• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.265-265
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• 2007

In the present work, we have studied low temperature sintering and microwave dielectric properties of $ZnAl_2O_4$-zinc borosilicate (ZBS, 65ZnO-$25B_2O_3-10SiO_2$) glass composites. The focus of this paper was on the improvement of sinterability, low dielectric constant, and on the theoretical proof regarding of microwave dielectric properties in $ZnAl_2O_4$-ZBS glass composites, respectively. The $ZnAl_2O_4$ with 60 vo1% ZBS glass ensured successful sintering below $900^{\circ}C$. It is considered that the non-reactive liquid phase sintering (NPLS) occurred. In addition, $ZnAl_2O_4$ was observed in the $ZnAl_2O_4$-(x)ZBS composites, indicating that there were no reactions between $ZnAl_2O_4$ and ZBS glass. $ZnB_2O_4\;and\;Zn_2SiO_4$ with the willemite structure as the secondary phase was observed in the all $ZnAl_2O_4$-(x)ZBScomposites. In terms of dielectric properties, the application of the $ZnAl_2O_4$-(x)ZBS composites sintered at $900^{\circ}C$ to LTCC substrate were shown to be appropriate; $ZnAl_2O_4$-60ZBS (${\varepsilon}_r$= 6.7, $Q{\times}f$ value= 13,000 GHz, ${\tau}_f$= -30 ppm/$^{\circ}C$). Also, in this work was possible theoretical proof regarding of microwave dielectric properties in $ZnAl_2O_4$-(x)ZBS composites.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.2
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• pp.35-40
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• 2010

The variations of dielectric properties of $Ta_2O_5-SiO_2$ continuous composition spread thin films prepared by off-axis radio-frequency magnetron sputtering were investigated. The dielectric maps of dielectric constant and loss were plotted via 1500 micron-step measuring. The specific points showing superior dielectric properties of high dielectric constant (k~19.5) and loss (tan${\delta}$<0.05) at 1 MHz were found in area of the distance of 16 mm and 22 mm apart from $SiO_2$ side in $75{\times}25mm^2$ sized Pt/Ti/$SiO_2$/Si(100) substrates.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.626-633
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• 1998

For the fabrication of low temperature cofirable glass/ceramic with high dielectric constant, crystallizing glass [$SiO_2-TiO_2-RO (RO:BaO, CaO:SrO)$] was formed. The glass/ceramic composites were made by mixing this glass and alumina ceramic as filler, and its characteristics was investigated. With this glass compositon, it was possible to fabricate the glass which could be crystallized under $900^{\circ}C$. And it was found that the crystallizing temperature was changed in accordance with the composition of RO in glass. By adding $Bi_2O_3$ as flux, using $Al_2O_3$ as filler and sintering at $860^{\circ}C$, low temperature cofirable glass/ceramic with high dielectric constant was fabricated. The density of that composites was 3.96 g/$\textrm{cm}^3$, dielectric constant was 17 and Q. f was 600.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.960-964
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• 2004

[ $Ba_2NaNb_5O_{15}$ ](BNN) thin films have been prepared by the ion beam sputter deposition (IBSD) method on Pt coated Si substrate at temperature as low as $600^{\circ}C$ XRD, SEM were used to investigate the crystallization and microstructure of the films. It was found that the films were crack-free and uniform in microstructure. The electric properties of thin films were carried out by observation of D-E hysteresis loop, dielectric constant and leakage current. It was found the deposition rate strongly influenced the phase formation of the films, where the phase of $BaNb_2O_6$ was always formed when the deposition rate was high. However, the single phase (tungsten bronze structure ) BNN thin film was obtained with the deposition rate as low as $22{\AA}/min$. The remanent polarization Pr and dielectric constant are about 1-2 ${\mu}C/cm^2$ and $100\sim200$, respectively. It was also founded the electric properties of thin films were influenced by the deposition rate. The Pr and dielectric constant of films increased with the decrease of deposition rate. The effects of annealing temperature and annealing time to the crystallization behavior of films were studied. The crystallization of thin film started at about $600^{\circ}C$. The adequate crystallization was gotten at the temperature of $650^{\circ}C$ when the annealing time is 0.5 hour or at the temperature of $600^{\circ}C$ when the annealing time is long as 6 hours.

• Journal of the Korean Vacuum Society
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• v.21 no.4
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• pp.193-198
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• 2012

In this study, we have fabricated the polymer insulator and diamond-like carbon (DLC) thin films by using plasma enhanced chemical vapor deposition methods. we fabricated the DLC films with various thicknesses as the passivation layer on plasma polymer and investigated the structural, physical, and electrical properties of DLC/plasma polymer films. The plasma polymer synthesized in this work had the low leakage current and low dielectric constant. The values of hardness and elastic modulus in DLC/plasma polymer films are increased, and the value of rms surface roughness is decreased, and contact angle value is increased with increasing DLC film thickness. In the electrical properties of DLC/plasma polymer, the value of the dielectric constant is increased, however the leakage current property of the DLC/plasma polymer is improved than that of plasma polymer film with increasing DLC film thickness.

• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.114-115
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• 2007

In this study, low temperature sintering property of the $0.6TiTe_3O_8-0.4MgTiO_3$ ceramics with sintering adds were investigated for LTCC application which enable to cofiring with Ag electrode. $TiTe_3O_8$ mixed with $MgTiO_3$ to improve the temperature property. In the X-ray diffraction patterns, the columbite structure of $TiTe_3O_3$ phase and ilmenite structure of $MgTiO_3$ phase were coexisted in all specimens. In the case of $H_3BO_3$ addition, the bulk density and dielectric constant were decreased but quality factor was increased with amount of $H_3BO_3$ additions. The TCRF of the $0.6TiTe_3O_8-0.4MgTiO_3+xwt%H_3BO_3$ ceramics were moved to positive direction. In another case, SnO addition, the bulk density and dielectric constant were increased but Quality factor was decreased with amount of SnO additions. The TCRF of the $0.6TiTe_3O_8-0.4MgTiO_3$+ywt%SnO ceramics were shifted to negative direction. The dielectric constant, quality factor and TCRF of the $0.6TiTe_3O_8-0.4MgTiO_3$ ceramics with $2wt%H_3BO_3$ and 2.5wt%SnO sintered at $830^{\circ}C$ for 1h, were 28.5, 39,570GHz, $+9.34ppm/^{\circ}C$ and 29.86, 35,80000z, $-0.58ppm/^{\circ}C$, respectively.

• The Journal of Engineering Geology
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• v.13 no.4
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• pp.405-418
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• 2003

Measurements of volumetric water content and saturation of porous media are very important factors in understanding the physical characteristics of soil, groundwater recharge by rainfall, pollutant movement, and slope failure. To measure such physical parameters, a permittivity method using electromagnetic wave is applied and use is made of the special permittivity response of understand to water and ethanol. In particular, the estimation is required because permittivity is influenced by the nature of the underground environment. In this study, we carried out experiments on the relative dependency of soil density, temperature and salinity of standard sand and granitic weathered soil using FDR-V system (Frequency domain reflectometry with vector network analyzer) within a frequency range of 1 - 18 GHz. The results of the study showed that the dielectric constants of standard sand and granitic weathered soil increased with increased volumetric water content of soil. However, the dependency of soil density was found to be a little low. Changes of dielectric constant with temperature appeared definitely in the real part of 1 GHz. That is, the dielectric constant of real part at 1 GHz of water and standard sand increased with the rise of temperature. However, ethanol showed decreased tendency. The study also showed that dielectric constant increased with increase in salinity at imaginary part of 1 GHz. It could be concluded from this study FDR-V system can adequately measure the physical properties of soil and the degree of salinity concentration of porous media within 1 GHz frequency range using dielectric constant.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.332-333
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• 2005

In this study, in order to develop low temperature sintering piezoelectric actuator, $Pb(Mg_{1/2}W_{1/2})_{0.03}(Ni_{1/3}Nb_{2/3})_x(Zr_{0.50},Ti_{0.50})_{1-x-0.03}$ (PMW-PNN-PZT) ceramic systems were fabricated using $CaCO_3-Li_2CO_3$ sintering aid and their dielectric and piezoelectric properties were investigated with the variation of PNN substitution. The piezoelectric actuator requires high piezoelectric constant $d_{33}$ and high electromechanical coupling factor kp. At the PMW-PNN-PZT ceramics with 9mol% PNN substitution sintered at $900^{\circ}C$, the density, electromechanical coupling factor kp, dielectric constant, piezoelectric constant $d_{33}$ and mechanical quality factor Qm showed the excellent values of 7.86 [$g/cm^3$], 0.584, 1881, 485 [pC/N] and 76, respectively for piezoelectric actuator application.

• Journal of Magnetics
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• v.11 no.4
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• pp.164-166
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• 2006

We have investigated the dielectric and magnetic properties of ferroelectric-antiferromagnetic $BaTiO_{3}-LaMnO_{3}$ composite with changing relative mole percents. Due to high sintering temperature, i.e. $1150^{\circ}C$, the Ba ion in $BaTiO_{3}$ seems to diffuse into $LaMnO_{3}$; resulting in $BaTiO_{3}-(La,Ba)MnO_{3}$ ferroelectric-ferromagnetic composite. At room temperature, $0.9BaTiO_{3}-0.1LaMnO_{3}$ composite exhibits considerable magnetization (${\sim}0.7\;emu/g\;at\;2000\;Oe$) and low coercive field (${\sim}5\;Oe$). Also it exhibits high dielectric constant (${\sim}560$) and low loss (${\sim}0.08$) at 10 kHz. This result may imply that $BaTiO_{3}-LaMnO_{3}$ could be suitable for a low leakage multiferroic composite.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1487-1489
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• 1994

$(Zr_{0.65}Sn_{0.35})Ti_{1.04}O_4$ system which has a dielectric constant, low dielectric loss and temperature coefficient was investigated. Temperature coefficient varied from positive to negative with increasing of NiO. For the NiO content 1.0wt%. i.e $(Zr_{0.65}Sn_{0.35})Ti_{1.04}O_4$, the ceramic showed very good dielectric properties such as ${\epsilon}$=37.8, $Q{\times}f_o=49.000$ and ${\tau}_r= 4{\pm}1ppm/^{\circ}C$.