• Title/Summary/Keyword: Light I-V

Search Result 444, Processing Time 0.026 seconds

Research of Vehicles Longitudinal Adaptive Control using V2I Situated Cognition based on LiDAR for Accident Prone Areas (LiDAR 기반 차량-인프라 연계 상황인지를 통한 사고다발지역에서의 차량 종방향 능동제어 시스템 연구)

  • Kim, Jae-Hwan;Lee, Je-Wook;Yoon, Bok-Joong;Park, Jae-Ung;Kim, Jung-Ha
    • Journal of Institute of Control, Robotics and Systems
    • /
    • v.18 no.5
    • /
    • pp.453-464
    • /
    • 2012
  • This is a research of an adaptive longitudinal control system for situated cognition in wide range, traffic accidents reduction and safety driving environment by integrated system which graft a road infrastructure's information based on IT onto the intelligent vehicle combined automobile and IT technology. The road infrastructure installed by laser scanner in intersection, speed limited area and sharp curve area where is many risk of traffic accident. The road infra conducts objects recognition, segmentation, and tracking for determining dangerous situation and communicates real-time information by Ethernet with vehicle. Also, the data which transmitted from infrastructure supports safety driving by integrated with laser scanner's data on vehicle bumper.

EKF Based SOH State Estimation Algorithm for UAV Li-Po Battery Pack (무인항공기 리튬폴리머 배터리팩용 EKF 기반 SOH 상태추정 알고리즘)

  • Jung, Sunghun
    • Journal of the Korea Convergence Society
    • /
    • v.8 no.6
    • /
    • pp.237-243
    • /
    • 2017
  • Ignorance of battery pack life could bring unexpected UAV crashes and so the SOH estimation became a next important factor to the SOC estimation. In contrast to the EV applications, the small UAV could not carry heavy and complex BMS and so it is required to apply a simple, light, cheap, but powerful BMS to prevent any accident. In this paper, we show two SOH estimation methods, using internal resistance and using $SOC_I$ and $SOC_V$ with CF. Results show that the SOH becomes about 92% after 30 number of discharging cycles.

ERS SAR observations of the Korean coastal waters

  • Mitnik, Leonid M.;Yoon, Hong-Joo;Dubina, Vyacheslav A.;Kim, Sang-Woo;Kim, Young-Seup
    • Proceedings of the KSRS Conference
    • /
    • 2003.11a
    • /
    • pp.1124-1126
    • /
    • 2003
  • The processes of regional scales in the East Korean coastal waters were investigated by analysis of the Synthetic Aperture Radar (SAR) images taken by the European Research Satellites ERS-1, ERS-2 and Envisat. More than 500 quick look frames taken in 1991-2003 were examined to detect the frames with clearly surface expressions of oceanic phenomena. 26 ERS-1/2 SAR and 11 Envisat wide swath Advanced SAR (ASAR) frames were selected and obtained from the European Space Agency in a form of the precision high-resolution images. The following oceanic phenomena and processes were evident in the radar imagery through the Korean costal waters: fronts, currents, eddies, internal waves, island and ship wakes, oil pollution, etc. They manifested themselves in the field of sea surface roughness, their scale ranged from several tens meters to about 100 km. The most common morphology of these phenomena was a series of contrast dark or light curvilinear lines and bands. The joint analysis of the discussed SAR images with other satellite and in situ data supported and enhanced our interpretation of SAR signatures.

  • PDF

The structure and optical properties of n-type and p-type porous silicon (n-type과 p-type 다공성 실리콘의 구조와 광학적 특성에 관한 연구)

  • 박현아;오재희;박동화;안화승;태원필;이종무
    • Journal of the Korean Vacuum Society
    • /
    • v.12 no.4
    • /
    • pp.257-262
    • /
    • 2003
  • The structure and optical properties of n-type and p-type porous silicon (PS) prepared by the chemical etching in the light and the dark, respectively, are reported in this paper. Microstructural features of the samples are mainly investigated by SEM, AFM XRDGI techniques. Also, their optical properties are investigated by photoluminescence (PL) and Fourier transform infrared absorption measurements. In the n-type PS, the room temperature photoluminescence is observed in a visible range from 500 nm to 650 nm in contrast to that in the blue region (400∼650 nm) in p-type PS. Further, semi-transparent Cu films in thickness range of ∼40 nm are deposited by rf-magnetron sputtering on PS to investigate the I-V characteristics of the samples.

Studies on the Production of Gibberellic acid (지베렐린 생산에 관한 연구)

  • 이영선;손형진;김익환;민태익
    • Microbiology and Biotechnology Letters
    • /
    • v.11 no.3
    • /
    • pp.217-222
    • /
    • 1983
  • By the treatment of Gibberella fujkuroi I-892 with mutagen such as UV light and N-methyl-N'-nitro-N-nitrosoguanidine, a mutant G. fujkuroi G-471 was selected as the highest producer of gibberellic acid among 800 mutant strains. It showed 30% increase of production yield compared with that of the parent strain. At optimum medium composition (saccharose 1.0%, ammonium tartarate 50mM, malt extract 1.0% KH$_2$PO$_4$ 0.5%, MgSO$_4$0.5%, FeSO$_4$0.0002%, trace element sol.0.002% (v/v), the yield of submerged culture increased by 30% after 7 days culture at 24$^{\circ}C$ (253mg/$\ell$). In submerged culture, the initial pH showed much effects on the increase of gibberellic acid production. The highest yield of the production was attained with pH adjustment to 4.0 at the initial stage of fermention.

  • PDF

Effect of Oxygen Mixture Ratio on the Properties of ZnO Thin-Films and n-ZnO/p-Si Heterojunction Diode Prepared by RF Sputtering (산소 혼합 비율에 따른 RF 스퍼터링 ZnO 박막과 n-ZnO/p-Si 이종접합 다이오드의 특성)

  • Gwon, Iksun;Kim, Danbi;Kim, Yewon;Yeon, Eungbum;Kim, Seontai
    • Korean Journal of Materials Research
    • /
    • v.29 no.7
    • /
    • pp.456-462
    • /
    • 2019
  • ZnO thin-films are grown on a p-Si(111) substrate by RF sputtering. The effects of growth temperature and $O_2$ mixture ratio on the ZnO films are investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and room-temperature photoluminescence (PL) measurements. All the grown ZnO thin films show a strong preferred orientation along the c-axis, with an intense ultraviolet emission centered at 377 nm. However, when $O_2$ is mixed with the sputtering gas, the half width at half maximum (FWHM) of the XRD peak increases and the deep-level defect-related emission PL band becomes pronounced. In addition, an n-ZnO/p-Si heterojunction diode is fabricated by photolithographic processes and characterized using its current-voltage (I-V) characteristic curve and photoresponsivity. The fabricated n-ZnO/p-Si heterojunction diode exhibits typical rectifying I-V characteristics, with turn-on voltage of about 1.1 V and ideality factor of 1.7. The ratio of current density at ${\pm}3V$ of the reverse and forward bias voltage is about $5.8{\times}10^3$, which demonstrates the switching performance of the fabricated diode. The photoresponse of the diode under illumination of chopped with 40 Hz white light source shows fast response time and recovery time of 0.5 msec and 0.4 msec, respectively.

Synthesis and photoluminescence of Ca3Si3O8F2: Ce4+, Eu3+, Tb3+ phosphor

  • Suresh, K.;PoornachandraRao, Nannapaneni V.;Murthy, K.V.R.
    • Advances in materials Research
    • /
    • v.3 no.4
    • /
    • pp.227-232
    • /
    • 2014
  • $Ce^{4+}$, $Eu^{3+}$, $Tb^{3+}$ co-doped $Ca_3Si_3O_8F_2$ phosphor was synthesized via solid state reaction method using $CaF_2$, $CaCO_3$ and $SiO_2$ as raw materials for the host and $Eu_2O_3$, $CeO_2$, and $Tb_4O_7$ as activators. The luminescent properties of the phosphor was analysed by spectrofluorophotometer at room temperature. The effect of excitation wavelengths on the luminescent properties of the phosphor i.e. under near-ultraviolet (nUV) and visible excitations was investigated. The emission peaks of $Ce^{4+}$, $Eu^{3+}$, $Tb^{3+}$ co-doped $Ca_3Si_3O_8F_2$ phosphor lays at 480(blue band), 550(green band) and 611nm (red band) under 380nm excitation wavelength, attributed to the $Ce^{4+}$ ion, $Tb^{3+}$ ion and $Eu^{3+}$ ions respectively. The results reveal that the phosphor emits white light upon nUV (380nm) / visible (465nm) illumination, and a red light upon 395nm / 535nm illumination. RE ions doped $Ca_3Si_3O_8F_2$ is a promising white light phosphor for LEDs. The emission colours can be seen using Commission international de l'eclairage (CIE) co-ordinates. A single host phosphor emitting different colours under different excitations indicates that it is a potential phosphor having applications in many fields.

EFFECT OF LASER IRRADIATION ON DENTIN SURFACE STRUCTURE AND SHEAR BOND STRENGTH OF LIGHT-CURED GLASS IONOMER. (상아질 표면 구조와 광중합형 글라스 아이오노머의 전단강도에 대한 레이저 조사의 효과)

  • Park, Mi-Ryoung;Kim, Jong-Soo;Kim, Yong-Kee
    • Journal of the korean academy of Pediatric Dentistry
    • /
    • v.25 no.1
    • /
    • pp.76-92
    • /
    • 1998
  • The purpose of this study was to evaluate the possible efficacy of Nd-YAG laser as a dentin conditioner by observing the laser irradiation dentin surface under scanning electron micrograph and measuring shear bond strength of restored light-cured glass ionomer mold. Fifty intact premolars were prepared for shear bond strength tests. The teeth were randomly divided into five groups as follows; Group I. no treatment Group II. 10% poly acrylic acid, 20 sec Group III. laser treatment 2 w, 20 Hz, 2 sec Group IV. laser treatment 2 w, 20 Hz, 5 sec Group V. laser treatment 2 w, 20 Hz, 10 sec Samples of each group were restored with light-cured glass ionomer cement after dentin conditioning and then measuring the shear bond strength of each specimen were measured using universal testing machine. Additional ten premolars were prepared for SEM analysis The result from the this study can be summarized as follows. 1. Shear bond strength of polyacrylic acid-treated group (II) was significantly higher than other groups (p<0.05). 2. No statistically significant difference could be found between three laser-treated groups (III, IV, V) in shear bond strength(p>0.05) 3. According to the result of observation under SEM, Polyacrylic acid was shown to have removed the smear layer effectively and opened the dentinal tubules, whereas the laser has produced the irregular surface mainly composed of melted and fused structure. The microcracks found in laser-treated groups increased in number with irradiation time and formed the regular mesh-type in 10 sec-irradiation group. 4. The ultrastructural change of dentin surface created by laser irradiation was found to the improper for bonding of the glass ionomer restorative materials. And the lower shear bond strength of laser irradiated group might have been due to the failure to form the suit able dentin surface for the glass ionomer to penetrated into and form the proper micromechanical retention.

  • PDF

Electrical Characteristics of Dye Sensitized Solar Cell According to Condition of Dye Adsorption (염료 흡착 조건에 따른 염료감응형 태양전지의 전기적 특성)

  • Kim, Ji-Woong;Lee, Kyung-Sup;Choi, Yong-Sung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.28 no.11
    • /
    • pp.737-742
    • /
    • 2015
  • This paper is designed to find out where power reaches the highest point as the load of solar cells varies. In addition, the current and power were measured when irradiation changes, and the correlation between current and power was investigated. On top of that, experiments were conducted with the light volume kept constant and with the incoming light angle changing in order to figure out the incoming light angle that produces the most power and to conduct analyses. It was ascertained that if the load increases, the current decreases and the voltage increases. Since the power of 0.9828[W] was the highest when measurements were done, it can be said that when a load of 30[%] is applied to the solar cells, they are the most efficient.

Solution-Processed Quantum-Dots Light-Emitting Diodes with PVK/PANI:PSS/PEDOT:PSS Hole Transport Layers

  • Park, Young Ran;Shin, Koo;Hong, Young Joon
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2015.08a
    • /
    • pp.146-146
    • /
    • 2015
  • We report the enhanced performance of poly(N-vinylcarbozole) (PVK)/poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)-based quantum-dot light-emitting diodes by inserting the polyaniline:poly (p-styrenesulfonic acid) (PANI:PSS) interlayer. The QD-LED with PANI:PSS interlayer exhibited a higher luminance and luminous current efficiency than that without PANI:PSS. Ultraviolet photoelectron spectroscopy results exhibited different electronic energy alignments of QD-LEDs with/without the PANI:PSS interlayer. By inserting the PANI:PSS interlayer, the hole-injection barrier at the QD layer/PVK interface was reduced from 1.45 to 1.23 eV via the energy level down-shift of the PVK layer. The reduced barrier height alleviated the interface carrier charging responsible for the deterioration of the current and luminance efficiency. This suggests that the insertion of PANI:PSS interlayer in QD-LEDs contributed to (i) increase the p-type conductivity and (ii) reduce the hole barrier height of QDs/PVK, which are critical factors leading to improve the efficiency of QD-LEDs.

  • PDF