• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2010년도 춘계학술대회 논문집
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• pp.559-560
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• 2010

• 열처리공학회지
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• 제24권2호
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• pp.77-81
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• 2011

Aluminum nitride (AlN) thin films were prepared by using nitrogen ion beam assisted reactive radio frequency (RF) magnetron sputtering on the glass substrates without intentional substrate heating. After deposition, the effect of nitrogen ion beam energy on the structural and optical properties of AlN films were investigated by x-ray diffraction (XRD), atomic force microscope (AFM) and UV-Vis. spectrophotometer, respectively. AlN films deposited with $N^+$ ion irradiation at 100 eV show the higher (002) peak intensity in XRD pattern than other films. It means that $N^+$ ion energy of 100 eV is the favorable condition for low temperature crystallization. AFM images also show that surface average roughness is increased from 1.5 to 9.6 nm with $N^+$ ion energy in this study. In an optical observation, AlN films which deposited by $N^+$ ion beam energy of 100 eV show the higher transmittance than that of the films prepared with the other $N^+$ ion beam conditions.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.409-412
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• 2002

We found that polyimide surfaces bombarded by a low energy argon ion beam align liquid crystals. The pretilt angle of the liquid crystals is controlled by ion beam parameters, such as the energy of the incident ions, the angle of incidence, exposure time and current density. The alignment direction of liquid crystal on substrates corresponded to ion beam direction. By argon ion beam the pretilt angle of the liquid crystals was controlled between $0.5^{\circ}$ and $4^{\circ}$for SE-3140 under the proper conditons. By the atomic force microscope (AFM), polyimide surfaces before and after bombarded by ion beam are compared.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제16회 학술발표회 논문개요집
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• pp.60-60
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• 1999

• 한국전기전자재료학회논문지
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• 제20권3호
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• pp.245-249
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• 2007

The liquid crystal display (LCD) applications treated on the organic overcoat thin film surfaces by ion beam irradiation was successfully studied. The good LC aligning capabilities treated on the organic overcoat thin film surfaces with ion beam exposure of $60^{\circ}$ for 2 min above ion beam energy of 1200 eV can be achieved. But, the alignment of defect of NLC on the organic overcoat surface at low energy of 600 eV was measured. The pretilt angle of NLC on the organic overcoat thin film surface with ion beam exposure of $60^{\circ}$ for 2 min at energy of 1800 eV was measured about 1 degree. Finally, the good thermal stability of LC alignment on the organic overcoat thin film surface with ion beam exposure of $60^{\circ}$ for 2 min until annealing temperature of $200^{\circ}C$ can be measured.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 추계학술대회 논문집
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• pp.326-329
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• 2005

As a flexible method to fabricate sub-micrometer patterns, Focused Ion Beam (FIB) instrument and Self-Assembled Monolayer (SAM) resist are introduced in this work. FIB instrument is known to be a very precise processing machine that is able to fabricate micro-scale structures or patterns, and SAM is known as a good etch resistance resist material. If SAM is applied as a resist in FIB processing fur fabricating nano-scale patterns, there will be much benefit. For instance, low energy ion beam is only needed for machining SAM material selectively, since ultra thin SAM is very sensitive to $Ga^+$ ion beam irradiation. Also, minimized beam spot radius (sub-tens nanometer) can be applied to FIB processing. With the ultimate goal of optimizing nano-scale pattern fabrication process, interaction between SAM coated specimen and $Ga^+$ ion dose during FIB processing was observed. From the experimental results, adequate ion dose for machining SAM material was identified.

• 한국진공학회지
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• 제6권S1호
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• pp.110-114
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• 1997

Development of metal ion source growth of high quality Cu metal film formation of non-stoichiometric $SnO_2$ films of Si(100), and modification fo polymer surface by low enregy ion beam have been carried out at KIST Ion Beam Lab. A new metal ion source with high ion beam flux has been developed by a hybrid ion beam (HIB) deposition and non-stoichiometric $SnO_2$ films are controlled by supplying energy. The ion assisted reaction (IAR) in which keV ion beam is irradiated in reactive gas environment has been deveolped for modifying the polymers and enhancing adhesion to other materials and advantages of the IAR have been reviewed.

• Journal of Microbiology and Biotechnology
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• 제14권2호
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• pp.363-366
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• 2004

In order to obtain an industrial strain with higher L(+)-lactic acid yield, the wild type strain Rhizopus oryzae PW352 was mutated by means of Nitrogen ions implantation (l5 Kev, $7.8 \times 10^{14} - 2.08 \times 10^{15} ions/Cm^2$ and two mutants RE3303 and RF9052 were isolated. After 36 h shake-flask cultivation, the concentration of L(+)-lactic acid reached 131-136 g/l, the conversion rate of glucose was as high as 86%-90% and the productivity was 3.61 g/l.h. It was almost a 75% increase in lactic acid production compared with the wild type strain. Maximum fermentation temperature of RF9052 was increased to $45^{\circ}C$ from original $36^{\circ}C$. At the same time, the preferred range of fermentation temperature of RF9052 was broadened compared with PW352.

• 전자공학회논문지 IE
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• 제47권2호
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• pp.8-12
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• 2010

TEM(Transmission Electrion microsopy) 투과전자현미경은 재료의 기초 구조 분석과 반도체 또는 생물시편의 미세 구조분석에 널리 사용되는 장비이다. TEM 분석은 필수적으로 목적에 부합되는 적절한 시편제작이 수반되어야 한다. 다양한 전자 현미경 시편 제작 방법 중 본 논문에서는 FIB(Focus Ion Beam)를 이용한 시편 제작법 중 시편에 입사되는 에너지와 이온 Gun과 시편과의 상호 각도, 이온 밀링 깊이 조절 등의 실험을 통하여 표면 손상 최소화를 벌크 웨이퍼와 패턴화된 시편에서 실험하였다. 최소화된 표면 영향성(약 5nm)을 패턴화된 시편에 구현하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.543-546
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• 2005

We have investigated the alignment ability of multi-domains by using ion beam irradiation on diamond-like carbon (DLC) thin film layers. The DLC thin films were deposited by plasma enhanced chemical vapor deposition (PECVD) system and the low energy ion beam is irradiated from Kaufman type ion gun. The direction of liquid crystal alignment is varied by the direction of Ar ion beam irradiation.