• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.82-85
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• 2000

We introduce pulsed $CO_2$ laser power supply excited by half-wave rectified 60Hz AC discharge some advantage of cost and size compared to a typical pulsed power supply. AC frequency is adjusted from 10Hz to 60Hz to control laser output. In this laser, a low voltage open loop control for high voltage AC discharge circuits is employed to avoid the HV sampling or switching. The control is achieved by using a ZCS circuit and a PIC one-chip microprocessor that control the gate signal of SCR precisely. The pulse repetition rate is limited by 60Hz due to a high leakage inductance. The maximum laser output was obtained about 20W at the condition of total pressure, 18Torr and pulse repetition rate,60Hz.

• Korean Journal of Optics and Photonics
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• v.4 no.2
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• pp.206-211
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• 1993

We carried out the second harmonic generation of low power CW laser diode with maximum power of 30 mW in $LilO_3$ crystals. We used a ring enhancement cavity to increase the second harmonic conversion efficiency. The ring enhancement cavity was Composed of two flat mirrors and two concave mirrors. The focal length of concave mirrors was 25 mm, and 5 mm long and 10 mm long $LilO_3$ crystals were used. We measured the second harmonic power according to the pumping power and compared with theoretical value. We obtained 397 nm second harmonic power of about $6.6{\mu}W$ in 10 mm long $LilO_3$ crystal with the fundumental 794 nm pumping power of 28 mW.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.7
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• pp.1393-1397
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• 2009

A high-speed wavelength swept laser, which is based on oscillation characteristics of a fiber Fabry-Perot tunable filter, is described. The laser is constructed by using a semiconductor optical amplifier, a fiber Fabry-Perot tunable filter, and 3.348 km fiber ring cavity. The wavelength sweeps are repeatatively generated with the repetition period of 61 kHz which is the first parallel oscillation frequency of the Fabry-Perot tunable filter for the low power consumption. Mode-locking is implemented by 3.348 km fiber ring cavity for matching the fundamental of cavity roundtrip time to the sweep period. The wavelength tuning range of the laser is 87 nm(FWHM) and the average output power is 1.284 mW.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1995.10a
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• pp.204-209
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• 1995

The implementation of rapid prototyping technologies has been developed for automotive engineering by utilizing concurrent engineering principes integrated with slective laser sintering. The Selective Laser Sintering, in which a part is generated in layers form powder using a computer-controlled laser scanning apparatus and power feed system. An over view of the basic principles of SLS Machine operation is given. Binding mechanisms are described for power which becomes thermally activated bye the scanning laser beam; viscous flow and melting of a low-melting-point phase in powder. The production of parts from metal is described, including post processing to improve structural integrity and induce a transformation.

• Journal of the Optical Society of Korea
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• v.15 no.2
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• pp.124-127
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• 2011

Quantum dots were designed within a GRIN-SCH(Graded index - Separate confinement Heterostructure) heterostructure to create a high power InAlAs/AlGaAs laser diode. 808 nm light emission was with a quantum dot composition of In0.665Al0.335As and wetting layer composition of Al0.2Ga0.8As by LASTIP simulation software. Typical characteristics of GRIN structures such as high confinement ratios and Gaussian beam profiles were shown to still apply when quantum dots are used as the active media. With a dot density of 1.0x1011 dots/cm2, two quantum dot layers were found to be good enough for low threshold, high-power laser applications.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.709-713
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• 2004

Characteristics of laser-assisted wet etching of titanium in phosphoric acid were investigated to examine the feasibility of this method for fabrication of high aspect ratio microchannels. Laser power, number of scans, etchant concentration, position of beam waist and scanning speed were taken into consideration as the major process parameters exerting the temperature distribution and the cross sectional profile of etched channels. Experimental results indicated that laser power influences on both etch width and depth while number of scans and scanning speed mainly affect on the etch depth. At a low etchant concentration, the cross sectional profile of an etched channel becomes a U-shape but it gradually turns into a V-shape as the concentration increases. On the other hand, surface of the laser beam focus with respect to the sample surface is found to be a key factor determining the bubble dynamics and thus the process stability. It is demonstrated that metallic microchannels with different cross sectional profiles can be fabricated by properly controlling the process parameters. Microchannels of aspect ratio up to 8 with the width and depth ranges of 8∼32 m and 50∼300 m, respectively, were fabricated.

• Journal of Information Display
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• v.11 no.1
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• pp.12-16
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• 2010

The effect of the crystallization and activated annealing of Si films using an excimer laser and the new CW blue laser are described and compared with furnace annealing for application in advanced TFTs and for future applications. Pulsed excimer laser annealing (ELA) is currently being used extensively as a low-temperature poly-silicon (LTPS) process on glass substrates as its efficiency is high in the ultra-violet (UV) region for thin Si films with thickness of 40-60 nm. ELA enables extremely low resistivity relating to high crystallinity for both the n- and p-type Si films. On the other hand, CW blue laser diode annealing (BLDA) enables the smooth Si surface to have arbitral crystal grains from micro-grains to an anisotropic huge grain structure only by controlling its power density. Both annealing techniques are expected to be applied in the future advanced TFT systems.

• Laser Solutions
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• v.7 no.1
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• pp.37-47
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• 2004

Laser-assisted selective infiltration is a new method of building metal layers to make metal parts layer by layer, in which superheated microscopic metal droplets are infiltrated into a laser-preheated layer of microscopic metal powders. In this work, the selective infiltration of a low melting-point metal, Sn-37Pb wt%, was conducted to investigate the effects of such dominant parameters as superheating temperature, Nd:YAG laser power for preheating, substrate temperature, etc. The optimal conditions for successful selective infiltration of a single layer of microscopic metal powder were experimentally obtained

• Journal of information and communication convergence engineering
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• v.1 no.4
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• pp.228-232
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• 2003

The previous design work for very large final amplifier pumped by electron beam module was described from the point of view of energy characteristics. In this work, the design problems for phase front distortion, ASE, and gain control in large aperture amplifier are presented in detail.

• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2204-2206
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• 1999

Pulsed Nd:YAC laser is used widely for materials processing and instrumentation. It is very important to control the laser energy density in materials processing by a pulsed Nd:YAG laser. A pulse repetition rate and a pulse width are regarded as the most dominant factors to control the energy density of laser beam. In this study, the alternating charge-discharge system was designed to adjust a pulse repetition rate. This system is controlled by one chip microprocessor and allows to replace an expensive condenser for high frequency to a cheap condenser for low frequency. In addition. we have investigated the current pulse shape of flashlamp and the operating characteristics of a pulsed Nd:YAG laser. As a result, it is found that the laser output of the power supply using the alternating charge-discharge system is not less than that of typical power supply. As the pulse repetition rate rises from 30pps to 120pps by the step of 30pps at 1200V, it is found that the laser efficiency decreases but the laser output power increases about 6W at each step.