• 마이크로전자및패키징학회지
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• 제29권2호
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• pp.33-41
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• 2022

최근 플렉시블 전자소자의 안정적인 전기적 연결을 위한 유연전도성 접합 기술의 연구 필요성이 대두되고 있다. 기존의 금속 납땜 접합에서 발생하는 기계적 파손 문제는 탄성 계수가 작거나 두께가 얇은 재료를 기반으로 제작된 유연전도성 접합을 통해 해결할 수 있다. 기계적 특성을 향상시키는 동시에 안정적인 전기적 연결이 가능하도록 높은 전기전도도를 가진 물질을 박막화하거나, 작은 탄성 계수를 가진 물질에 혼합하는 방식 등으로 형성된다. 대표적인 유연전도성 접합 기술로는 박막 증착을 통한 유연전도성 접합, 유연 전도성 접착제 기반 접합, 그리고 액체 금속 기반의 전도성 접합 형성 방법 등이 있으며 본 논문에서는 각 방법들의 기계적/전기적 특성 향상 전략과 그 쓰임을 소개한다.

• ETRI Journal
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• 제35권4호
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• pp.571-577
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• 2013

The fabrication of a thin-film transistor backplane and a liquid-crystal display using printing processes can eliminate the need for photolithography and offers the potential to reduce the manufacturing costs. In this study, we prepare contact via structures through a poly(methyl methacrylate) polymer insulator layer using inkjet printing. When droplets of silver ink composed of a polymer solvent are placed onto the polymer insulator and annealed at high temperatures, the silver ink penetrates the interior of the polymer and generates conducting paths between the top and bottom metal lines through the partial dissolution and swelling of the polymer. The electrical property of various contact via-hole interconnections is investigated using a semiconductor characterization system.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.377-377
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• 2012

Microprocessor technology now relies on copper for most of its electrical interconnections. Because of the high diffusivity of copper, Atomic layer deposition (ALD) $TaN_x$ is used as a diffusion barrier to prevent copper diffusion into the Si or $SiO_2$. Another problem with copper is that it has weak adhesion to most materials. Strong adhesion to copper is an essential characteristic for the new barrier layer because copper films prepared by electroplating peel off easily in the damascene process. Thus adhesion-enhancing layer of cobalt is placed between the $TaN_x$ and the copper. Because, cobalt has strong adhesion to the copper layer and possible seedless electro-plating of copper. Until now, metal film has generally been deposited by physical vapor deposition. However, one draw-back of this method is poor step coverage in applications of ultralarge-scale integration metallization technology. Metal organic chemical vapor deposition (MOCVD) is a good approach to address this problem. In addition, the MOCVD method has several advantages, such as conformal coverage, uniform deposition over large substrate areas and less substrate damage. For this reasons, cobalt films have been studied using MOCVD and various metal-organic precursors. In this study, we used $C_{12}H_{10}O_6(Co)_2$ (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) as a cobalt precursor because of its high vapor pressure and volatility, a liquid state and its excellent thermal stability under normal conditions. Furthermore, the cobalt film was also deposited at various $H_2/NH_3$ gas ratio(1, 1:1,2,6,8) producing pure cobalt thin films with excellent conformality. Compared to MOCVD cobalt using $H_2$ gas as a reactant, the cobalt thin film deposited by MOCVD using $H_2$ with $NH_3$ showed a low roughness, a low resistivity, and a low carbon impurity. It was found that Co/$TaN_x$ film can achieve a low resistivity of $90{\mu}{\Omega}-cm$, a low root-mean-square roughness of 0.97 nm at a growth temperature of $150^{\circ}C$ and a low carbon impurity of 4~6% carbon concentration.