarcoma with pulmonary metastases. After multidisciplinary discussion, concurrent chemoradiotherapy was conducted. While necrotic bone segments came out of the mandible during subsequent periodic outpatient visits, the tumor itself was stable. Thirty months after his first visit and diagnosis, the patient is waiting for chemotherapy. Although CIRT is superior in treating radioresistant hypoxic disease, CIRT is in its infancy, so care must be taken for its indications and complications.

• Korean Journal of Optics and Photonics
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• v.2 no.3
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• pp.133-138
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• 1991

Eosin-doped boric acid glass saturable absorber has a relatively low saturation intensity (700 mW/$\textrm{cm}^2$) and low power optical phase conjugation is achived by the degenerate four-wave mixing (DFWM) experiments. Polarization properties of optical phase conjugation by DFWM have been demonstrated in this materials using a cw argon ion laser at wavelength 488 nm. The dependence of the phase conjugated reflectivity on the intensity and wavelength of the pump beam is examined. The magnitude of the energy exchange by the nondegenerate two-wave mixing (NDTWM) is maximized by frequency difference between the two beams of $\varphi\simeq$ 1100 Hz.

• Nuclear Engineering and Technology
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• v.54 no.2
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• pp.666-673
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• 2022

The optimization of a transmission type bremsstrahlung conversion target was carried out with Monte Carlo code FLUKA for intense pulsed electron beams with electron energy of several hundred keV for maximum photon fluence. The photon emission intensity from electrons with energy ranging from 300 keV to 1 MeV on tungsten, tantalum and molybdenum targets was calculated with varied target thicknesses. The research revealed that higher target material element number and electron energy leads to increased photon fluence. For a certain target material, the target thickness with maximum photon emission fluence exhibits a linear relationship with the electron energy. With certain electron energy and target material, the thickness of the target plays a dominant role in increasing the transmission photon intensity, with small target thickness the photon flux is largely restricted by low energy loss of electrons for photon generation while thick targets may impose extra absorption for the generated photons. The spatial distribution of bremsstrahlung photon density was analyzed and the optimal target thicknesses for maximum bremsstrahlung photon fluence were derived versus electron energy on three target materials for a quick determination of optimal target design.