• Title/Summary/Keyword: Low dielectric constant

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A study on electrical characteristics of ceramics capacitor for temperature compensation (온도보상용 세라믹 커패시터의 전기적 특성에 관한 연구)

  • 홍경진;정우성;김태성;이은학;이준웅
    • Electrical & Electronic Materials
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    • v.8 no.5
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    • pp.640-647
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    • 1995
  • In this study, the BaTiO$\sub$3/ capacitor add to MnO$\sub$2/ like depressor and shifter were investigated for temperature or voltage compensation by structural and electrical analysis. The relative density of BCTM, generating poly crystall and formation of lattice defect, has a 90[%] over as the CaTiO$\sub$3/ come out to control grain size. The current density of BCTM2 increased non-ohmic in high-electric field but that BCTM3 and BCTM4 had a few changing. The BCTM3 and BCTM4 unformated grain boundary shown temperature compensation properties, so that the dielectric constant was low value. The curie point was near 140[.deg. C] in BCTM1 and BCTM4, but BCTM3 and BCTM4 not shown the curie point. It is found that the charging energy of BCTM4 was changed 6[%] according to rising temperature from room temperature to 417[K]. The formation of BaMnO$\sub$3/ was low dielectric constant to change frequency and temperature.

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Estimation of Electric Properties of Insulating Silicone Rubbers Added Reinforcing Fillers (보강성 충전제를 첨가한 절연용 실리콘 고무의 전기 특성 평가)

  • Lee, Sung-Ill
    • Elastomers and Composites
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    • v.32 no.5
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    • pp.309-317
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    • 1997
  • Estimation of the dielectric properties of insulating silicone rubbers added reinforcing fillers $(SiO_2,\;0{\sim}140phr)$ are very important to investigate the polymer structure. The characteristies of the dielectric absorption in insulating silicone rubbers were studied in the frequency range from 30Hz to 1MHz at the temperature range from $0{\sim}170^{\circ}C$. In the case of non-filled specimen, the dielectric loss is due to the syloxane which is the main chain of silicone rubber at the low temperature below $50^{\circ}C$ and the frequency at 330Hz, and is due to methyl and vinyl radical over the frequency of 1MHz. It is confirmed that the methyl radical or the vinyl radical becomes thermal oxidation at the high temperature over $100^{\circ}C$ and then the dielectric disperssing owing to the carboxyl radical Is appeared. In the case of filled specimen, the dielectric constant is in creased with the additives of reinforcing fillers due to the effect of interfacial polarization explained by MWS(Maxwell-Wagner-Sillars)'s law. The dielectric loss is decreased by the disturbance of reinforcing fillers that is permeated between networks.

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Dielectric properties of $BiNbO_4$ dielectric ceramics for multilayer microwave device (적층형 마이크로파 소자용 $BiNbO_4$ 유전체 세라믹스의 유전특성)

  • 박정흠;장낙원;윤광희;최형욱;박창엽
    • Electrical & Electronic Materials
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    • v.9 no.9
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    • pp.900-905
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    • 1996
  • We have investigated dielectric properties of low fired ceramics BiNbO$_{4}$ containing 0.05[wt%] V$_{2}$O$_{5}$ and x[wt%l Cr$_{2}$O$_{3}$ (x=0, 0.2, 0.4, 0.8, 1.2). By substituting Cr for Bi, dielectric constant .epsilon.$_{r}$ and quality factor Q.f increased and temperature coefficient of resonant frecquency .tau.$_{f}$ changed to positive value. In the composition of BiNbO$_{4}$+0.05 [Wt%] V$_{2}$O$_{5}$+0.8[wt%]Cr$_{2}$O$_{3}$ sintered at 960[.deg. C], we could obtain microwave dielectric properties of .epsilon.$_{r}$=49, Q.f.simeq.3000[GHz](at 4.8[GHz]), .tau.$_{f}$.simeq.0[ppm/.deg. C]. As the above ceramics can be sintered near 960[.deg. C], it is applicable to multilayer microwave device with Ag conductor.tor.tor.tor.

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The 33-mode Dielectric and Piezoelectric Properties of PIN-PMN-PT Single Crystal under Stress and Electric Field (압축하중 및 전계 인가에 따른 PIN-PMN-PT 단결정의 33-모드 유전 및 압전특성)

  • Lim, Jae Gwang;Park, Jae Hwan;Lee, Jeongho;Lee, Sang Goo
    • Journal of the Microelectronics and Packaging Society
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    • v.27 no.4
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    • pp.91-96
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    • 2020
  • The 33-mode dielectric and piezoelectric properties of Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 piezoelectric single crystals were measured under large electric field and compressive stress. The phase transition from the low temperature rhombohedral to the high temperature tetragonal structure was observed in the range of 110~140℃, and the Curie temperature changing to the cubic structure was about 165℃. The polarization change according to the compressive stress and electric field was measured. Relative dielectric constant was calculated from the slope of the polarization curve applied to the electric field, and the calculated relative dielectric constant increased as the applied stress increased, and the relative dielectric constant decreased as the applied electric field increased. The strain according to the compressive stress and electric field change was measured, the piezoelectric constant was calculated from the slope of the curve, and the phase transition according to the application of pressure was confirmed. In the case of practical application as an underwater or medical ultrasonic actuator, it is necessary to properly design the magnitude of the compressive stress applied to the device and the DC bias in order to maintain linear driving.

Dispersion and Flocculation Behavior of Metal Oxide in Organic Solvent

  • Fujii, Katsuya;Yamamoto, Hideki;Shibata, Junji
    • Proceedings of the IEEK Conference
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    • 2001.10a
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    • pp.353-356
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    • 2001
  • The relation between the flocculation and dispersion of metal oxide powders and the properties of solvents, such as dielectric constant and solubility parameter, was investigated for TiO$_2$, $Al_2$O$_3$and Fe$_2$O$_3$particles. The particle size and median diameter of these metal oxides were measured in many organic solvents, from which the effect of solvents on the flocculation and dispersion of metal oxide powders was considered. The metal oxide powders of TiO$_2$, $Al_2$O$_3$and Fe$_2$O$_3$tend to disperse in a solvent of higher polarity, whereas they are apt to flocculate in a solvent of low dielectric constant, because the Hamaker constant between the particles becomes larger in such a solvent. There we, however, some solvents that do not obey these tendencies. It is possible to evaluate the flocculation and dispersion of these metal oxide powders in many solvents by using numeral balances of Hansen’s three-dimensional solubility parameter (f$_{d}$, f$_{p}$ and f$_{h}$). There exists a solvent giving the optimal dispersion for each metal oxide, and the optimal dispersion point of f$_{d}$, f$_{p}$ and f$_{h}$ is determined by the combination of various metal oxide powders and solvents.nts.nts.nts.

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The Effect of PNN Substitution on the Piezoelectric Properties of Low Temperature Sintering PMN-PZT Ceramics (PNN치환이 저온소결 PMN-PZT 세라믹스의 압전특성에 미치는 영향)

  • Lee, Sang-Ho;Yoo, Ju-Hyun;Hwang, Jung-Min;Lee, Chung-Ho;Jeong, Yeong-Ho;Lee, Hyung-Gyu;Kang, Hyung-Won
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.66-67
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    • 2005
  • In this study, in order to develop multilayer piezoelectric actuator, PMN-PNN-PZT ceramics were fabricated using $Li_2CO_3-Na_2CO_3$ as sintering aids and their piezoelectric and dielectric characteristics were investigated with the function of PNN substitution. With increasing PNN substitution, dielectric constant(${\varepsilon}r$), electromechanical coupling factor(kp), and piezoelectric d constant($d_{33}$) were increased at 10~12[mol%] PNN substitution and then decreased at all sintering temperature. With increasing PNN substitution, phase changed from tetragonal to rhombohedral at [10~12mol%] PNN substitution. At the 12[mol%] PNN substituted PMN-PZT composition ceramic sintered at 950[$^{\circ}C$], density, ${\varepsilon}r$, kp, $d_{33}$ and Qm showed the optimum value of 7.79[$g/cm^3$], 1160, 0.599, 419[pC/N) and 894, respectively for multilayer piezoelectric actuator application.

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Fabrication and Properties of D-Glass Fiber with Low Dielectric Constant (저유전율을 가지는 D-Glass Fiber의 제조 및 특성)

  • Jeong, Bora;Lee, Ji-Sun;Lee, MiJai;Lim, Tae-Young;Lee, Youngjin;Jeon, Dae-Woo;Shin, Dongwook;Kim, Jin-Ho
    • Korean Journal of Materials Research
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    • v.28 no.4
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    • pp.254-259
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    • 2018
  • General D-glass(Dielectric glass) fibers are adaptable to PCBs(Printed circuit boards) because they have a low dielectric constant of about 3.5~4.5. However, very few papers have appeared on the physical characteristics of D-glass fibers. D-glass fibers were fabricated via continuous spinning process using bulk D-glass. In order to fabricate the D-glass, raw materials were put into a Pt crucible, melted at $1650^{\circ}C$ for 2 hrs, and then annealed at $521{\pm}10^{\circ}C$ for 2 hrs. We obtained transparent clear glass. The transmittance and adaptable temperature for spinning of the bulk marble glass were characterized using a UV-visible spectrometer and a viscometer. Continuous spinning was carried out using direct melting spinning equipment as a function of the fiberizing temperature in the range of $1368^{\circ}C$ to $1460^{\circ}C$, while the winder speed was between 100 rpm and 200 rpm. We investigated the physical properties of the D-glass fibers. The average diameters of the glass fibers were measured by optical microscope and FE-SEM. The average diameters of the D-glass fibers were 21.36 um at 100 rpm and 34.06 um at 200 rpm. The mechanical properties of the fibers were confirmed using a UTM(Universal materials testing machine). The average tensile strengths of the D-glass fibers were 467.03 MPa at 100 rpm and 522.60 MPa at 200 rpm.

Low temperature and dieletric properties of $Al_2O_3$/CAS glass composites by dose and particle size of $Al_2O_3$ filler and sintering time ($Al_2O_3$ 충전제의 함량, 입도 및 소결시간에 따른 $Al_2O_3$/CAS glass 복합체의 저온 소결 및 유전 특성)

  • Kim, Kwan-Soo;Kim, Myung-Soo;Yoon, Sang-Ok;Park, Jong-Guk;Kim, So-Jung;Kim, In-Tae;Kim, Shin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.176-176
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    • 2009
  • Influences of dose and particle size of $Al_2O_3$ filler and sintering time on the dielectric properties of $Al_2O_3$ filler/CaO-$Al_2O_3-SiO_2$ (CAS) glass composites were investigated with a view to applying the composites to the substrate material in low temperature co-firing ceramic (LTCC) technology. The increased addition of $Al_2O_3$ filler with the particle size of 1 ${\mu}m$ monotonically decreased the density of the sintered specimen at a given temperature, while sintering of the 10 wt% $Al_2O_3$ added specimen at $925^{\circ}C$ for 2 h demonstrated 96.0 % of the relative density, dielectric constant of 6.34, and quality factor of 2,760 GHz. As for the influence of the particle size of the $Al_2O_3$ filler, there existed an optimum particle size (30 ${\mu}m$) to ensure successful densification (96.5 %) of the 10 wt% $Al_2O_3$/CAS composites at $925^{\circ}C$ for 2 h, at which condition the specimen demonstrated dielectric constant of 5.45 and quality factor of 3,740 GHz. When the influence of the sintering time of the 10 wt% $Al_2O_3$) (30 ${\mu}m$) added specimen was investigated at the sintering temperature of $925^{\circ}C$, an overly long sintering time degraded dielectric properties due to the over-sintering and the significant growth of the second phase such as anorthite, while the sintering for 4 h demonstrated 96.58 % of the relative density, dielectric constant of 5.4, and quality factor of 4,050 GHz. These results demonstrate the feasibility of the investigated material as the substrate material in LTCC technology.

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Microwave Dielectric Properties of Ultra-Low Temperature Co-firable Ba3V4O13-BaV2O6 Ceramics (Ba3V4O13-BaV2O6계 초저온 동시소성 세라믹스의 마이크로파 유전 특성)

  • Yoon, Sang-Ok;Hong, Seoyoung;Cho, Hyung-Hwan;Kim, Shin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.34 no.5
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    • pp.342-347
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    • 2021
  • Phase evolution, sintering behavior, microstructure, and microwave dielectric properties of (1-x) mol Ba3V4O13 - (x) mol BaV2O6 system were investigated. The sintered specimens of all compositions consisted of Ba3V4O13 and BaV2O6, and no secondary phase was observed. As x increased, the linear shrinkage decreased to the composition of x=0.5, and then increased again, implying that Ba3V4O13 and BaV2O6 phases interfered mutually with each other during sintering. All compositions showed a dense microstructure with a large grain growth. Cracks were observed in some compositions because of the relatively high sintering temperature of 620~640℃. As x increased, the dielectric constant increased, while the quality factor was maintained from about 50,000 GHz to about 70,000 GHz up to the composition of x=0.9, and then decreased to 20,987~27,180 GHz at the composition of x=1.0. As x increased, the temperature coefficient of the resonance frequency showed a (+) value from a (-) value. The dielectric constant, the quality factor, and the temperature coefficient of resonant frequency of x=0.7 composition sintered at 640℃ for 4 hours were 10.61, 71,126 GHz, and -4.9 ppm/℃, respectively. This composition showed a good chemical compatibility with Al powder, indicating that the Ba3V4O13-BaV2O6 ceramics are a candidate material for ULTCC (Ultra-Low Temperature Co-fired Ceramics) applications.

Microwave Dielectric Properties of Low Temperature Fired (${Pb_{0.45}}{Ca_{0.55}}$) [(${Fe _{0.5}}{Nb_{0.5}}$)$_{0.9}{Sn_{0.1}}$]$O_3$Ceramics with Various Additives

  • Ha, Jong-Yoon;Park, Ji-Won;Yoon, Seok-Jin;Kim, Hyun-Jai;Yoon, Ki-Hyun
    • Journal of the Korean Ceramic Society
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    • v.38 no.7
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    • pp.597-601
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    • 2001
  • The effect of CuO, $B_2$ $O_3$, $V_2$ $O_{5}$ and CuO-B $i_2$ $O_3$additives on microwave dielectric properties of (P $b_{0.45}$C $a_{0.55}$) [(F $e_{0.5}$N $b_{0.5}$)$_{0.9}$S $n_{0.1}$] $O_3$(PCFNS) were investigated. The PCFNS ceramics were sintered at 11$65^{\circ}C$. To decrease the sintering temperature for using as a low-temperature co-firing ceramics (LTCC), CuO, $B_2$ $O_3$, $V_2$ $O_{5}$ and CuO-B $i_2$ $O_3$were added to the PCFNS. As the content of CuO increased, the sintered density and dielectric constant increased and the temperature coefficient of resonance frequency ($\tau$$_{f}$) shifted to the positive value. When the CuO-B $i_2$ $O_3$were added, dielectric properties were $\varepsilon$$_{r}$ of 83, Q. $f_{0}$ of 6085 GHz, and $\tau$$_{f}$ of 8ppm/$^{\circ}C$ at a sintering temperature of 100$0^{\circ}C$. The relationship between the microstructure and properties of ceramics was studied by X-ray diffraction and scanning electron microscopy.icroscopy.y.icroscopy.y.

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