• Journal of the Korea Institute of Information and Communication Engineering
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• v.3 no.3
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• pp.517-531
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• 1999

This paper presents the development of the 2-mode variable gain high power amplifier for a transmitter of INMARSAT-M operating at L-band(1626.5-1646.5 MHz). This SSPA(Solid State Power Amplifier) is amplified 42 dBm in high power mode and 36 dBm in low power mode for INMARSAT-M. The allowable error sets +1 dBm of an upper limit and -2 dBm of a lower limit, respectively. To simplify the fabrication process, the whole system is designed by two parts composed of a driving amplifier and a high power amplifier, The HP's MGA-64135 and Motorola's MRF-6401 are used for driving amplifier, and the ERICSSON's PTE-10114 and PTF-10021 are used the high power amplifier. The SSPA was fabricated by the circuits of RF, temperature compensation and 2-mode gain control circuit in aluminum housing. The gain control method was proposed by controlling the voltage for the 2-mode. In addition, It has been experimentally verified that the gain is controlled for single tone signal as well as two tone signals. The realized SSPA has 42 dB and 36 dB for small signal gain within 20 MHz bandwidth, and the VSWR of input and output port is less than 1.5:1 The minimum value of the 1 dB compression point gets 5 dBm for 2-mode variable gain high power amplifier. A typical two tone intermodulation point has 32.5 dBc maximum which is single carrier backed off 3 dB from 1 dB compression point. The maximum output power of 43 dBm was achieved at the 1636.5 MHz. These results reveal a high power of 20 Watt, which was the design target.the design target.

• Journal of the Korean Society of Radiology
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• v.5 no.6
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• pp.357-361
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• 2011

In this study, the liquid-crystal optical modulation X-ray detection system using a CdS which is a family of II-IV compound semiconductor was proposed. The system consist of the detector, the signal processing part, the liquid-crystal driving parts, microcontroller, and I/O parts, and was designed to be suitable for miniaturization and portable. In addition, the system can measure a wide range X-ray by using the detecting range selection. In order to evaluate the performance of the proposed system, the CdS sensor's output characteristics were confirmed in accordance with changes of dose, and excellent correlation was determined. And also, the optical penetration ratio was discussed in accordance with changes of the applied voltage by measuring the change of the liquid-crystal in accordance with changes of the applied voltage. Through these results, the characteristics of the liquid-crystal optical modulation system such as the excellent reproducibility and the noise immunity were confirmed. And we considered that the CdS cell-based liquid-crystal optical modulated portable X-ray detection system could be applied to compact, low-cost, portable system.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.3 s.345
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• pp.21-32
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• 2006

A new SRAM circuit with row-by-row activation and low-swing write schemes is proposed to reduce switching power of active cells as well as leakage one of sleep cells in this paper. By driving source line of sleep cells by $V_{SSH}$ which is higher than $V_{SS}$, the leakage current can be reduced to 1/100 due to the cooperation of the reverse body-bias. Drain Induced Barrier Lowering (DIBL), and negative $V_{GS}$ effects. Moreover, the bit line leakage which may introduce a fault during the read operation can be eliminated in this new SRAM. Swing voltage on highly capacitive bit lines is reduced to $V_{DD}-to-V_{SSH}$ from the conventional $V_{DD}-to-V_{SS}$ during the write operation, greatly saving the bit line switching power. Combining the row-by-row activation scheme with the low-swing write does not require the additional area penalty. By the SPICE simulation with the Berkeley Predictive Technology Modes, 93% of leakage power and 43% of switching one are estimated to be saved in future leakage-dominant 70-un process. A test chip has been fabricated using $0.35-{\mu}m$ CMOS process to verify the effectiveness and feasibility of the new SRAM, where the switching power is measured to be 30% less than the conventional SRAM when the I/O bit width is only 8. The stored data is confirmed to be retained without loss until the retention voltage is reduced to 1.1V which is mainly due to the metal shield. The switching power will be expected to be more significant with increasing the I/O bit width.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.489-492
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• 2005

We report new polymer stabilized ferroelectric liquid crystal (PSFLC) cells with mechanical stability which is achievable by introducing photospacers in the cells. It was found that the mechanical st ability of the PSFLC cell was effected by introduction of photo spacers. We analyzed the dependence of mechanical stability and memory property on the density of photospacers in the PSFLC cell. The stability and memory properties of PSFLC Cells depending on photospacer density are discussed. 1. Introduction Recently, flexible displays have attracted much attention because they have remarkable advantages: thinner, lighter, non-breakable and conformable features. Flexible displays have various potential applications such as e-book and e-paper displays utilizing the distinct features. E-book and E-paper displays demand very low power consumption, so that bistable memory liquid crystal modes are required in case of flexible plastic LCDs for those application. Three kinds of memory LC modes have been developed; bistable nematic, bistable cholesteric and bistable FLC. Among them SSFLC as one of bistable FLC has big advantages such as low driving voltage, wide view angle and fast response time, SSFLC cells are, however, very weak against mechanical shock. Polymer stabilized FLC (PSFLC) has been developed to overcome the poor mechanical stability of SSFLC. PSFLC was known to have network structure that FLCs are oriented with smectic layer ordering in polymer network. The polymer network stabilizes the FLC orientation, which leads to improvement of mechanical stability of PSFLCD. A lot of studies have been done for the application of PSFLC to flexible $LCDs.^{[1{\sim}12]}$ However, it should be noted that PSFLC does not have sufficient mechanical stability for the particular applications such as smart card LCD, where LCD is highly bendable.Bead spacer was mainly used to maintain cell gap of conventional PSFLCDs. But the spacer density of it is not locally uniform in the cell, so that it is generally difficult that the PSFLCDs with bead spacers show sufficient mechanical stability. In order to more improve the mechanical stability of PSFLCDs, we introduced photospacers into PSFLCDs. In this paper, we describe the improvement of mechanical stability by introducing photospacers into PSFLCDs.

• Journal of the Korean Society of Radiology
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• v.6 no.1
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• pp.73-77
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• 2012

Recently, Interest to the photoconductor, which is used to flat form X-ray detector such as a-Se, $HgI_2$, PbO, CdTe, $PbI_2$ etc. is increasing. In this study, the film layer by using the photoconductive material with particle sedimentation was fabricated and evaluated. The quantization efficiency of the continuous X-ray with the 70 kVp energy bandwidth was analyzed by using the Monte Carlo simulation. With the results, the thickness of film with 64 % quantization efficiency was 180 ${\mu}m$ which is similar to the efficiency of 500 ${\mu}m$ a-Se film. And $HIg_2$ film has the high quantization efficiency of 74 % on 240 ${\mu}m$ thickness. The electrical characteristics of the 239 ${\mu}m$ $Hgl_2$ films produced by particle sedimentation were shown as very low dark current(under 10 $pA/mm^2$), and high sensitivity(19.8 mC/mR-sec) with 1 $V/{\mu}m$ input voltage. The SNR, which is influence to the contrast of X-ray image, was shown highly as 3,125 in low driving voltage on 0.8 $V/{\mu}m$. With the results of this study, the development of the low-cost, high-performance image detector with film could be possible by replacing the film produced by particle sedimentation instead to a-Se detector.

• Journal of Korea Society of Industrial Information Systems
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• v.18 no.5
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• pp.81-92
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• 2013

The satellite includes many release mechanisms such as solar array deployment, antenna deployment, cover to protect contamination in scientific equipment, pyro value of the propulsion subsytem, and bypass device in Li-Ion cell module. A drive the initiators is a critical to the successful mission because the initiators of release mechanism driving by the pyrotechnic circuit is operated in single short. The pyrotechnic circuit has to provide switching network for safety. A typical switching network has defect consisting of high current rating fire switch to handle switching transient current during fire the initiator. The pyrotechnic circuit is required some form of power conditioning to reduce the peak power demanded from the bus if the initiators are to be fired from the main bus. This paper design a pyrotechnic circuit synchronized to the fire-command to activate the fire switch to overcome use high current rating fire switch to handle switching transient current during fire the initiator. The pyrotechnic circuit provides a current limited widow pulse for fire current synchronized to the fire-command to insure that fire switch will only carry the current but never switch it. The current limited widow pulse for fire current can be possible to use low current rating and light mass switch in switching network. The current limit function in the pyrotechnic circuit reduces supply voltage to initiator and provides the effect of power conditioning function to reduce peak bus power. The pyrotechnic circuit to apply satellite development on geostationary orbit is verified the function by test in development model.

• Journal of the Korean institute of surface engineering
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• v.39 no.3
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• pp.93-97
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• 2006

Polymer light emitting diodes (PLEDs) are expected to be commercialized as next generation displays by advantages of the fast response time, low driving voltage and easy manufacturing process for large sized flexible display. Generally, the electrical and optical properties of PLEDs are affected by the surface conditions of transparent electrode. The PLED devices with ITO/PEDOT:PSS/PVK/PFO-poss/LiF/Al structures were prepared by using the spin coating method. For this, PEDOT:PSS(poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)) Al 4083 and PVK(N-vinylcabozole) were used as hole injection and transport layers. The PFO-poss(poly(9,9-dioctylfluorene)) was used as the emitting layer. The dependence of $O_2$ plasma treatment of ITO electrode on the electrical and optical properties of PLEDs were investigated. The sheet resistances increased slightly with an improved surface roughness of ITO electrode as the RF power increased during $O_2$ plasma treatment. The PLED devices prepared on the ITO/Glass substrates, which were plasma-treated at 40 watt in RF power for 30 seconds under 40 mtorr $O_2$ pressure, showed the maximum external emission efficiency of 0.86 lm/W and the maximum luminance of $250\;cd/m^2$, respectively. The CIE color coordinates are ranged $X\;=\;0.13{\sim}0.18$ and $Y\;=\;0.10{\sim}0.16$, showing blue color. emission.