• Transactions on Electrical and Electronic Materials
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• 제10권3호
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• pp.80-84
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• 2009

The microstructure, voltage-current, capacitance-voltage, and dielectric characteristics of CCT doped Zn/Pr-based varistors were investigated at different sintering temperatures. As the sintering temperature increased, the average grain size increased from 4.3 to 5.1 ${\mu}m$ and the sintered density was saturated at 5.81 g $cm^{-3}$. As the sintering temperature increased, the breakdown field decreased from 7,532 to 5,882 V $cm^{-1}$ and the nonlinear coefficient decreased from 46 to 34. As the sintering temperature increased, the donor density, density of interface states, and barrier height decreased in the range of (9.06-7.24)${\times}10^{17}\;cm^{-3}$, (3.05-2.56)${\times}10^{12}\;cm^{-2}$, and 1.1-0.95 eV, respectively. The dielectric constant exhibited relatively low value in the range of 529.1-610.3, whereas the $tan{\delta}$ exhibited a high value in the range of 0.0910-0.1053.

• 방사선산업학회지
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• 제4권3호
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• pp.285-288
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• 2010

Polyimide films have excellent thermal stability, reliable mechanical properties and low dielectric constant. Therefore, this material is widely used in many industrial fields such as microelectronics, flexible circuits, semiconductor products and aerospace materials. In space applications, earth-orbiting hardware operates in environments that generally include neutral particles, charged particles such as trapped protons and electrons, solar protons, and cosmic rays. Under these conditions, polyimide films were changed in the optical, electrical and mechanical properties. Therefore, in this study, we evaluated the effects of electron beam irradiation on polyimide. The O-H functional groups were created on the polyimide film surface in the results of FT-IR spectra. And it was found that the dielectric constants were changed as a function of electron beam dose.

• 한국정보전자통신기술학회논문지
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• 제16권4호
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• pp.173-179
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• 2023

본 논문에서는 4세대 VNAND 공정으로 만들어진 Peri 소자의 스트레스 영역 별 time-dependent dielectric breakdown(TDDB) 열화 메커니즘을 분석하고, 기존의 수명 예측 모델보다 더 넓은 신뢰성 평가 영역에서 신속성과 정확성을 향상시킬 수 있는 수명 예측 보완 모델을 제시하였다. SiON 절연층 nMOSFET에서 5개의 Vstr 조건에 대해 각 10번의 constant voltage stress(CVS) 측정 후, stress-induced leakage current(SILC) 분석을 통해 저전계 영역에서의 전계 기반 열화 메커니즘과 고전계 영역에서의 전류 기반 열화 메커니즘이 주요함을 확인하였다. 이후 Weibull 분포로부터 time-to-failure(TF)를 추출하여 기존의 E-모델과 1/E-모델의 수명 예측 한계점을 확인하였고, 각 모델의 결합 분리 열화 상수(k)를 추출 및 결합하여 전계 및 전류 기반의 열화 메커니즘을 모두 포함하는 병렬식 상호보완 모델을 제시하였다. 최종적으로 실측한 TDDB 데이터의 수명을 예측할 시, 기존의 E-모델과 1/E-모델에 비해 넓은 전계 영역에서 각 메커니즘을 모두 반영하여 높은 스트레스에서 신속한 신뢰성 평가로 더 정확한 수명을 예측할 수 있음을 확인하였다.

• KIEE International Transactions on Electrophysics and Applications
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• 제4C권2호
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• pp.73-76
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• 2004

0-3 PbTiO$_3$/P(VDF/TrFE) nanocomposite thin films for passive pyroelectric infrared sensors were fabricated by a two-step spin coating technique. 65wt% VDF and 35 wt% TrFE was formed into a P(VDF/TrFE) powder. Nano size PbTiO$_3$ powder was used. 0-3 connectivity of PbTiO$_3$/P(VDF/TrFE) composite film was successfully achieved and observed using SEM photography. The dielectric constant and pyroelectric coefficient were measured and compared with P(VDF/TrFE). A very low dielectric constant (13.48 at 1KHz and sufficiently high pyroelectric coefficient (3.101 nC/$\textrm{cm}^2$ㆍk at 5$0^{\circ}C$) were measured. This nanocomposite can be used for a new pyroelectric infrared sensor to achieve better performance.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.1254-1258
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• 2007

Electro-active polymer (EAP), one of the smart materials, is a new alternative offering ultra-precise movements and bio-compatibility. We present the results of the design, fabrication, and performance evaluation of a fabricated diaphragm-type polymer actuator using segmented polyurethane(SPU). This paper illustrates the relationship between the elastic modulus and maximum deflection as a key property of the Maxwell stress effect and also presents the relationship between the dielectric constant and maximum deflection as a key property of the electrostriction effect, especially in polymer actuators using SPU. A diaphragm-type actuator was used to induce an equation of the vertically distributed load by using a fully clamped circular plate as the boundary condition. To verify the equation, the results were compared to the data measured from load cell. In the near future, a low-cost check valves and bio-robot can be applied by its actuators.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.487-488
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• 2008

SiOC films containing alkyl groups have a low dielectric constant because of the interaction between the C-H hydrogen bonds and the oxygen of high electro-negative atom. The Si-$CH_3$ in a void is broken by the $O_2$, therefore the strength of CH bond in Si-O-O-$CH_3$ bond increases. The Si-O-O-$CH_3$ bond is broken by nucleophilic attack due to Si atom, again. The elongation of C-H bond causes the red shift, and the compression of C-H bond causes the blue shift. Among these chemical shifts, the blue shift from $1000\;cm^{-1}$ to $1250\;cm^{-1}$ was related with the formation of pores. If the oxygen is deficient condition, the methylradicals of the electron-rich substitution group terminate easily the Si-O-Si cross-link, and the pore is originated from the cross-link breakdown due to much methyl radicals of Si-$CH_3$. The dielectric constant of the films decreases due to pore generation.

• 한국재료학회지
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• 제17권4호
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• pp.236-238
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• 2007

[ 0-3PbTiO_3/P$ ](VDF/TrFE) nanocomposites thin films for passive pyroelectric infrared sensor have been fabricated by two-step spin coating technique. 65 wt% VDF and 35 wt% TrFE was formed to a P(VDF/TrFE) poder Nano size $PbTiO_3$ powder was used. 0-3 connectivity of $PbTiO_3$(VDF/TrFE) composites film is achieved and also observed by SEM photography successfully. The dielectric constant, and pyroelectric coefficient measured and compared with P (VDF/TrFE). A very low dielectric constant (13.48 at 1 kHz) and high enough pyroelectric coefficient (3.101 $nC/cm^2$.k at $50^{circ}C$) neasured. This nanocomposites can be used for a new pyroelectric infrared sensor for better performance.

• 한국세라믹학회지
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• 제30권8호
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• pp.635-642
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• 1993

To obtain a higher dielectric constant material, we investigated Ca substitution for Pb in PbZrO3. In this study, the four mixtures of (Pb0.68Ca0.32)ZrO3, (Pb0.65Ca0.37)ZrO3, (Pb0.63Ca0.37)ZrO3, and (Pb0.60Ca0.40)ZrO3 were prepared by coprecipitation reaction of Pb(NO3)2, ZrOCl2, and CaCl2 with (NH4)2CO3 and NH4OH in aqueous solution. The (Pb1-xCax)ZrO3 with different x mole fractions (x=0.35, 0.37) showed not only high dielectric constant, but also high Q values and low temperature coefficient of the capacitance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.347-349
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• 1999

We have fabricated insulating thin films using p-hexadecoxyphenol(p-Hp) that was formed phenol-formaldehyde resin of crosslinked structure from reaction with formaldehyde by LB technique. For fabricated MIM device, the possibility for insulating layers of electronic were investigated by electrical properties of their LB films according to crosslinking of LB films current-voltage (I-V) properties and frequency-capacitance (C-F) characteristics. We have provided evidence for the high insulating performance of phenol-formaldehyde thin films by the LB method. Conductivity of their LB films was as follows: pure water > 1 % aq. Formaldehyde > heat treatment, in the current-voltage (I-V) characteristics. It is demonstrated that insulation properties of crosslinked p-HP LB films were improved. In capacitance-frequency properties, the heat-treated p-HP LB films for crosslinking showed a low relative dielectric constant.

• 한국전기전자재료학회논문지
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• 제20권1호
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• pp.19-24
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• 2007

The effects of $B_2O_3-SiO_2-R(R;CaO,\;BaO,\;ZnO,\;Bi_2O_3)$ borosilicate glass system on the sintering behavior and microwave dielectric properties of ceramic/glass composites were investigated as functions of modifier, glass addition ($30{\sim}50\;vol%$) and sintering temperature ($500{\sim}900^{\circ}C$ for 2 hrs). The addition of 50 and 45 vol% glass ensured successful sintering below $900^{\circ}C$. Sintering characteristics of the composites were well described in terms of modifier. Borosilicate glass enhanced the reaction with $Al_{2}O_{3}$ to form pores, second phases and liquid phases, which was responsible to component of modifier. Dielectric constant (${\varepsilon}_{r},\;Q{\times}f_{o}$) and temperature coefficient of resonant frequency (${\tau}_{f}$) of the composite with 50 and 45 vol% glass contents($B_{2}O_{3}:SiO_{2}:R=25:10:65$) demonstrated A-CaBS(7.8, 2,560 GHz, -81ppm/$^{\circ}C$), A-BaBs(5.8, 3.130 GHz, -64 ppm/$^{\circ}C$), A-ZnBS(5.7, 17,800 GHz, -21 ppm/$^{\circ}C$), A-BiBs(45 vol% glass in total)(8.3, 2,700 GHz, -45 ppm/$^{\circ}C$) which is applicable to substrate requiring an low dielectric properties.