• Journal of IKEEE
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• v.21 no.1
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• pp.73-76
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• 2017

SiC devices have drawn much attentions for its wide band gap material properties. Especially 4H-SiC Schottky barrier diode is widely used for its rapid switching speed and low forward voltage drop. However, the low reliability of Schottky barrier diode has many problems that Super Barrier Rectifier(SBR) was researched for alternative. makes 4H-SiC trench-type accumulation super barrier rectifier(TASBR) is analyzed and proposed in this paper. We could verified that forward voltage drop was improved 21.06% without severe degradation of reverse breakdown voltage and leakage current based on the results from 2-D numerical simulations. With this novel rectifier structure, we can expect application with less power loss.

• Proceedings of the KIPE Conference
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• 2009.11a
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• pp.231-233
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• 2009

The plating equipment, water treatment system, electrolysis facility, etc need the high current and high power rectifier for their original purposes. So the paper investigates the applicable types of rectifiers and carries out their comparisons, and also suggest the practical design guidelines for a suitable candidate rectifier for low voltage high current high power applications.

• Proceedings of the KIPE Conference
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• 2001.07a
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• pp.681-684
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• 2001

This paper proposes a new induction heating system composed of a thyristor PWM rectifier with a resonant commutation circuit. The operation of proposed system as first analyzed by a theoretical approach with equivalent circuits. And its verification was performed by computer simulations with EMTP. The proposed system can provide a solution for the power factor problem of the existing high-power induction heating system, which uses the line-commutated thyristor bridge in rectifier side.

• Proceedings of the KIPE Conference
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• 2003.07a
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• pp.85-88
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• 2003

In this Paper, we report the experimental results of the Forward-flyback U-U converter with current doubler and synchronous rectifier. The experimental converter, that has a output voltage 3.3V, output current 20A, maximum power of 66W, switching frequency of 290kHz and input voltage range of 36-75V, has been successfully implemented. As a result, in the entire voltage range the measured full load efficiency was above 85$\%$, and the output voltage was regulated at 3.3V within $\pm3{\%}$ tolerance.

• Transactions on Electrical and Electronic Materials
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• v.5 no.6
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• pp.237-240
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• 2004

In this paper, a CMOS bridge rectifier for HF and microwave RFID systems is presented. The proposed RFID CMOS bridge rectifier is designed with two NMOSs and two PMOSs whose gates are connected to the antenna, and it is operated as a full wave bridge rectifier. The simulation results obtained with SPICE show the well rectified and high enough DC output voltages for the operating frequencies of 13.56 MHz, 915 MHz, and 2.45 GHz which are used in various RFID systems. The obtained DC output voltages are sufficiently high for driving the low power microchip in RFID transponder for the frequency range of HF and microwave.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.48 no.11
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• pp.640-645
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• 1999

This paper proposes a new series-connected diode rectifier which draws sinusoidal input currents. The proposed rectifier system is configured by adding an auxiliary circuit to the conventional 12-pulse series-connected diode rectifier and employing a current injection technique. A low kVA($0.02P_{\circ}$(PU) ) active current source injects a triangular current into the interphase reactor of the diode rectifier. The current injection results in near sinusoidal input current from the utility with less than 1% THD. The resulting system is suitable for high voltage and high power applications. Experimental and simulation results are provided from a 220V, 3kVA prototype rectifier system.

• Transactions on Electrical and Electronic Materials
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• v.7 no.3
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• pp.103-107
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• 2006

In this paper, a CMOS complementary bridge rectifier for driving RFID transponder chips is presented. The proposed RFID CMOS complementary bridge rectifier is designed with two NMOSs at the input, which are configured by cross-connected gate structures, and two PMOSs and two NMOSs at the output, which are configured by diode-connected MOS structures. Output characteristics of the proposed rectifier are analyzed with the high frequency small-signal equivalent circuit and verified with SPICE for RFID operating frequencies of 13.56 MHz HF for ISO 18000-3, 915MHz UHF for ISO 18000-6, and 2.45 GHz microwave for ISO 18000-4. Simulation results show well-rectified and high enough DC output voltages for driving the low power microchip in the RFID transponder for the frequency range from HF to microwave. DC output voltages are dropped by only around 0.7 V from the input peak-to-peak voltages.

• Proceedings of the KIPE Conference
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• 1998.07a
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• pp.291-294
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• 1998

This paper presents a new active power filter with low DC voltage for compensating reactive power and harmonics of three-phase high power/voltage harmonic producing load. It has a structure of converter connected in series with power factor correction capacitor. Appropriate size and number of filter capacitor are determined by an equation and applied to simulation of 10kvar 6-pulse SCR rectifier.

• The Transactions of the Korean Institute of Power Electronics
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• v.22 no.4
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• pp.297-304
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• 2017

The purpose of this paper is to analyze losses because of switching devices and the secondary side circuit diodes of 500 W full bridge dc-dc converter by applying gallium nitride (GaN) field-effect transistor (FET), which is one of the wide band gap devices. For the detailed device analysis, we translate the specific resistance relation caused by the GaN FET material property into algebraic expression, and investigate the influence of the GaN FET structure and characteristic on efficiency and system specifications. In addition, we mathematically compare the diode rectifier circuit loss, which is a full bridge dc-dc converter secondary side circuit, with the synchronous rectifier circuit loss using silicon metal-oxide semiconductor (Si MOSFET) or GaN FET, which produce the full bridge dc-dc converter analytical value validity to derive the final efficiency and loss. We also design the heat sink based on the mathematically derived loss value, and suggest the heat sink size by purpose and the heat divergence degree through simulation.

• The Transactions of the Korean Institute of Power Electronics
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• v.4 no.3
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• pp.304-309
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• 1999

In this paper, a new 24longleftarrowpulse diode rectifier system based upon the conventional series-connected 12-pulse rectifier is p proposed with the least number of switching devices and low VA rating of the additional passive components. The p proposed approach does not employ any active switching devices. Therefore, the system is rugged and simple to i implement. Detailed analysis with VA rating calculation of the components is presented and experimental results from a a 220V, 3kV A rectifier system verify the proposed concept.