• 제목/요약/키워드: Low conducting state

검색결과 57건 처리시간 0.033초

Electrical Switching Characteristics of Ge-Se Thin Films for ReRAM Cell Applications

  • Kim, Jang-Han;Nam, Ki-Hyun;Chung, Hong-Bay
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.343-344
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    • 2012
  • It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

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수소-알코올연료전지를 위한 금속-산화물 나노구조제어 (Control of Metal-Oxide Nanostructures for $H_{2}-Alcohol$ Fuel Cells)

  • 박경원;송유정;한상범;이종민
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2007년도 춘계학술대회
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    • pp.141-145
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    • 2007
  • Due to their excellent catalytic activity with respect to methanol oxidation on platinum at low temperature, platinum nanosized catalysts have been a topic of great interest for use in direct methanol fuel cells (DMFCs). Since pure platinum is readily poisoned by CO, a by-product of methanol electrooxidation, and is extremely expensive, a number of efforts to design and characterize Pt-based alloy nanosized catalysts or Pt nanophase-support composites have been attempted in order to reduce or relieve the CO poisoning effect. In this review paper, we summarize these efforts based upon our recent research results. The Pt-based nanocatalysts were designed by chemical synthesis and thin-film technology, and were characterized by a variety of analyses. According to bifunctional mechanism, it was concluded that good alloy formation with $2^{nd}$ metal (e.g., Ru) as well as the metallic state and optimum portion of Ru element in the anode catalyst contribute to an enhanced catalytic activity for methanol electrooxidation. In addition, we found that the modified electronic properties of platinum in Pt alloy electrodes as well as the surface and bulk structure of Pt alloys with a proper composition could be attributed to a higher catalytic activity for methanol electooxdation. Proton conducting contribution of nanosized electrocatalysts should also be considered to be excellent in methanol electrooxidation (Spillover effect). Finally, we confirmed the ensemble effect, which combined all above effects, in Pt-based nanocatalsyts especially, such as PtRuRhNi and $PtRuWO_{3}$, contribute to an enhanced catalytic activity.

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용융 금속의 고화층 증가가 자연대류 열전달에 미치는 영향 (Effect of Crust Increase on Natural Convection Heat Transfer in the Molten Metal Pool)

  • 박래준;최상민;김상백;김희동
    • 대한기계학회논문집B
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    • 제23권2호
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    • pp.226-233
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    • 1999
  • An experimental study has been performed on natural convection heat transfer with a rapid crust formation in the molten metal pool of a low Prandtl number fluid. Two types of steady state tests, a low and high geometric aspect ratio cases in the molten metal pool, were performed. The crust thickness by solidification was measured 88 a function of boundary surface temperatures. The experimental results on the relationship between the Nusselt number and Rayleigh number In the molten metal pool with a crust formation were compared with existing correlations. The experimental study has shown that the bottom surface temperature of the molten metal layer, in all experiments. is the major influential parameter in the crust formation, duo to the natural convection flow. The Nusselt number of the case without a crust formation in the molten metal pool is greater than that of the case with the crust formation at the same Rayleigh number. The present experimental results on the relationship between the Nusselt number and Rayleigh number In the molten metal pool match well with Globe and Dropkin's correlation. From the experimental results, a now correlation between the Nusslet number and Rayleigh number in the molten metal pool with the crust formation was developed as $Nu=0.0923(Ra)^{0.302}$ ($2{\times}10^4< Ra<2{\times}10^7$).

Fabrication of IGZO-based Oxide TFTs by Electron-assisted Sputtering Process

  • 윤영준;조성환;김창열;남상훈;이학민;오종석;김용환
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.273.2-273.2
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    • 2014
  • Sputtering process has been widely used in Si-based semiconductor industry and it is also an ideal method to deposit transparent oxide materials for thin-film transistors (TFTs). The oxide films grown at low temperature by conventional RF sputtering process are typically amorphous state with low density including a large number of defects such as dangling bonds and oxygen vacancies. Those play a crucial role in the electron conduction in transparent electrode, while those are the origin of instability of semiconducting channel in oxide TFTs due to electron trapping. Therefore, post treatments such as high temperature annealing process have been commonly progressed to obtain high reliability and good stability. In this work, the scheme of electron-assisted RF sputtering process for high quality transparent oxide films was suggested. Through the additional electron supply into the plasma during sputtering process, the working pressure could be kept below $5{\times}10-4Torr$. Therefore, both the mean free path and the mobility of sputtered atoms were increased and the well ordered and the highly dense microstructure could be obtained compared to those of conventional sputtering condition. In this work, the physical properties of transparent oxide films such as conducting indium tin oxide and semiconducting indium gallium zinc oxide films grown by electron-assisted sputtering process will be discussed in detail. Those films showed the high conductivity and the high mobility without additional post annealing process. In addition, oxide TFT characteristics based on IGZO channel and ITO electrode will be shown.

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Resistive Memory Switching in Ge5Se5 Thin Films

  • Kim, Jang-Han;Hwang, Yeong-Hyeon;Chung, Hong-Bay
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.326-326
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    • 2014
  • It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

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Li2O Co-Sputtering을 통한 비정질 LLZO 고체전해질의 전기화학 특성 평가 (Evaluation of Electrochemical Properties of Amorphous LLZO Solid Electrolyte Through Li2O Co-Sputtering)

  • 박준섭;김종헌;김현석
    • 한국재료학회지
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    • 제31권11호
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    • pp.614-618
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    • 2021
  • As the size of market for electric vehicles and energy storage systems grows, the demand for lithium-ion batteries (LIBs) is increasing. Currently, commercial LIBs are fabricated with liquid electrolytes, which have some safety issues such as low chemical stability, which can cause ignition of fire. As a substitute for liquid electrolytes, solid electrolytes are now being extensively studied. However, solid electrolytes have disadvantages of low ionic conductivity and high resistance at interface between electrode and electrolyte. In this study, Li7La3Zr2O12 (LLZO), one of the best ion conducting materials among oxide based solid electrolytes, is fabricated through RF-sputtering and various electrochemical properties are analyzed. Moreover, the electrochemical properties of LLZO are found to significantly improve with co-sputtered Li2O. An all-solid thin film battery is fabricated by introducing a thin film solid electrolyte and an Li4Ti5O12 (LTO) cathode; resulting electrochemical properties are also analyzed. The LLZO/Li2O (60W) sample shows a very good performance in ionic conductivity of 7.3×10-8 S/cm, with improvement in c-rate and stable cycle performance.

저발열량 천연가스가 엔진 성능 및 배기특성에 미치는 영향 (Effect of Low Calorific Natural Gas on Performance and Emission Characteristics of Engine)

  • 이성원;임기훈;박철웅;최영;김창기
    • 대한기계학회논문집B
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    • 제37권12호
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    • pp.1129-1135
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    • 2013
  • 본 연구에서는 저발열량 천연가스가 현재 상용되고 있는 대형 천연가스 엔진에 미치는 영향을 살펴보기 위하여 3종류의 연료를 적용하였다. 전부하 운전조건과 WHSC 및 WHTC 모드 테스트를 수행하여 엔진성능 및 배기특성을 분석하였다. 실험결과 전부하 실험에서 토크성능이 $9,800kcal/Nm^3$의 발열량을 갖는 저발열량 가스의 경우 현행 천연가스($10,400kcal/Nm^3$)를 사용한 결과에 비해 4.4% 감소하였다. 저발열량 연료를 사용하였을 때 일산화탄소, 이산화탄소 및 질소산화물의 배출량은 감소하였지만, 탄화수소의 배출량은 증가하였다. WHSC 및 WHTC 실험결과 저발열량 연료에서 열효율이 증가하였으며 배기특성은 전부하 실험결과와 유사한 경향을 보였다. 저발열량 천연가스를 사용할 경우 제원상의 출력을 만족하기 어렵고, 탄화수소의 배출이 증가하는 문제점을 확인하였다.

산학일체형 도제학교의 도제 교육과정 편성 현황 분석 연구 (A Study of Analysis Current state of the Apprenticeship Curriculum in Vocational Education and Training High Schools Participating in the Apprenticeship System)

  • 안재영
    • 직업교육연구
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    • 제36권4호
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    • pp.57-78
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    • 2017
  • 본 연구는 산학일체형 도제학교의 도제 프로그램이 학교 교육과정에 어떻게 편성되었는지를 종합적으로 분석하여 도제 프로그램 개발과 도제 교육과정 편성을 위한 제언을 제시하고자 한다. 이러한 연구의 목적을 달성하기 위하여 1~2차 33개 도제학교의 도제 교육과정 현황 자료를 분석하였으며 그 결과는 다음과 같다. 첫째, '학과'와 '인력 양성 분야 및 목표', '학과'와 '자격' 간의 적절성(연관성)은 도제반과 일반반이 비슷하였으나 '인력 양성 분야 및 목표'와 '자격' 간의 적절성(연관성)은 도제반이 일반반보다 높은 편이다. 둘째, 도제 프로그램의 필수 능력단위와 선택 능력단위는 Off-JT와 OJT에 비교적 균등하게 편성되어 있다. 셋째, 도제 프로그램의 능력단위는 2015 개정 교육과정의 NCS 실무과목뿐만 아니라 2009 개정 교육과정의 전문교과 교과목에도 편성되어 있다. 넷째, 도제 프로그램의 능력단위와 학교 교육과정 전문교과 과목 간의 연관성은 대체로 높으나 연관성이 낮은 학교도 상당 수 있다. 다섯째, 도제 프로그램 능력단위의 학기별 편성 위계성은 대체로 높으나 위계성이 낮은 학교도 상당수 있다. 이상의 결과에 따라 도제학교의 교육과정 변경 승인 기간 유예 적용, NCS 능력단위 수정 보완 전후 매칭표 보급, 고시외 실무과목의 편성, 기업특화과목의 신설, 도제학교 교육과정에 대한 모니터링과 컨설팅을 정책적 제언으로 제시한다.

TEMPOL 첨가제 적용에 의한 광감응형 전기변색 소자 탈색성능 향상 (Improvement of Bleaching Performance of Photosensitive Electrochromic Device by the Additive of TEMPOL)

  • 송승한;박희성;조철희;홍성준;한치환
    • 대한화학회지
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    • 제66권3호
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    • pp.209-217
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    • 2022
  • 본 연구그룹에서는 투명 전도성 기판이 필요 없는 광감응형 전기변색 소자를 개발하였다. 이전의 연구에서 백금 촉매 적용에 의한 빠른 착색 및 탈색을 확인하였고, 저온소성형 WO3졸과 TiO2 졸을 적용하여 플렉시블 필름형 소자를 구현하였으나, 이러한 소자가 4~5 시간 동안 태양광에 노출될 경우 과착색 되어 암막상태에서도 탈색이 되지 않는 현상을 확인하였다. 본 연구에서는 이러한 과착색 현상을 해결하기 위하여 광감응형 전기변색 소자의 전해질에(4-Hydroxy-2,2,6,6-tetramethylpiperidin-1-yl)oxyl (TEMPOL)을 첨가하였다. TEMPOL을 첨가제로 사용한 광감응형 전기변색 소자의 경우 4시간 이상 햇빛에 노출되어도 과착색이 되지 않고, 가역성이 크게 향상되는 것을 확인하였다. 다양한 농도의 TEMPOL을 적용하여 가시광 투과율 변화 및 착/탈색 속도를 비교하였고, 에너지 레벨 관점에서 가능한 TEMPOL의 과착색 방지 메커니즘을 제시하였다.

국내 기항 외국적 외항선 항만국통제 현황 및 개선방안 (Current Status and Improvement Measures for the Port State Control of Foreign Vessels in Domestic Port Calls)

  • 정규민;황제호;김시현
    • 한국항해항만학회지
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    • 제46권4호
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    • pp.338-343
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    • 2022
  • 글로벌 해운산업이 활성화됨에 따라 특정 국가들의 해양 영도를 경유하는 외국적 외항선의 규모가 급격하게 증가하였다. 하지만 선박의 컨디션 관리, 안전 운항을 위한 체계 수립이 미흡으로 선박 운항에 기인한 대형 해양사고가 발생하여 인명 피해와 심각한 해양환경오염을 유발하고 있다. 따라서 IMO는 해양 영토의 관할권을 갖는 국가들에게 항만국통제를 수행할 수 있는 권한을 부여하고 특히 외국적 선박에 대한 규정과 지침을 강화하였다. 특히 우리나라는 TOKYO MOU 회원국으로 항만국통제를 수행하고 있지만 2020년을 기준으로 국내를 기항한 국적선 대비 외국적선의 비중이 3배 높음에도 불구하고 9% 수준의 저조한 점검률로 TOKYO MOU에서 권고하고 있는 점검률 수준을 하회하고 있는 실정이다. 따라서 본 연구는 국내 항만국통제에 대한 효율성과 효과성을 개선하기 위한 목적으로 객관형 설문문항과 서면 전문가 인터뷰를 통해 항만국통제관들의 실무적 의견을 수렴하여 IPA분석과 컨텐츠분석을 수행하였다. 결과적으로 PSC점검의 질적 향상을 위해 수행 시 인적 요소와 관련된 선내 생활, 근무 환경, 안전사고 대응에 대한 중요성과 성과가 개선되어야 함이 도출되었다. 또한 PSC 점검성과 개선을 위해 유관 업무의 행정 일원화, 항만국통제관 인력 충원, 선박결함 신고제도 활성화, PSC 수행 그룹 재편성 등을 위한 다방면적 지원 기반이 마련된다면 우리나라 항만국통제에 대한 업무 환경과 성과가 개선될 것으로 판단된다.