• 한국세라믹학회지
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• 제35권9호
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• pp.995-1001
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• 1998

As a basic study for cathode materials of {{{{ { {LiMn }_{2 }O }_{4 } }}-based lithium-ion secondary batteries Li({{{{ { { { {Mn }_{1-$\delta$ }Nb }_{$\delta$} )}_{2 }O }_{4 } }} ($\delta$=0.05, 0.1, 0.2) materials which Nb is substituted for Mn were synthesized by the solid state reaction at 80$0^{\circ}C$ and 110$0^{\circ}C$ respectively. The second phase {{{{ { LiNbO}_{3 } }} appeared above $\delta$=0.1 As the result of im-pedance analysis as the amount of substituted Nb increased the resistivity of grain boundary increased greatly. Compared to undoped-{{{{ { {LiMn }_{2 }O }_{4 } }} the electrical conductivity of Li({{{{ { { { {Mn }_{1-$\delta$ }Nb }_{$\delta$} )}_{2 }O }_{4 } }} decreased slightly but is charging capacity and potential plateau increased.

• 한국전기전자재료학회논문지
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• 제13권12호
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• pp.1051-1057
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• 2000

A traveling-wave CPW(coplanar waveguide) electrode with abruptly broken input/output-taper for LiNbO$_3$optical modulator was designed and fabricated. The electrical characteristics of traveling-wave electrode on z-cut LiNbO$_3$crystal with SiO$_2$buffer layers were measured by network analyzer. To confirm the possibility of the electro-optic modulator electrode, detailed calculations of the impedance, microwave effective index and attenuation constants are presented as a function of the microwave electrode thickness, but the buffer layer thickness is fixed as 1${\mu}{\textrm}{m}$. These characteristics are discussed from the viewpoint of the device optimization and are expected to be design guides for the LiNbO$_3$modulator’s electrodes.

• 한국전기전자재료학회논문지
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• 제21권6호
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• pp.517-523
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• 2008

The microwave dielectric properties of $LiNb_3O_8-TiO_2$ based ceramics with low firing agents, CuO, $Bi_2O_3$, $B_2O_3$, $SiO_2$, $TiO_2$, were investigated to improve the sintering condition for the LTCC system. According to the X-ray diffraction and SEM, the ceramics of $LiNb_3O_8-TiO_2$ with low firing agents showed no significant second phases within a range of experiments, and fine microstructures. By adding the low firing agents, the sintering temperature decreased from $1200^{\circ}C$ to $925^{\circ}C$. Based on the results of electrical measurements, the $LiNb_3O_8-TiO_2$ ceramics showed a promising microwave dielectric properties for LTCC applications, those are ${\varepsilon}_r$ (dielectric constant) = 44, Q f (quality factor) = 18000, and ${\tau}_f$ (the temperature coefficient of resonant frequency) = $-1.5\;ppm/^{\circ}C$.

• 대한전자공학회논문지
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• 제16권2호
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• pp.15-18
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• 1979

집적황학 도파관을 만들기 위해 LiNbO3 substrate 태로 전위원소인 Ti를 확산시켰다. L O out-diffusion 모드를 제거시킴으로써 단일 모드 도파관이 제작 될 구 있었다. 특성 측정에는 He- Ne 레이저(λ= 0.6328μm)와 프리즘 결합 방법이 사용되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.63-66
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• 1998

Prototype MFSFET′s using ferroelectric oxide LiNbO$_3$ as a gate insulator have been successfully fabricated with the help of 2 sheets of metal masks and demonstrated nonvolatile memory operations of the MFSFET′s. The estimated field-effect electron mobility and transconductance on a linear region of the fabricated FET were 600 $\textrm{cm}^2$/V.s and 0.16 mS/mm, respectively. The drain current of the "on" state was more than 4 orders of magnitude larger than the "off" state current at the same "read" gate voltage of 0.5 V, which means the memory operation of the MFSFET. A write voltage as low as $\pm$3 V, which is applicable to low power integrate circuits, was used for polarization reversal.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 13th KACG Technical Meeting `97 Industrial Crystallization Symposium(ICS)-Doosan Resort, Chunchon, October 30-31, 1997
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• pp.111-115
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• 1997

Iron-doped LiNbO$_3$ crystals were grown by floating zone(FZ) method with different [Li]/[Nb] ratio in order to investigate doping effects of transition metal impurity in LiNbO$_3$ crystal. The grown crystals were analyized edge in UV/VIS/IR spectrometry and EPMA(electron probe micro-analysis). The absorption edge in UV-VIS region and OH-absorption peak in IR region were investigated. The change of Fe concentration along the solidification direction was also investigated

• 한국결정성장학회지
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• 제16권2호
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• pp.53-58
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• 2006

조화용융조성 $LiNbO_3$ 결정에 외부 전계를 인가하였을 때 초기 도메인 생성 및 이동에 관하여 연구하였다. 0.5mm 두께의 $LiNbO_3$ 결정에 23.5, 22.0, 21.0kV/mm의 전계를 인가하였을 때 도메인 벽은 각각 28.70, 16.02, $5.75{\mu}m/sec$의 속도를 나타내었다. 분극 반전 시스템에 전류 제어를 위한 외부저항으로 $1 M{\Omega}$을 사용하였을 시 너무 빠른 도메인 성장으로 인하여 원활한 분극 반전 제어가 이루어지지 않으므로 $10 M{\Omega}$ 외부저항을 사용하여 전하량을 제어하여 50% duty cycle을 가진 주기적 분극 반전 $LiNbO_3$ 결정을 제작하였다.

• 한국결정성장학회지
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• 제19권1호
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• pp.11-14
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• 2009

Micro-pulling down(${\mu}-PD$)법을 이용하여 직경 2mm, 길이 $15{\sim}25\;mm$의 Zn와 Yb가 첨가된 near-stoichiometric 조성의 $LiNbO_3$ 단결정을 성장하였다. 일정 직경의 매끄럽고 결함이 없는 양질의 단결정임을 확인하였고, 결정 내 첨가된 Zn와 Yb의 조성이 고루 분포되었음을 알 수 있었다. Raman spectra를 통해 나타난 모든 peak은 $LiNbO_3$ power의 peak과 일치함을 알 수 있었고, 이를 통해 Hexagonal 구조의 $LiNbO_3$가 성장되었음을 확인할 수 있었다. Zn의 첨가량 증가에 따른 IR 영역의 투과도 비교를 통해 광손상을 억제에 효과가 있는 Zn 첨가의 역치량이 1 mol%임을 알 수 있었다.

• 한국광학회:학술대회논문집
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• 한국광학회 1989년도 제4회 파동 및 레이저 학술발표회 4th Conference on Waves and lasers 논문집 - 한국광학회
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• pp.222-224
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• 1989

A new fabrication method of proton-diffused LiNbO3 channel waveguides with self-aligned SiO2-Cladding structures are reported, which provides easy control of mode pattern shapes and sizes.

• 한국결정성장학회지
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• 제2권1호
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• pp.30-36
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• 1992

$LiNbO_3$단결정의 조성비 변화에 따른 탄성표면파 특성을 축정하기 위해 47-50 $Li_2O$ mol% 조성의 $LiNbO_3$단결정을 성장시켜 $128^{\circ}$Y cut wafer를 제조하였다. 제작된 wafer 위에 사진식각법을 이용하여 지연선(Delay line)을 형성시켰다. Pulse-echo overlap mehtod로 지연시간을 측정하여, 탄성표면파 속도$(V_s)$, 전기기계결합계수$(K_s^2)$ 및 $-50^{\circ}C~100^{\circ}C$ 온도 범위에서 지연시간 온도계수(TCD)의 조성비에 대한 의존성을 조사하였다.