• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.11
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• pp.1235-1239
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• 2010

In this work, a wideband technique has been proposed that improves the IF bandwidth of mixers and a 24-GHz down-conversion mixer employing the proposed technique has been designed and fabricated based on 0.13-${\mu}m$ RFCMOS technology. The mixer showed the conversion gain of $2.7{\pm}1.5$ dB from DC to 5.25 GHz IF for a fixed LO frequency of 24 GHz. Measured P-1dB and LO-RF isolation was -8.7 dBm and 21 dB, respectively. The mixer draws DC current of 10.6 mA from 1.3 V supply.

• Journal of IKEEE
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• v.8 no.1 s.14
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• pp.73-78
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• 2004

In this paper, it is designed for 5.8GHz Wireless LAN sub harmonic resistive mixer. Sub harmonic resistive mixer is constituted by advantage of sub harmonic mixer and resistive mixer. Sub harmonic resistive mixers mix harmonics of LO with RF and obtain IF frequency. Therefore, it was possible to use decreasing LO frequency than conventional mixers. And, Sub harmonic resistive mixer has low IMD because of using unbiased channel resistance of GaAs FET. When LO power is 13dBm, the conversion loss of manufactured sub harmonic resistive mixer is 10.67 dB. And IIP3 of mixer is 21.5dBm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.2
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• pp.169-179
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• 1999

In this paper, a GaAs MESFET single-ended resistive mixer with high linearity and isolation is designed. The bias voltage of this mixer is applied only gate of GaAs MESFET to use the channel resistance. The LO is applied the gate and the RF is applied the drain through 7-pole hairpin bandpass filter to obtain the proper isolation thru LO-RF. The IF is extracted from the source with short circuit and lowpass filter. Using extracted equivalent circuits for LO and RF, conversion loss is calculated and compared with result of harmonic balance analysis. Measured conversion loss of this S-band down converter mixer is 8.2~10.5dB by considering the measured 3.0~3.4dB RF 7-pole hairpin bandpass filter loss and IP3in is 26.5dBm at Vg=-0.85~-1.0V in distortion performance.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.5
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• pp.1023-1028
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• 2012

A MMIC (Monolithic Microwave Integrated Circuit) mixer chip using the Schottky diode of an GaAs p-HEMT process has been developed for the I/Q demodulator of non-contact near field microwave probing system. A single balanced mixer type is adopted to achieve simple structure of the I/Q demodulator. A quadrature hybrid coupler and a quarter wavelength transmission line for 180 degree hybrid are realized with lumped elements of MIM capacitor and spiral inductor to reduce the mixer chip size. According to the on-wafer measurement, this MMIC mixer covers RF and LO frequencies of 1650MHz to 2050MHz with flat conversion loss. The MMIC mixer with miniature size of $2.5mm{\times}1.7mm$ demonstrates conversion loss below 12dB for both variations of RF and LO frequencies, LO-to-IF isolation above 43dB and RF-to-IF isolation above 23dB, respectively.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.30 no.11A
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• pp.1104-1109
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• 2005

In this paper, a Ka-band harmonic mixer is designed and fabricated on the base of the multiplier theory that there is a bias point to maximize the third harmonic order($3f_{LO}$) with respect to a fundamental LO frequency($f_{LO}$), which can make the high-order mixing element($f_{RF}{\pm}3f_{LO}$) to be greater than other mixing elements, Pumping a RF frequency($f_{RF}$) and LO frequency($f_{LO}$). The harmonic mixer by the proposed design method is fabricated by using a commercial GaAs MESFET device with a plastic package and overcome these disadvantages that a conventional mixer in Ka-band suffer from a high cost, inefficient productivity and circuit complexity. The harmonic mixer have a -10 dB conversion loss at the IF Sequency($3f_{LO}-f_{RF}$=1.0GHz) by selecting a gate bias voltage for the maximum third-order LO harmonic element($3f_{LO}$=34.5 GHz) as pumping LO frequency($f_{LO}$=11.5 GHz) With respect to RF Sequency ($f_{RF}$=33.5GHz)

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.6 s.348
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• pp.46-52
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• 2006

We report on a high performance 94 GHz MMIC resistive mixer using 70-nm metamorphic high electron mobility transistor (MHEMT) and micro-machined W-band ring coupler. A novel 3-dimensional structure of resistive mixer was proposed in this work, and the ring coupler with the surface micro-machined dielectric-supported air-gap microstrip line (DAMLs) structure was used for high LO-RF isolation. The fabricated mixer showed an excellent LO-RF isolation of -29.3 dB and a low conversion loss of 8.9 dB at 94 GHz. To our knowledge, compared to previously reported W-band mixers, the proposed MHEMT-based resistive mixer using micro-machined ring coupler has shown superior LO-RF isolation as well as similar conversion loss.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.4
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• pp.599-609
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• 2000

In this paper, sub-harmonically pumped single balanced resistive mixers are presented . Frequency bandwidth is selected for a Ku-band, which is 11.75-12.25GHz for RF, 5.375∼5.625 GHz for LO, and 1 GHz for IF signals. A rat-race hybrid is designed for the accomplishment of single balanced type. A low pass filter (LPF) with photonic band gap(PBG) structure is used for good conversion loss and unwanted harmonics suppression. Two types of mixers are suggested, which are one with no gate bias for no DC power consumption and the other with the IF amplifier for conversion gain. When a LO signal with the power of 6 dBm at 5.5 GHz is injected, a conversion loss of 12.17dB and a conversion gain of 7.83 dB are obtained for each mixer. For the both mixers , LO to RF isolation of 20 dB and LO to IF isolation of 60dB are obtained. With the RF power of -30dBm to -3dBm, the mixer shows linear characteristics region of IF. this mixer can be applied for Ku-band and other microwave communication systems.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.7
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• pp.669-674
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• 2011

In this paper, a method for reduction of spurious signal in Digital RF Memory(DRFM) is proposed. Spurious response is a major performance issue of DRFM. This method is based on mixing a random phase LO signal into input IF signal and sampling it. The random phase LO signal is generated by high speed phase shifting characteristic of Direct Digital Synthesizer(DDS). Through this technique, we achieved an enhancement of 5~10 dB of spurious response.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.7
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• pp.675-678
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• 2015

In this paper, we proposed a multi-function conversion block for microwave receiver. The proposed multi-function conversion block is composed of a broadband voltage controlled oscillator and a dual-mode mixer. Depending on whether the bias voltage is supplied, the first IF(Intermediate Frequency) output frequency(4,595 MHz/6,045 MHz) needed in microwave receiver is converted to 720 MHz and the another IF output frequency(720 MHz) for receiving Ku-band has the multi-functional operations of the dual mode that are bypass and attenuation without frequency conversion. Implementation and measurement results show that each intermediate frequency has conversion loss characteristic according to the LO power. The LO power conversion loss of 4,595 MHz at the LO levels from 2 dBm to 4 dBm is 13 dB, another of 6,035 MHz is 12 dB and the other of 720 MHz is 7.0 dB.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.2 no.2 s.3
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• pp.97-101
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• 2003

A MMIC (monolithic microwave integrated circuit) mixer chip using the Schottky diode of an InGahs/CaAs p-HEMT process has been developed for the receiver down converter of Ku-band. A different approach to the MMIC mixer structure is applied for reducing the chip size by the exchange of ports between If and LO. This MMIC covers with RF (14.0 - 14.5 GHz) and If (12.252 - 12.752 GHz). According to the on-wafer measurement, the miniature (3.3X3.0 m) MMIC mixer demonstrates conversion loss below 9.8 dB, RF-to-IF isolation above 23 dB, LO-to-IF isolation above 38 dB, respectively.