• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.316-319
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• 2001

Organic light emitting diodes(OLEDs) with a hole injection layer inserted between Indium-Tin-Oxide(ITO) anode and hole transport layer were fabricated. The effect of plasma treatment on the surface properties of Indium-Tin-Oxide(ITO) anode were studied. The electrical and optical characteristics of the fabricated organic light emitting diodes(OLEDs) were also studied. The diode including of plasma treated ITO substrate and the hole injection layer, which showed the luminance of 5280 $cd/m^{2}$ at 8 V

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.316-319
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• 2001

Organic light emitting diodes(OLEDs) with a hole injection layer inserted between Indium-Tin-Oxide(ITO) anode and hole transport layer were fabricated. The effect of plasma treatment on the surface properties of Indium-Tin-Oxide(ITO) anode were studied. The electrical and optical characteristics of the fabricated organic light emitting diodes(OLEDs) were also studied. The diode including of plasma treated ITO substrate and the hole injection layer, which showed the luminance of 5280 cd/㎡ at 8 V

• Biomedical Science Letters
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• v.14 no.2
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• pp.91-96
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• 2008

Light Emitting Diode (LED) of 880 nm was used as a function of luminosity in culture of the photosynthetic bacteria including Rhodobacter sp.. An array of 880 run LED was driven with an energy density of $6.0mW/cm^2$. In processing time, we were able to show that the cell growth were gained of significant changes in the pigment and in the dry weight. And we also showed that photosynthetic bacteria had the resonable relativity of optical density to dry weight. LED-880nm is of great significance for the potential use of photo-bioreactor construction.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.18 no.4
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• pp.15-21
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• 2004

The optical characteristics; luminous flux, correlated color temperature, and CIE -chromaticity coordinate etc., of HB LED(high brightness light emitting diode) of yellow/green/white SMD(surface mounted device) type were tested with integrating sphere photometer and monochromator, and the results were comparatively evaluated And, for the white LED, color rendering indices were considered to analyze.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.257-260
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• 2002

This paper describes the pixel of AMOLED(act ive matrix organic light emitting diode) driving circuit by poly-sl technology. The area per pixel is 278um$\times$278um in 120$\times$160(2.2 inch) Driving the OLEDS with active matrix leads to the lower voltage operation, the lower peak pixel currents and the display with much greater efficiency and brightness The role of the active matrix is to provide a constant current throughout the entire frame time and is eliminating the high currents encountered In the passive matrix approach, This design can support the high resolutions expected by the consumer because the current variation specification is norestricted. The pixel has been designed driving TFT threshold voltage cancellation circuit and wide aperture ratio circuit that communizes 4 pixel. The test simulation results and layout are 11% per threshold-current var Eat ion and 12.5% the aperture ratio of increase.

• Journal of Power Electronics
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• v.16 no.2
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• pp.815-822
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• 2016

The efficiency of light-emitting diode (LED) devices is a significant factor that reflects the capability of these devices to convert electrical power into optical power. In this study, a method for estimating the efficiency of LED devices is proposed. An efficiency model and a heat power model are established as convenient tools for LED performance evaluation. Such models can aid in the design of LED drivers and in the reliability evaluation of LED devices. The proposed estimation method for the efficiency and heat power of LED devices is verified by experimentally testing two types of commercial LED devices.

• ETRI Journal
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• v.26 no.5
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• pp.509-511
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• 2004

This paper describes a novel current driving circuit for an active matrix organic light emitting diode (AMOLED). The proposed current driving circuit has a lower power consumption and higher chip density for the AMOLED display compared with the conventional one because all elements operate at a normal voltage and are shielded from the high voltage of the panel. The chip size and power consumption of the current driving circuit for an AMOLED can be improved by about 30 to 40% and 10 to 20%, respectively, compared with the conventional one.

• Journal of Electrical Engineering and Technology
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• v.3 no.2
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• pp.276-279
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• 2008

We report on the enhancement of cathode-luminescence in an $In_xGa_{1-x}N/In_yGa_{1-y}$ green light emitting diode structure using two-dimensional photonic crystals. The square lattice arrays of photonic crystals with diameter/periodicity of 200/500 nm were fabricated by electron beam lithography. Inductively coupled plasma dry etching was used to etch and define photonic crystals. Three samples with different etch depths, i.e., 170, 95, and 65 nm, were constructed. Field emission scanning electron microscope analysis shows that air holes of photonic crystal structure with inverted-cone shapes were fabricated after dry etching. Cathode-luminescence measurement indicated that up to 30-fold enhancement of cathode-luminescence intensity has been achieved.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1461-1463
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• 2007

In this study, we report the luminescent properties of white polymer light emitting diode (WPLED) fabricated by soluble methods with poly-fluorenebased polymers blends which emit blue and yellow light. A device structure of ITO/PEDOT:PSS/Emissive Layer (EML)/Al was employed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.53-56
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• 2002

The effect of $\alpha$-septithiophene (${\alpha}-7T$) layers on the organic light emitting diode(OLED) was studied. The ${\alpha}-7T$ was used for a buffer layer in OLED. Hole injection was investigated and improved emission efficiency. The OLEDs structure can be described as indium tin oxide(ITO)/ buffer layer / hole transporting layer / emitting layer / electron transporting layer / LiF / Al. The hole transporting layer were composed of N,N-diphenyl-N,N-di(3-methylphenyl)-1,1-biphenyl-4,4-diamine(TPD), and N,N-di(naphthalene-1-ly)-N,N-diphenyl-benzidine( ${\alpha}$-NPD). The emitting layer, and electron transporting layer consist of tris(8-hydroxyquinolinato) aluminum($Alq_3$). All organic layer were deposited at a background pressure of less than $10^{-6}$ torr using ultra high vacuum (UHV) system. The ${\alpha}-7T$ layer can substitute the hole blocking layer, and improve hole injection properties.