• 제목/요약/키워드: Low energy ion beam

검색결과 120건 처리시간 0.022초

Fabrication of interface-controlled Josephson junctions using Sr$_2$AlTaO$_6$ insulating layers

  • Kim, Jun-Ho;Choi, Chi-Hong;Sung, Gun-Yong
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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    • pp.165-168
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    • 2000
  • We fabricated ramp-edge Josephson junctions with barriers formed by interface treatments instead of epitaxially grown barrier layers. A low-dielectric Sr$_2$AlTaO$_6$(SAT) layer was used as an ion-milling mask as well as an insulating layer for the ramp-edge junctions. An ion-milled YBa$_2$Cu$_3$O$_{7-x}$ (YBCO)-edge surface was not exposed to solvent through all fabrication procedures. The barriers were produced by structural modification at the edge of the YBCO base electrode using high energy ion-beam treatment prior to deposition of the YBCO counter electrode. We investigated the effects of high energy ion-beam treatment, annealing, and counter electrode deposition temperature on the characteristics of the interface-controlled Josephson junctions. The junction parameters such as T$_c$, I$_c$c, R$_n$ were measured and discussed in relation to the barrier layer depending on the process parameters.

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저 에너지 표면 개질 이온원이 설치된 진공 웹 공정을 이용한 2층 flexible copper clad laminate 제작 (Fabrication of 2-layer Flexible Copper Clad Laminate by Vacuum Web Coater with a Low Energy Ion Source for Surface Modification)

  • 최형욱;박동희;최원국
    • 한국재료학회지
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    • 제17권10호
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    • pp.509-515
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    • 2007
  • In order to fabricate adhesiveless 2-layer flexible copper clad laminate (FCCL) used for COF (chip on film) with high peel strength, polyimide (PI; Kapton-EN, $38\;{\mu}m$) surface was modified by reactive $O_2^+$ and $N_2O^+$ ion beam irradiation. 300 mm-long linear electron-Hall drift ion source was used for ion irradiation with ion current density (J) higher than $0.5\;mA/cm^2$ and energy lower than 200 eV. By vacuum web coating process, PI surface was modified by linear ion source and then 10-20 nm thick Ni-Cr and 200 nm thick Cu film were in-situ sputtered as a tie layer and seed layer, respectively. Above this sputtered layer, another $8-9{\mu}m$ thick Cu layer was grown by electroplating and subsequently acid and base resistance and thermal stability were tested for examining the change of peel strength. Peel strength for the FCCLs treated by both $O_2^+$ and $N_2O^+$ ion irradiation showed similar magnitudes and increased as the thickness of tie layer increased. FCCL with Cu (200 nm)/Ni-Cr (20 nm)/PI structure irradiated with $N_2O^+$ at $1{\times}10^{16}/cm^2$ ion fluence was proved to have a strong peel strength of 0.73 kgf/cm for as-received and 0.34 kgf/cm after thermal test.

Ag/a-$Se_{75}$$Ge_{25}$박막의 Ag Doping Mechaism 해석[I]

  • 김민수;이현용;정홍배;이영종
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1994년도 춘계학술대회 논문집
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    • pp.113-115
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    • 1994
  • We considered the ion and photo-induced properties as a function of wavelength by exposing the light over the band gap of a-Ag/a-$Se_{75}$$Ge_{25}$ and the low-energy defocused $Ga^{+}$ ion beam on Ag/a-$Se_{75}$$Ge_{25}$ thin film. This film acts as a negative resist for photo or ion beam lithography. We observed that the absorbance coefficient decreased with increasing the photo-exposing time and exposing the ion beam. The bandgap shifts toward longer wavelength called a "darkening effect" are observed in the films exposed to both photons and ions. We suggest that a primary step in the Ag layer and a secondary step is in a-$Se_{75}$$Ge_{25}$ film layer.

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Investigation of Some Hard Coatings Synthesized by Ion Beam Assisted Deposition

  • He, Jian-Li;Li, Wen-Zhi;He, Xial-Ming;Liu, Chang-Hong
    • 한국진공학회지
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    • 제4권S2호
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    • pp.163-169
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    • 1995
  • Ion beam assisted deposition(IBAD) technique was used to synthesize hard coatings including diamond-like carbon(DLC), carbon nitride(CN) and metal-ceramic multilayered films. It was found that DLC films formed at low energy ion bombardment possess more $Sp^3$ bonds and much higher hardness. The films exhibited an excellent wear resistance. Nanometer multialyered Fe/TiC films was deposited by ion beam sputtering. The structure and properties were strongly dependent on the thickness of the individual layers and modulation wave length. It was disclosed that both hardness and toughness of the films could be enhanced by adjusting the deposition parameters. The CN films synthesized by IBAD method consisted of tiny crystallites dispersed in amorphous matrix, which were identified by electron diffraction pattern to be $\beta -C_3N_4$.

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집속 이온빔과 디지털 화상 관련법를 이용한 고 탄소 미세 강선의 잔류 응력 측정 (Measurement of residual stress of steel filaments by using focused ion beam and digital image correlation)

  • 양요셉;배종구;강기주;박찬경
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2007년도 춘계학술대회 논문집
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    • pp.241-245
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    • 2007
  • The residual stress in axial stress in the axial direction of the steel filaments has been measured by using a method based on the combination of the focused ion beam (FIB) and high resolution strain mapping program (VIC-2D). That is, the residual stress was calculated from the measured displacement field before and after the introduction of a slot along the steel filaments. The displacement was obtained by the digital correlation analysis of high-resolution scanning electron micrographs, while the slot was introduced by FIB milling with low energy beam. The present measurement revealed that the residual stress within 8% of the magnitude was persistent in the steel filaments fabricated.

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집속 이온빔과 디지털 화상 관련법을 이용한 고 탄소 미세 강선의 잔류 응력 측정 (Measurement of the Residual Stress in the Steel Wires by using Focused Ion Beam and Digital Image Correlation Method)

  • 양요셉;배종구;박찬경
    • 소성∙가공
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    • 제16권4호
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    • pp.323-328
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    • 2007
  • The residual stress in axial direction of the steel wires has been measured by using a method based on the combination of the focused ion beam(FIB) milling and digital image correlation(DIC) program. The residual stress is calculated from the measured displacement field before and after the introduction of a slot along the steel wires. The displacement is obtained by the digital correlation analysis of high-resolution scanning electron micrographs, while the slot is introduced by FIB milling with low energy beam. The experimental procedures are described and the feasibilities are demonstrated in steel wires fabricated with different conditions. It reveals that the tensile residual stress is formed in all steel wires and this is strongly influenced by the fabrication conditions.

Effect of Low-Energy Electron Irradiation on DNA Damage by Cu2+ Ion

  • Noh, Hyung-Ah;Park, Yeunsoo;Cho, Hyuck
    • Journal of Radiation Protection and Research
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    • 제42권1호
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    • pp.63-68
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    • 2017
  • Background: The combined effect of the low energy electron (LEE) irradiation and $Cu^{2+}$ ion on DNA damage was investigated. Materials and Methods: Lyophilized pBR322 plasmid DNA films with various concentrations (1-15 mM) of $Cu^{2+}$ ion were independently irradiated by monochromatic LEEs with 5 eV. The types of DNA damage, single strand break (SSB) and double strand break (DSB), were separated and quantified by gel electrophoresis. Results and Discussion: Without electron irradiation, DNA damage was slightly increased with increasing Cu ion concentration via Fenton reaction. LEE-induced DNA damage, with no Cu ion, was only 6.6% via dissociative electron attachment (DEA) process. However, DNA damage was significantly increased through the combined effect of LEE-irradiation and Cu ion, except around 9 mM Cu ion. The possible pathways of DNA damage for each of these different cases were suggested. Conclusion: The combined effect of LEE-irradiation and Cu ion is likely to cause increasing dissociation after elevated transient negative ion state, resulting in the enhanced DNA damage. For the decrease of DNA damage at around 9-mM Cu ion, it is assumed to be related to the structural stabilization due to DNA inter- and intra-crosslinks via Cu ion.

The improvement of Cu metal film adhesion on polymer substrate by the low-power High-frequency ion thruster

  • Jung Cho;Elena Kralkina;Yoon, Ki-Hyun;Koh, Seok-Keun
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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    • pp.60-60
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    • 2000
  • The adhesion interface formation between copper and poly(ethylene terephthalate)(PET), poly(methyl methacrylate)(PMMA) and Polyimide films was treated using Ion assisted reaction system to sequential sputter deposition by High-Frequency ion source. The ion beam modification system used a new type of low power HF ion thruster for space application as new low thruster electric propulsion system. Low power HF ion thruster with diameter 100mm gives the opportunity to obtain beams of Ar+ with currents 20~150 mA (current density 0.5~3.5 mA/cm2) and energy 200~2500eV at HF power level 10~150 W. Using Ar as a working gas it is possible to obtain thrust within 3~8 mN. Contact angles for untreated films were over 95$^{\circ}$ and 80 for Pet, 10o for PMMA and 12o for PI samples as a condition of ion assisted reaction at the ion dose of 10$\times$1016 ions/cm2, the ion beam potential of 1.2 keV and 4 ml/min for environmental gas flow rate. 900o peel tests yielded values of 15 to 35 for PET, 18 to 40 and 12 to 36 g/min. respectively. High resolution X-ray photoelectron spectrocopy is the Cls region for Cu metal on these polymer substrates showed increases in C=O-O groups for polymide, whereas PET and PMMA treated samples showed only C=O groups with increase the ion dose. Finally, unstable polymer surface can be changed from hydrophobic to hydrophilic formation such as C-O and C=O that were confirmed by the XPS analysis, conclusionally, the ion assisted reaction is very effective tools to attach reactive ion species to form functional groups on C-C bond chains of PET, PMMA and PI.

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