• The Journal of Korean Institute of Communications and Information Sciences
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• v.12 no.4
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• pp.347-356
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• 1987

This paper is to propose a new line code suitable for a high speed unipolar pulse transmission system, such as a high speed optical digital transmission system. The original information speed can be converted into the transmission speed $\frac{(m+1)}{m}$ by the speed converter. Then this code, named mBiZ code, is generated by means of an Exclusive NOR between the bit stream inserted a space into every m bits and the bit stream delayed by the time slot allocated a single bit at the output coded sequence. Therefore, a mBiZ code can reduce a redundancy in the line code for transmission and its conversion circuits can be devised easily. The mBiZ code can also suppress undesirable long consecuitive identical digits and make line code balance in the mark and space ratio. Therefore, high frequency and low frequency components in power spectrum of a mBiZ code can be suppessed.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.6
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• pp.78-86
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• 2014

In this paper, a novel intensity-based fiber optic vibration sensor using a mass-spring structure, which consists of four serpentine flexure springs and a rectangular aperture within a proof mass, is proposed and its feasibility test is given by the simulation and experiment. An optical collimator is used to broaden the beam which is modulated by the displacement of the rectangular aperture within the proof mass. The proposed fiber optic vibration sensor has been analyzed and designed in terms of the optical and mechanical parts. A mechanical structure has been designed using theoretical analysis, mathematical modeling, and 3D FEM (Finite Element Method) simulation. The relative aperture displacement according to the base vibration is given using FEM simulation, while the output beam power according to the relative displacement is measured by experiment. The simulated sensor sensitivity of $15.731{\mu}W/G$ and detection range of ${\pm}6.087G$ are given. By using reference signal, the output signal with 0.75% relative error shows a good stability. The proposed vibration sensor structure has the advantages of a simple structure, low cost, and multi-point sensing characteristic. It also has the potential to be made by MEMS (Micro-Electro-Mechanical System) technology.

• Korean Journal of Optics and Photonics
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• v.10 no.6
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• pp.500-506
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• 1999

We designed and fabricated a bidirectional optical transceiver module for low cost access network. An integrated chip forming a pin-PD on an 1.3 urn FP-LD was assembled by flip-chip bonding on a Si optical bench, a single mode fiber with an angled end facet was aligned passively with the integrated chip on V-groove of Si-optical bench. Gaussian beam theory was applied to evaluate the coupling coefficients as a function of some parameters such as alignment distance, angle of fiber end facet, vertical alignment error. The theory is also used to search the bottle-neck between transmittance and receiving coupling efficiency in the bi-directional optical system. Tn this paper, we confirmed that reduction of coupling efficiency by the vertical alignment error between laser beam and fiber core axis can be compensated by controlling the fiber facet angle. In the fabrication of sub-module, a'||'&'||' we made such that the fiber facet have a corn shape with an angled facet only core part, the reflection of transmitted laser beam from the fiber facet could be minimized below -35 dE in alignment distance of 2: 30 /J.m. In the same condition, transmitted output power of -12.1 dEm and responsivity of 0.2. AIW were obtained.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.220-226
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• 1997

An optical intensity-type pressure sensor has been fabricated by coupling multimode optical fiber with 100 nm-Au/30 nm-NiCr/150 nm-$Si_3N_4/300 nm-SiO_2/150 nm-Si_3N_4$ optical reflection layer supported by micromachined frame-shape silicon substrate, and its characteristics was investigated. For the application of $Si_3N_4/SiO_2/Si_3N_4$ diaphragm to the optical reflection layer of the sensor, NiCr and Au films were deposited on the backside of the diaphragm by thermal evaporation , respectively, and thus optical low caused by transmission in the reflection layer could be decreased to a few percents. Dielectric diaphragms with uniform thickness were able to be also reproduced because top- and bottom-$Si_3N_4$ layer of the diaphragm could automatically stop silicon anisotropic etching. The respective pressure ranges in which the sensor showed linear optical output power-pressure characteristics were 0~126.64 kPa, 0~79. 98 kPa, and 0~46.66 kPa, and the respective pressure sensitivities of the sensor were about 20.69 nW/kPa, 26.70 nW/kPa, and 39.33 nW/kPa, for the diaphragm sizes of 3$\times$3 $\textrm{mm}^2$, 4$\times$4 $\textrm{mm}^2$, and 5$\times$5 $\textrm{mm}^2$, indicating that the sensitivity increases as diaphragm size increases.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2004.05a
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• pp.29-33
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• 2004

In this paper, we took the basic experiment in order to explore the characteristics of optical CT(optical current transformer) for measuring high current in a superhigh voltage condition using faraday effect and wrote that. We used the 1,310[nm] Laser Diode for the source of light and PIN-Photodiode for receiver. The transmission line of light was composed of the single-mode fiber of 30[m] which could maintain the state of polarization in the optical fiber. The range of current was from 400[A] to 1300[A]. In addition, the temperature ranged from $20[^{\circ}C}]\;to\;50[^{\circ}C]$. In a same experiment condition, a power magnitude increases in proportion as input current is increasing and temperature become low. The maximum ratio of error in temperature of $50[^{\circ}C]$ appears 0.15[%] and the 0.16[%], 1.24[%] and 0.07[%] is ratio of error in respectively $40[^{\circ}C],\;30[^{\circ}C],\;and\;20[^{\circ}C]$.

• Current Optics and Photonics
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• v.7 no.6
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• pp.738-744
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• 2023

Graphene-based saturable absorbers (SAs) are widely used as laser mode-lockers at various laser oscillators. In particular, transmission-type graphene-SAs with ultrabroad spectral coverage are typically manufactured on transparent substrates with low nonlinearity to minimize the effects on the oscillators. Here, we developed two types of transmitting graphene SAs based on CaF₂ and ZnSe. Using the graphene-SA based on CaF₂, a passively mode-locked mid-infrared Cr:ZnS laser delivers relatively long 540 fs pulses with a maximum output power of up to 760 mW. In the negative net cavity dispersion regime, the pulse width was not reduced further by inhomogeneous group delay dispersion (GDD) compensation. In the same laser cavity, we replaced only the graphene-SA based on CaF₂ with the SA based on ZnSe. Due to the additional self-phase modulation effect induced by the ZnSe substrate with high nonlinearity, the stably mode-locked Cr:ZnS laser produced Fourier transform-limited ~130 fs near 2,340 nm. In the stable single-pulse operation regime, average output powers up to 635 mW at 234 MHz repetition rates were achieved. To our knowledge, this is the first attempt to achieve shorter pulse widths from a polycrystalline Cr:ZnS laser by utilizing the graphene deposited on the substrate with high nonlinearity.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.1
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• pp.1-6
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• 2020

In this research, 50 nm thick AlN thin films were deposited on the patterned sapphire (0001) substrate by using HVPE (Hydride Vapor Phase Epitaxy) system and then epitaxial layer structure was grown by MOCVD (metal organic chemical vapor deposition). The surface morphology of the AlN buffer layer film was observed by SEM (scanning electron microscopy) and AFM (atomic force microscope), and then the crystal structure of GaN films of the epitaxial layer structure was investigated by HR-XRC (high resolution X-ray rocking curve). The XRD peak intensity of GaN thin film of epitaxial layer structure deposited on AlN buffer layer film and sapphire substrate was rather higher in case of that on PSS than normal sapphire substrate. In AFM surface image, the epitaxial layer structure formed on AlN buffer layer showed rather low pit density and less defect density. In the optical output power, the epitaxial layer structure formed on AlN buffer layer showed very high intensity compared to that of the epitaxial layer structure without AlN thin film.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.312-312
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• 2013

GaN based light emitting diodes (LEDs) are important devices that are being used extensively in our daily life. For example, these devices are used in traffic light lamps, outdoor full-color displays and backlight of liquid crystal display panels. To realize high-brightness GaN based LEDs for solid-state lighting applications, the development of p-type ohmic electrodes that have low contact resistivity, high optical transmittance and high refractive index is essential. To this effect, indiumtin oxide (ITO) have been investigated for LEDs. Among the transparent electrodes for LEDs, ITO has been one of the promising electrodes on p-GaN layers owing to its excellent properties in optical, electrical conductivity, substrate adhesion, hardness, and chemical inertness. Sputtering and e-beam evaporation techniques are the most commonly used deposition methods. Commonly, ITO films on p-GaN by sputtering have better transmittance and resistivity than ITO films on p-GaN by e-bam evaporation. However, ITO films on p-GaN by sputtering have higher specific contact resistance, it has been demonstrated that this is due to possible plasma damage on the p-GaN in the sputtering process. In this paper, we have investigated the advanced sputtering using plasma damage-free p-electrode. Prepared the ITO films on the GaN based LEDs by e-beam evaporation, normal sputtering and advanced sputtering. The ITO films on GaN based LEDs by sputtering showed better transmittance and sheets resistance than ITO films on the GaN based LEDs by e-beam evaporation. Finally, fabricated of GaN based LEDs by using advanced sputtering. And compared the electrical properties (measurement by using C-TLM) and structural properties (HR-TEM and FE-SEM) of ITO films on GaN based LEDs produced by e-beam evaporation, normal sputtering and advanced sputtering. As a result, It is expected to form plasma damage free-electrode, and better light output power and break down voltage than LEDs by e-beam evaporation and normal sputter.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.9
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• pp.82-90
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• 2014

In this paper, a couple of 4-channel differential transimpedance amplifier arrays are realized in a standard 0.18um CMOS technology for the applications of linear LADAR(laser detection and ranging) systems. Each array targets 1.25-Gb/s operations, where the current-mode chip consists of current-mirror input stage, a single-to-differential amplifier, and an output buffer. The input stage exploits the local feedback current-mirror configuration for low input resistance and low noise characteristics. Measurements demonstrate that each channel achieves $69-dB{\Omega}$ transimpedance gain, 2.2-GHz bandwidth, 21.5-pA/sqrt(Hz) average noise current spectral density (corresponding to the optical sensitivity of -20.5-dBm), and the 4-channel total power dissipation of 147.6-mW from a single 1.8-V supply. The measured eye-diagrams confirms wide and clear eye-openings for 1.25-Gb/s operations. Meanwhile, the voltage-mode chip consists of inverter input stage for low noise characteristics, a single-to-differential amplifier, and an output buffer. Test chips reveal that each channel achieves $73-dB{\Omega}$ transimpedance gain, 1.1-GHz bandwidth, 13.2-pA/sqrt(Hz) average noise current spectral density (corresponding to the optical sensitivity of -22.8-dBm), and the 4-channel total power dissipation of 138.4-mW from a single 1.8-V supply. The measured eye-diagrams confirms wide and clear eye-openings for 1.25-Gb/s operations.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.8
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• pp.905-910
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• 2010

In this paper, visible light communication(VLC) system modulated by a switching driver circuit of lighting light emitting diode(LED), not only for illumination but also for optical wireless communication, is implemented. Presented system could overcome the drawbacks of prior linear modulation technique such as low efficiency, heat generation, and limits to realization of high power lighting LED. Experimental results from the realized digital audio system are presented to confirm the superiority of the proposed circuit. Our prototype achieves a transmission data rate of 10 Mbps with a radius of 1.5 meters using 20 W output power, and the signals were detected successfully.