• Title/Summary/Keyword: Light field display

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Study on The Electron-Beam Optics in The Micro-Column for The Multi-Beam Lithography (다중빔 리소그래피를 위한 초소형 컬럼의 전자빔 광학 해석에 관한 연구)

  • Lee, Eung-Ki
    • Journal of the Semiconductor & Display Technology
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    • v.8 no.4
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    • pp.43-48
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    • 2009
  • The aim of this paper is to describe the development of the electron-beam optic analysis algorithm for simulating the e-beam behavior concerned with electrostatic lenses and their focal properties in the micro-column of the multi-beam lithography system. The electrostatic lens consists of an array of electrodes held at different potentials. The electrostatic lens, the so-called einzel lens, which is composed of three electrodes, is used to focus the electron beam by adjusting the voltages of the electrodes. The optics of an electron beam penetrating a region of an electric field is similar to the situation in light optics. The electron is accelerated or decelerated, and the trajectory depends on the angle of incidence with respect to the equi-potential surfaces of the field. The performance parameters, such as the working distances and the beam diameters are obtained by the computational simulations as a function of the focusing voltages of the einzel lens electrodes. Based on the developed simulation algorithm, the high performance of the micro-column can be achieved through optimized control of the einzel lens.

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Electricla Properties of Xe Plasma Flat Lamp (Xe 플라즈마 평판 램프의 전기적 특성)

  • Choi, Yong-Sung;Cho, Jae-Cheol;Hong, Kyung-Jin;Lee, Woo-Sun;Lee, Kyung-Sup
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.12a
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    • pp.35-38
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    • 2006
  • As a display becomes large recently, Acquisition of high luminance and Luminance uniformity is becoming difficult in the existing CCFL or EEFL backlight system. So, study for a performance enhancement has enforced. but lamp development of flat type is asked for high luminance and a luminance uniformity security in of LCD and area anger trend ultimately. In this paper, we changed a tip shape of an electrode for production by the most suitable LCD backlight surface light source, and confirmed discharge characteristic along discharge gas pressure and voltage, and confirmed electric field distribution and discharge energy characteristic through a Maxwell 2D simulation. Therefore the discharge firing voltage characteristic showed a low characteristic than a rectangular type and round type in case of electrode which used tip of a triangle type, and displayed a discharge electric current as a same voltage was low.

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A Study on the Contrast Ratio Improvement of Surface Discharge AC PDP (면방전 AC PDP에서 콘트라스트 개선에 관한 연구)

  • An, Yang-Ki;Yoon, Dong-Han
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.51 no.11
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    • pp.536-540
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    • 2002
  • This paper proposes a method to drive an AC plasma display panel(PDP) with a significantly improved contrast ratio. In the proposed method, during the first sub-field of one frame, all PDP cells are reset by the ramp waveform, and during the other sub-field, only the cells turned on in the previous sub-field are reset. No light is emitted during the reset period of every sub-field except the first sub-field. For a 10-bit picture, the luminance of the dark level for the proposed method is 10 times lower than that for the conventional method, in which the ramp waveform for the reset is used in every sub-field. Accordingly, the contrast ratio for the proposed method is 10 times higher than that for the conventional method. For the 10-bit picture, the measured contrast ratio was about 3080:1 for the proposed method and about 285:1 with the conventional method, a result the contrast ratio has been increased in 10.8 times. This result shows that the proposed method can realize an image with high contrast ratio.

Amorphous Indium-Tin-Zinc-Oxide (ITZO) Thin Film Transistors

  • Jo, Gwang-Min;Lee, Gi-Chang;Seong, Sang-Yun;Kim, Se-Yun;Kim, Jeong-Ju;Lee, Jun-Hyeong;Heo, Yeong-U
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.170-170
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    • 2010
  • Thin-film transistors (TFT) have become the key components of electronic and optoelectronic devices. Most conventional thin-film field-effect transistors in display applications use an amorphous or polycrystal Si:H layer as the channel. This silicon layers are opaque in the visible range and severely restrict the amount of light detected by the observer due to its bandgap energy smaller than the visible light. Therefore, Si:H TFT devices reduce the efficiency of light transmittance and brightness. One method to increase the efficiency is to use the transparent oxides for the channel, electrode, and gate insulator. The development of transparent oxides for the components of thin-film field-effect transistors and the room-temperature fabrication with low voltage operations of the devices can offer the flexibility in designing the devices and contribute to the progress of next generation display technologies based on transparent displays and flexible displays. In this thesis, I report on the dc performance of transparent thin-film transistors using amorphous indium tin zinc oxides for an active layer. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium tin zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium tin zinc oxides was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 4.17V and an on/off ration of ${\sim}10^9$ operated as an n-type enhancement mode with saturation mobility with $15.8\;cm^2/Vs$. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium tin zinc oxides for an active layer were reported. The devices were fabricated at room temperature by RF magnetron sputtering. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

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A Study on Measurement and Analysis of In-Plane Deformations by Using Laser Speckle Interferometry (II) (레이저 스페클 간섭법을 이용한 면내 변형 측정 및 해석에 대한 연구 (II))

  • 강영준;노경완;나의균
    • Journal of the Korean Society for Precision Engineering
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    • v.15 no.12
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    • pp.113-119
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    • 1998
  • Recently Electronic Speckle Pattern Interferometry(ESPI) has been studied because it has the advantages to be able to measure the whole-field surface deformations of engineering components and materials in industrial areas with noncontact. The speckle patterns to be formed with interference phenomena of scattering light from rough surfaces illuminated by laser light have phase informations of surface deformations. In this study we used this interference phenomena and the phase shifting method to measure the inplane deformations, together with the use of digital image equipment to process the informations contained in the speckle pattern and to display consequent interferograms on TV monitor. FEA was performed before experiments and we obtained good agreement between the experimental results and FEA.

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Measurement and Analysis of in-plane deformation by laser interferometry (레이저 간섭법을 이용한 면내 변형 측정 및 해석)

  • 노경완;유원재;김동우
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 1997.04a
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    • pp.91-95
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    • 1997
  • ESPI(Electronic Speckle Pattern Interferometry) is new optical measuring method to be able to measure the surface deformations of engineering components and materials in industrial areas. Conventional measuring method of surface deformation such as the strain gauge have many demerits because it is contact and point-to-point measuring one. But ESPI that is non-contact, whole field measuring method can overcome previous disadvantages. The speckle pattern to be formed with interference phenomena of scattering light from rough surfaces illuminated by laser light have phase information of surface In this study we used this interference phenomena and the phase shifting method to measure the in- plane deformation, together with the use of digital equipment to process the information contained in the speckle pattern and to display consequent inter ferograms. Finally we obtained good agreement between the experimenta results and those of FEM..

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Emission zone in organic light-emitting diodes(OLEDs)

  • Noh, Sok-Won;Lim, Sung-Taek;Shin, Dong-Myung
    • 한국정보디스플레이학회:학술대회논문집
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    • 2000.01a
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    • pp.127-128
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    • 2000
  • Organic light-emitting diodes(OLEDs) are constructed using multilayer organic thin films. The hole-transport layer is PVK and the emitting material is rubrene and $Alq_3$. The emitting layer is doped with rubrene partially. As the partially-doped layer migrate from the interface PVK/emitting layer, the emission peak of rubrene decrease and diminish. By comparing with the previous reports, we propose the zero-field hole injection barrier at ITO/PVK interface and hole-trapping effect of rubrene in host materials as predominant factor to determine the emission zone.

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Single cell gap polymer-stabilized blue-phase transflective LCDs using internal nanowire grid polarizer

  • Cui, Hong-Qing;Ye, Zhi-Cheng;Hu, Wei;Lin, Xiao Wen;Chung, T.C.;Jen, Tean-Sen;Lu, Yan-Qing
    • Journal of Information Display
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    • v.12 no.3
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    • pp.115-119
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    • 2011
  • Optically isotropic liquid crystal (LC) mixture such as blue-phase LC and nanostructured LC composites exhibit the advantages of fast response time, high contrast ratio and wide-viewing angle due to the induced birefringence along the horizontal electric field. Utilizing this mixture, a novel single cell gap in-plane switching-type polymer-stabilized blue-phase transflective liquid crystal display by embedding the nanowire grid polarizer as a polarization-dependent reflective polarizer in the R region is proposed. This device can be used as a normal black mode without any quarter-wave plate or patterned in-cell phase retarder. Moreover, the transmittance is identical to the reflectance so that it will be suitable for single gamma driving. Detailed electro-optic performances, such as voltage-dependent light efficiency and viewing angle of the proposed device configuration, are investigated.

Photofield-Effect in Amorphous InGaZnO TFTs

  • Fung, Tze-Ching;Chuang, Chiao-Shun;Mullins, Barry G.;Nomura, Kenji;Kamiya, Toshio;Shieh, Han-Ping David;Hosono, Hideo;Kanicki, Jerzy
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1208-1211
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    • 2008
  • We study the amorphous In-Ga-Zn-O thin-film transistors (TFTs) properties under monochromatic illumination ($\lambda=420nm$) with different intensity. TFT off-state drain current ($I_{DS_off}$) was found to increase with the light intensity while field effect mobility ($\mu_{eff}$) is almost unchanged; only small change was observed for sub-threshold swing (S). Due to photo-generated charge trapping, a negative threshold voltage ($V_{th}$) shift is also observed. The photofield-effect analysis suggests a highly efficient UV photocurrent conversion in a-IGZO TFT. Finally, a-IGZO mid-gap density-of-states (DOS) was extracted and is more than an order lower than reported value for a-Si:H, which can explain a good switching properties of the a-IGZO TFTs.

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Microstructure and Strength of the Microjoined Electrode for the Lamp of the LCD Backlight Unit (TFT-LCD 백라이트 유닛(BLU) 램프용 전극 미세 접합부의 강도 및 미세조직)

  • Kim, Gwang-Soo;Kim, Sang-Duck
    • Korean Journal of Materials Research
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    • v.19 no.1
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    • pp.7-12
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    • 2009
  • TFT-LCD is the most popular type of flat display panel in the information technology field. The back light unit is a main part of the structure of a TFT-LCD panel. Occasionally, studies have shown that failures of the CCFL of the BLU occur due to the poor weld characteristics of these materials. The aim of this study was to prepare some technical data and to characterize a microjoined electrode for the CCFL. Microstructure examinations, microhardness measurements, resistance measurements and microtensile tests of the microjoined electrode were carried out. The result indicates that a large amount of grain coarsening exists in the heat-affected zone (HAZ) of the weld between the cup and the pin. This grain coarsening of the HAZ between the cup and pin is caused by the welding cycle, which may have an influence on the lowest microhardness values. Fracturing of the microjoined electrode also occurred at the HAZ close to the cup between the weld holding the cup and the pin. Additionally, no specific changes of the electrical resistance among the cup, pin, and lead wire themselves or in the microjoined electrode were observed.