• 제목/요약/키워드: Light-emitting diode(LEDs)

검색결과 221건 처리시간 0.03초

유기발광 소자의 수송층 두께 변화에 따른 발광효율 연구 (Study of OLED luminescence efficiency by Hole Transport layer change)

  • 이정호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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    • pp.1002-1006
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    • 2004
  • The studies on OLED(Organic Light-Emitting Diode) materials and structures have been researched in other to improve luminescence efficiency of OLED. Electrons and holes are injected into the devices, transported across the layer and recombine to form excitons, their profiles are sensitive to mobility velocity of electrons and holes. A suggested means of improving the efficiency of LEDs would be to balance the injection of electrons and holes into light emission layer of the device. In this paper, we demonstrate the difference of velocity between hole and electron by experiments, and compare with a data of simulation and experiment changing hole carrier transport layer thickness, so we get the optimal we improve luminescence efficiency. We improve understanding of the various luminescence efficiency through experiments and numerical analysis of luminescence efficiency in the hole carrier transport layer's thicknes.

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Variable-color Light-emitting Diodes Using GaN Microdonut Arrays

  • Tchoe, Youngbin;Jo, Janghyun;Kim, Miyoung;Heo, Jaehyuk;Yoo, Geonwook;Sone, Cheolsoo;Yi, Gyu-Chul
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.280-280
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    • 2014
  • We report the fabrication and electroluminescent characteristics of GaN/InxGa1-xN microdonut-shaped light-emitting diode (LED) microarrays as variable-color emitters. The diameter, width, height, and period of the GaN microdonuts were controlled by their growth parameters and the geometrical factors of the growth mask patterns. For the fabrication of microdonut LEDs, p-GaN/p-AlxGa1-xN/u-GaN/u-InxGa1-xN heteroepitaxial layers were coated on the entire surface of n-GaN microdonuts. The microdonut LED arrays showed strong light emission, which could be seen with the unaided eye under normal room illumination. Additionally, magnified optical images of microdonut LED arrays exhibited microdonut-shaped light emissions having spatially resolved blue and green colors. Their electroluminescence spectra had two dominant peaks at 460 and 560 nm. With increasing applied voltage, the intensity of the blue emission peak increased much faster than that of the green emission peak, indicating that the color of the LEDs is tunable. We also demonstrated that EL spectra of the devices could be controlled by changing the size of microdonut LEDs. What we want to emphasize here with the microdonut LEDs is that they have additional inner sidewall facets which did not exist for other typical three-dimensional structures including nanopyramids and nanorods, and that InxGa1-xN single quantum well formed on the inner sidewall facets had unique thickness and chemical composition, which generated additional EL color. The origin of the electroluminescence peaks was investigated by structural characterizations and chemical analyses.

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부착조류 파판배양 시 Light Emitting Diodes (LEDs)의 적용 (Adaptation of light emitting diode (LED) at culture on attachment plate of diatom)

  • 배재현;안희춘;김미경;박진철;박흠기;권오남
    • 수산해양기술연구
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    • 제50권4호
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    • pp.542-550
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    • 2014
  • We investigated biomass, diatom species and fucoxanthin contents as cell growth, fatty acid and amino acid contents as nutritional composition of diatoms attached on plate to confirm effects of light emitting diodes (LEDs) due to block off natural light. In the single LED irradiation, biomass showed significantly higher to $30.0{\pm}6.48mg/m^2$ in white LED than that of others (P<0.05). The dominate diatom species was Navicula cancellata. Their lipid contents showed significantly higher to $112.9{\pm}19.23ug/mg$ dry matter (DM) in control than that of others LEDs. But eicosapetaenoic acid (EPA) contents showed significantly higher to $3.3{\pm}0.62ug/mg$ DM than others, but not significantly differed with natural control light treatment (P<0.05). And total protein contents are higher in control and blue LED light than that of others, but essential amino acid contents showed significantly higher to $3.2{\pm}4.8%$ in control (P<0.05). In mixing light with natural and LED light, biomass showed $2.6{\pm}0.22mg/m^2$ in blue LED (P<0.05). Fatty acids contents were not significantly differed with all treatments. Amino acid contents showed to $11.0{\pm}0.33ug/mg$ DM in white LED (P<0.05), but not significantly differed with others LED lights (P>0.05). Therefore, we could suggest that irradiation of blue LED in natural light very benefit to diatom culture for larvae of sea cucumber and abalone and do on.

쏙(Upogebia major)의 광반응 분석시스템 구축과 발광다이오드(Light-Emitting Diode) 파장별 행동분석 (Behavioral Monitoring System for Mud Shrimp Upogebia major and the Photoresponse to Illumination with Different Wavelength LEDs)

  • 장준철;정종균;허윤성;송재희;김종명
    • 한국수산과학회지
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    • 제50권4호
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    • pp.413-420
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    • 2017
  • The increase in the number of mud shrimps Upogebia major is a concern because of their negative effects on shellfish aquaculture, including Manila clam Venerupis philippinatum along the west coast of Korea. This study developed a behavioral analysis system for aquatic animals using a set of monochromatic light-emitting diode (LED) modules covering the visible light range at similar intervals. Movements of mud shrimp were monitored using a tracking system under illumination with infra-red light and an LED of 660 nm wavelength without provoking stimulation. The minimum light intensity needed to induce a photoresponse by the mud shrimp was $10{\mu}mole/m^2/s$ under the conditions tested. Of the six kinds of LED illuminations tested, the most sensitive response was obtained with illumination with the 505 nm LED, followed in order by LEDs with peak wavelengths of $525nm{\fallingdotseq}465nm$ > $405nm{\fallingdotseq}590nm$ > 660 nm. These findings should help to identify LED sources that efficiently induce movement of the mud shrimp and also for monitoring movement without stimulating.

상온 강자성 (Ga,Mn)N 박막을 이용한 질화물계 스핀 발광소자의 스핀편극된 빛의 발광 (Emission of Spin-polarized Light in Nitride-based Spin LEDs with Room-temperature Ferromagnetic (Ga,Mn)N Layer)

  • 함문호;명재민
    • 한국전기전자재료학회논문지
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    • 제18권11호
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    • pp.1056-1060
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    • 2005
  • We investigated the fabrication and characteristics of the nitride-based spin-polarized LEDs with room-temperature ferromagnetic (Ga,Mn)N layer as a spin injection source. The (Ga,Mn)N thin films having room-temperature ferromagnetic ordering were found to exhibit the negative MR and anomalous Hall resistance up to room temperature, revealing the existence of spin-polarized electrons in (Ga,Mn)N films at room temperature. The electrical characteristics in the spin LEDs did not degraded in spite of the insertion of the (Ga,Mn)N layer into the LED structure. In EL spectra of the spin LEDs, it is confirmed that the devices produce intense EL emission at 7 K as well as room temperature. These results are expected to open up new opportunities to realize room-temperature operating semiconductor spintronic devices.

RGB형 LED Backlight의 전류 및 온도 변화에 따른 특성 분석 (Characteristic Analysis of RGB-LED Backlight for Current and Temperature Variations)

  • 임수현;임정규;신휘범;정세교;신민재;손승걸
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2007년도 하계학술대회 논문집
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    • pp.244-246
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    • 2007
  • The LCD backlight technique using light-emitting diode(LED) has been studied in the recent backlight market. The white light is need for LCD backlight and it is generally implemented by combining the RGB-LEDs to obtain the high brightness. However, RGB-LEDs have different color characteristics for the current and temperature variations, which results in the color shift problem. The color shift characteristics of RGB-LEDs for the current and temperature variations are investigated in this paper. This result can be used to control the color of backlight system using RGB-LEDs.

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Light Enhancement Al2O3 Passivation in InGaN/GaN based Blue Light-emitting Diode Lamps

  • So Soon-Jin;Kim Kyeong-Min;Park Choon-Bae
    • 한국전기전자재료학회논문지
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    • 제19권8호
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    • pp.775-779
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    • 2006
  • In this study, sputtered $Al_2O_3$ thin films were evaluated as a passivation layer in the process of InGaN-based blue LEDs in order to improve the brightness of LED lamps. In terms of packaged LED lamps, lamps with $Al_2O_3$ passivation layer emanated higher brightness than those with $SiO_2$ passivation layer, and LED lamps with 90 nm $Al_2O_3$ passivation layer were the brightest among four kinds of lamps. Although lamps with $Al_2O_3$ passivation had a slight increase in operating voltage, their brightness was improved about 13.6 % compare to the lamps made of conventional LEDs without the changes of emitting wavelength.

Applications of Nanowire Transistors for Driving Nanowire LEDs

  • Hamedi-Hagh, Sotoudeh;Park, Dae-Hee
    • Transactions on Electrical and Electronic Materials
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    • 제13권2호
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    • pp.73-77
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    • 2012
  • Operation of liquid crystal displays (LCDs) can be improved by monolithic integration of the pixel transistors with light emitting diodes (LEDs) on a single substrate. Conventional LCDs make use of filters to control the backlighting which reduces the overall efficiency. These LCDs also utilize LEDs in series which impose failure and they require high voltage for operation with a power factor correction. The screen of small hand-held devices can operate from moderate brightness. Therefore, III-V nanowires that are grown along with transistors over Silicon substrates can be utilized. Control of nanowire LEDs with nanowire transistors will significantly lower the cost, increase the efficiency, improve the manufacturing yield and simplify the structure of the small displays that are used in portable devices. The steps to grow nanowires on Silicon substrates are described. The vertical n-type and p-type nanowire transistors with surrounding gate structures are characterized. While biased at 0.5 V, nanowire transistors with minimum radius or channel width have an OFF current which is less than 1pA, an ON current more than 1 ${\mu}A$, a total delay less than 10 ps and a transconductance gain of more than 10 ${\mu}A/V$. The low power and fast switching characteristics of the nanowire transistor make them an ideal choice for the realization of future displays of portable devices with long battery lifetime.

양자점 부품과 이를 활용한 고연색성 조명 연구 (Study on Quantum Dot Components and Their Use in High Color Rendering Lighting)

  • 고재현
    • 한국광학회지
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    • 제35권3호
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    • pp.95-106
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    • 2024
  • 일반 백색 LED의 연색성을 보완하기 위해 적색 양자점을 선택적으로 활용함으로써 고연색성 조명을 구현하는 연구가 최근 활발하다. 본 논문에서는 최근 이루어지고 있는 원격 양자점 부품 연구 및 이를 활용한 고연색성 조명 개발의 현황에 대해 소개한다. 특히 양자점 부품이 배치되는 조명의 광구조 최적화에 있어서 중요하게 고려해야 할 다양한 요소를 집중적으로 논의함으로써 향후 고연색성 조명 연구의 방향 및 전망까지 다루고자 했다.

Via-hole 구조의 n-접합을 갖는 수직형 발광 다이오드 전극 설계에 관한 연구 (Study on the Electrode Design for an Advanced Structure of Vertical LED)

  • 박준범;박형조;정탁;강성주;하준석;임시종
    • 마이크로전자및패키징학회지
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    • 제22권4호
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    • pp.71-76
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    • 2015
  • 최근 Light Emitting Diode (LED)의 효율을 높이기 위한 연구가 활발히 진행 되고 있다. 특히 소자 측면에서는 수평형 LED, 수직형 LED, via-hole 구조의 수직형 LED 등의 다양한 구조가 제시되었다. 본 논문에서는 시뮬레이션을 통해 via-hole 구조의 수직형 LED의 새로운 전극 디자인을 제시하였다. 기존 Via-hole 구조의 수직형 LED의 n-contact hole 주변에 전류가 밀집되는 문제점을 해결하면서 유효 발광면적을 극대화 시켜 소자 전체에 균일한 전류를 주입할 수 있는 소자 디자인에 대해 평가하였다. 시뮬레이션 결과를 바탕으로 최적의 전극 디자인을 실제 디바이스로 제작하여 기존의 via-hole 구조의 수직형 LED와 비교 분석하였다. 최적화된 디자인이 적용된 via hole type 수직형 LED의 경우 기존 디자인에 비해 350 mA 주입시 약 0.2 V의 Forward Voltage 감소하였지만 광 출력은 비슷하여 최종적으로 4.2%의 WPE (Wall plug efficiency)가 향상됨을 보였다.