• Title/Summary/Keyword: Life gate

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A Study on the 'Closed ㄱㄴ Type' of Traditional Folk Housing in Goyang, Gyonggi-do, Focused to Dweller's Life (거주자 생활중심으로 본 경기 고양 전통민가 연구 - 폐쇄형 ㄱㄴ자집을 중심으로 -)

  • Lee, Hee-Bong
    • Journal of architectural history
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    • v.14 no.3 s.43
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    • pp.53-76
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    • 2005
  • Through a field study of the folk houses, 'Closed ㄱㄴ Type' in Goyang-si, Gyonggj-do, focused on the dweller's life by the method of ethnographic interview, observation, and physical survey. L and opposite L type of inner and outer buildings form a closed inner court, and innermost backyard for woman is enclosed by fence. Form and space of the house contains dweller's traditional life. Outer space of a front gate becomes semiprivate space, for thrashing and piling up harvest and raising vegetables and pigs. Confucius principle does not fully dominate dweller's life of ancestral rite at Daecheong floor, and separation of man's and woman's quarter. Superstitious worship activities took place for lord of site and house. In everyday life, Anbang, inner main room, is assigned for parent's quarter instead of woman's quarter, and Geornbang, next room, was for son's family. Anbang has symbolic meaning for a place of deathbed. House contains agricultural activities, crop harvesting, thrashing, putting into storage, hulling rice, and keeping grain near kitchen. At present, rooms are needed more; sheds are made into rooms, rooms are enlarged toward outside, half outside space like Daechong floor becomes interior space by sash screen. And modern facilities of kitchen and bathroom are equipped for convenience. At the end, meaning and generative principle of those forms are discovered.

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A Study on Slow Driving of Metropolitan Train for Disorder Condition of Platform Safety Gate using LTE-R and Beacon (LTE-R과 비콘을 활용한 승강장안전문 장애발생 시 열차 서행운전에 관한 연구)

  • Joh, Eungyoung;Noh, Jowon;Kim, Jin-Tea;Lee, Sunghwa
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.20 no.3
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    • pp.31-36
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    • 2020
  • The LTE-R system is a system consisting of a packet network that provides all IP-based services. Continuous failures related to the platform safety gate and subsequent safety accidents related to passengers and safety gate workers continue. The secondary damage caused by the failure of the platform safety door and the related human life damage have emerged as a major social issue.. By linking the beacon system to the Long Term Evoluton-Railway (LTE-R) network, an LTE-based railway wireless network currently in operation or being installed, it precisely locates trains and provides standardized fault alerts to train crews. When entering into the station, ultimately we will decelerate the train and reduce the accidents of metropolitabn railroad traffic by securing safe driving.

Development of the Maintenance System for Gate Bridge (배수갑문 노후도 감시시스템 구축연구)

  • Kim, Kwan-Ho;Cho, Young-Kweon;Kim, Myeong-Won
    • Proceedings of the Korea Concrete Institute Conference
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    • 2008.04a
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    • pp.1025-1028
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    • 2008
  • Using of maintenance system for gate bridge algorism, We made out algorism and engine for prediction of life cycle by neutralization, freezing-thawing and damage from sea wind. To objective of this system, user can use easily with maintenance system for gate bridge. Also, to improve of maintenance efficiency, web-program made out by superannuated evaluation and analysis of field exposure data. To develope web-program, we framing structure design of database, which is adapted to method of maintenance, repair, and reinforcing

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Environmental Impact Evaluation of Virgin Pulp Using Life Cycle Assessment Methodology (LCA기법을 이용한 천연펄프의 환경 영향 평가)

  • 김형진;조병묵;황용우;박광호
    • Journal of Korea Technical Association of The Pulp and Paper Industry
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    • v.36 no.1
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    • pp.49-60
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    • 2004
  • Life Cycle Assessment for the pulp, which is mainly used as the raw material of fine paper, base paper for food packaging and paper cup, has been carried out in this study to consider environmental aspects by quantifying the environmental emission and to evaluate its environmental impact potential. The system boundary was selected from cradle to gate stage(raw material acquisition, transportation of raw material and product manufacturing) of the product. Environmental impact was divided into 8 categories considering Korean situation: abiotic resource depletion, global warming, ozone depletion, acidification, eutrophication, photochemical oxidant creation, ecotoxicity and human toxicity. In Life Cycle Impact Assessment(LCIA) methodology phase, Ecopoint, Eco-indicator 95 and Korean eco-indicator were used and the results carried out by each methodology were compared. The results from this study were also compared with those of foreign study to verify the reliability of the results. The results of the study could be utilized as the basic data for Environmental Management System(EMS), Design for Environment(DfE) and Type III eco-labeling in the paper and paper-related industry.

Simulation of Power IGBT and Transient Analysis (전력용 IGBT의 시뮬레이션과 과도 해석)

  • 서영수
    • Journal of the Korea Society for Simulation
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    • v.4 no.2
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    • pp.41-60
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    • 1995
  • The IGBT(Insulated Gate Bipolar Transistor) is a power semiconductor device that has gained acceptance among circuit design engineers for motor drive and power converter applications. IGBT devices(International Rectifier, Proposed proposed model etc) have the best features of both power MOSFETs and power bipolar transistors, i.e., efficient voltage gate drive requirememts and high current density capability. When designing circuit and systems that utilize IGBTs or other power semiconductor devices, circuit simulations are needed to examine how the devices affect the behavior of the circuit. The interaction of the IGBT with the load circuit can be described using the device model and the state equation of the load circuit. The voltage rise rate at turn-off for inductive loads varies significantly for IGBTs with different base life times, and this rate of rise is important in determing the voltage overshoot for a given series resistor-inductor load circuit. Excessive voltage overshoot is potentially destructive, so a snubber protection circuit may be required. The protection circuit requirements are unique for the IGBT and can be examined using the model. The IGBT model in this paper is verified by comparing the results of the model with experimented results for various circuit operating conditions. The model performs well and describes experimented results accurately for the range of static and dynamic condition in which the device is intended to be operated.

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Analysis of Device Characteristics of NMOSFETs on Fluorine Implantation (Fluorine 주입에 따른 NMOSFET의 소자 특성 연구)

  • Kwon, Sung-Kyu;Kwon, Hyuk-Min;Lee, Hwan-Hee;Jang, Jae-Hyung;Kwak, Ho-Young;Go, Sung-Yong;Lee, Weon-Mook;Lee, Song-Jae;Lee, Hi-Deok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.1
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    • pp.20-23
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    • 2012
  • In this paper, we investigated the device performance on fluorine implantation, hot carrier reliability and RTS (random telegraph signal) noise characteristics of NMOSFETs. The capacitance of the fluorine implanted NMOSFET decreased due to the increase of the gate oxide thickness. RTS noise characteristics of the fluorine implated NMOSFET was improved approximately by 46% due to the decrease of trap density at Si/$SiO_2$ interface. The improved gate oxide quality also results in the longer hot carrier life time.

Correlation between Physical Defects and Performance in AlGaN/GaN High Electron Mobility Transistor Devices

  • Park, Seong-Yong;Lee, Tae-Hun;Kim, Moon-J.
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.2
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    • pp.49-53
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    • 2010
  • Microstructural origins of leakage current and physical degradation during operation in product-quality AlGaN/GaN high electron mobility transistor (HEMT) devices were investigated using photon emission microscopy (PEM) and transmission electron microscopy (TEM). AlGaN/GaN HEMTs were fabricated with metal organic chemical vapor deposition on semi-insulating SiC substrates. Photon emission irregularity, which is indicative of gate leakage current, was measured by PEM. Site specific TEM analysis assisted by a focused ion beam revealed the presence of threading dislocations in the channel below the gate at the position showing strong photon emissions. Observation of electrically degraded devices after life tests revealed crack/pit shaped defects next to the drain in the top AlGaN layer. The morphology of the defects was three-dimensionally investigated via electron tomography.

Precise pressure sensor using piezoelectric nanocomposites integrated directly in organic field-effect transistors

  • Tien, Nguyen Thanh;Trung, Tran Quang;Seol, Young-Gug;Lee, Nae-Eung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.500-500
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    • 2011
  • With recent advances in flexible and stretchable electronics, the development of physically responsive field-effect transistors (physi-FETs) that are easily integrated with transformable substrates may enable the omnipresence of physical sensing devices in electronic gadgets. However, physical stimuli typically induce whole sensing physi-FET devices under global influences that also cause changes in the parameters of FET transducers, such as channel mobility and dielectric capacitance that prevent proper interpretations of response in sensing materials. Extended-gate structures with isolated stimuli have been used recently in physi-FETs to demonstrate performances of sensing materials only. However, such approaches are limited to prototype researches since isolated stimuli rarely occur in real-life applications. In this report, we theoretically and experimentally demonstrated that integrating piezoelectric nanocomposites directly into flexible organic FETs (OFETs) as gate dielectrics provides a general research direction to physi-FETs with a simple device structure and the capability of precisely investigating functional materials. Measurements with static stimulations, which cannot be performed in conventional systems, exhibited giant-positive d33 values of nanocomposites of barium titanate (BT) NPs and poly (vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)).

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The Evaluation of Explosion For Toluene Storage Tank by Computer-Aided Fault Tree Analysis (Fault Tree Analysis(FTA)에 의한 Toluene저장 Tank의 폭발해석)

  • Chung, Jae-Hee;Yi, Young-Seop
    • Journal of the Korean Society of Safety
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    • v.3 no.2
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    • pp.5-16
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    • 1988
  • This study is conducted to evaluate the explosion of tolune storage tank in the petrochemical plant by Fault Tree Analysis. The conclusions are as follows; 1) Fault Tree diagram and the required computer program for evaluation of explosion accident is developed. 2) The probability of the top event, explosion accident, is $1.5\;{\times}\;10^{-8}$ per year, so there is almost no possibility of explosion during the life cycle of tank. However, the probability of Gate 6 and Gate 7 is 8.8 per month, therefore, attention should be paid to them for accident prevention. 3) The number of minimal cut sets is 67 sets which are not calculated the probability of each set, because of the lack of computer capacity. All the minimal cut sets should be examined case by case. However, it is necessary to be paid attention to COM1, 126, 131, and COM4 in minimal cut sets, because the number of appearance is so high. 4) The number path sets is 70 sets which are not calculated the probability of each set, because of the lack of computer capacity. It is very useful to prepare safety checklist by using this minimal path sets. Also, the events which appear many times, 123, COM5, 139, 127 and 128, are very high in reliability.

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Pathological Mechanistic Study of Conducting Fire Back to Its Origin (인화귀원(引火歸原)의 병기론 연구)

  • Chough, Won-Joon;Kim, Yeong-Mok
    • Journal of Physiology & Pathology in Korean Medicine
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    • v.21 no.4
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    • pp.795-802
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    • 2007
  • The fire not to back to its origin(火不歸原) is said that source yang(元陽) of sea of qi(氣海) rises because fire(火) of lower energizer(下焦) can't return to its origin. Successive medical men regarded the cause of it as yang deficiency(陽虛) or yin deficiency(陰虛) generally, but Jangseoksun(張錫純) presented eight kinds of cause, they are syndrome of upcast yang(戴陽證), deficiency of qi(氣虛), yin deficiency, yin and yang deficiency(陰陽虛), thoroughfare qi ascending counterflow(衝氣上衝), heart fire(心火), yang deficiency with cold fluid retention(寒飮) in middle energizer(中焦寒飮), yang deficiency with sunken cold locked in(沈寒錮冷). The method of conducting fire back to its origin may be the treatment of fire not to back to its origin as an interpretation of the phrase in a broad sense, but it is limited to yang deficiency with sunken cold locked in besides syndrome of upcast yang as the treatment based on pathological conditions. By this standpoint Eunsuryong(殷壽龍) used conducting fire back to its origin to remove hidden cold(伏寒) and make rising false fire(假火) settle. The meaning of conducting fire back to its origin is not just raise yang qi(陽氣) but break sunken cold locked in by using the drugs like Buja(附子), Yukgye(肉桂). Jakyak(芍藥) can concentrate yang qi on the life gate(命門) by converging it, Sukjihwang(熟地黃) can supply yin essence(陰精) and check the intense nature of tonifing yang(補陽) drugs. So if we want to use the method of conducting fire back to its origin, we should confirm the symptoms of sunken cold locked in and yang deficiency not to misdiagnose yin deficiency.