• 제목/요약/키워드: Lithographic pattern

검색결과 12건 처리시간 0.029초

Focused Ion Beam을 이용한 EUVL Mask Defect Isolation 및 Repair (EUVL Mask Defect Isolation and Repair using Focused Ion Beam)

  • 김석구;백운규;박재근
    • 반도체디스플레이기술학회지
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    • 제3권2호
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    • pp.5-9
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    • 2004
  • Microcircuit fabrication requires precise control of impurities in tiny regions of the silicon. These regions must be interconnected to create components and VLSI circuits. The patterns to define such regions are created by lithographic processes. In order to image features smaller than 70 nm, it is necessary to employ non-optical technology (or next generation lithography: NGL). One such NGL is extreme ultra-violet lithography (EUVL). EUVL transmits the pattern on the wafer surface after reflecting ultra-violet through mask pattern. If particles exist on the blank mask, it can't transmit the accurate pattern on the wafer and decrease the reflectivity. It is important to care the blank mask. We removed the particles on the wafer using focused ion beam (FIB). During removal, FIB beam caused damage the multi layer mask and it decreased the reflectivity. The relationship between particle removal and reflectivity is examined: i) transmission electron microscope (TEM) observation after particle removal, ii) reflectivity simulation. It is found that the image mode of FIB is more effective for particle removal than spot and bar mode.

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소프트 리소그라피를 이용한 마이크로유체 채널 내의 단백질 및 세포 패터닝 (Soft lithographic patterning of proteins and cells inside a microfluidic channel)

  • 서갑양
    • 한국진공학회지
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    • 제16권1호
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    • pp.65-73
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    • 2007
  • 마이크로유체 채널 내에서 표면 성질과 기능성 분자들의 공간적인 위치를 제어하는 것은 진단소자, 마이크로 반응기, 또는 세포와 마이크로 유체역학의 기본적인 연구를 일해 매우 중요하다. 이 논문에서는 소프트 리소그라피 방법을 이용하여 채널 안에 패턴된 구조물을 포함하는 안정적인 마이크로 채널을 제작하는 방법을 소개하려 한다. 먼저 패턴된 영역을 폴리디메틸실록세인(PDMS) 몰드의 치수와 제작 과정을 적당히 조절함으로써 산소 플라즈마로부터 보호한다. 마이크로 구조물은 대표적인 생물오손(biofouling) 억제 물질인 폴리에틸렌 글리콜(PEG)계 공중합 고분자 혹은 다당류인 히알루산(HA)을 패턴하여 얻었으며 이러한 패턴을 이용하여 피브로넥틴(FN), 소의 혈장 알부민(BSA) 등의 단백질과 동물 세포의 어레이를 제작하였다.

포토 레지스트의 기술 동향과 화학 증폭형 포토레지스트에서의 광산 발생제의 연구 (Technology Trends for Photoresist and Research on Photo Acid Generator for Chemical Amplified Photoresist)

  • 김성훈;김상태
    • 통합자연과학논문집
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    • 제2권4호
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    • pp.252-264
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    • 2009
  • Lithographic data obtained from PHS(polyhydroxy styrene) having various functionalities were investigated by using a photoacid generator based on diazo and onium type. Chemically amplified photoresist based on the KrF type photoresist was developed by using a photoacid generator and multi-functional resin. Thermal stability for the photoacid generator showed that the increase of loading amount of photoacid generator resulted in the decrease of glass transintion temperature (Tg). The photoacid generators having methyl, ethyl, or propyl group in their cationic structure produced T-top structure in pattern profile due to the effect of acid diffusion during the generation of acid in the resist. The increase of carbon chain length in the anionic structure of photoacid generators resulted in lower pattern resolution due to the interruption of acid diffusion.

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레이저 공정을 이용한 고온초전도 멀티플렉서의 제작과 특성 분석 (Investigation of Characterization and Fabrication High-Temperature Superconducting Multiplexer by Pulse laser Deposition)

  • 김철수;송석천;이상렬
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 D
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    • pp.1858-1860
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    • 1999
  • To fabricate superconducting multiplexers with narrow pass band characteristics and reduce the physical size of device, we have designed multiplexer using hair-pin type filters with the center frequency of 13.6 GHz. Multiplexers have been fabricated superconductor(HTS), because It has low surface resistance. The $YBa_2Cu_3O_{7-{\delta}}$(YBCO) films were deposited on MgO substrates$(20{\times}20{\times}0.5mm^3)$ by using pulsed laser deposition and conventional photo-lithographic methods were used to pattern the multiplexer. Epitaxial YBCO films were grown on(100) MgO substrates and showed strongly c_axis orientations observed by X-ray diffraction technique. Superconducting transition temperatures were measured to be about 89K. Simulated results of superconducting multiplexer consisting of hair-pin type filters show the insertion loss of about 1.2dB. The measured frequency response will be compared with the simulated results.

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광조형용 CAD/CAM 시스템 개발 (CAD/CAM System development for Stereolitihography)

  • 홍삼열;김준안;반갑수;백인환
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 1996년도 춘계학술대회 논문집
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    • pp.592-596
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    • 1996
  • The CAD/CAM System oriented to StereoLithographic Rapid Prototyping was constructed and developed. The software architecture uses a 586PC running the windows NT operating system. An .STL file brought into the software program can be verified in divers view points and focused for a detail of concern. A variety of Entity was applied to define an array of triangular facets and sliced loops. The system provides Edit, Scale, Orient, Copy and Divide commands to modify .STL model. The NC codes are created according to various laser beam scan pattern and the software show the parts on the platform before they are constructed. This system is written in Visual C and has been proved as a powerful tool for producing solid parts directly from a CAD modelling, using actual applications.

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Capillary Force Lithographic Patterning of a Thermoplastic Polymer Layer for Control of Azimuthal Anchoring in Liquid Crystal Alignment

  • Kim, Hak-Rin;Shin, Min-Soo;Bae, Kwang-Soo;Kim, Jae-Hoon
    • Journal of Information Display
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    • 제9권1호
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    • pp.14-19
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    • 2008
  • We demonstrated the capillary force lithography (CFL) method for controlling the azimuthal anchoring energy of a liquid crystal (LC) alignment layer. When a thermoplastic polymer film is heated to over the glass transition temperature, the melted polymer is filled into the mold structure by the capillary action and the aspect ratio of the pattern is determined by the dewetting time of the CFL process. Here, the proposed method showed that the azimuthal anchoring energy of the LC alignment layer could be simply controlled by the surface relief patterns which were determined by the dewetting times during the CFL patterning.

플라즈마중합 (MMA-Sty-TMT) 박막의 레지스트 특성조사 (A study on the resist characteristics of plasma polymerized thin film of (MMA-Sty-TMT))

  • 박종관;박상현;박복기;정해덕;한상옥;이덕출
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1994년도 하계학술대회 논문집 C
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    • pp.1268-1270
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    • 1994
  • Fine lithographic technology in a submicron design regime is necessary for the fabrication of VLSI circuits. In such lithography, fine pattern delineation is performed by electron beam, ion beam and X-ray lithography instead of photolithography. Therefore, the new resist materials and development method have been required. So, we are investigating another positive E-beam resists which have high sensitivity and dry etching resistance, Plasma co-polymerized resist was prepared using an interelectrode gas-flow-type reacter. Methymethacrylate, tetramethyltin and styrene were chosen as the monomer to be used. The delineated pattern in the resist was developed with gas-flow-type reactor using an argon and 02 as etching gas. We studied about the effects of discharge power and mixing rate of the co-polymerized thin :film. The molecular structure of thin film was investigated by ESCA and IR, and then was discussed in relation to its quality as a resist.

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Photopatternability of Poly(vinylcarbazole) Bearing Cinnamate Pendants and Its Blends with a Soluble Poly(p-phenylene vinylene) Derivative

  • Yu, Young-Jun;Lee, Seung-Hun;Choi, Dong-Hoon;Jin, Jung-Il;Tessler, Nir
    • Macromolecular Research
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    • 제15권2호
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    • pp.142-146
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    • 2007
  • Poly[(1-(9-carbazoly1)ethylene)-co-(3-cinnamoyloxyoctyl-9-carbazolyl)] ethylene (PVK-Cin) was prepared by tethering cinnamate pendants to a carbazole group via an octylene spacer. The photopatternability of the new PVK based-polymer was investigated using a photocrosslinking reaction under UV light illumination $(\lambda=254nm)$. Blends of the PVK-Cin and a soluble poly(phenylene vinylene) (CzEh-PPV) were employed to study the photocrosslinking behavior. Well resolved lithographic patterns were observed in these polymer systems. PVK-Cin produced a blue light emitting pattern both before and after the photocrosslinking reaction. The blends of PVK-Cin and CzEh-PPV also showed corresponding emissions at 398 and 525 (560) nm in the film state.

A Facile Method for Micropatterning of Gold Nanoparticles Immobilized on UV Cross-linked Polymer Thin Films

  • Kim, Min-Sung;Jeong, Yeon-Tae
    • Transactions on Electrical and Electronic Materials
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    • 제10권3호
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    • pp.85-88
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    • 2009
  • This report demonstrates the immobilization of uniformly sized gold nanoparticles (AuNPs) on UV cross-linked poly(4-vinylpyridine) (P4VP) polymer thin films and the preparation of micropatterned structures of AuNPs on these films. The polymer thin films were prepared by a spin-coating of P4VP onto a cleaned silicon wafer surface. Upon UV irradiation, these films were then photo cross-linked. Gold nanoparticles were immobilized by immersing the polymer surface in a colloidal solution of gold nanoparticles stabilized by citric acid. The morphology of the films and the immobilization of AuNPs were studied by atomic force microscopy (AFM) and UV-visible spectroscopic techniques. The micropatterned gold structures that were produced on the polymer surface are delineated by combining with the photolithographic method. While untreated and simply spin coated films were physisorbed and unstable that could be easily removed by rinsing with a solvent, the cross-linked and AuNPs immobilized P4VP films were found to be highly stable even after repeated solvent extractions.

1H,1H,2H,2H-퍼플로로데실메타크릴레이트와 tert-부틸메타크릴레이트로 구성된 공중합체의 합성 및 이산화탄소에서의 리소그라피 특성에 관한 연구 (Synthesis of Copolymers Composed of 1H,1H,2H,2H-perfluorodecylmethacrylate and tert-butylmethacrylate and Their Lithographic Properties in Carbon Dioxide)

  • 황하수;이진균;박인;허훈;임권택
    • 공업화학
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    • 제19권4호
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    • pp.402-406
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    • 2008
  • 자유 라디칼 중합법으로 친 이산화탄소성 단량체인 퍼플로로데실메타크릴레이트(FDMA)와 산에 불안정한 단량체인 tert-부틸메타크릴레이트(TBMA)로 구성된 랜덤 공중합체를 합성하였다. 합성된 공중합체의 이산화탄소에 대한 용해도 특성 및 365 nm 노광에서의 포토레지스트 감도 특성에 관하여 조사하였다. 또한, 랜덤 공중합체를 이용하여 형성된 패턴을 플라즈마 에칭을 통해 전도성 고분자인 poly(styrenesulfonate): poly(3,4-ethylenedioxythiophene) (PSS : PEDOT)에 전사하여 미크론크기의 PSS : PEDOT 패턴을 제조할 수 있었다.