• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.9
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• pp.944-949
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• 2003

In this paper, the double balance mixer(DBM) for Ku-band LNB using InGaP/GaAs HBT process is suggested for the characteristics of low DC power consumption, low noise figure, low intermodulation distortion and wide dynamic range. The 5 dB conversion gain, 14 dB NF, bandwidth 17.9 GHz and 50.34 dBc IMD are obtained under RF input power of -23 dBm, with bias condition as 3 V and 16 mA. The linearity of InGaP/GaAs HBT, the broad band input matching scheme and the optimization of bias point result in the low IMD, the broad bandwidth and the low power consumption characteristics.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.1 s.104
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• pp.45-51
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• 2006

In this paper, a new predistortion linearizer for controlling the amplitude of low frequency intermodulation distortion signals is proposed. The low frequency intermodulation distortion(IMD) components are generated by harmonic generator. A vector modulator, modulate fundamental signal with low frequency IMD signals, generates predistortion IMD signals and controls amplitude and phase of them with modulation factors. As a result, this predistorter is suppressed IMD signals of power amplifier effectively. The predistortion linearizer has been manufactured to operate in cellular base-station transmitting band($869{\sim}894\;MHz$). The experimental results show that IMD3 of power amplifier are improved more than 20 dB for CW two-tone signals. Also, it's improved the adjacent channel power ratio(ACPR) more than 10 dB for IS-95 CDMA IFA signals.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.2 s.105
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• pp.129-133
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• 2006

In spite of the advantage of simple circuit, small size, and low price, predistortered power amplifier does not satisfy the IMD specification at low power range because of an IMD hump characteristic. To reduce the performance degradation by IMD hump, the method which is to control the operating point of amplifier according to its output power is presented. This method using envelope detection bias control is applied to the implemented class AB predistortered 16 W power amplifier. The measured result shows 10 dB improvement of $3^{rd}$ IMD performance in wide dynamic range of output power.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.8 no.6
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• pp.558-567
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• 1997

Linear power amplifier modules with high-efficiency have been developed for PCS handy phone. These modules were designed using extracted large-signal models of MESFETs and harmonic balance simulation. The modules are intended for low-tier and high-tier at the operation frequency range of 1750 ~ 1780 MHz. For low-tier module, the output power and $IMD_3$ were 23.2 dBm and 31 dBc, respectively, at power-added efficiency of 34% with the supply drain bias of 3.6 V. For high-tier module, the output power and $IMD_3$ were 272.2 dBm and 31 dBc, respectively, at power-added efficiency of 33% with the supply drain bias of 4.2 V. These linear power amplifier modules are suitable for PCS handy phone.

• Smart Structures and Systems
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• v.23 no.6
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• pp.589-613
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• 2019

Cables are prone to vibration due to their low inherent damping characteristics. Recently, negative stiffness dampers have gained attentions, because of their promising energy dissipation ability. The viscous inertial mass damper (termed as VIMD hereinafter) can be viewed as one realization of the inerter. It is formed by paralleling an inertial mass part with a common energy dissipation element (e.g., viscous element) and able to provide pseudo-negative stiffness properties to flexible systems such as cables. A previous study examined the potential of IMD to enhance the damping of stay cables. Because there are already models for common energy dissipation elements, the key to establish a general model for IMD is to propose an analytical model of the rotary mass component. In this paper, the characteristics of the rotary mass and the proposed analytical model have been evaluated by the numerical and experimental tests. First, a series of harmonic tests are conducted to show the performance and properties of the IMD only having the rotary mass. Then, the mechanism of nonlinearities is analyzed, and an analytical model is introduced and validated by comparing with the experimental data. Finally, a real-time hybrid simulation test is conducted with a physical IMD specimen and cable numerical substructure under distributed sinusoidal excitation. The results show that the chosen model of the rotary mass part can provide better estimation on the damper's performance, and it is better to use it to form a general analytical model of IMD. On the other hand, the simplified damper model is accurate for the preliminary simulation of the cable responses.

• 전자공학회논문지 IE
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• v.47 no.4
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• pp.34-38
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• 2010

In this paper, we suggest DCU(Digital Control Unit) for performance improvement and stability security of base station power amplifier. The designed DCU controls electric power that is supplied to power amplifier. When the regular input is 10dBm, the regular output is measured 47.8dBm and the results are compared between the case of the applying and the non-applying the DCU. We got the result that PA system is very stable as DCU are very well operating in the boundary degradation of IMD by the over-power level input.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.9
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• pp.55-59
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• 2008

In this paper, the linearity of Doherty amplifier has been improved by applying a compact slow-wave microstrip branch-line coupler on the output of Doherty amplifier. The proposed branch coupler has four microstrip high-low impedance resonant cells periodically placed inside the branch-line coupler to result in high slow-wave effect. The new coupler not only effectively reduces the occupied area to 30% of the conventional branch-line coupler at 1.8GHz, but also has high second harmonic suppression performance. We obtained the 3rd-order intermodulation distortion ($IMD_3$) of -31.16 dBc for CDMA applications with that of maintaining the constant power added efficiency (PAE). The IMD3 performance is improved as much as -7 dBc compared with a Doherty amplifier.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.937-939
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• 2007

Carbon nanotubes (CNTs) have used as an electron field emitter of the field emission display (FED) due to their characteristics of high-electron emission, rapid response and low power consumption. However, to commercialize the FED with CNT emitter, some fundamental problems regarding life time and emission efficiency have to be solved. In this study, we investigated the $TiO_2$ coated CNT as a field emitter. $TiO_2$ nanoparticles can coated on CNT surface by chemical solution method. $TiO_2$ nanoparticles had uniform size with the average size of about 2.4 nm to 3.1 nm. Field emission performance of CNT coated with $TiO_2$ nanoparticles was evaluated and discussed.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.1
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• pp.15-21
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• 1999

A new design of RF automatic gain control amplifier with low phase shift attenuator is proposed. By using the RF AGC amplifier, the output level of amplifier becomes to be constant. The error is 0.1dB. In addition, for arbitrary RF input power, it is possible to design the gain of amplifier to be fixed. If the constant gain is maintained, it is more reliable to make wanted IMD(Intermodulation Distortion) characteeristic amplifier.