• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.224-224
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• 2016

Many researchers have been tried to improve the performance of the phosphorescent organic light-emitting diode(PHOLED) by controlling of the dopant profile in the emission layer. In this work, as shown in Fig. 1 insert, a typical red PHOLED device which has the structure of ITO/NPB(50nm)/CBP(30nm)/TPBi(10nm)/Alq3(20nm)/LiF(0.8nm)/Al(100nm) is fabricated with a 5nm thick doping section in the emission layer. The doping section is formed by co-deposition of CBP and Ir(btp)2acac with a doping concentration of 8%, and it's location(x) is changed from HTL/EML interface to EML/HBL in 5nm steps. The current efficiency versus current density of the devices are shown in Fig. 1. By changing the location of doping section, as shown in Fig. 1 and 2, at x=5nm, the efficiency shows the maximum of 3.1 cd/A at 0.5 mA/cm2 and it is slightly decreased when the section is closed to HTL and slightly increased when the section is closed to HBL. If the doping section is closed to HTL(NPB) the excitons can be quenched easily to NPB's triplet state energy level(2.5eV) which is relatively lower than that of CBP(2.6eV). Because there is a hole accumulation at EML/HBL interface the efficiency can be increased slightly when the section is closed to HBL. Even the thickness of the doping section is only 5nm,. the maximum efficiency of 3.1 cd/A with x=5 is closed to that of the homogeneously doped device, 3.3 cd/A, because the diffusion length of the excitons is relatively long. As a result, we confirm that the current efficiency of the PHOLED can be improved by the doping profile optimization such as partially, not homogeneously, doped EML structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.330-330
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• 2009

For the high-performance Quantum dots-Light Emitting Diodes in the near-infrared and visible spectrum, adequate electro- and hole-transporting layers are required. The operation lifetimes of typical materials used in OLEDs are very limited and degraded especially by the oxygen and humid atmosphere. In this work, NiO was selected as a possible hole-transporting layer replacing the TPD film used in QD-LEDs. About 40-nm-thick NiO films have been deposited by the rf-sputtering method on various technical substrates such as FTO/glass, ITO/glass, and ITO/PEN. For the balance of charge carriers and quenching consideration, the resistivity of the deposited NiO films was investigated controlling the oxygen in the sputtering gas. NiO films were fabricated at room temperature and about 6mTorr using pure Ar, 2.5%-, 5%-, and 10%-mixed $O_2$ in Ar respectively. We also investigated the rf-power dependence on NiO films in the range of 80 ~ 200 Watts. The resistivity of the samples was varied from highly conductive to resistive state. Also discussed are the surface roughness of NiO films to provide the smooth surface for the deposition of QDs.

• Journal of the Korean Ceramic Society
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• v.43 no.3 s.286
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• pp.169-172
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• 2006

We have synthesized a $Eu^{2+}-activated\;{(Sr,Ba)}_2SiO_4$ yellow phosphor and investigated the development of blue LEDs by combining the phosphor with a InGaN blue LED chip (${\lambda}_{em}$=405 nm). The InGaN-based ${(Sr,Ba)}_2SiO_{4}:Eu$ LED lamp shows two bands at 405 nm and 550 nm. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This 405 nm emission was used as an optical transition of the ${(Sr,Ba)}_2SiO_{4}:Eu$ phosphor. The 550 nm emission band is ascribed to a radiative recombination of $Eu^{2+}$ impurity ions in the ${(Sr,Ba)}_2SiO_4$ host matrix. In the preparation of UV Yellow LED Lamp with ${(Sr,Ba)}_2SiO_{4}:Eu$ yellow phosphor, the highest luminescence efficiency was obtained at the epoxy-to-yellow phosphor ratio of 1:0.45. At this ratio, the CIE chromaticity was x=0.4097 and y=0.5488.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.189-192
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• 2004

To improvement life-time of the organic light emitting diodes(OLEDs). We investigate the inorganic composite film based on MgO and $SiO_2$ to protect from the moisture and oxygen. The inorganic composite films are added the base materials to the co-operate materials using the mixed process and it is deposited on plastic substrate by e-beam evaporator. In order to analyze as kinds of inorganic materials, Water Vapor method of Transmission Rate (WVTR) and Oxygen Transmission Rate (OTR) are measured by Permatran equipment(MOCON Corp.). For comparison. an MgD- and $SiO_2$-based composite film has lower values of WVTR and OTR than inorganic composite/compound films of ones. The results obtained here shows that this film is suitable for passivation layer to extend the life-time of OLEDs.

• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.384-389
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• 2009

ZnO, a wurtzite lattice structure, has attracted much attention as a promising material for light-emitting diodes (LEDs) due to highly efficient UV emission resulting from its large band gap of 3.37 eV, large exciton binding energy of 60 meV, and low power threshold for optical pumping at room temperature. For the realization of LEDs, both n-type ZnO and p-type ZnO are required. Now, n-type ZnO for practical applications is available; however, p-type ZnO still has many drawbacks. In this study, ZnO films were grown on glass substrates by using atomic layer deposition (ALD) and the ZnO films were irradiated by nitrogen ion beams (20 keV, $10^{13}{\sim}10^{15}ions/cm^2$). The effects of nitrogen-beam irradiation on the ZnO structure as well as the electrical property were investigated by using fieldemission scanning electron microscopy (FESEM) and Hall-effect measurement.

• Korean Journal of Environment and Ecology
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• v.29 no.4
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• pp.564-569
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• 2015

In order to discover materials that can be used for OLED, extractions of marine microalgae was screened for photoluminescence(PL) properties and analyzed using gas chromatography-mass spectrometry(GC-MS). The extractions of Nitzschia denticula, Navicula cancellata and Nannochloropsis salina showed PL spectroscopy among fourteen marine microalgae species. The selected three fractions from three microalgae were analyzed by GC-MS. According to the results, it was found that the identified organic light-emitting materials can be subdivided into three functional groups based on imidazole, purine and quinoline. These chemicals are considered to have a strong relationship with PL spectroscopy for OLED materials.

• Korean Journal of Crystallography
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• v.1 no.1
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• pp.19-28
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• 1990

6H-SiC is a promising material (Eg=3.0eV) for blue light-emitting doide and high-temperature semiconducting device. In the experiment, single crystals of a-SiC have been grown by the sublimation method to fabricate blue light~emitting diode. During the growth of a-SiC single crystals, a temperature Vadient, yonh temperature and pressure ranges were kept 44℃/cm , 1800-1990℃ and 50-1000 mTorr, respectively. Single crystals obtained in Acheson furnace were used as seed crystals. Polarizing microscopy and back-reflection X-ray Laue diffraction showed that the a-SiC crystal was epitaxially and on the seed crytal. It was found by XRD analysis that when other growth conditions were the same, a-SiC was grown at the temperature above 1840℃ and 3C-SiC was gown at lower temperature or under low supersaturation of vapor. The carrier type. concentration and mobility were measured be hole(p-type), 7.6x1014cm-3 and 19cm2V-1sec-1, respectively, by van der Pauw method.

• Journal of the Semiconductor & Display Technology
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• v.11 no.3
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• pp.33-37
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• 2012

Simple and high efficiency blue organic light-emitting diodes with three organic layers of N, N'-diphenyl-N,N'-bis-[4-(phenyl-m-tolylamino)-phenyl]-biphenyl-4,4'-diamine[DNTPD]/1,1-bis-(di-4-polya-minophenyl)cyclohexane[TAPC]/electron transport material [ET-137] were fabricated and their electroluminescent characteristics were evaluated according to the TAPC thickness variation in a range of $50{\sim}300{\AA}$. Electroluminescence spectra of the devices with structure of DNTPD/TAPC/ET-137 showed all the same central emission wavelengths of 455 nm under an applied voltage of 7V, which were similar with that of the device with ET-137 only. On the other hand, the electroluminescence spectra of the device with structure of DNTPD/ET-137 without TAPC layer showed double emission peaks at the wavelengths of 455 nm and 561 nm under an applied voltage of 7V. In the devices with structure of DNTPD/TAPC/ET-137, single peak blue emission was not maintained in the device with $50{\AA}$-thick TAPC above 8V by the formation of exciplex. In the device with $300{\AA}$-thick TAPC, however, single peak blue emission was maintained until 10 V. According to the thickness increase of TAPC in the fabricated devices, the current density and luminance decreased, but the luminous efficiency and roll-off characteristics were improved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.10
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• pp.817-821
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• 2011

We have proposed an optical thin film and micro lens to improve the luminance of organic light emitting device. The first method, optical thin film was calculated refractive index of dielectric layer material that was modulated refractive index of organic material, ITO (indium tin oxide)and glass. The second method, microlens was applied with lenses on the organic device. Optical thin films were designed with Macleod Simulator and Micro Lenses were calculated by FDTD (finite-difference time-domain) solution. The structure of thin film was designed in organic material/ITO/dielectric layer/glass. The lenses size, height and distance were 5 ${\mu}m$, 1 ${\mu}m$, 1 ${\mu}m$, respectively. The material of micro lenses used silicon dioxide. Result, The highest luminance of OLED which applied with microlens was 11,185 $cd/m^2$, when approval voltage was 14.5 V, applied thin film was 5,857 $cd/m^2$. The device efficiency applying microlens increased 3 times than the device which does not apply microlens.

• Korean Journal of Plant Resources
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• v.32 no.3
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• pp.228-236
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• 2019

This study is conducted to investigate the effects of growth characteristics (GC) and DPPH radical scavenging activity (DRSA) of the heading lettuce 'Fidel' depending on four concentrations of activated mineral groups (AMG: 1.6% active minerals and 0.03% CaO) added to basic nutrient solutions (diluted by 0, 0.05, 0.1, and 0.2%) and on four different light-emitting diodes (LED; B:R:W ratio = 0:1:12, 0:1:9, 0:5:5, and 2:3:5). Both 0.1 and 0.2% AMG showed better GC of lettuce in plant width, plant length, leaf width, leaf length, and the number of leaves than those of other AMG, while leaf thickness and chlorophyll value did not show significant difference among all AMG. Moreover, 0.1 and 0.2% AMG showed heavier shoot fresh weights than those of other AMG. As for the combinations of AMG and LED, B0:R5:W5 showed the best lettuce GC regardless of AMG compared to other AMG and LED combinations. As shown in the above results of LED, although there was a difference in lettuce growth by LED, the differences of lettuce growth by AMG were statistically significant. The DRSA was the highest at 82.8% in B2:R3:W5, followed by B0:R5:W5 at 77.8%. LED showed differences but AMG did not affect DRSA. Therefore, the optimal conditions in plant factory for GC and DRSA of the lettuce were 0.1% AMG and B0:R5:W5.