• Current Optics and Photonics
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• v.5 no.2
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• pp.173-179
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• 2021

The electroluminescence (EL) intensities of GaN-based light-emitting diodes (LEDs) are estimated based on their photoluminescence (PL) properties. The PL intensity obtained under open-circuit conditions is divided into two parts: the PL intensity under a forward bias lower than the optical turn-on voltage, and the difference between the PL intensities under open-circuit conditions and under forward bias. The luminescence induced by photoexcitation under a constant forward bias lower than the optical turn-on voltage is primarily the PL from the excited area of the LED. In contrast the intensity difference, obtained by subtracting the PL intensity under the forward bias from that under open-circuit conditions, contains the EL induced by the photocarriers generated during photoexcitation. In addition, a reverse photocurrent is generated during photoexcitation under constant forward bias across the LED, and can be correlated with the PL-intensity difference. The relationship between the photocurrent and PL-intensity difference matches well the relationship between the injection current and EL intensity of LEDs. The ratio between the photocurrent generated under a bias and the short-circuit current is related to the ratio between the PL-intensity difference and the PL intensity under open-circuit conditions. A relational expression consisting of the ratios, short-circuit current, and PL under open-circuit conditions is proposed to estimate the EL intensity.

• Current Optics and Photonics
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• v.3 no.2
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• pp.164-171
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• 2019

Photoluminescence (PL) properties of GaN-based light-emitting diodes (LEDs) were analyzed to study the effects of carrier leakage on the luminescence properties at room temperature. The electrical leakage and PL properties were compared for LEDs showing leakages at forward bias and an LED with an intentional leakage path formed by connecting a parallel resistance of various values. The leakages at the forward bias, which could be observed from the current-voltage characteristics, resulted in an increase in the excitation laser power density for the maximum PL efficiency (ratio of PL intensity to excitation power) as well as a reduction in the PL intensity. The effect of carrier leakages on PL properties was similar to the change in PL properties owing to a reduction of the photovoltage by a reverse current since the direction of the carrier movement under photoexcitation is identical to that of the reverse current. Valid relations between PL properties and electrical properties were observed as the PL properties deteriorated with an increase in the carrier leakage. The results imply that the PL properties of LED chips can be an indicator of the electrical properties of LEDs.

• Korean Journal of Materials Research
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• v.32 no.6
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• pp.293-300
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• 2022

This study investigated a graded-refractive-index (GRIN) coating pattern capable of improving the light extraction efficiency of GaN light-emitting diodes (LEDs). The planar LEDs had total internal reflection thanks to the large difference in refractive index between the LED semiconductor and the surrounding medium (air). The main goal of this paper was to reduce the trapped light inside the LED by controlling the refractive index using various compositions of (TiO₂)_x(SiO₂)_1-x in GRIN LEDs consisting of five dielectric layers. Several types of multilayer LEDs were simulated and it was determined the transmittance value of the LEDs with many layers was greater than the LEDs with less layers. Then, the specific ranges of incident angles of the individual layers which depend on the refractive index were evaluated. According to theoretical calculations, the light extraction efficiency (LEE) of the five-layer GRIN is 25.29 %, 28.54 % and 30.22 %, respectively. Consequently, the five-layer GRIN LEDs patterned enhancement outcome LEE over the reference planar LEDs. The results suggest the increased light extraction efficiency is related to the loss of Fresnel transmission and the release of the light mode trapped inside the LED chip by the graded-refractive-index.

• Journal of information and communication convergence engineering
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• v.19 no.4
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• pp.269-275
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• 2021

Light-emitting diodes (LEDs) are modulated using a square wave pulse sequence for flicker prevention and dimming control in visible light communication (VLC). In a VLC transmitter, the high and low bits of the non-return-to-zero (NRZ) data are converted to two square waves of different frequencies, which continue for a finite time defined by the fill ratio in an NRZ bit time. As the average optical power was kept constant and independent of data transmission, the LED was flicker-free. Dimming control is carried out by changing the fill ratio of the square wave in the NRZ bit time. In the experiments, the illumination of the LED light was controlled in the range of approximately 19.2% to 96.2% of the continuous square wave modulated LED light. In the VLC receiver, a high-pass filter combined with a latch circuit was used to recover the transmitted signal while preventing noise interference from adjacent lighting lamps.

• Ocean and Polar Research
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• v.39 no.2
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• pp.107-114
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• 2017

In this study, we investigated the effects of light spectra on physiology stress and DNA damage in juvenile rock bream (Oplegnathus fasciatus) using light-emitting diodes (LEDs; green, 520 nm; red, 630 nm) at two intensities (0.25 and $0.5W/m^2$ ) with application of thermal stress (25 and $30^{\circ}C$). We measured the mRNA expression of heat shock protein 70 (HSP70) and the levels of plasma cortisol, glucose, aspartate aminotransferase (AspAT), and alanine aminotransferase (AlaAT). Additionally, DNA damage was measured using comet assays. Our findings showed that HSP70 mRNA expression and plasma cortisol, glucose, AspAT, and AlaAT levels were significantly higher after exposure to high temperatures and were significantly lower after exposure to green LED light. Thus, although high water temperatures induced stress in juvenile rock bream, green LED light inhibited stress. In particular, green LED light reduced stress and DNA damage to a greater degree than other light sources.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.23.2-23.2
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• 2011

This presentation will include an overview of III-Nitride LED technology, applications, key areas for future improvements, challenges such as efficiency droop. GaN-based high-power light-emitting diodes (LEDs) suffer from high-current loss mechanisms that lead to a significant decrease in internal quantum efficiency at high drive currents, a well-known phenomenon commonly referred to as efficiency droop. Although many attempts have been made to uncover this LED's darkest secret, there is still a lack of consensus on the dominant mechanism responsible for this detrimental phenomenon. In this presentation, proposed origins and corresponding solutions to the droop-causing mechanisms will be reviewed and discussed.

• Journal of Korean Society of Environmental Engineers
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• v.34 no.8
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• pp.523-527
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• 2012

This study was performed to determine optimum conditions of semi-continuous cultivation of chlorella sp. FC-21 cultivated under red light emitting diode (LED). Semi-continuous cultivation was conducted using red LED because red LED was found to be the best light source for chlorella sp. FC-21. During cultivation, phosphate and nitrogen were quickly diminished where cell concentration of chlorella was inversely proportional to the concentrations of phosphate and nitrogen in culture solution. To increase the period of dilution of culture solution, additional amounts of phosphate and nitrogen were inserted in the culture solution to increase the concentrations of phosphate and nitrogen. The cell concentrations of chlorella increased in the modified culture, but cell diameter was diminished as the dilution of culture was periodically conducted. When considered the cell concentration and cell diameter during the cultivation, amount of biomass produced was maintained constant.

• Korean Journal of Materials Research
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• v.21 no.5
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• pp.273-276
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• 2011

Ultraviolet (UV) light emitting diodes (LEDs) were grown on a patterned n-type GaN substrate (PNS) with 200 nm silicon-di-oxide (SiO2) nano pattern diameter to improve the light output efficiency of the diodes. Wet etched self assembled indium tin oxide (ITO) nano clusters serve as a dry etching mask for converting the SiO2 layer grown on the n-GaN template into SiO2 nano patterns by inductively coupled plasma etching. PNS is obtained by n-GaN regrowth on the SiO2 nano patterns and UV-LEDs were fabricated using PNS as a template. Two UV-LEDs, a reference LED without PNS and a 200 nm PNS UV-LEDs were fabricated. Scanning Electron microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Photoluminescence (PL) and Light output intensity- Input current- Voltage (L-I-V) characteristics were used to evaluate the ITO-$SiO_2$ nanopattern surface morphology, threading dislocation propagation, PNS crystalline property, PNS optical property and UVLED device performance respectively. The light out put intensity was enhanced by 1.6times@100mA for the LED grown on PNS compared to the reference LED with out PNS.

• Journal of Information Display
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• v.8 no.3
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• pp.1-4
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• 2007

The influence of a silane layer on the performances of polymer light emitting diode(pLED)s has been studied. Glycidoxypropyltrimethoxysilane(GPS) with an epoxy functional group was used as a surface modifier for ITO substrates. The GPS layer was inserted between an ITO and a poly(3,4)-ethylenedioxythiophene/polystyrenesulfonate(PEDOT) by wet process and the performances of PLEDs were investigated. The introduction of GPS layer increased the brightness and efficiency of PLEDs by 30%. In addition, the lifetime of PLEDs was also improved considerably by using GPS as a surface modifier.

• Journal of IKEEE
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• v.27 no.1
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• pp.30-37
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• 2023

To improve the efficiency and stability of colloidal quantum dot light-emitting diodes (QD-LEDs), it is essential to achieve charge balance within the QD emissive layer. Zinc oxide (ZnO) is widely used for constructing an electron transport layer in the state-of-the-art QD-LEDs, but spontaneous electron injection from ZnO often results in excessive electrons in QDs that significantly deteriorate the performance of QD-LEDs. In this study, we demonstrated the improved performance of QD-LEDs by modifying the electron injection property of ZnO with self-assembled monolayer (SAM)-treatment. As a result of improved charge balance, the external quantum efficiency and maximum luminance of QD-LEDs with SAM-treatment were improved by 25% and 200%, respectively, compared to the devices without SAM-treatment.