• Polymer(Korea)
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• v.31 no.6
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• pp.474-478
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• 2007

Polymer substrate materials with low dielectric loss were obtained by fabricating the composite using dicyclopentadienyl bisphenol cyanate ester oligomer and polyphenylene ether (PPE). From the analysis of the curing reaction of oligomer and catalyst, it was observed that the optimum amount of catalyst was 0.02 phr of Zn content. It was applied to the fabrication of polymer composite. By changing oligomer/PPE weight ratio, the peel strength and the gel content of the fabricated composites were measured, and then, the dielectric constant and the dissipation factor were measured in the GHz frequency range. The amount of PPE affected the peel strength and the dielectric properties of composites. However, the amount of catalyst did not affect them at all. Resulting from all experiments, we obtained polymer composite laminates haying the peel strength of above 1 kN/m and the low dissipation factor of 0.004 at 1 GHz.

• Journal of the Korean Ceramic Society
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• v.44 no.2 s.297
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• pp.110-115
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• 2007

The effects of $TiO_2$ in the glasses on the shrinkage and dielectric properties of BNT-glass composites have been investigated. Without $TiO_2$ addition, BNT-glass composite showed two humps in the shrinkage curve, which are related with crystallization of $BaTi(BO_3)_2\;and\;Bi_4Ti_3O_{12}$. However, the increase of $TiO_2$ addition resulted in the decrease of 2nd hump in the shrinkage. The increased dielectric constant with $TiO_2$ addition might be due to the reduced crystallization of $Bi_4Ti_3O_{12}$. A dielectric constant of 52, a quality factor of 5088 GHz, and a temperature coefficient of resonant frequency of $-0.16ppm/^{\circ}C$ were obtained for a specimen containing $TiO_2$-added glasses, without sacrificing the benefits of high ${\varepsilon}_r$ and low TCF of BNT ceramics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.208-209
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• 2006

Sinterability and microwave dielectric properties of the $Zr1-x(Zn_{1/3}Nb_{2/3})xTiO_4$(x=4, 6) system ceramics have been investigated as functions of zinc-borosilicate(ZBS) glass contents and amount of $Zn_{1/3}Nb_{2/3}O_2$ substitution with a view to applying the composition to LTCC technology. The addition of 25 wt% ZBS glass ensured successful sintering below $925^{\circ}C$. With increasing ZBS glass and $Zn_{1/3}Nb_{2/3}O_2$ contents increased dielectric constant and sinterability but addition ZBS glass decreased the quality factor significantly due to the formation of an excessive liquid and second phases. The sintered $Zr4(Zn_{1/3}Nb_{2/3})6TiO_4$ system ceramics at $925^{\circ}C$ with 25 wt% ZBS glass demonstrated 27.7 in dielectric constant (${\varepsilon}_r$), 3,850 m quality factor($Q{\times}f_0$), and +6 ppm/$^{\circ}C$ in temperature coefficient of resonant frequency($\tau_f$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.298-298
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• 2007

Influence of $TiO_2$ on the dielectric properties of the $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic with 7 wt% zinc borosilicate(ZBS) glass was investigated as a function of the $TiO_2$ contents with a view to applying this system to LTCC technology. The $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic addition of 7 wt% ZBS glass ensured successful sintering below $900^{\circ}C$. But, TCF of $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic is large negative values, respectively, it is necessary to adjust to zero TCF for practical applications Therefore, the addition of materials having positive TCF, such as $TiO_2$, might be an effective method for the improvement. In general, increasing addition of $TiO_2$ increased dielectric constant and TCF but it decreased the sinterability and $Q{\tiems}f$ value significantly due to the dielectric property and high sintering temperature of $TiO_2$. $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic with 7 wt% ZBS glass and then addition 0.5 wt% $TiO_2$ sintered at $900^{\circ}C$ demonstrated 42 in the dielectric constant(${\varepsilon}_r$), 1,000 GHz in the $Q{\times}f$ value, and $10{\pm}5\;ppm/^{\circ}C$ in the temperature coefficient of resonant frequency(${\tau}_f$).

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.77-79
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• 2012

The paper deals with the approximate analysis of printed antenna like superconductor antenna. Analysis of antenna with polarization current in dielectric layer using Moment method. This approximation is very useful for printed antenna on dielectric plane with low dielectric constant. In this paper, we compared numerical results of this method with measurement results.

• Journal of the Korean Applied Science and Technology
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• v.23 no.3
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• pp.238-242
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• 2006

Polyimide is a well-known organic dielectric material, which has not only high chemical and thermal stability but also good electrical insulating and mechanical properties. In this research, the electric conduction mechanism of PI Ultra-Thin Films was investigated at room temperature. At low electric field, ohmic conduction $(I{\propto}V)$ was observed and the calculated electrical conductivity was about $4.23{\times}10^{-15}{\sim}9.81{\times}10^{-15}\;S/cm$. At high electric field, nonohmic conduction $(I{\propto}V^2)$ was observed and the conduction mechanism was explained by space charge limited region effect. The dielectric constant of PI Ultra-Thin Films was about 7.0.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.64-70
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• 1995

We discussed the thermal analysis for a recording media with the variation of the laser pulse duration, the laser power and the temperature distribution in order to optimize the Te-based antireflection structure from the computer calculations. In the case that the radial heat diffusion is negligible, we can calculate the maximum temperature of the recording layer at the center of the spot by the Simple Model. The temperature profile of the recording layer is obtained from the Numerical Model by considering the total specific heat and the latent heat. As a result, the effect of the heat sinking acting as a thermal loss for the hole formation could be minimized by introducing the pulse with the hole formation duration(.tau.) below the thermal time constant(.tau.$_{D}$) of a dielectric layer. These requirments can be satisfied by using the dielectric thickness of the 2nd ART(Anti-Reflection Trilayer) condition or the dielectric materials with a low thermal diffusivity.y.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2004.10a
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• pp.175-179
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• 2004

Since the electromagnetic properties of fiber reinforced polymeric composites can be tailored effectively by adding small amount of electromagnetic powders to the matrix of composites, they are plausible materials for fabricating the radar absorbing structures (RAS) of desired performance. In order to design the effective electromagnetic wave (EM) absorber with the fiber reinforced polymeric composites, the electromagnetic characteristics with respect to the constituents of the composite should be available in the target frequency band. In order to describe the dielectric behavior of low loss unidirectional fiber reinforced composite, theoretical models and mixture equations for estimating its dielectric constant were proposed with respect to the fiber, matrix volume fractions and fiber orientations, and verified by the experiments. From the investigation, it was found that the suggested binary mixture rules agreed well with the experimental results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.123-126
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• 1994

We discussed the thermal analysis for recording media with the variation of the laser pulse duration and the power and the temperature distribution for the optimized Te-based antireflection structure by using the computer calculations. If the radial diffusion of heat is negligible, we can calculate the maximum temperature at the spot center in recording layer by Simple Method, and the temperature profile considering the specific heat and the latent heat by Numerical Method. As a result, the effect of the heat sinking which acted as a loss for the hole formation can be minimized by introducing the pulse of the hole formation duration( $\tau$ ) shorter than the thermal time constant( $\tau$$\sub$D/) of dielectric layer. This requirments can be satisfied as using the dielectric thickness of the 7nd ART condition or the dielectric materials with low thermal diffusivity.

• Electrical & Electronic Materials
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• v.11 no.10
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• pp.94-99
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• 1998

Suitable replacement materials for ultrathin SiO2 in deeply scaled MOSFETs such as lattice polarizable films, which have much higherpermittivities than SiO2, have bandgaps of only 3.0 to 4.0 eV. Due to these small bandgaps, the reliability of these films as a gate insulator is a serious concern. Ramped voltage, time dependent dielectric breakdown, and hot carrier effect measurements were done on 190 layers of TiO2 which were deposited through the metal-organic chemical vapor deposition of titanium tetrakis-isopropoxide (TTIP). Measurements of the high and low frequency capacitance indicate that virtually no interface state are created during constant current injection stress. The increase in leakage upon electrical stress suggests that uncharged, near-interface states may be created in the TiO2 film near the SiO2 interfacial layer that allow a tunneling current component at low bias.