• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.05a
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• pp.485-486
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• 2012

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.1267-1268
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• 2013

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.359-362
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• 2004

Electron beam on high energy acceleration, which travels deeply and sharply through photoresist, became to be used in e-beam lithography apparatus for nano-patterning in due to its high resolution. An advanced electron beam lithography simulation tool is currently undergoing development for nano-patterning. This paper will demonstrate such simulation efforts with experiments at 200 keV e-beam lithography processes on PMMA, ZEP520 of which photoresist parameters and characteristics will be explained with simulation results. Neureuther parameters was extracted from the contrast curve of the resist

• Proceedings of the Optical Society of Korea Conference
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• 2003.07a
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• pp.64-65
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• 2003

Stereo-lithography using the two photon absorption(TPA) makes micro structures with great resolution. The technique is applied to correcting photomask, 3-D photonic crystal, 3-D optical storage, 3-D lithography and so on. In contrast to a conventional stereo-lithography with single-photon absorption which has a size problem caused by the geometrical diffraction limit, the stereo-lithography with TPA has no size limit. (omitted)

• Transactions of the Korean Society of Mechanical Engineers A
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• v.30 no.10 s.253
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• pp.1314-1319
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• 2006

This paper describes the novel fabrication method of the high-aspect-ratio nano structure which is impossible by conventional method using a shadow mask and a Deep X-ray Lithography (DXRL). The shadow mask with $1{\mu}m-sized$ apertures is fabricated on the silicon membrane using a conventional UV-lithography. The size of aperture is reduced to 200nm by accumulated low stress silicon nitride using a LPCVD (low pressure chemical vapor deposition) process. The X-ray mask is fabricated by depositing absorber layer (Au, $3{\mu}m$) on the back side of nano shadow mask. The thickness of an absorber layer must deposit dozens micrometers to obtain contrast more than 100 for a conventional DXRL process. The thickness of $3{\mu}m-absorber$ layer can get sufficient contrast using a central beam stop method, blocking high energy X-rays. The nano circle and nano line, 200nm in diameter in width, respectively, were demonstrated 700nm in height with a negative photoresist of SU-8.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.498-501
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• 2005

Photonic crystals, periodic structure with a high refractive index contrast modulation, have recently become very interesting platform for manipulation of light. The existence of a photonic bandgap, a frequency range in which propagation of light is prevented in all direction, makes photonic crystal very useful in application where spatial localization of light is required for waveguide, beam splitter, and cavity. But fabrication of 3 dimensional photonic crystal is still difficult process. a concept that has recently attracted a lot of attention is a planar photonic crystal based on a dielectric membrane, suspended in the air, and perforated with 2 dimensional lattice of hole. We show that the polymer slabs suspended in air with triangular lattice of air hole can exhibit the in-plane photonic bandgap for TE-like modes. The fabrication of Si master with pillar structure using hot embossing process was investigated for 2 dimensional low-index-contrast photonic crystal waveguide.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.912-915
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• 2004

A vacuum environment is very important for NGL(Next Generation Lithography) apparatuses such as EUVL(Extreme Ultra Violet Lithography) or EPL(Electron Projection Lithography) and so on. The performance of these systems is dominated by vacuum level of processing and positioning accuracy of a stage. So, ultra-precision stage usable in a high vacuum level is needed for the improved performance of these devices. In contrast to atmospheric condition, a special attention must be paid to guide bearing, actuator and other elements. In this paper, air bearing is adopted because of its very high motional accuracy. So, air bearing is designed to be vacuum compatible using differential exhaust method, which prevents air from entering into vacuum chamber. For this, leakage analysis is performed theoretically and verified from experiment.

• Journal of the Optical Society of Korea
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• v.20 no.2
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• pp.251-256
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• 2016

The prediction of thermal effects in lithography projection objective plays a significant role in the real-time dynamic compensation of thermal aberrations. For the illuminated lithography projection objective, this paper applies finite element analysis to get the temperature distribution, surface deformation and stress data. To improve the efficiency, a temperature distribution function model is proposed to use for the simulation of thermal aberrations with the help of optical analysis software CODE V. SigFit is approved integrated optomechanical analysis software with the feature of calculating OPD effects due to temperature change, and it is utilized to prove the validation of the temperature distribution function. Results show that the impact of surface deformation and stress is negligible compared with the refractive index change; astigmatisms and 4-foil aberrations dominate in the thermal aberration, about 1.7 λ and 0.45 λ. The system takes about one hour to reach thermal equilibrium and the contrast of the imaging of dense lines get worse as time goes on.

• Current Optics and Photonics
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• v.7 no.6
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• pp.638-654
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• 2023

Holography is generally known as a technology that records and reconstructs 3D images by simultaneously capturing the intensity and phase information of light. Two or more interfering beams and illumination of this interference pattern onto a photosensitive recording medium allow us to control both the intensity and phase of light. Holography has found widespread applications not only in 3D imaging but also in manufacturing. In fact, it has been commonly used in semiconductor manufacturing, where interference light patterns are applied to photolithography, effectively reducing the half-pitch and period of line patterns, and enhancing the resolution of lithography. Moreover, holography can be used for the manufacturing of 3D regular structures (3D photonic crystals), not just surface patterns such as 1D or 2D gratings, and this can be broadly divided into (i) holographic recording and (ii) holographic lithography. In this review, we conceptually contrast two seemingly similar but fundamentally different manufacturing methods: holographic recording and holographic lithography. We comprehensively describe the differences in the manufacturing processes and the resulting structural features, as well as elucidate the distinctions in the diffractive optical properties that can be derived from them. Lastly, we aim to summarize the unique perspectives through which each method can appear distinct, with the intention of sharing information about this field with both experts and non-experts alike.

• Journal of the Semiconductor & Display Technology
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• v.9 no.4
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• pp.13-18
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• 2010

Extreme ultraviolet (EUV) lithography using 13.5 nm wavelengths is expected to be adopted as a mass production technology for 32 nm half pitch and below. One of the new issues introduced by EUV lithography is the shadowing effect. Mask shadowing is a unique phenomenon caused by using mirror-based mask with an oblique incident angle of light. This results in a horizontal-vertical (H-V) biasing effect and ellipticity in the contact hole pattern. To minimize the shadowing effect, a refilled mask is an available option. The concept of refilled mask structure can be implemented by partial etching into the multilayer and then refilling the trench with an absorber material. The simulations were carried out to confirm the possibility of application of refilled mask in 32 nm line-and-space pattern under the condition of preproduction tool. The effect of sidewall angle in refilled mask is evaluated on image contrast and critical dimension (CD) on the wafer. We also simulated the effect of refilled absorber thickness on aerial image, H-V CD bias, and overlapping process window. Finally, we concluded that the refilled absorber thickness for minimizing shadowing effect should be thinner than etched depth.