• Journal of Photoscience
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• 제3권1호
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• pp.1-7
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• 1996

When cucumber (Cucumis sativus L.) cotyledon discs were floated on $\delta$-aminolevulinic acid, oxyfluorfen, or rose bengal solution under light condition following 20 h dark incubation, rapid electrolyte leakage from the tissues occurred. The electrolyte leakage from the tissues was dependent on the compounds treated, their concentrations, and the duration of light exposure to the tissues. Dark incubation before exposure to continuous white light enhanced electrolyte leakage from the tissues treated with the compounds and reduced lag period for the activity of the compounds. Electrolyte leakage from the treated tissues was greatly influenced by the light intensity to which they were exposed. Higher light intensities stimulated electrolyte leakage and reduced lag period. Porphyrin biosynthesis inhibitors, gabaculine and 4,6-dioxoheptanoic acid, completely inhibited electrolyte leakage from the oxyfluorfen-treated tissues. Protection against the activity of $\delta$-aminolevulinic acid from electrolyte leakage was complete with 4,6-dioxoheptanoic acid, but not with gabaculine. However, gabaculine and 4,6-dioxoheptanoic acid gave no such protection against rose bengal activity. In summary, our results indicate that $\delta$--aminolevulinic acid, oxyfluorfen, and rose bengal exert their effects by causing electrolyte leakage from the treated tissues in a similar manner, except that oxyfluorfen has an apparent lag period for its action on electrolyte leakage increase. All above compounds require preincubation of treated tissues in darkness and subsequent light exposure with a high intensity for their maximal activities. Our results also support that in the presence of light, $\delta$-aminolevulinic acid and oxyfluorfen cause cellular damage through the indirect generation of singlet oxygen from accumulated tetrapyrroles of porphyrin pathway, whereas rose bengal causes cellular damage through the direct generation of singlet oxygen.

• Current Optics and Photonics
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• 제3권6호
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• pp.516-521
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• 2019

The electrical leakage levels of GaN-based light-emitting diodes (LEDs) containing leakage paths are estimated using photoluminescence (PL) and photovoltaic properties under photoexcitation conditions. The PL intensity and open-circuit voltage (V_OC) decrease because of carrier leakages depending on photoexcitation conditions when compared with reference values for typical LED chips without leakage paths. Changes of photovoltage-photocurrent characteristics and PL intensity due to carrier leakage are employed to assess the leakage current levels of LEDs with leakage paths. The current corresponding to the reduced V_OC of an LED with leakage from the photovoltaic curve of a reference LED without leakage is matched with the leakage current calculated using the PL intensity reduction ratio and short-circuit current of the LED with leakage. The current needed to increase the voltage for an LED with a leakage under photoexcitation from V_OC of the LED up to V_OC of a reference LED without a leakage is identical to the additional current needed for optical turn-on of the LED with a leakage. The leakage current level estimated using the PL and photovoltaic properties under photoexcitation is consistent with the leakage level measured from the voltage-current characteristic obtained under current injection conditions.

• 한국전기전자재료학회논문지
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• 제21권9호
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• pp.844-847
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• 2008

The photo leakage currents of a conventional hydrogenated amorphous silicon(a-Si:H) thin film transistor(TFT) were investigated and analyzed in case of illumination from various light sources such as halogen lamp, cold cathode fluorescent lamp(CCFL) backlight, and white light emitting diode(LED) backlight. The photo leakage characteristics showed the apparent differences in the leakage level and in the $I_{on}/I_{off}$ ratio in spite of the similar luminances of light sources. This leakage level is expected to be related to the wavelength of the lowest intensity peak from the spectral characteristics of light sources.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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• pp.55-56
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• 2008

The photo leakage currents of a conventional hydrogenated amorphous silicon(a-Si:H) thin film transistor(TFT) were investigated and analyzed in the case of illumination from various lightsources such as halogen lamp, cold cathode fluorescent lamp(CCFL) backlight, and white light emitting diode(LED) backlight The photo leakage characteristics showed the apparent differences in the leakage level and in the $I_{on}/I_{off}$ ratio in spite of the similar luminances of light sources. This leakage level is expected to be related to the wavelength of the lowest intensity peak from spectral analysis of light sources.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.590-593
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• 2009

In the 2D local dimmable LED backlight system, each LED segment can be controlled separately. This can enhance the contrast ratio and reduce overall power consumption of LCDs. However, an artifact such as 'halo mura' can be observed around the bright object in the dark background. This is caused by the light leakage from the bright area into the dark one. Therefore, the 'halo mura' can be more easily observed in the oblique viewing direction. Thus, in this study, the perceivable degree of the halo mura is evaluated according to the level of the off-axis light leakage of LCDs. It is found that an acceptable degree of halo mura can be obtained in 2.0 cd/$m^2$ of the diagonal light leakage. In addition, the halo mura is unperceivable under 0.7 cd/$m^2$ of the diagonal light leakage which can be achieved with optimally compensated polarizers.

• Journal of Photoscience
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• 제8권2호
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• pp.61-66
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• 2001

Using maize green- and white-leaf tissue, we have examined the effect of various chemicals on cytoplasmic leakage with respect to the light requirement or chloroplast targeting for their activities. Oxyfluorfen, oxadiazon, diuron, and paraquat, which are known as representative herbicides acting on plant chloroplasts, caused the electrolyte leakage only in the green tissues, whereas 2, 4-dinitrophenol, rose bengal (singlet oxygen producing chemical) and methyl-jasmoante (senscence-stimulating chemical) play a role both in green- and white-tissue. Benzoyl(a) pyrene, generating superoxide radical upon light illumination, functions only in white tissues. Tralkoxydim, metsulfuron-methyl and norflurazon showed no effect in two tested plant samples. In terms of light requirement in electrolyte leakage activity, diuron, oxyfluorfen, oxadiazon, rose bengal, and benzoyl(a) pyrene absolutely require the light for their functions, but other chemicals did not. based on these results, we could classify into four different response types according to whether chemicals require light or chlroplasts for their action. This classification is likely to be applied to simply and rapidly identify the requirement of light and chlroplasts for the actions of chemicals, thereby it makes easy to characterize many new herbicides that their action mechanisms are unclear, and to elucidate the mode of action of them.

• Journal of Information Display
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• 제9권2호
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• pp.22-27
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• 2008

We propose an optical configuration of a vertical alignment (VA) liquid crystal (LC) cell to eliminate the light leakage in the diagonal direction. VA LC cell has an excellent contrast ratio in the normal direction due to the no phase-retardation. However, change of the phase-retardation occurs in all directions, which causes the light leakage and deteriorates the characteristics of the dark state. We designed the LC cell structure composed of multiple combinations with two A-plates and two C-plates in order to achieve wide viewing property on the Poincare sphere. From calculations, we show that the proposed structure can improve the viewing angle characteristics by compensating for the light leakage in all directions.

• Restorative Dentistry and Endodontics
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• 제25권1호
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• pp.85-90
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• 2000

For more esthetic treatments the use of composite in molar areas are increasing. But polymerzation shrinkage that cause marginal leakage and cuspal deflection has been the problems of composites. The purpose of this study is to compare the effect of low intensity curing and polishing period on marginal leakage. Cavities were prepared on the buccal or lingual surface of forty five sound extracted human teeth and etching, application of bonding agent and filling of composite was done. Group 1 was light cured at intensity of 600$mW/cm^2$ for 41 seconds and polished. Group 2 was light cured at intensity of 300$mW/cm^2$ for 2 seconds and polished and after polishing it was light cured for 40 seconds at 600$mW/cm^2$. Group 3 was light cured at intensity of 300$mW/cm^2$ for 2 seconds and waited for 5 minutes and after curing at 600$mW/cm^2$ for 40 seconds polishing was done. The specimens were thermocycled at $5^{\circ}C$ and $55^{\circ}C$ for 1000 cycles and immersed in 2% methylene blue solution for 24 hours. Composite-tooth interface was examined under stereobinocular microscope for dye penetration. The results were as follows : 1. Group which were cured at low intensity and polished after curing at high intensity showed less marginal leakage than group which were cured at high intensity for 41 seconds(p<0.05). 2. Marginal leakage between group which were cured at low intensity and polished immediately and group which were cured at high intensity for 41 second were not significantly different. Light curing at low intensity can reduce marginal leakage but polishing immediately after curing at low intensity for short time can affect marginal leakage.

• Current Optics and Photonics
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• 제3권2호
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• pp.164-171
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• 2019

Photoluminescence (PL) properties of GaN-based light-emitting diodes (LEDs) were analyzed to study the effects of carrier leakage on the luminescence properties at room temperature. The electrical leakage and PL properties were compared for LEDs showing leakages at forward bias and an LED with an intentional leakage path formed by connecting a parallel resistance of various values. The leakages at the forward bias, which could be observed from the current-voltage characteristics, resulted in an increase in the excitation laser power density for the maximum PL efficiency (ratio of PL intensity to excitation power) as well as a reduction in the PL intensity. The effect of carrier leakages on PL properties was similar to the change in PL properties owing to a reduction of the photovoltage by a reverse current since the direction of the carrier movement under photoexcitation is identical to that of the reverse current. Valid relations between PL properties and electrical properties were observed as the PL properties deteriorated with an increase in the carrier leakage. The results imply that the PL properties of LED chips can be an indicator of the electrical properties of LEDs.

• 한국광학회:학술대회논문집
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• 한국광학회 2007년도 하계학술발표회 논문집
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• pp.289-290
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• 2007

We have theoretically derived a electrical model and extracted a parasitic parameters of leakage current in InGaN/GaN light emitting diodes (LEDs). The parasitic parameters of our LED are $R_p=10^{10}{\Omega}$, $I_{0,2}=10^{-17}A$ and $n_2=3.6$, which provide information of leakage current.