• Journal of the Korean Ceramic Society
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• v.41 no.12 s.271
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• pp.884-888
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• 2004

Effects of NiO were studied in aspects of dielectric properties and microstructure of $0.96(0.91Pb(Mg_{1/3}Nb_{2/3})O_3-0.09PbTiO_3)­0.04BaTiO_3$ (PMN-PT-BT, PBT). The PBT was prepared by a conventional mixed oxide method using $(MgCO_3)_4{\cdot}Mg(OH)_2$ instead of MgO through Lewis acid-base interaction. NiO was added in the range of 0.5 to $3.0\;wt\%$ as thermally decomposable $2NiCO_3{\cdot}3Ni(OH)_2$ and it seemed to enhance densification to a large extent below $1000^{\circ}C$. But all the systems gave rise to ceramics with almost same relative sintered density of 96% by sintering at $1000^{\circ}C$ for 2 h. But it turned out that the addition of NiO was detrimental to dielectric constant but beneficial to the loss of dielectric constant.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.3
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• pp.13-17
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• 2000

The electrical properties of polyimide for interlayer dielectric applications are investigated with ECR (Electron Cyclotron Resonance) etching process. ECR etching with $Cl_2$-based plasma, generally used for aluminum etching, results in an increase in the dielectric constant of polyimide, while $SF_{6}$ plasma exhibits a high polyimide etch rate and a reducing effect of the dielectric constant. The leakage current of the polyimide is significantly suppressed after plasma exposure. Combination of Al etching with $Cl_2$plasma and polyimide etching with $SF_{6}$ plasma is expected as a good tool for realizing the multilevel metallization structures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.528-528
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• 2007

Cu CMP widely has been using for the formation of multilevel metal interconnects by the Cu damascene process. And lower dielectric constant materials are required for the below 45nm technology node. As the dielectric constant of dielectric materials are smaller, the strength of dielectric materials become weaker. Therefore these materials are easily damaged by high down pressure during conventional CMP. Also, technical problems such as surface scratches, delamination, dishing and erosion are also occurred. In order to overcome these problems in CMP, the ECMP (electro-chemical mechanical planarization) has been introduced. In this process, abrasive free electrolyte, soft pad and low down force were used. The electrolyte is one of important factor to solve these problems. Also, additives are required to improve the removal rate, uniformity, surface roughness, defects, and so on. In this study, KOH and $NaNO_3$ based electrolytes were used for Cu ECMP and the electrochemical behavior was evaluated by the potentiostat. Also, the Cu surface was observed by SEM as a function of applied voltage and chemical concentration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.313-314
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• 2006

$BiNbO_4$ ceramics were sintered under the presence of zinc-borosilicate(ZBS) glass and resultant microwave dielectric properties were investigated with a view to applying the composition to LTCC technology. The addition of 5~20 wt% ZBS glass ensured successful sintering below $900^{\circ}C$. In general, increased addition of ZBS glass increased sinterability and temperature coefficient of resonant frequency(${\tau}_f$), but it decreased the dielectric constant(${\varepsilon}_r$) and quality factor($Q{\times}f_0$) significantly due to the formation of an excessive liquid. The sintered $BiNbO_4$ ceramics at $900^{\circ}C$ with 15 wt% ZBS glass demonstrated 25 in dielectric constant(${\varepsilon}_r$), 3,700 in quality factor($Q{\times}f_0$), and -32 $ppm/{\circ}C$ in temperature coefficient of resonant frequency(${\tau}_f$).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.126-130
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• 2008

In this study, in order to develop low loss multilayer piezoelectric actuator, PZN-PZT ceramics were fabricated using $Li_2CO_3,\;Bi_2O_3$, CuO and ZnO as sintering aids, their structural, piezoelectric and dielectric characteristics were investigated according to the amount of ZnO addition, At the sintering temperature of $870^{\circ}C$, the density, electromechanical coupling factor(kp), mechanical quality factor(Qm), dielectric constant(${\epsilon}_r$) and piezoelectric constant($d_{33}$) of 0.4 wt% ZnO added specimen (sintered at $870^{\circ}C$) showed the optimum value of $7.812g/cm^3$, 0.535, 916, 1399, 335 pC/N respectively. Taking into consideration above piezoelectric properties of the specimen sintered at low temperature, it was concluded that PZN-PZT ceramics using 0.4 wt% ZnO as additive showed the optimum characteristics as the composition ceramics for low loss multilayer piezoelectric actuator application.

• Journal of the Semiconductor & Display Technology
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• v.7 no.1
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• pp.41-45
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• 2008

We studied the electrical characteristics of low-k SiOCR interlayer dielectric(ILD) films fabricated by plasma enhanced chemical vapor deposition (PECVD). The precursor bis-trimethylsilylmethane (BTMSM) was introduced into the reaction chamber with the various flow rates. The absorption intensities of Si-O-$CH_x$, bonding group and Si-$CH_x$, bonding group changed synchronously for the variation of precursor flow rate, but the intensity of Si-O-Si(C) responded asynchronously with the $CH_x$, combined bonds. The SiOCH films revealed ultra low dielectric constant around 2.1(1) and reduced further below 2.0 by heat treatments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.821-825
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• 2004

In this paper, in order to develop the low temperature sintering ceramics for multilayer piezoelectric transformer, PMN-PZT ceramcis using $Li_2CO_3$ and $Bi_2O_3$ as sintering aids were manufactured, and their microstructural, dielectric and piezoelectric properties were investigated. The sintering aids were proved to lower the sintering temperature of piezoelectric ceramics due to the effect of $LiBiO_2$ liquid phase. At 0.1wt% $Li_2CO_3$ added specimen sintered at $970[^{\circ}C]$, electromechanical coupling factor(Kp), mechanical quality factor(Qm) and dielectric constant showed the optimum values of 0.50, 2,413 and 1,245, respectively, for multilayer piezoelectric transformer application.

• Journal of the Korean Ceramic Society
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• v.30 no.10
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• pp.845-851
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• 1993

Low firing temperature substrate were synthesized through tape casting and sintering of glass with cordierite composition and then their properties were investigated. Even though the dielectric properties and XRD patterns of substrates, obtained by tape casting and sintering at 900~100$0^{\circ}C$ for various periods, were similar to those of substrates obtained by dry pressing, the sinterability was enhanced. The substrates were thin and the size was 0.6$\times$50$\times$50mm. From the results of dielectric properties, the sinterability and X-ray diffraction pattern, the proper condition for cofiring process with conductor, Cu, was 90$0^{\circ}C$ for 1h. The properties of the substrate are as follows; the dielectric constant was 5.31(at 1MHz), the dissipation factor was 0.0028, the apparent porosity was 0.28% and the main crystalline phase was $\alpha$-cordierite.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.61-62
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• 2006

In this study, in order to develop the low temperature sintering ceramics for multilayer piezoelectric actuator, PMN-PNN-PZT ceramics using ${Fe_2}{O_3}$ and $WO_3$ as sintering aids were manufactured with the amount of $WO_3$ addition, and the specimens were sintered at 900, 930, $960^{\circ}C$, respectively. Thereafter, their dielectric and piezoelectric properties were investigated. The sintering aids were proved to lower the sintering temperature of piezoelectric ceramics due to the effects of ${Fe_2}{O_3}$ and $WO_3$ liquid phase. At 0.3wt% $WO_3$ added specimen sintered at $930^{\circ}C$, kp, Qm, dielectric constant and $d_{33}$ showed the optimum values of 0.60, 1402, 1440 and 360[pC/N], respectively, for multilayer piezoelectric actuator application.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1400-1401
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• 2006

In this study, in order to develop low temperature sintering piezoelectric ceramics for multilayer piezoelectric actuator, $PbSr(Mn_{1/3}Nb_{2/3})O_3-(Mg_{1/3}Nb_{2/3})O_3-(ZrTi)O_3$ ceramics were fabricated using $Na_{2}CO_{3}-Li_{2}CO_{3}$ as sintering aids and their piezoelectric and dielectric characteristics were investigated according to the sintering tempo rature. At the sintering temperature of $900^{\circ}C$, the density, electrom echanical coupling factor(kp), mechanical quality factor(Qm) and dielectric constant(${\varepsilon}r$) of specimen showed the optimum value of $7.730[g/cm^2]$, 0.552, 1134, 1492 and 330[pC/N], respectively.