Proceedings of the Materials Research Society of Korea Conference (한국재료학회:학술대회논문집)
- 2011.05a
- /
- Pages.23.2-23.2
- /
- 2011
4181Overcoming the High-current Efficiency Loss Mechanism in GaN-based Light-emitting Diodes
Abstract
This presentation will include an overview of III-Nitride LED technology, applications, key areas for future improvements, challenges such as efficiency droop. GaN-based high-power light-emitting diodes (LEDs) suffer from high-current loss mechanisms that lead to a significant decrease in internal quantum efficiency at high drive currents, a well-known phenomenon commonly referred to as efficiency droop. Although many attempts have been made to uncover this LED's darkest secret, there is still a lack of consensus on the dominant mechanism responsible for this detrimental phenomenon. In this presentation, proposed origins and corresponding solutions to the droop-causing mechanisms will be reviewed and discussed.