• 한국재료학회지
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• 제9권4호
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• pp.414-418
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• 1999

Typical metal oxide thin films having optical and electrical properties are widely used as inorganic functional materials. Liquid phase deposition(LPD) method, a new low temperature process, has been developed for the several advantages of no vacuum system, low cost, high throughput, and low processing temperature(<$50^{\circ}C$). Silica powder was added to 40wt% hydrofluoro-silicic acid($H_2$SiF\ulcorner) to obtain an immersing solution of silica-saturated hydrofluorosilicic acid solution. Boric acid solution was continuously added in the range from 0 to 0.05M to prepare supersaturated hydrofluorosilicic acid solution. LPD $SiL_2$film was formed with the variation of added amount of $H_2$O. The SiO$_2$thin film could be prepared from hydrofluorosilicic acid by LPD method. The thickness of LPD $_SiO2$film was influenced by the boric acid concentration and added amount of $H_2$O. Silicon in thin film existed as SiF\ulcorner by Raman spectrum.

• 한국세라믹학회지
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• 제40권3호
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• pp.213-218
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• 2003

Band gap energies of SrTiO$_3$(STO) thin film on glass substrates were studied in terms of annealing temperature. The STO thin film was fabricated by our newly developed method based on the combination of the Self-Assembled Monolayer(SAM) technique and the Liquid Phase Deposition(LPD) method. The as-deposited film demonstrated a direct band gap energy of about 3.65 eV, which further increased to 3.73 eV and 3.78 eV by annealing at 40$0^{\circ}C$ and 50$0^{\circ}C$, respectively. The band gap energy saturated at about 3.70 eV for the crystallized film which was obtained by annealing at 600-$700^{\circ}C$. The relatively large band gap energies of our crystallized films were due to the presence of minor amorphous phase, grain boundaries and oxygen vacancies generated by annealing in air.

• 한국결정성장학회지
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• 제19권5호
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• pp.262-267
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• 2009

초발수 $TiO_2$ 박막을 습식 공정법에 의해 유리 기판 위에 성공적으로 제조하였다. Micro-nano 복합구조의 거친 표면을 갖는 박막을 제조하기 위하여 layer-by-layer(LBL) deposition 법과 liquid phase deposition(LPD) 법이 이용되었다. 초발수 박막은 LBL 법에 의해 texture 구조를 갖는(PAH/PAA) 박막을 제조 한 후 그 위에 LPD 법에 의해 $TiO_2$ 나노 입자를 적층시키고 그 표면을 fluoroalkyltrimethoxysilane(FAS)를 사용하여 발수 처리를 하여 제조하였다. $(PAH/PAA)_{10}$ 박막의 표면에 45분 동안 $TiO_2$를 적층한 박막은 RMS roughness가 65.6 nm로 거친 표면을 보여주었고 발수 처리 이후에 접촉각 $155^{\circ}$ 정도의 초발수 특성과 함께 파장 650 nm 이상에서는 80% 이상의 투과율을 보여주었다. 서로 다른 조건에서 제조된 박막의 표면 구조,광학적 특성, 접촉각을 FE-SEM, AFM, UV-Vis, contact angel meter를 이용하여 측정하였다.

• 한국세라믹학회지
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• 제43권11호
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• pp.703-709
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• 2006

We report on the synthesis of highly uniform, single phase zinc and cobalt thin films prepared by the Liquid Phase Deposition (LPD) method. X-Ray diffraction, TGA and EDX measurements support the assumption that the as deposited films are constituted by a mixture of crystallized FeOOH and amorphous M(OH)$_2$ (M=Co, Zn) which is converted upon heat treatment in air at 600?C into the corresponding zinc ferrites. The films with adjustable chemical compositions are identified with a crystal structure as spinel-type and present a spherical or rod-like microstructure, depending on the both the nature and concentration of the divalent transition metal ions. Zinc ferrite thin films present a superparamagnetic behavior above blocking temperatures which decrease with increasing the Zn content and are ferromagnetic at 5 K with coercivities ranging between 797.8 and 948.5 Oe, whereas the cobalt ferrite films are ferromagnetic at room temperature with magnetic characteristics strongly dependent on the chemical composition.

• 한국결정성장학회지
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• 제19권6호
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• pp.288-292
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• 2009

LPD법을 이용하여 유리 기판 위에 발수/친수 패터닝 기판을 제조하였다. 발수 표면은 거친 표면을 갖는 ZnO 박막을 FAS를 이용한 표면 개질에 의하여 만들어졌고, 친수 표면은 자외선을 조사하여 FAS를 제거함으로써 만들어졌다. Hexagonal ZnO rod는 LPD법에 의하여 ZnO seed 층이 코팅된 유리 기판 위에 수직으로 성장되었다. 침적시간이 증가함에 따라 ZnO rod의 직경과 두께는 증가하였다. 제조된 ZnO 박막의 표면구조, 두께, 결정구조, 투과율과 접촉각은 FE-SEM, XRD, UV-vis와 contact angle meter를 이용하여 측정하였다. $20^{\circ}{\sim}30^{\circ}$의 접촉각을 갖는 친수 ZnO 박막은 FAS 표면 처리에 의해 $145^{\circ}{\sim}161^{\circ}$의 접촉각을 갖는 표면으로 바뀌었다. 제조된 발수 표면은 $300\;{\mu}m$, 3 mm의 dot size를 갖는 shadow mask를 이용하여 자외선을 조사하여 패터닝 되었다. 최종적으로 자외선이 조사된 발수 표면은 친수 표면으로 바뀌었다.