• Journal of IKEEE
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• v.15 no.2
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• pp.134-142
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• 2011

This paper describes a tripple-mode high-efficiency DC-DC buck converter. The DC-DC buck converter operate in PWM(Pulse Width Modulation) mode at moderate to heavy loads(100mA~500mA), in PFM(Pulse Frequency Modulation)at light loads(1mA~100mA), and in LDO(Low Drop Out) mode at the sleep mode(<1mA). In PFM mode DPSS(Dynamic Partial Shutdown Strategy) is also employed to increase the efficiency at light loads. The triple-mode converter can thus achieve high efficiencies over wide load current range. The proposed DC-DC converter is designed in a CMOS 0.18um technology. It has a maximum power efficiency of 96.4% and maximum output current of 500mA. The input and output voltages are 3.3V and 2.5V, respectively. The chip size is 1.15mm ${\times}$ 1.10mm including pads.

• Proceedings of the Korea Society of Information Technology Applications Conference
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• 2005.11a
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• pp.237-241
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• 2005

We present a device model for organic light emitting diodes(OLEDs) which includes charge injection, transport, recombination, and space charge effects in the organic materials. The model can describe both injection limited and space charge limited current flow and the transition between them. Calculated device current, light output, and quantum and power efficiency are presented for different cases of material and device parameters and demonstrate the improvements in device performance in bilayer devices. These results are interpreted using the calculated spatial variation of the electric field, charge density and recombination rate density in the device. We find that efficient OLEDs are possible for a proper choice of organic materials and contact parameters.

• Smart Media Journal
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• v.11 no.9
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• pp.21-29
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• 2022

Ultra Violet(UV) is gradually being replaced with LED instead of general UV lamps. However, the light efficiency of UV LED is still lower than that of the general lamp, and the light efficiency is also low. Due to the current environment and technical problems of UV lamps, the LED replacements are gradually being made. In this study, a new package design and analysis were performed to increase the lifetime and performance of UV LEDs. A new packaging for UV LED were designed and implemented. The new packaging for UV LED was constructed to improve light efficiency. And the electrical and optical characteristics were analyzed respectively. To improve the optical efficiency in UV LED package, the Al has been used based on high reflectivity and applying the optimal lens focusing. Compared to the existing silver Ag, the light efficiency was improved by about 30% or more, and it was confirmed that the light output degradation characteristic was improved by about 10% in the newly applied optical device chip.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.37 no.4
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• pp.56-64
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• 2000

The design of filters for pattern recognition that have optimal trade-off for the criteria of noise robustness, peak sharpness and Homer efficiency, when input scene noise is spatially disjoint (nonoverlapping) with the target, are presented Three different criteria, ie, signal-to-noise ratio, peak-to-output energy ratio and light efficiency are used to design the filter. Computer simulation is made for the various types of noise and parameters to illustrate filter performance for optical pattern recognition. When we compare the new trade-off filter with the original optimal trade-off filter, the performance of trade-off filter for nonoverlapping background is better than that of trade-off filter for overlapping background.

• Nuclear Engineering and Technology
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• v.52 no.12
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• pp.2910-2917
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• 2020

Digital light processing three-dimensional (3D) printing technique is a powerful tool to rapidly manufacture plastic scintillators of almost any shape or geometric features. In our previous study, the main properties of light output and transmission were analyzed. However, a more detailed study of the other properties is required to develop 3D printed plastic scintillators with expectable and reproducible properties. The 3D printed plastic scintillator displayed an average decay time constants of 15.6 ns, intrinsic energy resolution of 13.2%, and intrinsic detection efficiency of 6.81% for 477 keV Compton electrons from the ¹³⁷Cs γ-ray source. The 3D printed plastic scintillator showed a similar decay time and intrinsic detection efficiency as that of a commercial plastic scintillator BC408. Furthermore, the presented estimates for the properties showed good agreement with the analyzed data.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.9
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• pp.444-449
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• 2001

In this paper, a novel ultraviolet sensor is presented based on a photoluminescent porous silicon. Porous silicon layer was formed by chemical etching of surface of pn junction in a $HF(48%)-HNO_3(60%)-H_20$ solution. Incident ultraviolet(UV) light is converted to visible light by photoluminescent porous silicon layer, and then this visible light generates electron-hole pairs in the pn junction, which produces a photocurrent flow through the device. In order to maximize detection efficiency, the peak sensitivity wavelength of the pn junction diode was matched with the peak wavelength of Photoluminescence from porous silicon layer. The porous silicon ultraviolet sensor showed a large output current as UV intensity increases and but very low sensitivity to visible light. The detection sensitivity of porous silicon sensor was calculated as 2.91mA/mW. These results are expected to open up a possibility that the present porous silicon sensor can be used for detecting UV light in a visible background, compared to silicon UV detectors which have an undesirable response to visible light.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.2
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• pp.158-163
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• 2013

In this paper, thermal analysis of heatsink for 30 W class Chip-on-Board (COB) LED light source is performed by using SolidWorks Flow Simulation package. In order to increase the convection heat transfer, number of fin and shape of the heatsink is optimized. Furthermore, a copper spread is applied between the COB LED light source and the heatsink to mitigate the heat concentration on the heatsink. With the copper spread, the junction temperature between the COB LED light source and the heatsink is $50.9^{\circ}C$, which is $5.4^{\circ}C$ lower than the heatsink without the copper spread. Due to the improvement of the junction temperature, the light output is improved by 5.8% when the LED light source is stabilized. The temperature difference between the simulation and measured result of the heatsink with the copper spread is within $2^{\circ}C$, which verifies the validity of the thermal design method using a simulation package.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1421-1423
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• 1996

In this study, the effect of solar cell cover glass on the solar cell performance is evaluated. Silicon solar cell (active area:4*6cm, efficiency:12.6% at AMO condition) is used for this study. ITO(Indium tin Oxide) film thickness of the ITO/AR/substrate glass/solar cell structure samples are $40{\AA}$, $60{\AA}$, $160{\AA}$, $240{\AA}$ respectively. The solar cell maximum output power on the stacking structure variations showed 465mW in the AR/ITO/substrate glass/solar cell, and minimum output power showed 403mW in the AR/substrate glass/solar cell. The maximum output power of the solar cell on the ITO thickness variations of the ITO/AR/substrate glass/solar cell showed 460mW at $40{\AA}$ then decrease output power as ITO thickness increase. For environment tests, all samples are exposed UV light in the vacuum chanber. The output power degradation of AR(UVR)/substrate glass/solar cell stacking structure is small compared with ITO/AR(UVR)/substrate glass/solar cell stacking structure.

• Journal of Sensor Science and Technology
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• v.32 no.6
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• pp.441-446
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• 2023

Electrical and optical characteristics of the GaN-based light-emitting diode (LED) with the improved multi-quantum well (MQW) structure have been studied for light source in bio-sensing systems. Novel GaN/In_0.1GaN/In_0.2GaN/In_0.1GaN/GaN and Al_0.1GaN/GaN/In_0.2GaN/GaN/Al_0.1GaN (MQW) structures were suggested, and their radiative recombination rate, light output power, electroluminescence, and external quantum efficiency were compared with those of the conventional GaN/In_0.2GaN/GaN MQW structure using device simulation. The LED with the GaN/In_0.1GaN/In_0.2GaN/In_0.1GaN/GaN MQW structure showed an excellent recombination rate of 5.57 × 10²⁸ cm^-3·s^-1 that was more than one order improvement over that of the conventional LED. In addition, the efficiency droop was relieved by the suggested stepped MQW structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.145-145
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• 2011

Light-emitting diodes (LEDs) based on III-nitrides compound semiconductors have achieved a high performance device available for display and illumination sector. However, the conventional c-plane oriented LED structures are still showing several problems given by the quantum confined Stark effect (QCSE) due to the effects of strong piezoelectric and spontaneous polarizations. The QCSE results in spatial separation of electron and hole wavefunctions in quantum wells, thereby decreasing the internal quantum efficiency and red-shifting the emission wavelength. Due to demands for improvement of device performance, nonpolar structure has been attracting attentions, since the quantum wells grown on nonpolar templates are free from the QCSE. However, current device performance for nonpolar LEDs is still lower than those for conventional LEDs. In this study, we discuss the potential possibilities of nonpolar LEDs for commercialization. In this study, we characterized current-light output power relation of the a-plane InGaN/GaN LEDs structures with the variation of quantum well structures. On-wafer electroluminescence measurements were performed with short pulse (10 us) and low duty factor (1 %) conditions applied for eliminating thermal effects. The well and barrier widths, and indium compositions in quantum well structures were changed to analyze the efficiency droop phenomenon.