• 전기전자학회논문지
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• 제15권2호
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• pp.134-142
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• 2011

본 논문에서는 3중 모드 고효율 DC-DC 벅 변환기를 설계하였다. 설계된 벅 변환기는 부하 전류가 큰 경우(100mA~500mA)에는 PWM(Pulse Width Modulation) 제어 방식을 사용하고, 부하 전류가 작은 경우(1mA~100mA)에는 PFM(Pulse Frequency Modulation) 제어 방식을 사용하며, 부하 전류가 1mA 이하인 대기모드(sleep mode)에서는 LDO(Low Drop Out)를 사용한다. 또한, PFM 모드에서 부하 전류가 작은 경우 효율을 증가시키기 위해 DPSS(Dynamic Partial Shutdown Strategy) 기법을 사용하였다. 그 결과 설계된 변환기는 넓은 부하 전류 범위에서 높은 효율을 얻을 수 있다. 제안된 벅 변환기는 CMOS 0.18um공정을 이용하여 설계되었다. 최대 효율은 96.4% 이고, 최대 부하 전류는 500mA이다. 입력과 출력 전압은 각각 3.3V와 2.5V이며, 칩 크기는 PAD를 포함하여 1.15mm ${\times}$ 1.10mm이다.

• 한국정보기술응용학회:학술대회논문집
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• 한국정보기술응용학회 2005년도 6th 2005 International Conference on Computers, Communications and System
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• pp.237-241
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• 2005

We present a device model for organic light emitting diodes(OLEDs) which includes charge injection, transport, recombination, and space charge effects in the organic materials. The model can describe both injection limited and space charge limited current flow and the transition between them. Calculated device current, light output, and quantum and power efficiency are presented for different cases of material and device parameters and demonstrate the improvements in device performance in bilayer devices. These results are interpreted using the calculated spatial variation of the electric field, charge density and recombination rate density in the device. We find that efficient OLEDs are possible for a proper choice of organic materials and contact parameters.

• 스마트미디어저널
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• 제11권9호
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• pp.21-29
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• 2022

센서 및 분석 경화시장에서 폭넓게 사용되고 있는 기존의 UV 광원들이 점차 LED로 교체 적용되고 있다. 그러나 UV LED의 광 성능이 기존 램프에 비하여 여전히 낮고 광 효율성도 낮아 효능성 감소 및 수명 저하 문제가 존재한다. 현재 환경과 UV램프의 기술적인 문제로 인하여 점차 LED교체가 이루어지고 있는 시점에서 UV LED의 성능 향상이 매우 중요하다. 본 연구에서는 UV LED의 수명 증가 및 성능 향상을 위한 new package 설계 및 분석을 실행하였다. 광소자에서 발생하는 열을 직접 방출하기 쉽도록 방열특성이 우수한 packaging 설계가 매우 중요한데, 본 연구에서는 열적 안전성을 기반으로 안정성이 우수한 패키지 구성 및 UV LED용 new packaging을 설계 구현하였다. 이를 통하여 광 효율 및 방열성능 향상을 위한 새로운 UV LED용 new packaging을 구성하고 전기적 광학적 특성을 각각 분석하였다. 또한 UV LED package의 방열성능 향상을 위해 높은 반사율 특성을 가지는 알루미늄(Al)를 이용, 최적의 렌즈 포커싱를 적용함으로서 광출력 효율을 증가 시킬 수 있었다. 기존 은(Ag)대비 광효율 결과가 약 ~30%이상 개선되었으며, 새로 적용된 광소자 패키지에서 광출력 저하 특성이 약 10% 이상 향상됨을 확인 할 수 있었다.

• 대한전자공학회논문지SP
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• 제37권4호
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• pp.56-64
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• 2000

본 논문에서는 패턴인식의 문제에서 배경이 물체에 겹치지 않는 영상일 때 잡음에 대한 안정성, 피크의 크기와 광효율의 조건에 대한 trade-off를 통해 필터를 설계하는 방법에 대해 언급한다. 필터를 설계하기위해 신호대 잡음비, 출력의 최대값대 출력에너지비, 광효율의 세가지 다른 조건을 사용한다. 필터의 성능을 시험하기 위해 여러 형태의 잡음과 필터 계수에 대해 컴퓨터 모의실험을 실시한다. 배경이 물체에 겹치지 않는 영상에 대해 기존의 필터보다 우수한 성능을 얻을 수 있다.

• Nuclear Engineering and Technology
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• 제52권12호
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• pp.2910-2917
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• 2020

Digital light processing three-dimensional (3D) printing technique is a powerful tool to rapidly manufacture plastic scintillators of almost any shape or geometric features. In our previous study, the main properties of light output and transmission were analyzed. However, a more detailed study of the other properties is required to develop 3D printed plastic scintillators with expectable and reproducible properties. The 3D printed plastic scintillator displayed an average decay time constants of 15.6 ns, intrinsic energy resolution of 13.2%, and intrinsic detection efficiency of 6.81% for 477 keV Compton electrons from the ¹³⁷Cs γ-ray source. The 3D printed plastic scintillator showed a similar decay time and intrinsic detection efficiency as that of a commercial plastic scintillator BC408. Furthermore, the presented estimates for the properties showed good agreement with the analyzed data.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권9호
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• pp.444-449
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• 2001

In this paper, a novel ultraviolet sensor is presented based on a photoluminescent porous silicon. Porous silicon layer was formed by chemical etching of surface of pn junction in a $HF(48%)-HNO_3(60%)-H_20$ solution. Incident ultraviolet(UV) light is converted to visible light by photoluminescent porous silicon layer, and then this visible light generates electron-hole pairs in the pn junction, which produces a photocurrent flow through the device. In order to maximize detection efficiency, the peak sensitivity wavelength of the pn junction diode was matched with the peak wavelength of Photoluminescence from porous silicon layer. The porous silicon ultraviolet sensor showed a large output current as UV intensity increases and but very low sensitivity to visible light. The detection sensitivity of porous silicon sensor was calculated as 2.91mA/mW. These results are expected to open up a possibility that the present porous silicon sensor can be used for detecting UV light in a visible background, compared to silicon UV detectors which have an undesirable response to visible light.

• 한국전기전자재료학회논문지
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• 제26권2호
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• pp.158-163
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• 2013

In this paper, thermal analysis of heatsink for 30 W class Chip-on-Board (COB) LED light source is performed by using SolidWorks Flow Simulation package. In order to increase the convection heat transfer, number of fin and shape of the heatsink is optimized. Furthermore, a copper spread is applied between the COB LED light source and the heatsink to mitigate the heat concentration on the heatsink. With the copper spread, the junction temperature between the COB LED light source and the heatsink is $50.9^{\circ}C$, which is $5.4^{\circ}C$ lower than the heatsink without the copper spread. Due to the improvement of the junction temperature, the light output is improved by 5.8% when the LED light source is stabilized. The temperature difference between the simulation and measured result of the heatsink with the copper spread is within $2^{\circ}C$, which verifies the validity of the thermal design method using a simulation package.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1421-1423
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• 1996

In this study, the effect of solar cell cover glass on the solar cell performance is evaluated. Silicon solar cell (active area:4*6cm, efficiency:12.6% at AMO condition) is used for this study. ITO(Indium tin Oxide) film thickness of the ITO/AR/substrate glass/solar cell structure samples are $40{\AA}$, $60{\AA}$, $160{\AA}$, $240{\AA}$ respectively. The solar cell maximum output power on the stacking structure variations showed 465mW in the AR/ITO/substrate glass/solar cell, and minimum output power showed 403mW in the AR/substrate glass/solar cell. The maximum output power of the solar cell on the ITO thickness variations of the ITO/AR/substrate glass/solar cell showed 460mW at $40{\AA}$ then decrease output power as ITO thickness increase. For environment tests, all samples are exposed UV light in the vacuum chanber. The output power degradation of AR(UVR)/substrate glass/solar cell stacking structure is small compared with ITO/AR(UVR)/substrate glass/solar cell stacking structure.

• 센서학회지
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• 제32권6호
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• pp.441-446
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• 2023

Electrical and optical characteristics of the GaN-based light-emitting diode (LED) with the improved multi-quantum well (MQW) structure have been studied for light source in bio-sensing systems. Novel GaN/In_0.1GaN/In_0.2GaN/In_0.1GaN/GaN and Al_0.1GaN/GaN/In_0.2GaN/GaN/Al_0.1GaN (MQW) structures were suggested, and their radiative recombination rate, light output power, electroluminescence, and external quantum efficiency were compared with those of the conventional GaN/In_0.2GaN/GaN MQW structure using device simulation. The LED with the GaN/In_0.1GaN/In_0.2GaN/In_0.1GaN/GaN MQW structure showed an excellent recombination rate of 5.57 × 10²⁸ cm^-3·s^-1 that was more than one order improvement over that of the conventional LED. In addition, the efficiency droop was relieved by the suggested stepped MQW structure.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.145-145
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• 2011

Light-emitting diodes (LEDs) based on III-nitrides compound semiconductors have achieved a high performance device available for display and illumination sector. However, the conventional c-plane oriented LED structures are still showing several problems given by the quantum confined Stark effect (QCSE) due to the effects of strong piezoelectric and spontaneous polarizations. The QCSE results in spatial separation of electron and hole wavefunctions in quantum wells, thereby decreasing the internal quantum efficiency and red-shifting the emission wavelength. Due to demands for improvement of device performance, nonpolar structure has been attracting attentions, since the quantum wells grown on nonpolar templates are free from the QCSE. However, current device performance for nonpolar LEDs is still lower than those for conventional LEDs. In this study, we discuss the potential possibilities of nonpolar LEDs for commercialization. In this study, we characterized current-light output power relation of the a-plane InGaN/GaN LEDs structures with the variation of quantum well structures. On-wafer electroluminescence measurements were performed with short pulse (10 us) and low duty factor (1 %) conditions applied for eliminating thermal effects. The well and barrier widths, and indium compositions in quantum well structures were changed to analyze the efficiency droop phenomenon.