• 한국전기전자재료학회논문지
• /
• 제11권5호
• /
• pp.400-406
• /
• 1998

We investigated the preparation and guided-mode properties of $Ti:LiNbO_3$ waveguides which were fabricated by Ti in-diffusion. The diffusion method to reduce the Li out-diffusion was proposed. The optical guided-mode and propagation loss based on butt-coupling pigtailed with PMF-input were measured. How to improve the polishing grade of waveguide endfaces is newly proposed in this paper. To show the mode propagations, the BPM simulations of channel waveguide are described.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1997년도 추계학술대회 논문집
• /
• pp.77-79
• /
• 1997

A 5Gbps LiNb $O_3$ optical phase modulator was packaged and described. A APE(annealed proton exchange) method was employed for the optical waveguide and the electrode of ACPS (asymmetric coplanar strip) type was formed by electro-plating on LiNb $O_3$ fort applying microwave signal. The resulted phase modulator exhibited a single mode at a 1550nm wavelength and Its modulation bandwidth, Insertion loss and driving voltage showed 7$^{GHz}$, 3. $O^{dB}$ and 6V. respectively.y.

• 한국결정성장학회지
• /
• 제8권1호
• /
• pp.10-17
• /
• 1998

Lithium Niobate($LiNbO_3$) 단결정 소재의 광손상에 대한 저항성을 향상시키는 첨가이온으로 잘 알려져 있는 $Mg^{2+}$ 및 $Zn^{2+}$ 이온을 첨가하여 육성한 단결정들의 특성을 비교 분석하였다. 특히 고강도 laser 광의 조사시에 더욱 우수한 특성을 보이는 것으로 알려진 $Zn^{2+}$이온의 첨가량에 따른 광학적 특성 및 전기적 특성의 변화를 측정하여 광손상 저항성을 평가하였으며, 고강도 laser 기기에의 응용 가능성을 고찰하였다.

• Bulletin of the Korean Chemical Society
• /
• 제20권8호
• /
• pp.893-896
• /
• 1999

Novel citric acid based Ti, Nb and Ta precursors that are highly stable in the presence of water were developed. No alkoxides of Ti, Nb and Ta were utilized in the preparation, instead much less moisture-sensitive metallic Ti, NbCl5 and TaCl5 were chosen as starting chemicals for Ti, Nb and Ta, respectively. The feasibility of these chemicals as precursors is demonstrated in the powder synthesis of BaTi4O9, Y3NbO7 and LiTaO3. The water-resistant Ti precursor was employed as a new source of water-soluble Ti in the amorphous citrate method, and phase pure BaTi4O9 in powdered form was successfully synthesized at 800 ？. The Pechini-type polymerizable complex method using the water-resistant Nb and Ta precursors was applied to the synthesis of Y3NbO7 and LiTaO3, and both the powder materials in their pure form were successfully synthesized at reduced tempera-tures, viz. 500-700 ？. The remarkable retardation of hydrolysis of these water-resistant precursors is explained in terms of the partial charge model theory.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 하계학술대회 논문집
• /
• pp.288-293
• /
• 2000

BPM simulation was used in order to fabricate the LiNbO$_3$optical waveguide with optical source of He-Ne laser(λ=0.6328[$\mu$m]). we observed electric field E$_{x}$, E$_{y}$ in the x,y-direction are simulated at the LiNbO$_3$substrate (X1 55[$\mu$m]$\times$Z1 5000[$\mu$m]), where the depth, width and buffer layer of waveguide are 0.2[$\mu$m],4[$\mu$m] and 0.02[$\mu$m] respectively. By applying these parameters of single waveguide to simulate a X-switch, we have chosen index change of 0.002, width of 3[$\mu$m] and angle of 0.4$^{\circ}$~0.6$^{\circ}$of optical waveguide and under these conditions, optical beam propagates cross-side at 0.4$^{\circ}$. When applied switching voltage of 25[V], optical beam of X-switch turns cross-side to bar-side at intersection angle 0.4$^{\circ}$, index change of 0.002, waveguide width of 3[$\mu$m], electrode gap 2[$\mu$m]. By the above results, we can obtain design conditions of theoretical analysis of an X-switch optical waveguide.e.e.

• 전자공학회논문지A
• /
• 제32A권2호
• /
• pp.96-110
• /
• 1995

Traveling-wave electrodes for the high-speed Ti:LiNbO$_{3}$ modulators are designed. For a solution to the problems of 1) phase-velocity mismatching between the optical wave and the Modulating M/W, 2) M/W electrode characteristic impedance mismateching, we assume devices with 1$\mu$m thick SiO$_{2}$ buffer layer between the electrode and the Ti:LiNbO$_{3}$ substrate. The electrode analyses are performed by the FEM using the second-order triangular elements. The optimum design parameters to satisfy the phase-velocity matching and the characteristic impedance matching are sought for. By use of the analyses' results, a Mach-Zehnder optical modulator with a CPW electrode is designed as an example. the band-width estimation is also illustrated.

• 전자공학회논문지D
• /
• 제34D권8호
• /
• pp.80-86
• /
• 1997

H:LiNbO$_{3}$ optical modulator buffered by parylene layer, which has a merits in the bandwidth, power consumption and fabrication as compared with conventional SiO$_{2}$ buffered optical modulator, is proposed and analyzed. The dependences of velocity matching condition, charcteristics impedance, and driving voltage on dielectric constants, thickness of buffer layer, and electrode configurations are demonstrated with finite element calculation. And we performed the physical and chemical test of parylene buffer layer deposited on LiNbO$_{3}$ and under Au electrodes.

• 전자공학회논문지D
• /
• 제35D권7호
• /
• pp.109-116
• /
• 1998

In this work was produced and analyzed a z-cut Ti:LiNbO$_{3}$ optical waveguide which applies for various optical devices.A waveguide channel with a thickness 8 .mu.m and a length 66,000.mu.m and a mach-zehnder interferometer type waveguide were fabricated at a diffusion temperature 1050.deg. C for 6-8hours in a wet $O_{2}$ environment. The resulting Ti:LiNbO$_{3}$ optical waveguide was measured to have a Ti-strip thickness of 950.angs. and low loss. Surfaces and cross-sections of a fabricated waveguide were analysed. The mode pattern anaysis revealed that the waveguide showed a single mode at a 1550nm wavelength. The effective dimension of the waveguide was calculated by measuring a gaussian profile; Wx=10.95.mu. and Wy=9.14.mu.m. a propagation loss, of 0.50dB/cm for a TM mode and 0.45dB/cm for a TE mode, was low enough to be accepatable for optical devices.

• 한국광학회지
• /
• 제12권3호
• /
• pp.230-234
• /
• 2001

반전대칭이 없는 광굴절결정에 있어 위상접합이 만족되지 않은 상태에서 발생된 제2고조파의 세기가 외부전기장에 의존한다는 사실을 이용하여 광굴적결정의 광굴절율 변형현상에 관한 중요상수를 측정할 수 있는 방법을 개발하였다. 마커무늬의 전기장의존도에 관한 근사식을 구하였고 이를 이용하여 제2고조파의 세기변화로부터 공간전하장의 크기를 측정할 수있었다. 실험적으로 congruent $LiNbO_3$에 빛을 두가지 다른 세기로 비추어 유도되는 공간저하장의 시간의존성을 조사하였고 측정결과를 근사식과 비교분석하여 $LiNbO_3$의 광기전력상수, 암전도상수 및 광전도상수를 결정할 수 있었다.

• 전기학회논문지P
• /
• 제57권2호
• /
• pp.135-139
• /
• 2008

MFISFETs with platinum electrode on the $LiNbO_3$/aluminum nitride/Si(100) structures were successfully fabricated and the properties of the FETs have been discussed. $I_D-V_G$ characteristics of MFISFETs for linear region (that is, 0.1 V of the drain voltage) showed hysteresis loop with a counter-clockwise trace due to the ferroelectric nature of $LiNbO_3$ films. A memory window (i.e., threshold voltage shift) of the fabricated device was about 2[V] for a sweep from -4 to +4[V]. The estimated field-effect electron mobility and transconductance on a linear region were 530[$cm^2/V{\cdot}s$] and 0.16[mS/mm], respectively. The drain current of 27[${\mu}A$] on the "on" state was more than 3 orders of magnitude larger than that of 30[nA] on the "off" state at the same "read" gate voltage of l.5[V], which means the memory operation of the MFISFET.