• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.4
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• pp.762-767
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• 2010

This paper describes characteristic of a light triggered thyristor investigated by experiment to adopt it into a main switch of a pulsed power unit. Triggering principle of the light triggered thyristor are referred with its structure and equivalent circuit. Operational principle and simulation result of a capacitive pulsed power circuit are explained. A variety of triggering conditions of triggering circuit and characteristics on turn-on, turn-off, voltage dividing in series operation, overvoltage protection function of the light triggered thyristor are investigated by experiments. Experimental result of 40 kJ pulsed power unit using the light triggered thyristor is presented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.397-400
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• 2004

The design concept for 8kV light triggering thyristor(LTT) with integrated BOD was discussed here in detail. The trade-off between light triggering input source againsthigh dV/dt limitation has been treated via grooved P-base for gate design. The main application point used for high voltage DC transmission(HVDC) was represented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.300-303
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• 2003

The design rule for 8.5kV LTT was discussed here. An inherent integrated breakover diode (BOD) for self -protection function and multi-amplified gate (AG) for improved di/dt capability of LTT was introduced in principle. The trade-off between light triggering input source and high dV/dt limitation has been treated via narrow grooved P-base for gate design. Key process technology for LTT was given, too.

• The Transactions of the Korean Institute of Power Electronics
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• v.24 no.6
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• pp.411-418
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• 2019

Light-triggered thyristors (LTTs) are essential components in high-power applications, such as HVDC transmission and several pulsed-power applications. Generally, LTT fabrication includes a deep diffusion of aluminum as a p-type dopant to form a uniform p-base region, which needs careful concern for contamination and additional facilities in silicon semiconductor manufacturing factories. We fabricated 4-inch 5,000 V LTTs with boron implantation and diffusion process as a p-type dopant. The LTT contains a main cathode region, edge termination designed with a variation of lateral doping, breakover diode, integrated resistor, photosensitive area, and dV/dt protection region. The doping concentration of each region was adjusted with different doses of boron ion implantation. The fabricated LTTs showed good light triggering characteristics for a light pulse of 905 nm and a blocking voltage (V_DRM) of 6,500 V. They drove an average on-state current (I_TAVM) of 2,270 A, peak nonrepetitive surge current (I_TSM) of 61 kA, critical rate of rise of on-state current (di/dt) of 1,010 A/㎲, and limiting load integral (I²T) of 17 MA²s without damage to the device.