• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.272-272
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• 2009

Screen-printing metal contact is typically applied to the solar cells for mass production. And metal paste is used widely for rear contact formation of silicon solar cells. However, Screen-printing solar cell metal paste contact has low aspect ratio, low accuracy, high resistivity, hard control of unclean process. In this paper is to develop resistivity of rear contact for silicon solar cells applications. 4-point prove result, This resistivity of rear contact by Al evaporation was measured about $3.56{\times}10^6{\Omega}{\cdot}cm$ less than screen printed solar cell about $52.6{\times}10^6{\Omega}{\cdot}cm$.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2003년도 ICCAS
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• pp.134-137
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• 2003

Newton-Raphson is most used algorithm in EIT(electrical impedance tomography), cross-sectional distribution of resistivity is reconstructed by mean of both generating and sensing electrodes attached onto the surface of the object. EIT has been suffered from the severe ill-posedness which is caused by the inherent low sensitivity of boundary measurements to any changes of internal resistivity values. In this paper, we propose modified cost function and weighting factor that compensate for low sensitivity between boundary measurements and internal resistivity and improve performance of Newton-Raphson for EIT in region of interest.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1648-1650
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• 1996

In present paper, Cu films $4{\mu}m$, thick were fabricated by dual deposition methods using RF magnetron sputtering on Si wafer. The dependence of the electrical resistivity, adherence, and reflection in Cu films [$Cu_{4-x}$(low resistivity) / $Cu_x$(high adherence) / Si- wafer] on the x thickness have been investigated. Cu films of $4{\mu}m$ thickness formed with dual deposition methods had the low electrical resistivity of about $2.6{\mu}{\Omega}{\cdot}cm$ and high adherence of about 700g/cm. In conclusion, it is possible for these films to be used for micro-devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.109-110
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• 2005

We have suggested sputtered W-C-N thin film for preventing thermal budget between semiconductor and metal. These results show that the W-C-N thin film has good thermal stability and low resistivity. In this study we newly suggested sputtered W-B-C-N thin diffusion barrier. In order to improve the characteristics, we examined the impurity behaviors as a function of nitrogen gas flow ratio. This thin film is able to prevent the interdiffusion during high temperature (700 to $1000^{\circ}C$) annealing process and has low resistivity ($\sim$200$\mu{\Omega}-cm$). Through the analysis of X-Ray diffraction, resistivity and XPS, we studied structure behavior of W-B-C-N diffusion barrier.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.552-555
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• 1999

In this paper, the volume resistivity properties due to mixture ration of linear low density polyethylene(LLDPE) and ethylene vinyl acetate(EVA) are studied. Electrodes is composed of upper electrode 37(mm $\Phi$), guardring electrode(inner 55(mm $\Phi$ ), and lower electrode 87(mm $\Phi$ In order to measure the leakage current, We used electrometer and stable oven with temperature controller. Measurement method is to measure the leakage current of next specimen after applying the voltage according to 'Step Apply Methods' for ten minutes. In order to measure the volume resistivity properties, the micro electrometer is used, the range of temperature and applying voltage are 25 to 100[$^{\circ}C$] to 100[V] respectively.

• 산업기술연구
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• 제27권B호
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• pp.115-119
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• 2007

Currently, geophysical method is applied for understanding the subsurface geologic structure economically and systematically, but there exists some limitations on recognizing complex subsurface structures precisely by a single geophysical method. In order to understand the complex subsurface structures, we applied various geophysical methods including seismic refraction survey, two-dimensional resistivity survey, seismic tomography survey, suspension-ps log, and understood distribution of low velocity, low resistivity range of resistivity survey and correlation of an intersecting point, velocity distribution of seismic tomography survey.

• 한국군사과학기술학회지
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• 제22권1호
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• pp.20-26
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• 2019

In this paper, we propose measurement based numerical resistivity model for low energy exploding foil initiator (LEEFI) of electronic safety and arming device(ESAD). A resistivity model describes a behavior of variable resistance in LEEFI by firing current. The previous resistivity model was based on high energy detonator applications as explosive bridge wire and exploding foil initiator. Therefore, to estimate the voltage, current, and burst time of LEEFI, a resistivity model suitable for LEEFI is needed. For the modeling of resistivity of LEEFI, we propose a specific action based equation which represents a behavior of LEEFI when firing current is applied. To verify the proposed model, we analyze a firing current transmission path to obtain parasitic impedance. We experimentally verify that the proposed resistivity model offers precise estimation for the behavior of variable resistance in LEEFI.

• 센서학회지
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• 제24권4호
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• pp.224-227
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• 2015

In this study, 2 wt% Cr-doped Ni thin films were deposited using DC sputtering on a bare Si substrate using a 4 inch target at room temperature. In order to obtain ultrathin films from Cr-doped Ni thin films with high electrical properties and uniform surface, the micro-structure and electrical properties were investigated as a function of deposition time. For all deposition times, the Cr-doped Ni thin films had low average resistivity and small surface roughness. However, the resistivity of the Cr-doped Ni thin films at various ranges showed large differences for deposition times below 90 s. From the results, 120 s is considered as the appropriate deposition time for Cr-doped Ni thin films to obtain the lowest resistivity, a low surface roughness, and a small difference of resistivity. The Cr-doped Ni thin films are prospective materials for microdevices as ultrathin film electrodes.

• 한국표면공학회지
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• 제51권3호
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• pp.185-190
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• 2018

Dopant-free silicon heterojunction solar cells using Transition Metal Oxide(TMO) such as Molybdenum Oxide($MoO_X$) and Vanadium Oxide($V_2O_X$) have been focused on to increase the work function of TMO in order to maximize the work function difference between TMO and n-Si for a high-efficiency solar cell. One another way to increase the work function difference is to control the silicon wafer resistivity. In this paper, dopant-free silicon heterojunction solar cells were fabricated using the wafer with the various resistivity and analyzed to understand the effect of n-Si work function. As a result, it is shown that the high passivation and junction quality when $V_2O_X$ deposited on the wafer with low work function compared to the high work function wafer, inducing the increase of higher collection probability, especially at long wavelength region. the solar cell efficiency of 15.28% was measured in low work function wafer, which is 34% higher value than the high work function solar cells.

• 한국전기전자재료학회논문지
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• 제17권7호
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• pp.738-746
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• 2004

Recently zinc oxide(ZnO) has emerged as one of the most promising transparent conducting films with a strong demand of low cost and high performance optoelectronic devices, ZnO film has many advantages such as high chemical and mechanical stabilities, and abundance in nature. In this paper, in order to obtain the excellent transparent conducting film with low resistivity and high optical transmittance for Plasma Display Pannel(PDP), aluminium doped zinc oxide films were deposited on Corning glass substrate by dc magnetron sputtering method. The effects of the discharge power and doping amounts of $Al_2$$O_3$ on the electrical and optical properties were investigated experimentally. Particularly in order to lower the electrical resistivity, positive and negative bias voltages were applied on the substrate, and the effect of bias voltage on the electrical properties of ZnO:Al thin film were also studied and discussed. Films with lowest resistivity of $4.3 \times 10 ^{-4} \Omega-cm$ and good transmittance of 91.46 % have been achieved for the films deposited at 1 mtorr, $400^{\circ}C$, 40 W, Al content of 2 wt% with a substrate bias of +30 V for about 800 nm in film thickness.