• 제목/요약/키워드: Liquid Metal Flow

검색결과 151건 처리시간 0.032초

CAE을 이용한 주조방안설계 : 자동차용 부품(오일팬_BR2E) (Casting Layout Design Using CAE Simulation : Automotive Part(Oil Pan_BR2E))

  • 권홍규
    • 산업경영시스템학회지
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    • 제40권1호
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    • pp.35-40
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    • 2017
  • A most important progress in civilization was the introduction of mass production. One of main methods for mass production is die-casting molds. Due to the high velocity of the liquid metal, aluminum die-casting is so complex where flow momentum is critical matter in the mold filling process. Actually in complex parts, it is almost impossible to calculate the exact mold filling performance with using experimental knowledge. To manufacture the lightweight automobile bodies, aluminum die-castings play a definitive role in the automotive part industry. Due to this condition in the design procedure, the simulation is becoming more important. Simulation can make a casting system optimal and also elevate the casting quality with less experiment. The most advantage of using simulation programs is the time and cost saving of the casting layout design. For a die casting mold, generally, the casting layout design should be considered based on the relation among injection system, casting condition, gate system, and cooling system. Also, the extent or the location of product defects was differentiated according to the various relations of the above conditions. In this research, in order to optimize the casting layout design of an automotive Oil Pan_BR2E, Computer Aided Engineering (CAE) simulation was performed with three layout designs by using the simulation software (AnyCasting). The simulation results were analyzed and compared carefully in order to apply them into the production die-casting mold. During the filling process with three models, internal porosities caused by air entrapments were predicted and also compared with the modification of the gate system and overflows. With the solidification analysis, internal porosities occurring during the solidification process were predicted and also compared with the modified gate system.

Development and Evaluation of Impregnated Carbon Systems Against Iodine Vapours

  • Srivastava, Avanish Kumar;Saxena, Amit;Singh, Beer;Srivas, Suresh Kumar
    • Carbon letters
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    • 제8권4호
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    • pp.274-279
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    • 2007
  • In order to understand the breakthrough behaviour of iodine vapours on impregnated carbon systems, an active carbon, 80 CTC grade, $12{\times}30$ BSS particle size and $1104\;m^2/g$ surface area, was impregnated with metal salts such Cu, Cr, Ag, Mo and Zn, and an organic compound Triethylene diamine (TEDA) to prepare different carbon systems such as whetlerite, whetlerite/TEDA, whetlerite/KI/KOH and ASZMT. The prepared adsorbents along with active carbon were characterized for surface area and pore volume by $N_2$ adsorption at liquid nitrogen temperature. These carbon systems were compared for their CT (concentration X time) values at 12.73 to 53.05 cm/sec space velocities and 2 to 5 cm carbon column bed heights. The carbon column of 5.0 cm bed height and 1.0 cm diameter was found to be providing protection against iodine vapours up to 5.5 h at 3.712 mg/L iodine vapour concentration and 12.73 cm/sec space velocity. The study clearly indicated the adsorption capacities of carbon systems to be directly proportional to their surface area values. Dead layer with all the prepared carbon systems was found to be less than 2.0 cm indicating it to be minimum bed height to have protection against $I_2$ vapours. Effect of carbon bed height and flow rate was also studied. The active carbon showed maximum protection at all bed heights and flow rates in comparison to all other impregnated carbon systems, showing that only physical adsorption is responsible for the removal of iodine vapours.

동결농축법을 이용한 염수 및 중금속 수용액의 동결거동에 관한 실험 연구 (An Experimental Study on Freezing Behavior of NaCl and Heavy Metal Aqueous Solution Using Freeze Concentration Method)

  • 김정식;임승택;오철
    • 한국항해항만학회지
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    • 제37권2호
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    • pp.129-135
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    • 2013
  • 동결농축폐수처리의 기술은 열역학적 효율이 높고 에너지 소비량이 작아 중소규모로 적합하며, 용수 재활용과 융해열의 냉열 재이용이 가능한 장점을 가지고 있다. 본 연구에서는 폐수 처리효율이 높은 동결농축폐수처리장치의 개발을 위해 수직원관 형태의 제빙관을 대상으로 염화나트륨수용액을 이용한 기초 실험을 통해 냉각면 온도, 기포 분사 방법에 따른 분리 성능을 확인 후 대표적 중금속인 Pb, Cr 수용액을 대상으로 냉각면 온도, 기포 직접 분사, 과냉각을 방지하기 위한 용질을 포함하지 않은 초기 빙층 두께의 영향에 따른 중금속 분리 성능을 실험 통해 확인하였다. 실험결과 두 수용액에서 모두 냉각면의 온도가 낮을수록 동결층의 성장속도가 빨라지고 용질의 분리효율이 저하되었다. 기포를 분사하는 방법 중에는 환모양의 노즐을 통해 동결계면에 직접 분사하는 방법이 원통벽면을 통해 간접 분사하는 것 보다 분리효율이 높게 나타났으며, 초기 빙층의 두께에 따른 실험에서는 1mm 보다는 5mm의 두께에서 분리효율이 더 우수한 것으로 나타났다.

Fabrication of the catalyst free GaN nanorods on Si grown by MOCVD

  • Ko, Suk-Min;Cho, Yong-Hoon
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.232-232
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    • 2010
  • Recently light emitting diodes (LEDs) have been expected as the new generation light sources because of their advantages such as small size, long lifetime and energy-saving. GaN, as a wide band gap material, is widely used as a material of LEDs and GaN nanorods are the one of the most widely investigated nanostructure which has advantages for the light extraction of LEDs and increasing the active area by making the cylindrical core-shell structure. Lately GaN nanorods are fabricated by various techniques, such as selective area growth, vapor-liquid-solid (VLS) technique. But these techniques have some disadvantages. Selective area growth technique is too complicated and expensive to grow the rods. And in the case of VLS technique, GaN nanorods are not vertically aligned well and the metal catalyst may act as the impurity. So we just tried to grow the GaN nanorods on Si substrate without catalyst to get the vertically well aligned nanorods without impurity. First we deposited the AlN buffer layer on Si substrate which shows more vertical growth mode than sapphire substrate. After the buffer growth, we flew trimethylgallium (TMGa) as the III group source and ammonia as the V group source. And during the GaN growth, we kept the ammonia flow stable and periodically changed the flow rate of TMGa to change the growth mode of the nanorods. Finally, as the optimization, we changed the various growth conditions such as the growth temperature, the working pressure, V/III ratio and the doping level. And we are still in the process to reduce the diameter of the nanorods and to extend the length of the nanorods simultaneously. In this study, we focused on the shape changing of GaN nanorods with different growth conditions. So we confirmed the shape of the nanorods by scanning electron microscope (SEM) and carried out the Photoluminescence (PL) measurement and x-ray diffraction (XRD) to examine the crystal quality difference between samples. Detailed results will be discussed.

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반도체 및 전자패키지의 방열기술 동향 (Heat Dissipation Trends in Semiconductors and Electronic Packaging)

  • 문석환;최광성;엄용성;윤호경;주지호;최광문;신정호
    • 전자통신동향분석
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    • 제38권6호
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    • pp.41-51
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    • 2023
  • Heat dissipation technology for semiconductors and electronic packaging has a substantial impact on performance and lifespan, but efficient heat dissipation is currently facing limited improvement. Owing to the high integration density in electronic packaging, heat dissipation components must become thinner and increase their performance. Therefore, heat dissipation materials are being devised considering conductive heat transfer, carbon-based directional thermal conductivity improvements, functional heat dissipation composite materials with added fillers, and liquid-metal thermal interface materials. Additionally, in heat dissipation structure design, 3D printing-based complex heat dissipation fins, packages that expand the heat dissipation area, chip embedded structures that minimize contact thermal resistance, differential scanning calorimetry structures, and through-silicon-via technologies and their replacement technologies are being actively developed. Regarding dry cooling using single-phase and phase-change heat transfer, technologies for improving the vapor chamber performance and structural diversification are being investigated along with the miniaturization of heat pipes and high-performance capillary wicks. Meanwhile, in wet cooling with high heat flux, technologies for designing and manufacturing miniaturized flow paths, heat dissipating materials within flow paths, increasing heat dissipation area, and reducing pressure drops are being developed. We also analyze the development of direct cooling and immersion cooling technologies, which are gradually expanding to achieve near-junction cooling.

Study on Pressure-dependent Growth Rate of Catalyst-free and Mask-free Heteroepitaxial GaN Nano- and Micro-rods on Si (111) Substrates with the Various V/III Molar Ratios Grown by MOVPE

  • Ko, Suk-Min;Kim, Je-Hyung;Ko, Young-Ho;Chang, Yun-Hee;Kim, Yong-Hyun;Yoon, Jong-Moon;Lee, Jeong-Yong;Cho, Yong-Hoon
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.180-180
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    • 2012
  • Heteroepitaxial GaN nano- and micro-rods (NMRs) are one of the most promising structures for high performance optoelectronic devices such as light emitting diodes, lasers, solar cells integrated with Si-based electric circuits due to their low dislocation density and high surface to volume ratio. However, heteroepitaxial GaN NMRs growth using a metal-organic vapor phase epitaxy (MOVPE) machine is not easy due to their long surface diffusion length at high growth temperature of MOVPE above $1000^{\circ}C$. Recently some research groups reported the fabrication of the heteroepitaxial GaN NMRs by using MOVPE with vapor-liquid-solid (VLS) technique assisted by metal catalyst. However, in the case of the VLS technique, metal catalysts may act as impurities, and the GaN NMRs produced in this mathod have poor directionallity. We have successfully grown the vertically well aligned GaN NMRs on Si (111) substrate by means of self-catalystic growth methods with pulsed-flow injection of precursors. To grow the GaN NMRs with high aspect ratio, we veried the growth conditions such as the growth temperature, reactor pressure, and V/III molar ratio. We confirmed that the surface morphology of GaN was strongly influenced by the surface diffusion of Ga and N adatoms related to the surrounding environment during growth, and we carried out theoretical studies about the relation between the reactor pressure and the growth rate of GaN NMRs. From these results, we successfully explained the growth mechanism of catalyst-free and mask-free heteroepitaxial GaN NMRs on Si (111) substrates. Detailed experimental results will be discussed.

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대기입자의 원소성분 배출특성연구를 위한 반-연속식 입자채취시스템 적용 (Application of Semi-continuous Ambient Aerosol Collection System for Elemental Analysis)

  • 박승식;고재민;이동수
    • 한국대기환경학회지
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    • 제28권1호
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    • pp.39-51
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    • 2012
  • Aerosol slurry samples were collected in 60-min interval using Korean Semi-continuous Elements in Aerosol Sampler (KSEAS) between May 19 and June 6, 2010 at an urban site of Gwangju. The $PM_{2.5}$ samples were collected with a flow rate of 16.7 L/min and particles are grown by condensation of water vapor in a condenser maintained at ${\sim}5^{\circ}C$ after saturation by direct injection of steam. The resulting droplets are collected in a liquid slurry with a airdroplet separator. Concentrations of 16 elements (Al, Fe, Mn, Ca, K, Cu, Zn, Pb, Cd, Cr, Ti, V, Ni, Co, As, Se) in the collected slurry samples were determined off-line by ICP-MS. KSEAS sample analysis encompassed the sampling periods for which 24-hr average elemental species concentrations were calculated for comparison with those derived from 24-hr integrated filter samples. Relationship between elemental species measured by two methods indicated high correlation coefficients (r), mostly greater than r of 0.80. However, we note that concentrations of Al, K, Ca, Mn, and Fe, which are often associated with crustal elemental particles, in the KSEAS samples, were substantially lower (1.4~11 times) than those found in the typical filter-based samples. This discrepancy is probably due to difficulties in transferring insoluble dust particles to the collection vials in the KSEAS. Temporal profiles of elemental concentrations indicate that some transient events in their concentrations are observed over the sampling periods. For the elemental species studied, atmospheric concentrations during the transient events increased by factors of 4 in Mn~80 in Zn, compared to their background levels. Principle component analyses were applied to the hourly KSEAS data sets to identify sources affecting the concentrations of the metal constituents observed. In this study, we conclude that hourly measurements for particle-bound elemental constituents were extremely useful for revealing the short-term variability in their concentrations and developing insights into their sources.

음극지지형 단전지를 사용한 소형 SOFC 스택의 제조 및 출력특성 (Fabrication of Small SOFC Stack Based on Anode-Supported Unit Cells and Its Power Generating Characteristics)

  • 정화영;김우식;최선희;김주선;이해원;고행진;이기춘;이종호
    • 한국세라믹학회지
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    • 제41권10호
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    • pp.777-782
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    • 2004
  • 액상응결 공정법과 일축가압성형법으로 제조된 기판위에 전해질과 양극층을 스크린 인쇄법으로 구성한 후 열처리함으로써 최종크기가 $5\times5cm^2$인 SOFC 단전지를 제조하였다. 본 연구에서는 이들 단전지와 인코넬 합금으로 제조된 접속자 그리고 가스켓형의 밀봉재를 이용하여 스택을 구성하였다. 본 연구에 사용된 스택은 연료가스와 산화가스가 교차되는 형태의 가스채널을 가지며 가스매니폴드가 내부에 구성되어 있는 형태로 설계되었다. 제작된 3단 스택의 성능을 평가해 본격과 15W 정도의 최고출력을 나타내었는데 이는 단전지 출력성능으로부터 예측된 최고출력치의 $50\%$ 정도에 해당되는 출력이었다. 본 연구에서는 이러한 스택성능에 영향을 주는 조정인자들과 스택디자인 인자들에 대한 분석을 수행하였다.

오염원에 따른 오염지역 물성 변화 및 물리탐사 적용 사례 소개 (Change in Physical Properties depending on Contaminants and Introduction to Case Studies of Geophysical Surveys Applied to Contaminant Detection)

  • 유희은;김빛나래;송서영;조성오;;남명진
    • 지구물리와물리탐사
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    • 제22권3호
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    • pp.132-148
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    • 2019
  • 최근 안전 및 환경 등이 사회의 주요 이슈가 되고 있다. 특히 공사 현장 주변의 지반 침하 등에 따른 피해를 막기 위해 지하안전특별법까지 제정되는 등 안전에 대해서는 구체적인 노력이 진행되어 왔다. 환경 오염문제와 관련해서도 대상 지역의 지중유체 이동경로 파악 등을 통해 가능한 환경 오염 영역을 특성화 하고 지중에서 오염의 처리 및 모니터링에 대한 연구가 진행되고 있다. 이러한 연구의 일환으로, 기존에는 주로 자원 탐사, 지질 특성 파악, 지반 탐사 등에 이용되었던 물리탐사 기법이 환경 오염 영역 파악에 적용되고 있다. 이 논문에서는 환경 오염 지역 특성화를 위한 물리탐사 연구의 기초 연구로서, 유류, 침출수, 중금속 및 질소산화물 등 여러 오염원의 특성에 따른 오염지역의 전기적 물성 변화 특성을 알아보았다. 또한 이러한 물성 변화를 파악할 수 있는 물리탐사 기법들 즉, 전기비저항 탐사, 유도분극 탐사, 지표투과레이더 탐사 등의 오염 탐사 적용 가능성에 대해 검토한 후, 다양한 오염지역에서의 실제 수행된 물리탐사 사례들을 분석하였다.

포도와 포도 가공품에 함유되어 있는 trans-resveratrol의 함량 분석 (Analysis of trans-Resveratrol Contents of Grape and Grape Products Consumed in Korea)

  • 김대중;김상균;김명희;이희봉;이준수
    • 한국식품과학회지
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    • 제35권5호
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    • pp.764-768
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    • 2003
  • 본 연구는 생물학적, 비생물학적인 스트레스에 대한 방어물질중의 한가지인 trans-resveratrol를 포도와 포도가공품(포도주, 포도쥬스)으로부터 분석하는 방법을 확립하였다. trans-Resveratrol 기기분석 조건은 다음과 같다. 분석 column은 Nucleosil 100-5 C18을 사용하였으며 이동상은 acetonitrile: water(40:60, v/v)로서 UV검출기(306 nm)를 이용하여 0.3 mL/min의 유속으로 측정하였다. 분석한 결과, 재현성과 반복성의 CV%는 10%이하였으며, 회수율은 $90{\sim}110%$이었다. 또한, 포도, 포도주 그리고 포도쥬스의 최소검출한계는 14.5 ng/g, 3.62 ng/mL 그리고 4.02 ng/mL이고, 최소정량한계는 14.8 ng/g, 3.69 ng/mL 그리고 4.10 ng/mL이었다. 표준물질인 trans-resveratrol 농도가 $0.048{\sim}2.4\;{\mu}g/mL$일때 $R^2$ 값은 0.999이었다. 32품종의 포도, 9종류의 포도주 그리고 9종류의 포도쥬스 내의 trans-resveratrol 함량은 각각 $0.76{\sim}207.14\;{\mu}g/100\;g$, $5.41{\sim}275.66\;{\mu}g/L$ 그리고 $63.25{\sim}751.55\;{\mu}g/L$로 분석되었다.